SD6251 [SHOUDING]

5V, 2.5A 550KHz High Efficiency Low Ripple Synchronous Step-Up Converter;
SD6251
型号: SD6251
厂家: SHOUDING Shouding Semiconductor    SHOUDING Shouding Semiconductor
描述:

5V, 2.5A 550KHz High Efficiency Low Ripple Synchronous Step-Up Converter

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SD6251  
2.5A 55  
5V,  
0KHz High Efficiency Low Ripple  
Synchronous Step-Up Converter  
Description  
Features  
The SD6251 is a high efficiency, fixed frequency  
550KHz, current mode PWM boost DC/DC converter  
which could operate battery such as input voltage  
down to 2.5V. The converter output voltage can be  
adjusted to a maximum of 5.25V by an external  
resistor divider. Besides the converter includes a  
0.08Ω N-channel MOSFET switch and 0.12Ω  
P-channel synchronous rectifier. So no external  
Schottky diode is required and could get better  
efficiency near 93%.  
High Efficiency up to 93%  
Low RDS(ON) Integrated Power MOSFET  
NMOS 80mΩ / PMOS120mΩ  
Wide Input Voltage Range: 2.5V to 5.5V  
Fixed 550KHz Switching Frequency  
Low-Power Mode for Light Load Conditions  
±2.0% Voltage Reference Accuracy  
PMOS Current Limit for Short Circuit Protection  
Low Quiescent Current  
Output Ripple under 200mV. (Scope Full  
Bandwidth)  
Fast Transient Response  
The converter is based on a fixed frequency, current  
mode, pulse-width-modulation PWM controller that  
goes automatically into PSM mode at light load.  
Built-In Soft Start Function  
Over-Temperature Protection with Auto Recovery  
Output Overvoltage Protection  
Space-Saving SOT-23-6 Package  
When converter operation into discontinuous mode,  
the internal anti-ringing switch will reduce  
interference and radiated electromagnetic energy.  
Applications  
The SD6251 is available in a space-saving SOT-23-6  
package for portable application.  
Portable Power Bank  
Wireless Equipment  
Handheld Instrument  
GPS Receiver  
Pin Assignments  
Ordering Information  
SD6251□□ □  
Package (SOT-23-6)  
R: Tape/Reel  
VIN  
OUT EN  
G: Green  
6
5
4
3
(Marking)  
1
2
Package Type  
D6: SOT-23-6 and marking  
LX GND FB  
Figure 1. Pin Assignment of SD6251  
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SD6251  
Typical Application Circuit  
L1  
VIN  
VOUT  
5V/1A  
10μH  
2.5V to 5.5V  
C1  
10μF  
C2  
0.1μF  
R1  
525K  
C4, C6  
0.1μF  
C3, C5  
22μF  
6
2
4
1
5
3
VIN  
LX  
OUT  
FB  
SD6251  
GND  
R2  
100K  
EN  
ON  
OFF  
Figure 2. Typical Application Circuit  
Functional Pin Description  
Pin Name  
Pin No.  
Pin Function  
EN  
4
2
1
6
5
3
Logic Controlled Shutdown Input.  
Ground Pin.  
GND  
LX  
Power Switching Connection. Connect LX to the inductor and output rectifier.  
Power Supply Input Pin.  
VIN  
OUT  
FB  
Output of the Synchronous Rectifier.  
Voltage Feedback Input Pin.  
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SD6251  
Block Diagram  
VIN  
LX  
PMOS  
OUT  
ANTI-RING  
On/Off  
Control  
EN  
NMOS  
Body-Diode  
Switch  
Anti-Reverse  
Comparator  
Isense/Current Limit  
Slope Comp.  
