SE1010W [SIGE]

LightChargerTM 622 Mb/s Transimpedance Amplifier Final; LightChargerTM 622 Mb / s的互阻放大器决赛


型号：	SE1010W
厂家：	SIGE SEMICONDUCTOR, INC.
描述：	LightChargerTM 622 Mb/s Transimpedance Amplifier Final LightChargerTM 622 Mb / s的互阻放大器决赛放大器
文件：	总9页 (文件大小：117K)
中文：	中文翻译
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SE1010W

LightCharger^TM622 Mb/s Transimpedance Amplifier

Final

Applications

Product Description

SONET/SDH-based transmission systems, test

equipment and modules

SiGe Semiconductor offers a portfolio of optical

networking ICs for use in high-performance optical

transmitter and receiver functions, from 155 Mb/s up

to 12.5 Gb/s.

OC-12 fibre optic modules and line termination

ATM optical receivers

SiGe Semiconductor’s SE1010W is a fully integrated,

silicon bipolar transimpedance amplifier; providing

wideband, low noise preamplification of signal current

Features

Single +5 V power supply

Input noise current = 45 nA rms when used with a

0.5 pF detector

from a photodetector. It features single-ended or

differential outputs, selectable by wire bond options,

and incorporates an automatic gain control

mechanism to increase dynamic range, allowing input

signals up to 2.6 mA peak. For differential outputs, a

decoupling capacitor on the supply is the only

external circuitry required.

Transimpedance gain = 5.6 kW into a 50 W load

(single-ended)

On-chip automatic gain control gives input

current overload of 2.6 mA pk and max output

voltage swing of 300 mV pk-pk

50 W single-ended or 100 W differential wire bond

selectable outputs

Noise performance is optimized for 622 Mb/s

operation, with

a calculated rms noise based

sensitivity of –35 dBm for 10^-10bit error rate, achieved

using a detector with 0.5 pF capacitance and a

responsivity of 0.9 A/W, with an infinite extinction ratio

source.

Bandwidth (-3 dB) = 400 MHz (min)

Wide data rate range = 10 Mb/s to 622 Mb/s

High input bias level = 2 V

Minimal external components, supply decoupling

only

Operating junction temperature range = -40°C to

+95°C

Equivalent to Nortel Networks AB53

Ordering Information

Type

Package

Bare Die

Remark

SE1010W

Shipped in

Waffle Pack

Functional Block Diagram

Automatic Gain Control

SE1010

TzAmp

622 Mb/s

Integrator

Rectifier

OUTP

OUTN

TZ_IN

Output

Driver

Tz Amp

Input

Current

50 W

Power

Supply

Rejection

Bandgap

Reference

GND or –ve supply

ACGND

Wire bond option for single-ended operation

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LightCharger^TM622 Mb/s Transimpedance Amplifier

Final

Bondpad Diagram

VCC2

VCC1

Top

View

OUTP

OUTN

TZ_IN

VEE2 ACGND VEE1

VEE1

Bondpad Description

Pad No.

Name

VCC2

VCC1

TZ_IN

VEE2

Description

Positive supply (+5.0 V), front end circuitry only.

Positive supply (+5.0 V), pads 2 & 10 are connected on chip. Only one pad needs to

be bonded.

Input pad (connect to photodetector cathode).

Negative supply (0V) – Note this is separate ground for the input stage, which is AC

coupled on chip. There is no DC current through this pad.

Bond option: Connected to external capacitor to ground for single-ended operation

(recommended 1 nF); unconnected for differential operation.

Negative supply (0V), pads 6 & 7 are connected on chip. Only one pad needs to be

bonded.

Negative supply (0V), pads 6 & 7are connected on chip. Only one pad needs to be

bonded.

ACGND

VEE1

OUTN

OUTP

Negative differential voltage output; leave unconnected for single-ended operation.

Positive differential or single-ended voltage output.

Positive supply (+5.0 V), pads 2 & 10 are connected on chip. Only one pad needs to

be bonded.

VCC1

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LightCharger^TM622 Mb/s Transimpedance Amplifier

Final

to ground (recommend 1 nF).

Under these

Functional Description

Amplifier Front-End

circumstances, OUTP operates as a single-ended

50 W output. In both cases, increasing optical input

level gives a positive-going output signal on the

OUTP pin.

The transimpedance front-end amplifies an input

current from a photodetector, at pin TZ_IN, to produce

an output voltage with the feedback resistor Rf

determining the level of amplification (see the

functional block diagram on page 1). An automatic

gain control loop varies this resistor, to ensure that

the output from the front-end does not saturate the

output driver stage that follows. This gain control

allows input signals of up to 2.6 mA peak.

