PT4110F [SHARP]

Side View and Thin Flat Type Phototransistors; 侧视图和超薄平板式光电晶体管
PT4110F
型号: PT4110F
厂家: SHARP ELECTRIONIC COMPONENTS    SHARP ELECTRIONIC COMPONENTS
描述:

Side View and Thin Flat Type Phototransistors
侧视图和超薄平板式光电晶体管

晶体 光电 晶体管 光电晶体管
文件: 总4页 (文件大小:55K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PT4110/PT4110F  
Side View and Thin Flat Type  
Phototransistors  
PT4110/PT4110F  
Features  
Outline Dimensions  
(Unit : mm)  
1. Compact and thin flat package  
2. Wide beam angle  
1.8  
2 - C0.5  
0.7  
Detector  
3.0  
Epoxy resin  
0.7  
4˚  
(Half intensity angle : ± 70˚ )  
3. Visible light cut-off type available ( PT4110F)  
center  
4˚  
MAX. 0.1  
4˚  
4˚  
Applications  
1. Optoelectronic switches  
2. Encoders  
0.15  
(1.7)  
Rugged resin  
MAX. 0.2  
2
1
0.3  
0.1  
2 - 0.45+-  
2 - 0.4+-0.3  
0.1  
1
2
1
2
Emitter  
Collector  
(2.54)  
6˚  
6˚  
Model  
PT4110  
PT4110F  
Resin type  
Pale blue transparent epoxy resin  
Black visible light cut-off epoxy resin  
6˚  
6˚  
2.8  
* Tolerance : ±0.2 mm  
* ( ) : Reference dimensions  
Absolute Maximum Ratings  
(Ta= 25˚C)  
Parameter  
Symbol  
VCEO  
VECO  
IC  
Rating  
Unit  
V
Collector-emitter voltage  
Emitter-collector voltage  
Collector current  
35  
6
V
50  
mA  
mW  
˚C  
Collector power dissipation  
Operating temperature  
Storage temperature  
PC  
75  
Topr  
- 25 to +85  
- 40 to +85  
260  
Tstg  
˚C  
*1Soldering temperature  
Tsol  
˚C  
Soldering area  
*1 For MAX. 5 seconds at the position of 1.4 mm from the resin edge  
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,  
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”  
PT4110/PT4110F  
Electro-optical Characteristics  
(Ta =25˚C)  
Parameter  
Symbol  
IC  
Conditions  
MIN.  
4.0  
TYP.  
-
MAX.  
25  
Unit  
mA  
*2 Ee = 1mW/cm2  
VCE = 5V  
PT4110  
Collector current  
PT4110F  
2.5  
-
-
-
19  
mA  
Dark current  
ICEO  
Ee = 0, VCE = 10V  
1.0  
µ A  
*2 Ee = 1mW/cm2  
IC = 2.5mA  
Collector-emitter saturation voltage  
VCE(sat)  
-
-
1.2  
V
IC = 0.1mA  
*2 Ee = 0  
IE = 0.01mA  
*2 Ee = 0  
Collector-emitter breakdown voltage  
Emitter-collector breakdown voltage  
BVCEO  
BVECO  
35  
6
-
-
-
-
V
V
PT4110  
-
-
-
-
-
800  
860  
60  
-
-
-
-
-
Peak sensitivity wavelength  
λ
-
nm  
p
PT4110F  
Rise Time  
Fall Time  
tr  
tf  
VCE = 2V, IC = 10mA  
µ s  
µ s  
˚
Response time  
RL = 100Ω  
53  
Half intensity angle  
∆θ  
-
± 70  
*2 E : Irradiance by CIE standard light source A (tungsten)  
e
Fig. 1 Collector Power Dissipation vs.  
Fig. 2 Dark Current vs. Ambient Temperature  
Ambient Temperature  
80  
10-4  
5
VCE  
= 10V  
10-5  
5
70  
60  
50  
40  
30  
20  
10-6  
5
10-7  
5
10-8  
5
10-9  
5
10-10  
5
10  
0
10-11  
5
-
-
25  
0
25  
50  
75 85 100  
25  
0
25  
50  
75  
100  
Ambient temperature Ta (˚C)  
Ambient temperature Ta (˚C)  
PT4110/PT4110F  
Fig. 3 Relative Collector Current vs.  
Fig. 4-a Collector Current vs. Irradiance  
(PT4110)  
Ambient Temperature  
175  
VCE=2V  
Ta=25˚C  
VCE = 5V  
Ee = 1mW/cm2  
5.0  
150  
125  
100  
75  
2.0  
1.0  
0.5  
50  
25  
0
25  
50  
75  
100  
10-1  
2
5
1
-
Ambient temperature Ta (˚C)  
Irradiance E e (mW/cm2)  
Fig. 4-b Collector Current vs. Irradiance  
(PT4110F)  
Fig. 5-a Collector Current vs.  
Collector-Emitter voltage (PT4110)  
10.0  
10  
Ta = 25˚C  
VCE=2V  
Ta=25˚C  
5.0  
8
6
2.0  
1.0  
P
(MAX)  
C
4
2
0.25mW/cm  
2
0.5  
0.3  
2
0.1mW/cm  
0
10-1  
0
2
5
1
5
10  
15  
20  
25  
30  
35  
Irradiance Ee (mW/cm2)  
Collector-emitter voltage VCE (V)  
Fig. 5-b Collector Current vs.  
Fig. 6 Spectral Sensitivity  
Collector-Emitter voltage (PT4110F)  
10  
100  
Ta = 25˚C  
Ta = 25˚C  
8
80  
6
60  
PT4110  
P
(MAX)  
C
PT4110F  
4
40  
2
20  
0
2
0.25mW/cm  
2
0.1mW/cm  
0
5
10  
15  
20  
25  
30  
35  
400 500 600 700 800 900 1000 1100  
0
Collector-emitter voltage VCE (V)  
Wavelength λ (nm)  
PT4110/PT4110F  
Fig. 7 Response Time vs. Load Resistance  
Test Circuit for Response Time  
1000  
V
CE = 2V  
C = 10mA  
Ta = 25˚C  
I
tr  
Output  
RL  
Input  
100  
10  
1
tf  
VCC  
90%  
10%  
Output  
td  
td  
ts  
ts  
tr  
tf  
10  
100  
1000  
5000  
Load resistance RL ()  
Fig. 8 Radiation Diagram  
(Ta = 25˚C)  
Fig. 9 PT4110 Relative Output vs. Distance  
(Detector : GL4110)  
- 20˚  
- 10˚  
0˚  
10˚  
20˚  
100  
T
a
=25˚C  
180  
- 30˚  
- 40˚  
30˚  
40˚  
160  
140  
10  
1
120  
100  
80  
60  
40  
- 50˚  
- 60˚  
50˚  
60˚  
0.1  
0.01  
- 70˚  
- 80˚  
- 90˚  
70˚  
80˚  
90˚  
20  
0
1
10  
0.1  
100  
Angular displacement θ  
Distance between emitter and detector d (mm)  
Please refer to the chapter "Precautions for Use". (Page 78 to 93)  

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