SQ2308BES [FREESCALE]
Automotive N-Channel 60 V (D-S) 175 °C MOSFET; 汽车N沟道60 V （D -S ）， 175 ℃的MOSFET
| 型号： | SQ2308BES |
| 厂家： | 
Freescale |
| 描述： | Automotive N-Channel 60 V (D-S) 175 °C MOSFET |
| 文件： | 总10页 (文件大小：797K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SQ2308BES
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
60
FEATURES
RDS(on) () at VGS = 10 V
0.170
0.220
2.3
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedc
RDS(on) () at VGS = 4.5 V
ID (A)
Configuration
Single
• 100 % Rg and UIS Tested
D
TO-236
(SOT-23)
• Compliant to RoHS Directive 2002/95/EC
G
S
1
2
3
D
G
Top View
S
SQ2308BES (8U)*
* Marking Code
N-Channel MOSFET
ORDERING INFORMATION
Package
SOT-23
SQ2308BES-T1-GE3
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
60
V
VGS
20
TC = 25 °C
2.3
Continuous Drain Current
ID
T
C = 125 °C
1.3
Continuous Source Current (Diode Conduction)
Pulsed Drain Currenta
IS
2.5
A
IDM
IAS
EAS
9
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
6
L = 0.1 mH
TC = 25 °C
1.8
mJ
W
2
0.6
Maximum Power Dissipationa
PD
T
C = 125 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
LIMIT
175
75
UNIT
Junction-to-Ambient
PCB Mountb
°C/W
Junction-to-Foot (Drain)
RthJF
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
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SQ2308BES
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS(th)
IGSS
VGS = 0, ID = 250 μA
60
1.5
-
-
-
V
VDS = VGS, ID = 250 μA
2.0
2.5
VDS = 0 V, VGS
=
20 V
-
100
1
nA
μA
A
VGS = 0 V
VGS = 0 V
GS = 0 V
VDS = 60 V
VDS = 60 V, TJ = 125 °C
VDS = 60 V, TJ = 175 °C
VDS5 V
-
-
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
-
-
50
V
-
-
150
-
ID(on)
VGS = 10 V
VGS = 10 V
6
-
-
ID = 2 A
0.139
0.170
0.300
0.495
0.220
-
V
GS = 10 V
VGS = 10 V
GS = 4.5 V
ID = 2 A, TJ = 125 °C
ID = 2 A, TJ = 175 °C
ID = 1.5 A
-
-
Drain-Source On-State Resistancea
RDS(on)
-
-
0.165
4
V
-
Forward Transconductanceb
Dynamicb
gfs
VDS = 15 V, ID = 2 A
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
-
-
191
23
240
30
15
6.8
-
VGS = 0 V
VDS = 25 V, f = 1 MHz
pF
-
12
-
4.5
0.7
0.9
3.05
6
Qgs
Qgd
Rg
VGS = 10 V
VDS = 30 V, ID = 2 A
f = 1 MHz
-
nC
-
-
1.5
-
5
td(on)
tr
td(off)
tf
9
-
13
20
20
12
VDD = 30 V, RL = 15
ID 2 A, VGEN = 10 V, Rg = 1
ns
-
13
-
8
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
-
-
-
9
A
V
Forward Voltage
VSD
IF = 2 A, VGS = 0
0.85
1.2
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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SQ2308BES
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
12.0
9.6
7.2
4.8
2.4
0.0
10
8
VGS = 10 V thru 5 V
VGS = 4 V
6
TC = 25 °C
4
VGS = 3 V
2
TC= 125 °C
TC = - 55 °C
0
0
2
4
6
8
10
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
6
5
4
3
2
1
0
0.5
0.4
0.3
0.2
0.1
0.0
TC = - 55 °C
TC = 25 °C
TC = 125 °C
VGS = 4.5 V
VGS = 10 V
0.0
0.4
0.8
1.2
1.6
2.0
0
2
4
6
8
10
ID - Drain Current (A)
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
300
240
180
120
60
10
8
ID = 2 A
Ciss
6
VDS = 30 V
4
2
Coss
Crss
0
0
0
12
24
36
48
60
0
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
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SQ2308BES
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.5
2.1
1.7
1.3
0.9
0.5
100
10
ID = 2 A
VGS = 10 V
TJ = 150 °C
1
VGS = 4.5 V
0.1
TJ = 25 °C
0.01
0.001
- 50 - 25
0
25
50
75 100 125 150 175
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
0.5
0.2
0.5
0.4
0.3
0.2
0.1
0.0
- 0.1
- 0.4
- 0.7
- 1.0
TJ = 150 °C
ID = 5 mA
ID = 250 μA
TJ = 25 °C
- 50 - 25
0
25
50
75 100 125 150 175
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
80
ID = 1 mA
76
72
68
64
60
- 50 - 25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
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SQ2308BES
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
IDM Limited
10
1
Limited by RDS(on)
*
100 μs
1 ms
0.1
0.01
10 ms
100 ms
1 s, 10 s, DC
BVDSS Limited
TC = 25 °C
Single Pulse
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 175 °C/W
thJA
(t)
3. T - T = P
Z
JM DM thJA
A
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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SQ2308BES
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
-3
-2
-1
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
•
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