PFM  
Control  
PWM  
Control  
Logic  
OSC  
OVP  
COMP  
FB  
Error  
Amp  
Bandgap  
Reference  
UVLO  
VIN  
OTP  
GND  
Figure 3. Block Diagram of SD6251  
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SD6251  
Absolute Maximum Ratings (Note 1)  
Supply Voltage VIN --------------------------------------------------------------------------------------------- -0.3V to +6.5V  
LX Voltage VLX -------------------------------------------------------------------------------------------------- -0.3V to +6.5V  
All Other Pins Voltage ----------------------------------------------------------------------------------------- -0.3V to +6.5V  
Maximum Junction Temperature (TJ) --------------------------------------------------------------------- +150°C  
Storage Temperature (TS) ----------------------------------------------------------------------------------- -65°C to +150°C  
Lead Temperature (Soldering, 10sec.) ------------------------------------------------------------------- +260°C  
● Package Thermal Resistance (θJA)  
SOT-23-6 ---------------------------------------------------------------------------------------------- +250°C/W  
● Package Thermal Resistance (θJC)  
SOT-23-6 ---------------------------------------------------------------------------------------------- +130°C/W  
Note 1Stresses beyond this listed under “Absolute Maximum Ratings" may cause permanent damage to the device.  
Recommended Operating Conditions  
Supply Voltage VIN --------------------------------------------------------------------------------------------- +2.5V to +5.5V  
Output Voltage Range ---------------------------------------------------------------------------------------- up to +5.25V  
Operation Temperature Range ------------------------------------------------------------------------------ -40°C to +85°C  
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SD6251  
Electrical Characteristics  
(VIN=3.3V, TA=25°C, unless otherwise specified.)  
Parameter  
VIN Input Supply Voltage  
Input UVLO Threshold  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
V
VIN  
2.5  
5.5  
VIN Rising  
1.85  
0.2  
V
Under Voltage Lockout Threshold  
Hysteresis  
VIN Falling  
V
VIN=3.3V, VFB=0.8V  
Measure VIN  
VIN Supply Current (Switching)  
300  
500  
μA  
VIN Supply Current (No switching)  
Feedback Voltage  
VFB=1V  
25  
μA  
V
2.5VVIN5.5V  
VFB  
0.784  
0.8  
120  
80  
0.816  
High-Side PMOSFET RDS(ON)  
Low-Side NMOSFET RDS(ON)  
mΩ  
mΩ  
High-Side MOSFET Leakage  
Current  
ILX(leak)  
VLX=5.5V, VOUT=0V  
VLX=5.5V  
10  
μA  
Low-Side MOSFET Leakage Current  
Oscillation Frequency  
Switch Current Limit  
10  
μA  
KHz  
A
FOSC  
450  
2.5  
550  
650  
VIN=3.3V  
Short Circuit Trip Point  
Short Circuit Current Limit  
Maximum Duty Cycle  
Line Regulation  
Monitored FB voltage  
VIN = 3.3V  
0.3  
50  
90  
V
mA  
%
DMAX  
VIN=3.3V  
85  
VIN=2.5V to 5.5V, IOUT=100mA  
IOUT=0A to 1A  
1
%
Load Regulation  
0.5  
6
%
OVP Threshold Voltage on OUT Pin  
OVP Threshold Hysteresis  
Internal Soft-Start Time  
EN Input Low Voltage  
EN Input High Voltage  
EN Input Current  
V
500  
1
mV  
ms  
V
3
VEN (L)  
VEN (H)  
IEN  
0.4  
1.4  
V
VIN=3.3V  
2
μA  
Thermal Shutdown Threshold  
(Note 2)  
TSD  
150  
30  
°C  
°C  
Thermal Shutdown Hysteresis  
Note 2Not production tested.  
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SD6251  
Application Information  
Controller Circuit  
Device Enable  
The device is based on a current-mode control  
The device will be shut down when EN is set to  
GND. In this mode, the regulator stops switching,  
all internal control circuitry including the low-battery  
comparator will be switched off, and the load will be  
disconnected from the input (as described in above  
synchronous rectifier section). This also means  
that the output voltage may drop below the input  
voltage during shutdown.  
topology and uses  
a
constant frequency  
pulse-width modulator to regulate the output  
voltage. The controller limits the current through  
the power switch on a pulse by pulse basis. The  
current sensing circuit is integrated in the device;  
therefore, no additional components are required.  
