2SC4226D [SHIKUES]
NPN SILICON RF TRANSISTOR;
| 型号： | 2SC4226D |
| 厂家： | 
SHIKUES Electronics |
| 描述： | NPN SILICON RF TRANSISTOR |
| 文件： | 总3页 (文件大小：591K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC4226
NPN SILICON RF TRANSISTOR
External bipolar process, with high power gain
Low noise characteristics. The adoption of submit-
niature SOT- 323 package, Especially suitable for
high density surface patch installation, mainly for
the VHF, UHF low noise amplifier.
SOT-323：1：Base
2：Emitter 3：Collector
Feature
High gain:︱S21e︱2 TYP. Value is 11dB
@ VCE=3V，IC=7mA，f=1GHz
@ VCE=3V，IC=7mA，f=1GHz
@ VCE=3V，IC=7mA，f=1GHz
Low noise: NF
fT (TYP.) :
TYP. Value is 1.4dB
TYP. Value is 4.5GHz
Absolute Maximum Ratings TA=25℃ Unless Otherwise noted
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector current
SYMBLE
VCBO
VCEO
VEBO
IC
MAXIMUM VALUE
UNIT
V
20
12
V
3
100
V
mA
mW
℃
Collector Power Dissipation
Junction Temperature
PD
150
Tj
150
Storage Temperature
Tstg
-65 ~ +150 ℃
Tstg
hFE Classification
A
B
C
D
E
Classification
Marking
R24
R25
60~100
90~140
130~180
170~250
250~300
hFE
REV.08
1 of 3
2SC4226
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
PARAMETER
Collector-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
SYMBLE MIN. TYP. MAX.
UNIT
V
TEST CONDITION
IC=1.0μA
VCBO
ICBO
IEBO
hFE
20
0.1
0.1
μA
VCB=10V
μA
VEB=1V
60
150
4.5
300
VCE=3V,IC=7mA
Transit frequency
f
T
3.5
GHz
pF
VCE=3V,IC=7mA
Output feedback capacitance
Power gain
Cre
0.65
9.5
1.0
VCB=10V,IE=0mA,f=1MHz
VCE=3V,IC=3mA,f=1GHz
VCE=3V,IC=5mA,f=1GHz
VCE=3V,IC=7mA,f=1GHz
VCE=3V,IC=10mA,f=1GHz
VCE=3V,IC=7mA,f=1GHz
VCE=10V,Ic=5mA,f=1GHz
| S21e |2
dB
dB
dB
dB
dB
10.7
11
11.6
1.4
Noise factor
NF
2.0
2.3
1.6
TYPICAL CHARACTERISTICS
REV.08
2 of 3
2SC4226
REV.08
3 of 3
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