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SQ2308BES
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
SOT-23 (TO-236): 3-LEAD
b
3
E
1
E
1
2
e
S
e
1
D
0.10 mm
0.004"
C
C
0.25 mm
q
A
2
A
Gauge Plane
Seating Plane
Seating Plane
C
A
1
L
1
L
MILLIMETERS
INCHES
Dim
Min
0.89
0.01
Max
1.12
0.10
Min
0.035
0.0004
Max
0.044
0.004
A
A1
A2
0.88
0.35
0.085
2.80
2.10
1.20
1.02
0.50
0.18
3.04
2.64
1.40
0.0346
0.014
0.003
0.110
0.083
0.047
0.040
0.020
0.007
0.120
0.104
0.055
b
c
D
E
E1
e
0.95 BSC
1.90 BSC
0.0374 Ref
e1
0.0748 Ref
L
0.40
0.60
8°
0.016
0.024
8°
L1
0.64 Ref
0.50 Ref
0.025 Ref
0.020 Ref
S
q
3°
3°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
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SQ2308BES
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
Mounting LITTLE FOOTR SOT-23 Power MOSFETs
Wharton McDaniel
Surface-mounted LITTLE FOOT power MOSFETs use integrated
circuit and small-signal packages which have been been modified
to provide the heat transfer capabilities required by power devices.
Leadframe materials and design, molding compounds, and die
attach materials have been changed, while the footprint of the
packages remains the same.
ambient air. This pattern uses all the available area underneath the
body for this purpose.
0.114
2.9
0.081
2.05
See Application Note 826, Recommended Minimum Pad
0.150
3.8
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, (
), for the basis
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of the pad design for a LITTLE FOOT SOT-23 power MOSFET
footprint . In converting this footprint to the pad set for a power
device, designers must make two connections: an electrical
connection and a thermal connection, to draw heat away from the
package.
0.059
1.5
0.0394
1.0
0.037
0.95
FIGURE 1. Footprint With Copper Spreading
The electrical connections for the SOT-23 are very simple. Pin 1 is
the gate, pin 2 is the source, and pin 3 is the drain. As in the other
LITTLE FOOT packages, the drain pin serves the additional
function of providing the thermal connection from the package to
the PC board. The total cross section of a copper trace connected
to the drain may be adequate to carry the current required for the
application, but it may be inadequate thermally. Also, heat spreads
in a circular fashion from the heat source. In this case the drain pin
is the heat source when looking at heat spread on the PC board.
Since surface-mounted packages are small, and reflow soldering
is the most common way in which these are affixed to the PC
board, “thermal” connections from the planar copper to the pads
have not been used. Even if additional planar copper area is used,
there should be no problems in the soldering process. The actual
solder connections are defined by the solder mask openings. By
combining the basic footprint with the copper plane on the drain
pins, the solder mask generation occurs automatically.
Figure 1 shows the footprint with copper spreading for the SOT-23
package. This pattern shows the starting point for utilizing the
board area available for the heat spreading copper. To create this
pattern, a plane of copper overlies the drain pin and provides
planar copper to draw heat from the drain lead and start the
process of spreading the heat so it can be dissipated into the
A final item to keep in mind is the width of the power traces. The
absolute minimum power trace width must be determined by the
amount of current it has to carry. For thermal reasons, this
minimum width should be at least 0.020 inches. The use of wide
traces connected to the drain plane provides a low-impedance
path for heat to move away from the device.
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SQ2308BES
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
RECOMMENDED MINIMUM PADS FOR SOT-23
0.037
0.022
(0.950)
(0.559)
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
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SQ2308BES
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vi shay disclaims (i) any and all
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freestyle Intertechnology, Inc. hereby certi fies that all its products that are id entified as RoHS-Compliant fulfill the
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10 / 10
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