PC367 [SHARP]
Low Input Current Type Photocoupler; 低输入电流型光电耦合器
| 型号： | PC367 |
| 厂家： | 
SHARP ELECTRIONIC COMPONENTS |
| 描述： | Low Input Current Type Photocoupler |
| 文件： | 总5页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PC367
Low Input Current Type
Photocoupler
PC367
■ Features
■ Outline Dimensions
(Unit : mm)
1. Low input current type (IF=0.5mA)
2. High resistance to noise due to high common mode rejection
voltage (CMR:MIN. 10kV/µs)
3.6±0.3
2.54±0.25
4
3
3. Mini-flat package
4. Isolation voltage (Viso:3 750Vrms)
5. Recognized by UL, file No. 64380
3 6 7
■ Applications
1. Programmable controllers
2. Facsimiles
3. Telephones
0.4±0.1
1
2
Anode mark
5.3±0.3
■ Rank Table
Epoxy resin
Model No.
PC367NT
PC367N1T
PC367N2T
Rank mark
Ic (mA)
0.5 to 2.5
0.75 to 1.5
1.0 to 2.0
Conditions
IF=0.5mA
VCE=5V
45°
A, B or no mark
A
B
Ta=25°C
+0.4
0.5
−0.2
+0.2
7.0
■ Absolute Maximum Ratings
(Ta=25°C)
−0.7
Parameter
Symbol
Rating
Unit
mA
mA
V
Internal connection diagram
Forward current
*1 Peak forward current
IF
10
200
6
IFM
Input
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Total power dissipation
Operating temperature
Storage temperature
*2 Isolation voltage
VR
1
2
4
1
Anode
mW
P
15
70
2
3
Cathode
Emitter
Collector
VCEO
VECO
IC
V
4
V
3
6
Output
50
mA
mW
mW
PC
150
170
Ptot
Topr
Tstg
Viso
Tsol
−30 to +100
−40 to +125
°C
°C
kVrms
°C
3.75
260
*3
Soldering temperature
*1 Pulse width<=100µs, Duty ratio=0.001
*2 40 to 60%RH, AC for 1 minute, f=60Hz
*3 For 10 seconds
0.2mm or more
Soldering area
Notice
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
Internet Internet address for Electronic Components Group http://www.sharp.co.jp/ecg/
PC367
■ Electro-optical Characteristics
(Ta=25°C)
Parameter
Forward voltage
Symbol
Conditions
IF=10mA
VR=4V
MIN.
−
TYP.
1.2
MAX.
1.4
10
Unit
V
VF
Reverse current
µA
pF
IR
−
−
−
−
30
−
Terminal capacitance
Collector dark current
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Collector current
Ct
250
100
−
V=0, f=1kHz
VCE=50V, IF=0
ICEO
BVCEO
BVECO
IC
nA
V
−
IC=0.1mA, IF=0
70
−
−
6
V
IE=10µA, IF=0
0.5
−
IF=0.5mA, VCE=5V
IF=10mA, IC=1mA
DC500V 40 to 60%RH
V=0, f=1MHz
2.5
mA
V
Collector-emitter saturation voltage
Isolation resistance
Floating capacitance
−
1×1011
0.6
4
−
VCE (sat)
RISO
Cf
0.2
−
5×1010
Ω
pF
µs
µs
−
−
−
1.0
18
18
tr
Rise time
Response time
VCE=2V, IC=2mA, RL=100Ω
Fall time
tf
3
Ta=25°C, RL=470Ω, VCM=1.5kV (peak),
IF=0mA, VCC=9V, Vnp=100mV
*4
−
kV/µs
−
Common mode rejection voltage
CMR
10
*4 Refer to Fig.1
Fig.1 Test Circuit for Common Mode Rejection Voltage
(dV/dt)
VCC
VCM
RL
VO
1)
Vnp
Vcp
VCM : High wave
pulse
RL=470Ω
VO
(Vcp Nearly = dV/dt×Cf×RL)
VCM
1) Vcp : Voltage which is generated by displacement current in floating
capacitance between primary and secondary side.
