SQ2318AES [VISHAY]
Automotive P-Channel 40 V (D-S) MOSFET;
| 型号： | SQ2318AES |
| 厂家： | 
VISHAY |
| 描述： | Automotive P-Channel 40 V (D-S) MOSFET |
| 文件： | 总11页 (文件大小：279K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SQ2319ADS
Vishay Siliconix
www.vishay.com
Automotive P-Channel 40 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® power MOSFET
• AEC-Q101 qualified c
• 100 % Rg and UIS tested
-40
0.075
0.145
-4.6
R
DS(on) (Ω) at VGS = -10 V
DS(on) (Ω) at VGS = -4.5 V
R
• Material categorization:
ID (A)
for definitions of compliance please see
www.vishay.com/doc?99912
Configuration
Package
Single
SOT-23
S
SOT-23 (TO-236)
D
3
G
2
S
D
1
G
P-Channel MOSFET
Top View
Marking Code: 9F
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
-40
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
20
T
C = 25 °C
-4.6
-2
Continuous Drain Current
ID
T
C = 125 °C
Continuous Source Current (Diode Conduction)
Pulsed Drain Current a
IS
-2.2
-18
A
IDM
IAS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
-13
L = 0.1 mH
EAS
8.4
mJ
W
TC = 25 °C
2.5
Maximum Power Dissipation a
PD
TC = 125 °C
0.5
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to +150
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
LIMIT
166
50
UNIT
Junction-to-Ambient
PCB Mount b
°C/W
Junction-to-Foot (Drain)
RthJF
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. When mounted on 1" square PCB (FR4 material).
S15-2366-Rev. A, 12-Oct-15
Document Number: 76397
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2319ADS
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS(th)
IGSS
VGS = 0, ID = -250 μA
-40
-
-
V
VDS = VGS, ID = -250 μA
-1.5
-2.0
-2.5
VDS = 0 V, VGS
=
20 V
-
-
-
100
nA
μA
A
VGS = 0 V VDS = -40 V
-
-1
Zero Gate Voltage Drain Current
On-State Drain Current a
IDSS
V
GS = 0 V
GS = 0 V
VDS = -40 V, TJ = 125 °C
VDS = -40 V, TJ = 150 °C
VDS ≤ -5 V
-
-
-50
V
-
-
-150
ID(on)
VGS = -10 V
-10
-
-
-
V
V
V
GS = -10 V
GS = -10 V
GS = -10 V
ID = -3 A
0.068
0.105
0.115
0.105
8
0.075
ID = -3 A, TJ = 125 °C
ID = -3 A, TJ = 150 °C
ID = -2.4 A
-
-
Drain-Source On-State Resistance a
RDS(on)
Ω
-
-
0.145
-
V
GS = -4.5 V
-
Forward Transconductance b
Dynamic b
gfs
VDS = -5 V, ID = -3 A
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge c
Gate-Source Charge c
Gate-Drain Charge c
Gate Resistance
Turn-On Delay Time c
Rise Time c
Turn-Off Delay Time c
Fall Time c
Ciss
Coss
Crss
Qg
-
-
464
90
620
120
70
16
-
V
GS = 0 V
VDS = -20 V, f = 1 MHz
pF
-
53
-
10.5
1.4
2.7
4.3
4
Qgs
Qgd
Rg
VGS = -10 V
VDS = -20 V, ID = -3 A
f = 1 MHz
-
nC
-
-
2.1
-
6.4
8
Ω
td(on)
tr
td(off)
tf
-
18
28
27
27
V
DD = -20 V, RL = 6.7 Ω
ns
ID ≅ -3 A, VGEN = -10 V, Rg = 1 Ω
-
17
-
17
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a
ISM
-
-
-
-18
A
V
Forward Voltage
VSD
IF = -1.5 A, VGS = 0
-0.8
-1.2
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-2366-Rev. A, 12-Oct-15
Document Number: 76397
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2319ADS
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
20
16
12
8
5
4
3
2
1
0
VGS = 10 V thru 5 V
VGS = 4 V
TC = 25 °C
4
VGS = 3 V
VGS = 2 V
TC = 125 °C
TC = -55 °C
0
0
2
4
6
8
10
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
20
16
12
8
10
8
TC = -55 °C
TC = 25 °C
6
TC = 125 °C
TC = 25 °C
4
4
2
TC = 125 °C
TC = -55 °C
0
0
0
2
4
6
8
10
0
1
2
3
4
5
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Transconductance
0.25