Due to the nature of the boost converter topology  
used here, the peak switch current is the same as  
the peak inductor current, which will be limited by  
the integrated current limiting circuits under normal  
operating conditions.  
The device is put into operation when EN is set  
high. During start-up of the converter, the duty  
cycle is limited in order to avoid high peak currents  
drawn from the battery. The limit is set internally  
by the current limit circuit.  
Synchronous Rectifier  
Anti-Ringing Switch  
The device integrates an N-channel and a P-  
channel MOSFET transistor to realize  
synchronous rectifier. There is no additional  
Schottky diode required. Because the device  
uses a integrated low RDS(ON) PMOS switch for  
rectification, the power conversion efficiency  
reaches 93%.  
a
The device integrates a circuit which removes  
the ringing that typically appears on the SW node  
when the converter enters the discontinuous  
current mode. In this case, the current through  
the inductor ramps to zero and the integrated  
PMOS switch turns off to prevent a reverse  
current from the output capacitors back to the  
battery. Due to remaining energy that is stored  
in parasitic components of the semiconductors  
and the inductor, a ringing on the SW pin is  
A special circuit is applied to disconnect the load  
from the input during shutdown of the converter.  
In conventional synchronous rectifier circuits, the  
backgate diode of the high-side PMOS is forward  
biased in shutdown and allows current flowing from  
the battery to the output. This device, however,  
uses a special circuit to disconnect the backgate  
diode of the high-side PMOS and so, disconnects  
the output circuitry from the source when the  
regulator is not enabled (EN=low).  
induced.  
The integrated anti-ringing switch  
clamps this voltage internally to VIN; therefore,  
dampens this ringing.  
Adjustable Output Voltage  
The accuracy of the output voltage is determined by  
the accuracy of the internal voltage reference, the  
controller topology, and the accuracy of the external  
resistor. The reference voltage has an accuracy of  
PSM Mode  
The SD6251 is designed for high efficiency over  
wide output current range. Even at light load, the  
efficiency stays high because the switching losses  
of the converter are minimized by effectively  
reducing the switching frequency. The controller  
will enter a power saving mode if certain conditions  
are met. In this mode, the controller only switches  
on the transistor if the output voltage trips below a  
set threshold voltage. It ramps up the output  
voltage with one or several pulses, and goes again  
into PSM mode once the output voltage exceeds a  
set threshold voltage.  
± 2%.  
The controller switches between fixed  
frequency and PSM mode, depending on load  
current. The tolerance of the resistors in the  
feedback divider determines the total system  
accuracy.  
Design Procedure  
The SD6251 boost converter family is intended for  
systems that are powered by a single-cell Ion  
battery with a typical terminal voltage between 3V  
to 4.2V.  
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SD6251  
Application Information (Continued)  
(3) Capacitor Selection  
(1) Programming the Output Voltage  
The major parameter necessary to define the  
output capacitor is the maximum allowed output  
voltage ripple of the converter. This ripple is  
determined by two parameters of the capacitor,  
the capacitance and the ESR. It is possible to  
calculate the minimum capacitance needed for  
the defined ripple, supposing that the ESR is zero,  
by using Equation 3.  
The output voltage of the SD6251 can be  
adjusted with an external resistor divider. The  
typical value of the voltage on the FB pin is  
800mV in fixed frequency operation.  
The  
maximum allowed value for the output voltage is  
5.5V. The current through the resistive divider  
should be about 100 times greater than the  
current into the FB pin. The typical current into  
the FB pin is 0.01µA, and the voltage across R2  
is typically 800mV. Based on those two values,  
the recommended value for R2 is in the range of  
800kΩ in order to set the divider current at 1µA.  
From that, the value of resistor R1, depending  
on the needed output voltage (VO), can be  
calculated using Equation 1.  