V
CC=9V
Fig.3 Diode Power Dissipation vs. Ambient
Temperature
Fig.2 Forward Current vs. Ambient
Temperature
15
10
10
5
0
5
0
−30
0
25
50
75
100
125
−30
0
25
50
75
100
125
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
PC367
Fig.5 Total Power Dissipation vs. Ambient
Fig.4 Collector Power Dissipation vs.
Ambient Temperature
Temperature
200
200
150
100
170
150
100
50
0
50
0
−30
0
25
50
75
100
125
−30
0
25
50
75
100
125
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Fig.6 Peak Forward Current vs. Duty Ratio
Fig.7 Forward Current vs. Forward Voltage
100
2000
1000
500
Pulse width <=100µs
Ta=25°C
10
200
100
50
Ta=25°C
Ta=100°C
Ta=0°C
Ta=75°C
Ta=50°C
1
Ta=−25°C
20
10
0.1
5
10−3
2
5
10−2
Duty ratio
2
5
10−1
2
5
1
0
0.5
1.0
1.5
2.0
Forward voltage VF (V)
Fig.9 Collector Current vs. Collector-emitter
Voltage
Fig.8 Current Transfer Ratio vs. Forward
Current
700
30
VCE=5V
Ta=25°C
IF=7mA
Ta=25°C
600
25
PC (MAX.)
IF=5mA
500
400
300
200
20
IF=3mA
15
IF=2mA
10
IF=1mA
5
100
0
IF=0.5mA
0
0.1
1
10
0
2
4
6
8
10
Forward current IF (mA)
Collector-emitter voltage VCE (V)
PC367
Fig.10 Relative Current Transfer Ratio vs.
Ambient Temperature
Fig.11 Collector - emitter Saturation Voltage
vs. Ambient Temperature
160
0.16
VCE=5V
IF=10mA
IF=0.5mA
IC=1mA
140
0.14
120
100
80
60
40
20
0
0.12
0.10
0.08
0.06
0.04
0.02
0
−30 −20 −10
0
10 20 30 40 50 60 70 80 90 100
−30 −20 −10
0
10 20 30 40 50 60 70 80 90 100
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Fig.12 Collector Dark Current vs. Ambient
Temperature
Fig.13 Response Time vs. Load Resistance
10−5
1000
VCE=50V
VCE=2V
IC=2mA
Ta=25°C
10−6
10−7
10−8
10−9
100
tf
td
10
ts
tr
1
10−10
10−11
0.1
0.1
1
10
−30 −20 −10
0
10 20 30 40 50 60 70 80 90 100
Load resistance RL (kΩ)
Ambient temperature Ta (°C)
Fig.14 Response Time vs. Load Resistance
(Saturation)
Fig.15 Test Circuit for Response Time
1000
VCC
VCC=5V
IF=16mA
Ta=25°C
tf
RL
RD
Input
Input
Output
100
10
Output
10%
90%
ts
ts
tf
td
tr
td
1
tr
0.1
1
10
Load resistance RL (kΩ)
100
PC367
Fig.16 Voltage Gain vs Frequency
Fig.17 Collector-emitter Saturation Voltage
vs. Forward Current
5
5
IC=7mA
Ta=25°C
IC=5mA
VCE=2V
IC=2mA
Ta=25°C
0
−5
4
IC=3mA
RL=10kΩ
IC=2mA
3
1kΩ
IC=1mA
−10
−15
IC=0.5mA
100Ω
2
1
0
−20
−25
0.1
1
10
Frequency f (kHz)
100
1000
0
2
4
6
8
10
Forward current IF (mA)
Fig.18 Reflow Soldering
Only one time soldering is recommended within the temperature
profile shown below.
230°C
200°C
180°C
25°C
30s
1min
2min
1.5min
1min
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