0.20
0.15
0.10
0.05
0.00
800
600
400
200
Ciss
VGS = 4.5 V
VGS =10 V
Coss
Crss
0
0
4
8
12
16
20
0
10
20
30
40
V DS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
S15-2366-Rev. A, 12-Oct-15
Capacitance
Document Number: 76397
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2319ADS
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10
8
2.0
1.7
1.4
1.1
0.8
0.5
ID = 3 A
ID = 3 A
VDS = 20 V
VGS = 10 V
6
4
VGS = 4.5 V
2
0
0
3
6
9
12
-50
-25
0
25
50
75
100 125 150
TJ - Junction Temperature (°C)
Q g - Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
0.50
0.40
0.30
0.20
0.10
0.00
100
TJ = 150 °C
10
1
TJ = 25 °C
0.1
TJ = 150 °C
0.01
0.001
TJ = 25 °C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
-40
1.0
0.7
-43
-46
-49
-52
-55
ID = 1 mA
ID = 250 μA
0.4
ID = 5 mA
0.1
-0.2
-0.5
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
TJ - Temperature (°C)
TJ - Junction Temperature (°C)
Threshold Voltage
S15-2366-Rev. A, 12-Oct-15
Drain Source Breakdown vs. Junction Temperature
Document Number: 76397
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2319ADS
Vishay Siliconix
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
IDM limited
(1)
Limited by RDS(on)
10
1 ms
10 ms
100 ms, 1 s, 10 s
1
0.1
BVDSS limited
DC
TC = 25 °C
Single pulse
0.01
0.01
0.1
1
10
100
V DS - Drain-to-Source Voltage (V)
(1)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
0.02
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 166 °C/W
thJA
(t)
3. T - T = P
JM DM thJA
Z
A
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S15-2366-Rev. A, 12-Oct-15
Document Number: 76397
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2319ADS
Vishay Siliconix
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
10
1
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
•
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76397.
S15-2366-Rev. A, 12-Oct-15
Document Number: 76397
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Work-In-Progress
Ordering Information
www.vishay.com
Vishay Siliconix
SOT-23
Ordering codes for the SQ rugged series power MOSFETs in the SOT-23 package:
DATASHEET PART NUMBER
SQ2301ES
OLD ORDERING CODE a
SQ2301ES-T1-GE3
SQ2303ES-T1-GE3
SQ2308CES-T1-GE3
SQ2309ES-T1-GE3
SQ2310ES-T1-GE3
SQ2315ES-T1-GE3
SQ2318AES-T1-GE3
-
NEW ORDERING CODE
SQ2301ES-T1_GE3
SQ2303ES-T1_GE3
SQ2308CES-T1_GE3
SQ2309ES-T1_GE3
SQ2310ES-T1_GE3
SQ2315ES-T1_GE3
SQ2318AES-T1_GE3
SQ2319ADS-T1_GE3
SQ2325ES-T1_GE3
SQ2337ES-T1_GE3
SQ2348ES-T1_GE3
SQ2351ES-T1_GE3
SQ2361AEES-T1_GE3
SQ2361ES-T1_GE3
SQ2362ES-T1_GE3
SQ2389ES-T1_GE3
SQ2398ES-T1_GE3
SQ2303ES
SQ2308CES
SQ2309ES
SQ2310ES
SQ2315ES
SQ2318AES
SQ2319ADS
SQ2325ES
SQ2325ES-T1-GE3
SQ2337ES-T1-GE3
SQ2348ES-T1-GE3
SQ2351ES-T1-GE3
SQ2361AEES-T1-GE3
-
SQ2337ES
SQ2348ES
SQ2351ES
SQ2361AEES
SQ2361ES
SQ2362ES
-
SQ2389ES
-
SQ2398ES
-
Note
a. Old ordering code is obsolete and no longer valid for new orders
Revision: 06-Jun-16
Document Number: 65844
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOT-23 (TO-236): 3-LEAD
b
3
E
1
E
1
2
e
S
e
1
D
0.10 mm
0.004"
C
C
0.25 mm
q
A
2
A
Gauge Plane
Seating Plane
Seating Plane
C
A
1
L
L
1
MILLIMETERS
INCHES
Dim
Min
0.89
0.01
Max
1.12
0.10
Min
0.035
0.0004
Max
0.044
0.004
A
A1
A2
0.88
0.35
0.085
2.80
2.10
1.20
1.02
0.50
0.18
3.04
2.64
1.40
0.0346
0.014
0.003
0.110
0.083
0.047
0.040
0.020
0.007
0.120
0.104
0.055
b
c
D
E
E1
e
0.95 BSC
1.90 BSC
0.0374 Ref
e1
