S-5840BAG-M5T1U [SII]
TEMPERATURE SWITCH IC;
| 型号： | S-5840BAG-M5T1U |
| 厂家： | 
SEIKO INSTRUMENTS INC |
| 描述： | TEMPERATURE SWITCH IC |
| 文件： | 总15页 (文件大小：896K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S-5840B Series
TEMPERATURE SWITCH IC (THERMOSTAT IC) WITH LATCH
www.sii-ic.com
© SII Semiconductor Corporation, 2007-2012
Rev.2.1_01
The S-5840B Series is a temperature switch IC (thermostat IC) with a latch function which detects the temperature with a
temperature accuracy of 2.5°C. When the temperature reaches the detection temperature, the output signal is inverted and
being latched until the S-5840B Series detects decrease in a power supply voltage.
The S-5840B Series operates at the lower power supply voltage of 1.0 V and its current consumption is 12 μA typ. due to
CMOS configuration.
The S-5840B Series has a temperature sensor using negative temperature coefficient, a reference voltage generation
circuit, comparator, voltage detection circuit and noise suppression circuit on a chip, and they are enclosed in package
SOT-23-5.
Features
•
•
•
•
•
•
•
•
•
•
Detection temperature:
Wide voltage operation:
Release voltage:
TDET = +55 to +95°C, +1°C step, detection accuracy: 2.5°C
V
DD = 1.0 V to 10.0 V
V
RET = 2.2 V to 3.4 V, 0.1 V step
Low current consumption:
IDD = 12 μA typ. (Ta = +25°C).
Built-in noise suppression circuit for preventing temperature detection malfunction
Output logic level is fixed by the latch after temperature detection.
Selectable output logic in active "H" or "L"
Selectable output form in CMOS or Nch open drain
Operation temperature range:
Lead-free, Sn 100%, halogen-free*1
Ta = −40°C to +100°C
*1. Refer to " Product Name Structure" for details.
Applications
•
•
Game console
Electronic device
Package
•
SOT-23-5
1
TEMPERATURE SWITCH IC (THERMOSTAT IC) WITH LATCH
S-5840B Series
Rev.2.1_01
Block Diagrams
1. CMOS output product
VDD
Temperature
sensor
+
−
CD
VREF
Reference voltage
DET
Q
D
generation circuit
D-F/F
CK
R
Voltage
detector
RT
VSS
Figure 1
2. Nch open drain output product
VDD
Temperature
sensor
+
−
CD
VREF
Reference voltage
generation circuit
DET
Q
D
D-F/F
CK
R
Voltage
detector
RT
VSS
Figure 2
2
TEMPERATURE SWITCH IC (THERMOSTAT IC) WITH LATCH
S-5840B Series
Rev.2.1_01
Product Name Structure
Users are able to select the option for detection temperature, output form and logic, release voltage for the S-5840B Series.
1. Product name
S-5840B xx
-
M5T1
x
Environmental code
U:
G:
Lead-free (Sn 100%), halogen-free
Lead-free (for details, please contact our sales office)
Package abbreviation and IC packing specifications*1
M5T1: SOT-23-5, tape
Option*2
*1. Refer to the tape drawing.
*2. Option list
•
•
•
•
The detection temperature (TDET) can be set in the range of +55°C to +95° at 1°C step.
The DET pin output can be selected the output logic in active "H" or "L".
The DET pin output can be selected the output form in CMOS or Nch open drain.
The release voltage (VRET) can be set in the range of 2.2 V to 3.4 V at 0.1 V step.
2. Package
Table 1 Package Drawing Codes
Package Name
Dimension
Tape
Reel
SOT-23-5
MP005-A-P-SD
MP005-A-C-SD
MP005-A-R-SD
3. Product name list
Table 2
DET Pin Output Form DET Pin Output Logic
Detection Temperature
Release Voltage
(VRET
Product Name
(TDET
)
)
S-5840BAG-M5T1x
S-5840BAH-M5T1x
S-5840BAJ-M5T1x
+60°C
+90°C
+80°C
CMOS
Active "L"
Active "H"
Active "L"
2.9 V
2.9 V
2.2 V
CMOS
Nch open drain
Remark1. Please contact our sales office for options other than that specified above.
