DF01DB102 [SHUNYE]

SILICON BRIDGE RECTIFIERS; 硅桥式整流器


型号：	DF01DB102
厂家：	Shunye Enterprise
描述：	SILICON BRIDGE RECTIFIERS 硅桥式整流器
文件：	总2页 (文件大小：253K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DF005 THRU DF10 AND DB101 THRU DB107

SILICON BRIDGE RECTIFIERS

Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere

FEATURES

DB-1

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

Ideal for printed circuit boards

Low reverse leakage

High forward surge current capability

High temperature soldering guaranteed:

260 C/10 seconds,5 lbs. (2.3kg) tension

0.255(6.5)

0.245(6.2)

0.350(8.9)

0.300(7.6)

0.365(9.3)

0.355(9.0)

0.135(3.4)

0.115(2.9)

MECHANICAL DATA

0.165(4.2)

0.155(3.9)

0.020

(0.5)

Case: Molded plastic body

Terminals: Plated leads solderable per MIL-STD-750,

Method 2026

0.060

(1.5)

0.205(5.2)

0.195(5.0)

Polarity: Polarity symbols marked on case

Mounting Position: Any

Dimensions in inches and (millimeters)

Weight:0.04 ounce, 1.0 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load, for current capacitive load derate by 20%.

DF005 DF01 DF02 DF04 DF06 DF08 DF10

DB101 DB102 DB103 DB104 DB105 DB106 DB107

SYMBOLS

UNITS

Maximum repetitive peak reverse voltage

Maximum RMS voltage

VRRM

VRMS

VDC

VOLTS

100

200

140

200

400

280

400

600

420

600

800 1000

560 700

800 1000

Maximum DC blocking voltage

100

Maximum average forward output rectified current

0.06”(1.5mm) lead lenth at TA=40 C (Note 2)

Peak forward surge current

I(AV)

Amps

1.0

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Amps

IFSM

50.0

A²s

I²t

Rating for Fusing(t<8.3ms)

Maximum instantaneous forward voltage drop

per birdge element at 1.0A

Volts

1.1

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

0.5

TA=100 C

C/W

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance (Note 2)

Operating junction temperature range

storage temperature range

RqJA

-65 to +150

TSTG

NOTES:

1.Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.

2.Unit mounted on P.C. board with 0.51” x 0.51”(13x13mm) copper pads.

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RATINGS AND CHARACTERISTIC CURVES DF005 THRU DF10 AND DB101 THRU DB107

FIG. 1- FORWARD CURRENT DERATING CURVE

FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD

SURGE CURRENT

1.0

0.8

0.6

0.4

0.2

Single Phase

Half Wave 60Hz

Resistive or

inductive Load

8.3ms SINGLE HALF SINE-WAVE

(JEDEC Method)

100

125

150

175

100

AMBIENT TEMPERATURE,

NUMBER OF CYCLES AT 60 Hz

FIG. 3-TYPICAL INSTANTANEOUS FORWARD

CHARACTERISTICS

FIG. 4-TYPICAL REVERSE CHARACTERISTICS

1,000

100

0.1

TJ=100 C

TJ=25 C

PULSE WIDTH=300 ms

1%DUTY CYCLE

TJ=25 C

0.1

0.01

0.6

0.8

1.0

1.2

1.4

1.5

100

INSTANTANEOUS FORWARD VOLEAGE,

VOLTS

PERCENT OF PEAK REVERSE VOLTAGE,%

FIG. 5-TYPICAL JUNCTION CAPACITANCE

FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE

200

100

TJ=25 C

0.1

0.01

0.1

100

0.1

1.0

100

REVERSE VOLTAGE,VOLTS

t,PULSE DURATION,sec.

www.shunyegroup.com

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