PT4610 [SHARP]
Double Ended Mold Type Phototransistors; 双端模具类型光电晶体管型号: | PT4610 |
厂家: | SHARP ELECTRIONIC COMPONENTS |
描述: | Double Ended Mold Type Phototransistors |
文件: | 总5页 (文件大小:64K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PT4600/PT4600F/PT4610/PT4610F/PT4650F
Double Ended Mold Type
Phototransistors
PT4600/PT4600F/PT4610/
PF4610F/PF4650F
■ Features
■ Outline Dimensions
(Unit : mm)
2.7MAX.
1. Compact double ended mold package
*2 Mark
0.7
2
1.8
0.8
(Packaging area : 37% smaller than PT480)
2. Narrow beam angle (Half intensity angle : ± 20˚
Light sensitivity : 3 times as large as PT460 series)
3. Darlington output type (PT4610), visible light cut-off
type (PT4600F/4610F/4650F), VCR tape end
detection type (PT4650F) available as standard
4. Taped model (2,000 pieces/reel) also available
*1 Epoxy resin
PT4600
PT4610
PT4600F
PT4650F
PT4610F
2
2
0.4
R0.8
0.5
0.25
1
■ Applications
1. Floppy disk drives
2. VCRs
1
1
1
2
Emitter
Collector
2.3
Model
PT4600
PT4600F Black visible light cut-off
PT4610 Pale blue transparent
*1 Resin type
Transparent
*2
-
-
-
3. Audio equipment
4. Video-movie kits
PT4610F Black visible light cut-off
PT4650F Black visible light cut-off
Red
Yellow
* Tolerance : ± 0.2 mm
■ Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Rating
35
Unit
V
Symbol
VCEO
Collector-emitter voltage
Emitter-collector voltage
VECO
6
V
PT4600/PT4600F/PT4650F
20
Collector
current
IC
mA
PT4610/PT4610F
50
PT4600/PT4600F/PT4650F
PT4610/PT4610F
50
Collector power
dissipation
PC
mW
100
Operating temperature
Storage temperature
*1Soldering temperature
Topr
Tstg
Tsol
- 20 to +85
- 40 to +85
260
˚C
˚C
˚C
*1 For MAX. 3 seconds at the position of 2.5 mm from the resin edge
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
PT4600/PT4600F/PT4610/PT4610F/PT4650F
■ Electro-optical Characteristics
(Ta =25˚C)
Parameter
PT4600
Symbol
IC
Conditions
MIN.
0.95
0.55
0.55
0.6
0.4
-
TYP.
MAX.
2.80
1.85
1.2
Unit
-
-
-
-
-
-
-
*2Ee = 1mW/cm2
VCE = 5V
PT4600F
Collector current
Dark current
PT4650F
PT4610
mA
*2Ee = 0.01mW/cm2
VCE = 5V
*2Ee = 0, VCE = 20V
*2Ee = 0, VCE = 10V
*2Ee = 10mW/cm2
IC = 0.5mA
3.05
2.0
PT4610F
PT4600/4600F/4650F
PT4610/PT4610F
PT4600/PT4600F
PT4650F
0.1
ICEO
µ A
-
1.0
-
-
0.2
-
0.4
1.2
Collector-emitter
saturation voltage
VCE(sat)
V
*2Ee = 1mW/cm2
PT4610/PT4610F
IC = 2.5mA
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
BVCEO
BVECO
IC = 0.1mA, *2Ee = 0
IC = 0.01mA, *2Ee = 0
35
6
-
-
-
V
V
-
-
PT4600/4610
800
860
10
-
-
Peak sensitivity wavelength
λ p
-
nm
PT4600F/4610F/4650F
-
Rise
Response time
Fall
tr
tf
VCE = 20V, IC = 1mA
-
40
PT4600/4600F/4650F
RL = 1kΩ
-
8
35
µ s
Rise
Response time
Fall
tr
V
CE = 2V, IC = 10mA
-
400
300
± 20
2 000
1 500
-
PT4610/4610F
tf
RL =100Ω
-
Half intensity angle
∆θ
-
-
˚
*2 Ee : Irradiance by CIE standard light source
Fig. 1-a Collector Power Dissipation vs. Ambient
Fig. 1-b Collector Power Dissipation vs. Ambient
temperature (PT4610/4610F)
