B5819WS [SHUNYE]
SCHOTTKY BARRIER DIODE; 肖特基二极管型号: | B5819WS |
厂家: | Shunye Enterprise |
描述: | SCHOTTKY BARRIER DIODE |
文件: | 总2页 (文件大小:956K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
B5817WS-B5819WS
SCHOTTKY BARRIER DIODE
FEATURES
SOD-323
1.35(0.053)
1.15(0.045)
1.26(.050)
1.24(.048)
For use in low voltage, high frequency inverters
Free wheeling, and polanty protection applications
2.70(0.106)
2.30(0.091)
2.70(0.106)
1.80(0.071)
1.60(0.063)
1.80(0.071)
1.60(0.063)
2.30(0.091)
MECHANICAL DATA
Case: Molded plastic body
.305(0.012)
.295(0.010)
0.4(0.016)
.25(0.010)
Terminals: Plated leads solderable per MIL-STD-750,
.177(.007)
.089(.003)
Method 2026
0.1(0.004)
MIN
1.00(.040)
0.80(.031)
.72(0.028)
Polarity: Polarity symbols marked on case
.69(0.027)
Marking: B5817W:SJ, B5818W:SK, B5819W:SL
.08(.003)
MIN
Dimensions in millimeters and (inches)
Maximum ratings and electrical characteristics, Single diode @TA=25C
SYMBOLS
UNITS
PARAMETER
Peak repetitive peak reverse voltage
Working peak
DC Blocking voltage
RMS Reverse voltage
Average rectified output current
Peak forward surge current @=8.3ms
Repetitive peak forward current
Power dissipation
Thermal resistance junction to ambient
Storage temperature
B5817WS
B5818WS
B5819WS
VRRM
VRWM
VR
V
20
14
30
40
28
V
R(RMS)
V
A
21
IO
1
25
A
IFSM
IFRM
625
mA
mW
K/W
200
Pd
RΘJA
TSTG
VRM
625
-65 to +150
30
C
V
Non-Repetitive peak reverse voltage
20
40
Electrical ratings @TA=25C
SYMBOLS
Min.
20
Max.
Unit
V
Test conditions
PARAMETER
Reverse breakdown voltage
B5817WS
IR=1mA
V
B5818WS
B5819WS
V(BR)
30
V
40
VR=20V
VR=30V
VR=40V
B5817WS
B5818WS
B5819WS
Reverse voltage leakage current
Forward voltage
1
IR
mA
0.45
0.75
0.55
0.875
0.6
B5817WS
B5818WS
B5819WS
V
V
IF=1A
IF=3A
VF
V
0.9
120
CD
pF
V
R=4V,f=1.0MHz
Diode capacitance
www.shunyegroup.com
RATINGS AND CHARACTERISTIC CURVES B5817WS-B5819WS
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
1.25
1.0
0.75
0.5
0.25
0
30
25
20
15
10
Resistive or inductive
load0.375''(9.5mm)
lead length
5
0
0
20
40
60
80
100
120
140
0
10
100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE(C)
FIG. 3- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
100
10
50
10
TJ=125
C
TJ=25
C
TJ=125
C
1.0
1.0
0.1
TJ=75 C
0.1
Pulse width=300us
1% duty cycle
0.01
TJ=25
C
0.001
0.01
0
0.4
0.8
1.2
1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE(V)
PERCENT OF RATED PEAK PEVERSE VOLTAGE (%)
FIG. 5- TYPICAL JUNCTION CAPACITANCE
FIG. 6-TYPICAL TRANSIENT
THERMAL IMPEDANCE
400
100
TJ=25
C
f=1.0MHz
Vsp=50mVp-p
10
100
1
10
0
0.1
1
10
100
0
1
10
100
REVERSE VOLTAGE (V)
t--PULSE DURATION (sec.)
www.shunyegroup.com
相关型号:
B5819WS-TP
Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC
B582-2
Silicon Controlled Rectifier, 50000mA I(T), 600V V(RRM), 2 Element, ROHS COMPLIANT PACKAGE-5
CRYDOM
©2020 ICPDF网 联系我们和版权申明