2. x: G or U
3. Please select products of environmental code = U for Sn 100%, halogen-free products.
3
TEMPERATURE SWITCH IC (THERMOSTAT IC) WITH LATCH
S-5840B Series
Rev.2.1_01
Pin Configuration
1. SOT-23-5
Top view
Table 3
5
4
Pin No.
Symbol
RT*1
Description
1
2
Test pin
GND pin
VSS
Capacitor connection pin for setting
malfunction prevention time
Output pin
3
CD
1
2
3
4
5
DET
VDD
Figure 3
Power supply pin
*1. Set the RT pin open in use.
4
TEMPERATURE SWITCH IC (THERMOSTAT IC) WITH LATCH
S-5840B Series
Rev.2.1_01
Absolute Maximum Ratings
Table 4
(Ta = +25°C unless otherwise specified)
Item
Power supply voltage (VSS = 0 V)
Pin voltage
Symbol
Absolute Maximum Rating
Unit
V
VDD
VSS + 12
VRT, VCD
VSS − 0.3 to VDD + 0.3
VSS − 0.3 to VDD + 0.3
VSS − 0.3 to VSS + 12.0
300 (when not mounted on board)
600*1
V
CMOS output
Output voltage
V
VDET
Nch open drain output
V
mW
mW
°C
°C
Power dissipation
PD
Operating temperature
Storage temperature
Topr
Tstg
−40 to +100
−55 to +125
*1. When mounted on board
[Mounted board]
(1) Board size:
114.3 mm × 76.2 mm × t1.6 mm
(2) Board name:
JEDEC STANDARD51-7
Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical
damage. These values must therefore not be exceeded under any conditions.
Recommended Values for External Parts
Table 5
Item
Symbol
Value
4.7
Unit
nF
CD capacitance
CD
5
TEMPERATURE SWITCH IC (THERMOSTAT IC) WITH LATCH
S-5840B Series
Rev.2.1_01
DC Electrical Characteristics
1. CMOS output product
Table 6
(Ta = +25°C, unless otherwise specified)
Test
Circuit
Item
Symbol
VDD
Condition
Min.
Typ.
Max.
Unit
Power supply voltage
Detection temperature
−
−
1.0
TDET − 2.5
2
−
TDET
10.0
TDET + 2.5
−
V
1
1
2
+TD
°C
VDD = 3.5 V,
IDETH
V
DET = 2.7 V
9.4
mA
Output current
Apply to DET
pin
IDETL
VDET = 0.4 V
0.5
2.8
−
mA
V
2
Release voltage for built-in
voltage detector
VR
−
VRET × 0.98
VRET
VRET × 1.02
−
Hysteresis width for built-in
voltage detector
VHYS
−
−
−
−
VRET
×
0.05
−
−
V
−
−
1
ΔVRET
ΔTa• VRET
Temperature coefficient
for built-in voltage detector
Current consumption
during operation
Ta = −40°C to +100°C
100
12
ppm/°C
μA
IDD
VDD = 3.5 V
24
2. Nch open drain output product
Table 7
(Ta = +25°C, unless otherwise specified)
Test
Circuit
Item
Symbol
VDD
Condition
Min.
Typ.
Max.
Unit
Power supply voltage
Detection temperature
−
−
1.0
TDET − 2.5
0.5
−
TDET
10.0
TDET + 2.5
−
V
1
1
2
+TD
°C
IDETL
VDET = 0.4 V, VDD = 3.5 V
2.8
mA
Output current
ILEAK
VDET = 10.0 V, VDD = 3.5 V
−
−
100
nA
V
2
Release voltage for built-in
voltage detector
VR
−
VRET × 0.98
VRET
VRET × 1.02
−
Hysteresis width for built-in
voltage detector
VHYS
−
−
−
VRET
×
0.05
−
−
V
−
−
ΔVRET
ΔTa• VRET
Temperature coefficient for
built-in voltage detector
Ta = −40°C to +100°C
100
ppm/°C
Current consumption
during operation
IDD
VDD = 3.5 V
−
12
24
μA
1
AC Electrical Characteristics
Table 8
Test
Circuit
Item
Symbol
tnoise
Condition
Min.