0.0748 Ref
L
0.40
0.60
8°
0.016
0.024
8°
L1
0.64 Ref
0.50 Ref
0.025 Ref
0.020 Ref
S
q
3°
3°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
Document Number: 71196
09-Jul-01
www.vishay.com
1
AN807
Vishay Siliconix
Mounting LITTLE FOOTR SOT-23 Power MOSFETs
Wharton McDaniel
Surface-mounted LITTLE FOOT power MOSFETs use integrated
circuit and small-signal packages which have been been modified
to provide the heat transfer capabilities required by power devices.
Leadframe materials and design, molding compounds, and die
attach materials have been changed, while the footprint of the
packages remains the same.
ambient air. This pattern uses all the available area underneath the
body for this purpose.
0.114
2.9
0.081
2.05
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, (http://www.vishay.com/doc?72286), for the basis
of the pad design for a LITTLE FOOT SOT-23 power MOSFET
footprint . In converting this footprint to the pad set for a power
device, designers must make two connections: an electrical
connection and a thermal connection, to draw heat away from the
package.
0.150
3.8
0.059
1.5
0.0394
1.0
0.037
0.95
FIGURE 1. Footprint With Copper Spreading
The electrical connections for the SOT-23 are very simple. Pin 1 is
the gate, pin 2 is the source, and pin 3 is the drain. As in the other
LITTLE FOOT packages, the drain pin serves the additional
function of providing the thermal connection from the package to
the PC board. The total cross section of a copper trace connected
to the drain may be adequate to carry the current required for the
application, but it may be inadequate thermally. Also, heat spreads
in a circular fashion from the heat source. In this case the drain pin
is the heat source when looking at heat spread on the PC board.
Since surface-mounted packages are small, and reflow soldering
is the most common way in which these are affixed to the PC
board, “thermal” connections from the planar copper to the pads
have not been used. Even if additional planar copper area is used,
there should be no problems in the soldering process. The actual
solder connections are defined by the solder mask openings. By
combining the basic footprint with the copper plane on the drain
pins, the solder mask generation occurs automatically.
Figure 1 shows the footprint with copper spreading for the SOT-23
package. This pattern shows the starting point for utilizing the
board area available for the heat spreading copper. To create this
pattern, a plane of copper overlies the drain pin and provides
planar copper to draw heat from the drain lead and start the
process of spreading the heat so it can be dissipated into the
A final item to keep in mind is the width of the power traces. The
absolute minimum power trace width must be determined by the
amount of current it has to carry. For thermal reasons, this
minimum width should be at least 0.020 inches. The use of wide
traces connected to the drain plane provides a low-impedance
path for heat to move away from the device.
Document Number: 70739
26-Nov-03
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SOT-23
0.037
0.022
(0.950)
(0.559)
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 72609
Revision: 21-Jan-08
www.vishay.com
25
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Revision: 13-Jun-16
Document Number: 91000
1
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