Automatic Gain Control (AGC)

The AGC circuit monitors the voltages from the output

driver and compares them to an internal reference

level produced via the on-chip bandgap reference

circuit. When this level is exceeded, the gain of the

front-end is reduced by controlling the feedback

resistor Rf.

The input pin TZ_IN is biased at 3 V below the supply

voltage VCC, allowing a photodetector to easily be

reverse biased by connecting the anode to ground,

and hence enabling single rail operation.

A long time-constant integrator is used within the

control loop of the AGC with a typical low frequency

cut-off of 8 kHz.

The front-end stage has its own supply pins, VCC2

(+5 V) and VEE2 (0 V), to achieve optimum noise

performance and maintain integrity of the high-speed

signal path. The remainder of the circuitry uses the

supply pins VCC1 (+5 V) and VEE1 (0 V).

Power Supply Rejection

An on-chip power supply rejection circuit is used to

achieve both single-ended and differential rejection

from the +5 V VCC rail.

This stable DC reference minimizes the variation in

the noise and bandwidth performance of the circuit

due to power supply variation of +4.7 V to +5.3 V.

Output driver stage

The output driver acts as a buffer stage, capable of

swinging up to 150 mVpk-pk into a 50 W load (or

The AC rejection ensures that performance is not

degraded by noise on the power supply. The circuit

achieves a power supply rejection on the outputs of

40 dB for both single-ended and differential operation,

up to 100 kHz. The use of external decoupling will

help to remove any unwanted signals at higher

frequencies.

300 mVpk-pk differential into a 100 W load). The

small output swings allow ease of use with low

voltage post amplifiers (e.g. 3.3 V parts).

The output can be configured in a differential or

single-ended mode. For differential operation, the pad

ACGND is not wire bonded and the circuit provides a

fully balanced 100 W output, on the pins OUTP and

OUTN. For single-ended operation, the ACGND pad

is required to be wire bonded to an external capacitor

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LightCharger^TM622 Mb/s Transimpedance Amplifier

Final

Absolute Maximum Ratings

These are stress ratings only. Exposure to stresses beyond these maximum ratings may cause permanent damage

to, or affect the reliability of the device. Avoid operating the device outside the recommended operating conditions

defined below.

Symbol

VCC

Parameter

Min

Max

Unit

Supply Voltage

–0.7

–0.5

6.0

Voltage at any input or output

VCC+0.5

Current sourced into any input or output except

TZ_IN

I_IO

–20

–5

I_IO

Current sourced into pin TZ_IN

Electrostatic Discharge (100 pF, 1.5 kW) except

TZ_IN

V_ESD

–2

Electrostatic Discharge (100 pF, 1.5 kW) pin

TZ_IN

V_ESD

Tstg

–0.25

–65

0.25

150

Storage Temperature

°C

Recommended Operating Conditions

Symbol

VCC

Parameter

Min

Typ

Max

5.3

Unit

Supply Voltage

Operating Junction Temperature

4.7

5.0

–40

°C

DC Electrical Characteristics

Symbol

ICC

Parameter

Min

Typ

Max

Unit

Supply Current

lagc

Vin

AGC Threshold

VCC–3.2

2.9

mA pk-pk

Input Bias Voltage

Output Bias Voltage

Output Resistance

VCC–3.0

VCC–2.7

Vout

Rout

3.5

41-DST-01 §Rev 1.5 §May 24/02

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LightCharger^TM622 Mb/s Transimpedance Amplifier

Final

AC Electrical Characteristics

Symbol

Parameter

Min

Typ

Max

Unit

BW (3dB)

Small Signal Bandwidth at –3dB point

400

MHz

Single-ended Transimpedance (50W on output,

f = 50 MHz)

5.6

7.6

Dri

Input Data Rate

622

300

Mb/s

mV pk-pk

kHz

Voutmax

Flf

Maximum Differential Output Voltage

Low Frequency Cut-off

Power Supply Rejection Ratio (single-ended or

differential) up to 100kHz

PSRR

l_OL

Input Current before overload (622 Mb/s NRZ

data)

2600

+1.6

mA pk-pk

Pol

Optical Overload

dBm

Nrms

Input Noise Current (in 400 MHz)

nA rms

DC and AC electrical characteristics are specified under the following conditions:

Supply Voltage (VCC).........................................4.7 V to 5.3 V

Junction Temperature (Tj)..................................–40°C to 95°C

Load Resistor (R_L)...............................................50 W AC coupled via 220 nF (single-ended)

Photodetector Capacitance (Cd).......................0.5 pF

Input bond wire inductance................................1 nH

Photodetector responsivity.................................0.9 A/W

Transimpedance (Tz) measured with 1 mA mean photocurrent

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LightCharger^TM622 Mb/s Transimpedance Amplifier

Final

Bondpad Configuration

The bondpad center coordinates are referenced to the center of the lower left pad (pad 4). All dimensions are in

microns (µm).