10
Typ.
30
Max.
50
Unit
ms
CD = 4.7 nF, VDD = 3.5 V,
Noise suppression time
−
Ta = detection temperature
6
TEMPERATURE SWITCH IC (THERMOSTAT IC) WITH LATCH
S-5840B Series
Rev.2.1_01
Test Circuits
Open
A
R *1
100 kΩ
VDD
RT
V
C
IN
S-5840B Series
VSS
DET
CD
V
L
C
C
D
*1.
Resistor (R) is unnecessary for the CMOS output product.
Figure 4 Test Circuit 1
Open
VDD
RT
V
CIN
S-5840B Series
DET
A
CD
VSS
V
CD
CL
Figure 5 Test Circuit 2
7
TEMPERATURE SWITCH IC (THERMOSTAT IC) WITH LATCH
S-5840B Series
Rev.2.1_01
Operation
1. Basic operation
The S-5840B Series is a temperature switch IC (thermostat IC) which detects the temperature and sends a signal to an
external device. The users can select a combination of the parameters such as detection temperature and release
voltage.
Following is about the operation when the DET pin output logic is active "H".
When the power supply voltage is turned on, the DET pin voltage goes to "L" since the flip-flop circuit in the detection
circuit is cleared by the voltage detection circuit. Temperature detection then starts and the DET pin is held "L" as long
as the temperature is lower than the detection temperature. When the temperature rises and when the temperature
exceeds the detection temperature; longer than the time defined by the capacitor connected to the CD pin, the DET pin
goes to "H". Once the over-temperature is detected and the DET pin goes to "H", the state is held by the flip-flop circuit.
In order to release the state, the power supply voltage should be set under the detection voltage (VR − VHYS) of the built-
in voltage detector circuit to reset the internal circuit.
Using the internal reference voltage and built-in temperature sensor, a detection temperature accuracy of 2.5°C is
achieved in the S-5840B Series.
2. Noise suppression circuit
The noise suppression circuit prevents malfunction of the temperature switch caused by noise.
The noise suppression circuit starts charging the capacitor connected to the CD pin when the output of the internal
comparator enters the active state due to an external noise or a rapid change in the power supply voltage. In the normal
operation, the flip-flop circuit is set when the capacitor is charged to a certain voltage. But in the noise triggered
operation, the comparator output goes back to the inactive state and the CD pin voltage is held "L" since the charging of
the external capacitor (CD) is insufficient. As a result, the DET pin is held "L" and malfunction does not occur.
Noise suppression time (tnoise) is determined by the time constant consisting of internal constant current and the
capacitance of the CD, and calculated by the following equation.
t
noise (ms) = Noise suppression time coefficient × CD (nF)
Noise suppression time coefficient (Ta = +25°C): 6.4 typ.
The CD has no limitation as long as its leak current is negligible compared to the internal constant current. The difference
occurs in delay time if the capacitor has a leak current.
8
TEMPERATURE SWITCH IC (THERMOSTAT IC) WITH LATCH
S-5840B Series
Rev.2.1_01
Standard Circuit
R*1
Open
100 kΩ
VDD
RT
S-5840B Series
DET
CIN
CD
VSS
CL
CD
*1. Resistor (R) is unnecessary for the CMOS output product.
Figure 6
Caution The above connection diagram will not guarantee successful operation. Perform thorough evaluation
using actual application to set the constant.
Precautions
• Set a capacitor (CIN) of 0.1 μF or more between VDD and VSS pin for stabilization.
• A capacitor (CL) of about 1 μF should be connected to the DET pin to prevent malfunction caused by noise due to the
power being on.
• Do not connect a capacitor to the RT pin (leave the RT pin open). Otherwise, this IC may oscillate.
• Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic
protection circuit.
• SII Semiconductor Corporation claims no responsibility for any disputes arising out of or in connection with any
infringement by products, including this IC, of patents owned by a third party.
