SD101AWS [SHUNYE]

SCHOTTKY DIODES; 肖特基二极管


型号：	SD101AWS
厂家：	Shunye Enterprise
描述：	SCHOTTKY DIODES 肖特基二极管肖特基二极管光电二极管
文件：	总2页 (文件大小：867K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SD101AWS-SD101CWS

SCHOTTKY DIODES

FEATURES

SOD-323

1.35(0.053)

1.15(0.045)

1.26(.050)

1.24(.048)

Low forward voltage drop

Guard ring construction for transient protection

Negligible reverse recovery time

2.70(0.106)

2.30(0.091)

2.70(0.106)

1.80(0.071)

1.60(0.063)

1.80(0.071)

1.60(0.063)

2.30(0.091)

MECHANICAL DATA

.305(0.012)

.295(0.010)

0.4(0.016)

.25(0.010)

Case: Molded plastic body

Terminals: Plated leads solderable per MIL-STD-750,

Method 2026

Polarity: Polarity symbols marked on case

Marking: SD101AWS:S1, SD101BWS:S2, SD101CWS:S3

.177(.007)

.089(.003)

0.1(0.004)

MIN

1.00(.040)

0.80(.031)

.72(0.028)

.69(0.027)

.08(.003)

MIN

Dimensions in millimeters and (inches)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Maximum ratings and electrical characteristics, Single diode @T^A=25 C

SYMBOLS

UNITS

PARAMETER

Peak repetitive peak reverse voltage

Working peak reverse voltage

DC Blocking voltage

SD101AWS

SD101BWS

SD101CWS

V^RRM

VRMS

V^DC

VOLTS

RMS Reverse voltage

V^R(RMS)

I^FM

Forward continuous current

Repetitive peak forward current @t<1.0s

@t=10us

I^FRM

2. 0

Power dissipation

Thermal resistance junction to ambient

Storage temperature

200

C/W

R^ΘJA

T^STG

300

-65 to +125

Electrical ratings @T^A=25

PARAMETER

SYMBOLS

Min.

Typ.

Max.

Unit

Conditions

Reverse breakdown voltage

SD101AWS

SD101BWS

SD101CWS

SD101AWS

SD101BWS

SD101CWS

SD101AWS

SD101BWS

SD101CWS

SD101AWS

SD101BWS

SD101CWS

SD101AWS

SD101BWS

SD101CWS

I^R=10uA

I^F=1.0mA

I^F=15mA

V^R=50V

V^R=40V

V^R=30V

V^(BR)R

Fowrard voltage

0.41

0.40

0.39

1.00

0.95

0.90

V^F

Reverse current

I^RM

0.2

Capacitance between terminals

Reverse recovery time

2.0

2.1

2.2

1.0

C^T

t^rr

VR=0V,f=1.0MHz

IF=IR=5mA

Irr=0.1XIR,RL=100

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RATINGS AND CHARACTERISTIC CURVES SD101AWS-SD101CWS

FIG. 1- POWER DERATING CURVE

FIG. 2-TYPICAL FORWARD CHARACTERISTIC

500

400

See Note1

1.0

300

200

100

0.1

0.01

100

125

150

0.2

0.4

0.6

0.8

1.0

T^A,AMBIENT TEMPERATURE( C)

V^RREVERSE VOLTAGE.(V)

FIG.3- TYPICAL TOTAL CAPACITANCE

VS REVERSE VOLTAGE

FIG. 4- TYPICAL REVERSE CHARACTERISTICS

T^A=125 C

T^j=25

f=1MHz

T^A=75 C

0.1

T^A=25 C

0.01

T^A=0 C

0.001

T^A=-65 C

0.0001

V^RREVERSE VOLTAGE.(V)

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