B5819WS [SHUNYE]

SCHOTTKY BARRIER DIODE; 肖特基二极管
B5819WS
型号: B5819WS
厂家: Shunye Enterprise    Shunye Enterprise
描述:

SCHOTTKY BARRIER DIODE
肖特基二极管

肖特基二极管
文件: 总2页 (文件大小:956K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
B5817WS-B5819WS  
SCHOTTKY BARRIER DIODE  
FEATURES  
SOD-323  
1.35(0.053)  
1.15(0.045)  
1.26(.050)  
1.24(.048)  
For use in low voltage, high frequency inverters  
Free wheeling, and polanty protection applications  
2.70(0.106)  
2.30(0.091)  
2.70(0.106)  
1.80(0.071)  
1.60(0.063)  
1.80(0.071)  
1.60(0.063)  
2.30(0.091)  
MECHANICAL DATA  
Case: Molded plastic body  
.305(0.012)  
.295(0.010)  
0.4(0.016)  
.25(0.010)  
Terminals: Plated leads solderable per MIL-STD-750,  
.177(.007)  
.089(.003)  
Method 2026  
0.1(0.004)  
MIN  
1.00(.040)  
0.80(.031)  
.72(0.028)  
Polarity: Polarity symbols marked on case  
.69(0.027)  
Marking: B5817W:SJ, B5818W:SK, B5819W:SL  
.08(.003)  
MIN  
Dimensions in millimeters and (inches)  
Maximum ratings and electrical characteristics, Single diode @TA=25C  
SYMBOLS  
UNITS  
PARAMETER  
Peak repetitive peak reverse voltage  
Working peak  
DC Blocking voltage  
RMS Reverse voltage  
Average rectified output current  
Peak forward surge current @=8.3ms  
Repetitive peak forward current  
Power dissipation  
Thermal resistance junction to ambient  
Storage temperature  
B5817WS  
B5818WS  
B5819WS  
VRRM  
VRWM  
VR  
V
20  
14  
30  
40  
28  
V
R(RMS)  
V
A
21  
IO  
1
25  
A
IFSM  
IFRM  
625  
mA  
mW  
K/W  
200  
Pd  
RΘJA  
TSTG  
VRM  
625  
-65 to +150  
30  
C
V
Non-Repetitive peak reverse voltage  
20  
40  
Electrical ratings @TA=25C  
SYMBOLS  
Min.  
20  
Max.  
Unit  
V
Test conditions  
PARAMETER  
Reverse breakdown voltage  
B5817WS  
IR=1mA  
V
B5818WS  
B5819WS  
V(BR)  
30  
V
40  
VR=20V  
VR=30V  
VR=40V  
B5817WS  
B5818WS  
B5819WS  
Reverse voltage leakage current  
Forward voltage  
1
IR  
mA  
0.45  
0.75  
0.55  
0.875  
0.6  
B5817WS  
B5818WS  
B5819WS  
V
V
IF=1A  
IF=3A  
VF  
V
0.9  
120  
CD  
pF  
V
R=4V,f=1.0MHz  
Diode capacitance  
www.shunyegroup.com  
RATINGS AND CHARACTERISTIC CURVES B5817WS-B5819WS  
FIG. 1- FORWARD CURRENT DERATING CURVE  
FIG. 2-MAXIMUM NON-REPETITIVE PEAK  
FORWARD SURGE CURRENT  
1.25  
1.0  
0.75  
0.5  
0.25  
0
30  
25  
20  
15  
10  
Resistive or inductive  
load0.375''(9.5mm)  
lead length  
5
0
0
20  
40  
60  
80  
100  
120  
140  
0
10  
100  
NUMBER OF CYCLES AT 60Hz  
CASE TEMPERATURE(C)  
FIG. 3- TYPICAL INSTANTANEOUS  
FORWARD CHARACTERISTICS  
FIG. 4- TYPICAL REVERSE CHARACTERISTICS  
100  
10  
50  
10  
TJ=125  
C
TJ=25  
C
TJ=125  
C
1.0  
1.0  
0.1  
TJ=75 C  
0.1  
Pulse width=300us  
1% duty cycle  
0.01  
TJ=25  
C
0.001  
0.01  
0
0.4  
0.8  
1.2  
1.6  
0
20  
40  
60  
80  
100  
INSTANTANEOUS FORWARD VOLTAGE(V)  
PERCENT OF RATED PEAK PEVERSE VOLTAGE (%)  
FIG. 5- TYPICAL JUNCTION CAPACITANCE  
FIG. 6-TYPICAL TRANSIENT  
THERMAL IMPEDANCE  
400  
100  
TJ=25  
C
f=1.0MHz  
Vsp=50mVp-p  
10  
100  
1
10  
0
0.1  
1
10  
100  
0
1
10  
100  
REVERSE VOLTAGE (V)  
t--PULSE DURATION (sec.)  
www.shunyegroup.com  

相关型号:

B5819WS-SOD-323

SCHOTTKY BARRIER DIODE
JCST

B5819WS-T

Rectifier Diode,
MCC

B5819WS-TP

Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC

B5819WSF2

Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon,
YANGJIE

B581SE-2T

Silicon Controlled Rectifier, 27000mA I(T), 400V V(RRM), 2 Element,
CRYDOM

B581SE-2T

Silicon Controlled Rectifier, 400V V(RRM),
CYNERGY3

B582-2

Silicon Controlled Rectifier, 50000mA I(T), 600V V(RRM), 2 Element, ROHS COMPLIANT PACKAGE-5
CRYDOM

B582-2T

THYRISTOR MODULE
ETC

B582SE-2

Silicon Controlled Rectifier, 600V V(RRM),
CYNERGY3

B582SE-2T

Silicon Controlled Rectifier, 27000mA I(T), 600V V(RRM), 2 Element,
CRYDOM

B582SE-2T

Silicon Controlled Rectifier, 600V V(RRM),
CYNERGY3

B583-2

Silicon Controlled Rectifier, 800V V(RRM), 2 Element, MODULE-5
CYNERGY3