Q62702-C1689 [SIEMENS]
PNP Silicon AF Transistors (For general AF applications High collector current High current gain); PNP硅晶体管自动对焦(一般自动对焦的应用高集电极电流高电流增益)型号: | Q62702-C1689 |
厂家: | Siemens Semiconductor Group |
描述: | PNP Silicon AF Transistors (For general AF applications High collector current High current gain) |
文件: | 总5页 (文件大小:135K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PNP Silicon AF Transistors
BC 807
BC 808
● For general AF applications
● High collector current
● High current gain
● Low collector-emitter saturation voltage
● Complementary types: BC 817, BC 818 (NPN)
Package1)
SOT-23
Type
Marking
Ordering Code
Pin Configuration
1
2
3
BC 807-16
BC 807-25
BC 807-40
BC 808-16
BC 808-25
BC 808-40
5As
5Bs
5Cs
5Es
5Fs
5Gs
Q62702-C1735
Q62702-C1689
Q62702-C1721
Q62702-C1736
Q62702-C1504
Q62702-C1692
B
E
C
1)
For detailed information see chapter Package Outlines.
5.91
Semiconductor Group
1
BC 807
BC 808
Maximum Ratings
Parameter
Symbol
Values
BC 808
Unit
BC 807
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
V
V
CE0
CB0
EB0
45
50
5
25
30
5
V
I
I
I
I
C
500
mA
A
Peak collector current
Base current
CM
1
100
B
mA
Peak base current
BM
200
Total power dissipation, T
C
= 79 ˚C Ptot
330
mW
˚C
Junction temperature
T
T
j
150
Storage temperature range
stg
– 65 … + 150
Thermal Resistance
Junction - ambient1)
R
th JA
th JS
≤ 285
≤ 215
K/W
Junction - soldering point
R
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
1)
Semiconductor Group
2
BC 807
BC 808
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA
V(BR)CE0
V(BR)CB0
V(BR)EB0
V
BC 807
BC 808
45
25
–
–
–
–
Collector-base breakdown voltage
= 100 µA
IC
BC 807
BC 808
50
30
–
–
–
–
Emitter-base breakdown voltage, I
E
= 10 µA
5
–
–
Collector cutoff current
ICB0
V
CB = 25 V
–
–
–
–
100
50
nA
µA
V
CB = 25 V, T
A
= 150 ˚C
Emitter cutoff current, VEB = 4 V
I
EB0
–
–
100
nA
–
DC current gain1)
h
FE
IC
= 100 mA; VCE = 1 V
100
160
250
160
250
350
250
400
630
BC 807-16, BC 808-16
BC 807-25, BC 808-25
BC 807-40, BC 808-40
IC
= 300 mA; VCE = 1 V
60
100
170
–
–
–
–
–
–
BC 807-16, BC 808-16
BC 807-25, BC 808-25
BC 807-40, BC 808-40
Collector-emitter saturation voltage1)
= 500 mA; I = 50 mA
V
CEsat
BEsat
–
–
0.7
V
IC
B
Base-emitter saturation voltage1)
= 500 mA; I = 50 mA
V
–
–
2
IC
B
AC characteristics
Transition frequency
f
T
–
–
–
200
10
–
–
–
MHz
pF
I
C
= 50 mA, VCE = 5 V, f = 20 MHz
Output capacitance
CB = 10 V, f = 1 MHz
Input capacitance
C
obo
ibo
V
C
60
VEB = 0.5 V, f = 1 MHz
1)
Pulse test: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
3
BC 807
BC 808
Total power dissipation Ptot = f (T
A
*; TS
)
Transition frequency f
T
= f (I )
C
* Package mounted on epoxy
VCE = 5 V
Permissible pulse load Ptot max/Ptot DC = f (t
p
)
Collector cutoff current ICB0 = f (T )
A
V
CB0 = 25 V
Semiconductor Group
4
BC 807
BC 808
Base-emitter saturation voltage
Collector-emitter saturation voltage
IC
= f (VBEsat
)
IC
= f (VCEsat)
hFE = 10
hFE = 10
DC current gain hFE = f (I )
C
V
CE = 1 V
Semiconductor Group
5
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