Pad No.

Name

Coordinate

(µm)

Coordinate

(µm)

VCC2

VCC1

TZ_IN

VEE2

-307.3

679.0

549.0

315.0

ACGND

VEE1

130.0

260.0

390.0

690.7

VEE1

OUTN

OUTP

VCC1

155.0

285.0

679.0

41-DST-01 §Rev 1.5 §May 24/02

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SE1010W

LightCharger^TM622 Mb/s Transimpedance Amplifier

Final

The diagram below shows the bondpad configuration of the SE1010W Transimpedance Am plifier. Note that the

diagram is not to scale. All bondpads are 92 µm x 92 µm with a passivation opening of 82 µm x 82 µm. There are two

VCC1 and two VEE1 pads for ease of wire bonding; these pad pairs are connected on-chip and only one pad of each

type is required to be bonded out.

Mechanical die visual inspection criteria per MIL-STD-883 Method 2010.10 Condition B Class Level B.

998.0

Top

View

126.0

130.0 130.0 130.0

307.3

300.7

123.0

1250.0

Side View

All Dimensions in Microns (µm)

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LightCharger^TM622 Mb/s Transimpedance Amplifier

Final

Applications Information

For optimum performance it is recommended that the device be used in differential mode with the circuit shown in the

first diagram below.

Note that the two VCC1 pads (2, 10) are connected on-chip, as are the VEE1 pads (6, 7), and only one pad of each

type is required to be bonded out. However, in order to minimize inductance for optimum high speed performance, it

is recommended that all power pads are wire bonded. The VEE2 and VCC2 pads are not connected on chip to VEE1

and VCC1 respectively, and must be bonded out separately.

Connections for differential operation:

+5 V

1 nF min

VCC2

VCC1

TZ Amplifier

SE1010W

OUTP

OUTN

TZ_IN

To 50 O loads,

AC coupled

VEE2

VEE1

ACGND

0 V or

–ve bias

0 V

Connections for single-ended operation:

+5 V

1 nF min

VCC2

VCC1

To 50 O load,

AC coupled

TZ Amplifier

SE1010W

OUTP

OUTN

TZ_IN

VEE2

VEE1

ACGND

1 nF

0 V or

–ve bias

0 V

41-DST-01 §Rev 1.5 §May 24/02

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LightCharger^TM622 Mb/s Transimpedance Amplifier

Final

http://www.sige.com

Headquarters: Canada

Phone: +1 613 820 9244

Fax:

+1 613 820 4933

2680 Queensview Drive

Ottawa ON K2B 8J9 Canada

sales@sige.com

U.S.A.

United Kingdom

1150 North First Street

San Jose, CA

1010 Cambourne Business Park

Cambourne

USA 95112

Cambridge CB3 6DP

Phone: +1 408 998 5060

Phone: +44 1223 598 444

Fax:

+1 408 998 5062

Fax:

+44 1223 598 035

Product Preview

The datasheet contains information from the product concept specification. SiGe Semiconductor reserves the right to change

information at any time without notification.

Preliminary

The datasheet contains information from the design target specification. SiGe Semiconductor reserves the right to change

information at any time without notification.

Final

The datasheet contains information from the final product specification. SiGe Semiconductor reserves the right to change

information at any time without notification. Production testing may not include testing of all parameters.

Information furnished is believed to be accurate and reliable and is provided on an “as is” basis. SiGe Semiconductor Inc. assumes

no responsibility or liability for the direct or indirect consequences of use of such information nor for any infringement of patents or

other rights of third parties, which may result from its use. No license or indemnity is granted by implication or otherwise under any

patent or other intellectual propertyrights of SiGe Semiconductor Inc. or third parties. Specifications mentioned in this publication

are subject to change without notice. This publication supersedes and replaces all information previously supplied. SiGe

Semiconductor Inc. products are NOT authorized for use in implantation or life support applications or systems without express

written approval from SiGe Semiconductor Inc.

LightCharger™ is a trademark owned by SiGe Semiconductor.

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SE1010W [SIGE]

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