AOK42S60 [FREESCALE]
600V 39A a MOS TM Power Transistor; 600V 39A的MOS TM功率晶体管型号: | AOK42S60 |
厂家: | Freescale |
描述: | 600V 39A a MOS TM Power Transistor |
文件: | 总6页 (文件大小:490K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AOK42S60
600V 39A
α
MOS TM Power Transistor
General Description
The AOK42S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver
applications.
high levels of performance and robustness in switching
By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this device can be
adopted quickly into new and existing offline power supply
designs.
Features
VDS @ Tj,max
IDM
700V
166A
0.099Ω
40nC
9.2µJ
RDS(ON),max
Qg,typ
Eoss @ 400V
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOK42S60
Units
Drain-Source Voltage
Gate-Source Voltage
VDS
600
±30
39
V
V
VGS
TC=25°C
Continuous Drain
Current
ID
TC=100°C
25
A
Pulsed Drain Current C
Avalanche Current C
IDM
IAR
166
11
A
mJ
Repetitive avalanche energy C
Single pulsed avalanche energy G
TC=25°C
EAR
EAS
234
1345
417
mJ
W
W/ oC
PD
Power Dissipation B
Derate above 25oC
3.3
100
20
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
dv/dt
V/ns
°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
Thermal Characteristics
TL
300
°C
Parameter
Symbol
AOK42S60
Units
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
RθJA
40
°C/W
RθCS
RθJC
0.5
0.3
°C/W
°C/W
Maximum Junction-to-Case
1/6
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AOK42S60
600V 39A
α
MOS TM Power Transistor
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
-
STATIC PARAMETERS
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
VDS=600V, VGS=0V
600
-
700
-
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
650
-
1
V
-
IDSS
µA
VDS=480V, TJ=150°C
-
10
-
-
IGSS
VDS=0V, VGS=±30V
Gate-Body leakage current
Gate Threshold Voltage
-
±100
3.8
nΑ
V
VGS(th)
VDS=5V,ID=250µA
2.5
3.2
VGS=10V, ID=21A, TJ=25°C
-
-
-
-
-
0.085 0.099
Ω
Ω
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=21A, TJ=150°C
0.24
0.28
-
IS=21A,VGS=0V, TJ=25°C
VSD
IS
Diode Forward Voltage
0.84
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
-
-
39
A
ISM
166
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
-
-
2154
135
-
-
pF
pF
VGS=0V, VDS=100V, f=1MHz
Coss
Effective output capacitance, energy
related H
Co(er)
Co(tr)
-
-
103
344
-
-
pF
pF
VGS=0V, VDS=0 to 480V, f=1MHz
Effective output capacitance, time
related I
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Crss
Rg
Reverse Transfer Capacitance
Gate resistance
-
-
2.7
1.7
-
-
pF
Ω
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
-
-
-
-
-
-
-
-
-
-
40
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=480V, ID=21A
11.7
11.9
38.5
53
VGS=10V, VDS=400V, ID=21A,
RG=25Ω
tD(off)
tf
136
46
trr
IF=21A,dI/dt=100A/µs,VDS=400V
IF=21A,dI/dt=100A/µs,VDS=400V
IF=21A,dI/dt=100A/µs,VDS=400V
473
38.5
10.5
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
ns
A
Irm
Qrr
µC
Body Diode Reverse Recovery Charge
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. L=60mH, IAS=6.7A, VDD=150V, Starting TJ=25°C
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Wavesoldering only allowed at leads.
2/6
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AOK42S60
600V 39A
α
MOS TM Power Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
10V
10V
7V
6V
7V
6V
5.5V
5V
5.5V
5V
VGS=4.5V
VGS=4.5V
0
5
10
DS (Volts)
15
20
0
5
10
15
20
V
VDS (Volts)
Figure 2: On-Region Characteristics@125°C
Figure 1: On-Region Characteristics@25°C
1000
100
10
0.30
0.25
0.20
0.15
0.10
0.05
0.00
-55°C
VDS=20V
125°C
VGS=10V
1
25°C
0.1
0.01
0
15
30
45
60
75
90
2
3
4
5
6
7
8
9
10
ID (A)
VGS(Volts)
Figure 4: On-Resistance vs. Drain Current and
Gate Voltage
Figure 3: Transfer Characteristics
1.2
1.1
1
3
2.5
2
VGS=10V
ID=21A
1.5
1
0.9
0.8
0.5
0
-100
-50
0
50
100
150
200
-100
-50
0
50
Temperature (°C)
Figure 5: On-Resistance vs. Junction Temperature
100
150
200
TJ (oC)
Figure 6: Break Down vs. Junction Temperature
3/6
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AOK42S60
600V 39A
α
MOS TM Power Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
15
12
9
125°C
VDS=480V
ID=21A
25°C
6
3
0
0.0
0.2
0.4
0.6
0.8
1.0
0
15
30
45
60
VSD (Volts)
Q
g (nC)
Figure 7: Body-Diode Characteristics (Note E)
Figure 8: Gate-Charge Characteristics
10000
1000
100
20
16
12
8
Ciss
Eoss
Coss
Crss
10
4
0
1
0
0
100
200
VDS (Volts)
Figure 10: Coss stroed Energy
300
400
500
600
100
200
300
400
500
600
VDS (Volts)
Figure 9: Capacitance Characteristics
1000
100
10µs
RDS(ON)
100µs
limited
10
1
1ms
10ms
1s
DC
0.1
0.01
TJ(Max)=150°C
TC=25°C
0.1
1
10
100
1000
VDS (Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOK42S60(Note F)
4/6
www.freescale.net.cn
AOK42S60
600V 39A
α
MOS TM Power Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
1200
900
600
300
0
40
35
30
25
20
15
10
5
0
25
50
75
TCASE (°C)
100
125
150
175
0
25
50
75
TCASE (°C)
100
125
150
Figure 12: Avalanche energy
Figure 13: Current De-rating (Note B)
10
1
Indescendingorder
D=0.5,0.3,0.1,0.05,0.02,0.01,singlepulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.3°C/W
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
PulseWidth(s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOK42S60(NoteF)
5/6
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AOK42S60
600V 39A
α
MOS TM Power Transistor
Gate Charge Test Circuit &Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit& Waveforms
L
2
EAR=1/2LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTest Circuit &Waveforms
Qrr =- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
6/6
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