9
TEMPERATURE SWITCH IC (THERMOSTAT IC) WITH LATCH
S-5840B Series
Rev.2.1_01
Characteristics (Typical Data)
1. Current consumption vs. Power supply voltage characteristics
VSS = 0 V
13
12
100C
25C
40C
11
10
9
0
1 2 3 4 5 6 7 8 9 10 11 12
V
DD [V]
2. DET pin current "H" vs. Power supply voltage characteristics (CMOS output product only)
V
DET = VDD 0.8 V
25
20
15
10
5
25C
40C
100C
0
0
1 2 3 4 5 6 7 8 9 10 11 12
V
DD [V]
3. DET pin current "L" vs. Power supply voltage characteristics
V
DET = 0.4 V
10
8
25C
40C
6
4
100C
2
0
0
1
2
3
4
5
6
7
8
9 10 11 12
V
DD [V]
4. Noise suppression time vs. Power supply voltage characteristics
CD = 4.7 nF
50
45
40
35
30
25
20
15
10
40C
25C
100C
0
1 2 3 4 5 6 7 8 9 10 11 12
V
DD [V]
10
TEMPERATURE SWITCH IC (THERMOSTAT IC) WITH LATCH
S-5840B Series
Rev.2.1_01
Marking Specification
1. SOT-23-5
Top view
(1) to (3):
(4):
Product code (refer to Product name vs. Product code)
Lot number
5
4
(1) (2) (3) (4)
1
2
3
Product name vs. Product code
Product Code
Product Name
(1)
H
(2)
8
(3)
S-5840BAG-M5T1x
S-5840BAH-M5T1x
S-5840BAJ-M5T1x
Remark 1. x: G or U
M
N
O
H
8
H
8
2. Please select products of environmental code = U for Sn 100%, halogen-free products.
11
2.9±0.2
1.9±0.2
4
5
+0.1
-0.06
1
2
3
0.16
0.95±0.1
0.4±0.1
No. MP005-A-P-SD-1.2
TITLE
SOT235-A-PKG Dimensions
MP005-A-P-SD-1.2
No.
SCALE
UNIT
mm
SII Semiconductor Corporation
4.0±0.1(10 pitches:40.0±0.2)
+0.1
-0
2.0±0.05
0.25±0.1
ø1.5
+0.2
-0
4.0±0.1
ø1.0
1.4±0.2
3.2±0.2
3
4
2 1
5
Feed direction
No. MP005-A-C-SD-2.1
TITLE
SOT235-A-Carrier Tape
MP005-A-C-SD-2.1
No.
SCALE
UNIT
mm
SII Semiconductor Corporation
12.5max.
9.0±0.3
Enlarged drawing in the central part
ø13±0.2
(60°)
(60°)
No. MP005-A-R-SD-1.1
TITLE
SOT235-A-Reel
MP005-A-R-SD-1.1
No.
SCALE
UNIT
QTY.
3,000
mm
SII Semiconductor Corporation
Disclaimers (Handling Precautions)
1. All the information described herein (product data, specifications, figures, tables, programs, algorithms and
application circuit examples, etc.) is current as of publishing date of this document and is subject to change without
notice.
2. The circuit examples and the usages described herein are for reference only, and do not guarantee the success of
any specific mass-production design.
SII Semiconductor Corporation is not responsible for damages caused by the reasons other than the products or
infringement of third-party intellectual property rights and any other rights due to the use of the information described
herein.
3. SII Semiconductor Corporation is not responsible for damages caused by the incorrect information described herein.
4. Take care to use the products described herein within their specified ranges. Pay special attention to the absolute
maximum ratings, operation voltage range and electrical characteristics, etc.
SII Semiconductor Corporation is not responsible for damages caused by failures and/or accidents, etc. that occur
due to the use of products outside their specified ranges.
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country where they are used and verify suitability, safety and other factors for the intended use.
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body and devices that directly affect human life, etc.
Prior consultation with our sales office is required when considering the above uses.
SII Semiconductor Corporation is not responsible for damages caused by unauthorized or unspecified use of our
products.
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The user of these products should therefore take responsibility to give thorough consideration to safety design
including redundancy, fire spread prevention measures, and malfunction prevention to prevent accidents causing
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The information described herein does not convey any license under any intellectual property rights or any other
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described herein for the purpose of disclosing it to a third-party without the express permission of SII Semiconductor
Corporation is strictly prohibited.
14. For more details on the information described herein, contact our sales office.
1.0-2016.01
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