temperature(PT4600/4600F/4650F)
80
120
100
80
60
40
20
0
70
60
50
40
30
20
10
0
-
-
25
25
0
25
50
75 85
100
0
25
50
75 85 100
125
Ambient temperature Ta (˚C)
Ambient temperature Ta (˚C)
PT4600/PT4600F/PT4610/PT4610F/PT4650F
Fig. 2-b Dark Current vs. Ambient temperature
Fig. 2-a Dark Current vs. Ambient temperature
(PT4600/4600F/4650F)
(PT4610/4610F)
10 - 6
10- 4
VCE
5
VCE = 20V
= 10V
10- 5
5
10 - 7
10- 6
5
10- 7
5
10 - 8
10- 8
5
10- 9
5
10 - 9
10 -10
5
10 -11
5
10 - 10
-
0
25
50
75
100
125
150
25
0
25
50
75
100
Ambient temperature Ta (˚C)
Ambient temperature Ta (˚C)
Fig. 3-a Relative Collector Current vs. Ambient
temperature (PT4600/4600F/4650F)
Fig. 3-b Relative Collector Current vs. Ambient
temperature
(PT4610/4610F)
160
175
150
125
100
75
VCE = 5V
VCE = 10V
Ev= 2 lx
Ee = 1mW/cm2
140
120
100
80
60
40
20
0
50
-
0
25
50
75
100
125
150
25
0
25
50
75
100
Ambient temperature Ta (˚C)
Ambient temperature Ta (˚C)
Fig. 4-a Collector Current vs. Irradiance
Fig. 4-b Collector Current vs. Irradiance
(PT4610/4610F)
(PT4600/4600F/4650F)
30
25
20
15
10
5
VCE = 5V
Ta = 25˚C
V
CE = 5V
Ta = 25˚C
100
PT4610
PT4610F
10
1.0
0.1
PT4600
PT4600F/4650F
0
0
2.5
5.0
7.5
10
12.5
15.0
0.01
0.1
1
10
100
Irradiance Ee (mA/cm2)
Irradiance Ee (mW/cm2)
PT4600/PT4600F/PT4610/PT4610F/PT4650F
Fig. 7-a Response Time vs. Load Resistance
(PT4600/4600F/4650F)
Test Circuit for Response Time
VCE = 20V
I
C = 1mA
100
50
(PT4600/4600F/4650F)
Ta = 25˚C
tr
Output
RL
Input
20
10
5
tf
90%
10%
Vcc
Output
2
1
tr
tf
1
2
5
10
20
50
100
Load resistance RL (kΩ)
Fig. 7-b Response Time vs. Load Resistance
(PT4610/4610F)
Test Circuit for Response Time
1000
V
CE = 2V
500
IC = 10mA
Ta = 25˚C
(PT4610/4610F)
200
100
50
tr
tf
Output
RL
Input
td
20
10
5
90%
10%
Vcc
ts
Output
td
2
1
ts
5
10 20
50 100 200 500 1000
5000
tr
tf
Load resistance RL (Ω )
Fig. 8 Radiation Diagram
Fig. 9-a Collector-emitter Saturation Voltage
vs. Irradiance
(PT4600)
- 20
- 10
0
10
20
1.4
1.2
100
T = 25˚C
a
- 30
- 40
30
40
80
60
40
20
1
0.8
0.6
0.4
Ic =
Ic =
Ic =
Ic =
0.25mA 0.5mA 1.0mA 2.0mA
- 50
- 60
50
60
- 70
- 80
- 90
70
80
0.2
0
90
50
0.1
0.2
0.5
1
2
5
10
50
0
Angular displacement θ
Irradiance E e (mW/cm2)
PT4600/PT4600F/PT4610/PT4610F/PT4650F
Fig. 9-c Collector-emitter Saturation Voltage
Fig. 9-b Collector-emitter Saturation Voltage
vs. Irradiance(PT4600F/PT4650F)
vs. Irradiance
(PT4610)
1.4
2.2
2
Ta =25˚C
Ta = 25˚C
1.2
1
1.8
1.6
1.4
1.2
1.
Ic =
Ic =
Ic =
Ic =
0.25mA 0.5mA 1.0mA 2.0mA
0.8
0.6
0.4
0.2
0
Ic=
Ic= Ic= Ic=
Ic=
10mA
1mA 2mA 3mA 5mA
08
0.6
0.4
0.2
0
0.1
0.2
0.5
1
2
5
10
0.01 0.02
0.05
0.1
0.2
0.5
1
Irradiance E e (mW/cm2)
Irradiance Ee (mW/cm2)
Fig. 9-d Collector-emitter Saturation Voltage
vs. Irradiance
(PT4610F)
2.2
2
Ta = 25˚C
1.8
1.6
1.4
1.2
1.
Ic = Ic = Ic = Ic =
1mA 2mA 3mA 5mA
Ic =
10mA
08
0.6
0.4
0.2
0
0.01 0.02
0.05
0.1
0.2
0.5
1
Irradiance E e (mW/cm2)
● Please refer to the chapter "Precautions for Use". (Page 78 to 93)
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