-  
OꢃT ꢆN  
MꢆNꢆ  
..(3)  
OꢃT  
ꢈꢁꢇꢂꢁꢂ  
OꢃT  
Parameter f is the switching frequency and V is  
the maximum allowed ripple.  
The total ripple is larger due to the ESR of the  
output capacitor. This additional component of  
the ripple can be calculated using Equation 4.  
OꢃT  
OꢃT  
 
     
-1 ꢀ800kΩꢁ 800mꢂ -1 …..(1)  
R1ꢀR2ꢁ  
Fꢄ  
ꢇꢂESRꢀꢆOꢃTꢁRESR ..(4)  
(2) Inductor Selection  
The total ripple is the sum of the ripple caused by  
the capacitance and the ripple caused by the ESR  
of the capacitor. It is possible to improve the  
design by enlarging the capacitor or using smaller  
capacitors in parallel to reduce the ESR or by using  
better capacitors with lower ESR, like ceramics.  
Tradeoffs must be made between performance and  
costs of the converter circuit.  
A boost converter normally requires two main  
passive components for storing energy during  
the conversion. A boost inductor is required  
and a storage capacitor at the output. To select  
the boost inductor, it is recommended to keep  
the possible peak inductor current below the  
current limit threshold of the power switch in the  
chosen configuration.  
A 10µF input capacitor is recommended to  
The second parameter for choosing the inductor  
is the desired current ripple in the inductor.  
Normally, it is advisable to work with a ripple of  
less than 20% of the average inductor current.  
A smaller ripple reduces the magnetic hysteresis  
losses in the inductor, as well as output voltage  
ripple and EMI. But in the same way, regulation  
time at load changes rises. In addition, a larger  
inductor increases the total system cost. With  
those parameters, it is possible to calculate the  
value for the inductor by using Equation 2.  
improve transient behavior of the regulator.  
ceramic or tantalum capacitor with a 100nF in  
parallel placed close to the IC is recommended.  
A
-  
OꢃT ꢆN  
ꢂ  
..(2)  
ꢆN  
ꢇꢆ ꢁꢈꢁꢂ  
OꢃT  
Parameter ꢈ is the switching ꢈrequency and ΔꢆL is  
the ripple current in the inductor, i.e, 20% x IL.  
With this calculated value and currents, it is  
possible to choose a suitable inductor. Care must  
be taken that load transients and losses in the  
circuit can lead to higher currents. Also, the  
losses in the inductor caused by magnetic  
hysteresis losses and copper losses are a major  
parameter for total circuit efficiency.  
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SD6251  
Application Information (Continued)  
Layout Considerations  
As for all switching power supplies, the layout is an  
important step in the design, especially at high peak  
currents and high switching frequencies. If the  
layout is not carefully done, the regulator could  
show stability problems as well as EMI problems.  
Therefore, use wide and short traces for the main  
current path as indicated in bold in Figure 4. The  
input capacitor, output capacitor and the inductor  
should be placed as close to the IC as possible.  
Use a common ground node as shown in Figure 4  
to minimize the effects of ground noise. The  
feedback divider should be placed as close to the IC  
as possible.  
VOUT  
VIN  
C3 C5  
C1  
6
1
5
GND  
2
4
GND  
L1  
3
LX  
R2  
R1  
Figure 4. Layout Diagram  
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SD6251  
Outline Information  
SOT-23-6 Package (Unit: mm)  
DIMENSION IN MILLIMETER  
SYMBOLS  
UNIT  
MIN  
0.90  
0.00  
0.90  
0.30  
2.80  
MAX  
1.45  
0.15  
1.30  
0.50  
3.00  
A
A1  
A2  
B
D
E
2.60  
1.50  
0.90  
1.80  
0.30  
3.00  
1.70  
1.00  
2.00  
0.60  
E1  
e
e1  
L
NoteFollowed From JEDEC MO-178-C.  
Carrier Dimensions  
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