S-8211DBE-M5T1U [SII]
BATTERY PROTECTION IC;型号: | S-8211DBE-M5T1U |
厂家: | SEIKO INSTRUMENTS INC |
描述: | BATTERY PROTECTION IC |
文件: | 总38页 (文件大小:2002K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
S-8211D Series
BATTERY PROTECTION IC
FOR 1-CELL PACK
www.sii-ic.com
© SII Semiconductor Corporation, 2005-2015
Rev.6.5_02
The S-8211D Series is a protection IC for 1-cell lithium-ion / lithium-polymer rechargeable battery and includes high-accuracy
voltage detection circuits and delay circuits.
The S-8211D Series is suitable for protecting 1-cell rechargeable lithium-ion / lithium-polymer battery packs from overcharge,
overdischarge, and overcurrent.
Features
• High-accuracy voltage detection circuit
Overcharge detection voltage
3.6 V to 4.5 V (5 mV step)
Accuracy 25 mV (Ta = +25°C)
Accuracy 30 mV (Ta = −5°C to +55°C)
Accuracy 50 mV
Overcharge release voltage
3.5 V to 4.4 V*1
Overdischarge detection voltage
Overdischarge release voltage
Discharge overcurrent detection voltage
Load short-circuiting detection voltage
2.0 V to 3.0 V (10 mV step)
2.0 V to 3.4 V*2
0.05 V to 0.30 V (10 mV step) Accuracy 15 mV
0.5 V (fixed) Accuracy 200 mV
Accuracy 50 mV
Accuracy 100 mV
• Detection delay times are generated only by an internal circuit (external capacitors are unnecessary).
Accuracy 20%
• High-withstand voltage (VM pin and CO pin: Absolute maximum rating = 28 V)
• 0 V battery charge function "available" / "unavailable" is selectable.
• Power-down function "available" / "unavailable" is selectable.
• Wide operation temperature range
• Low current consumption
During operation
During power-down
• Lead-free, Sn 100%, halogen-free*3
Ta = −40°C to +85°C
3.0 μA typ., 5.5 μA max. (Ta = +25°C)
0.2 μA max. (Ta = +25°C)
*1. Overcharge release voltage = Overcharge detection voltage − Overcharge hysteresis voltage
(Overcharge hysteresis voltage can be selected as 0 V or from a range of 0.1 V to 0.4 V in 50 mV step.)
*2. Overdischarge release voltage = Overdischarge detection voltage + Overdischarge hysteresis voltage
(Overdischarge hysteresis voltage can be selected as 0 V or from a range of 0.1 V to 0.7 V in 100 mV step.)
*3. Refer to " Product Name Structure" for details.
Applications
• Lithium-ion rechargeable battery pack
• Lithium-polymer rechargeable battery pack
Packages
• SOT-23-5
• SNT-6A
1
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series
Rev.6.5_02
Block Diagram
Output control circuit
0 V battery charge /
Oscillator control
circuit
Divider control
charge inhibition circuit
DO
circuit
VDD
+
−
Charger detection circuit
CO
+
−
Overcharge
detection
comparator
Discharge overcurrent detection
comparator
RVMD
VM
+
−
RVMS
Overdischarge
detection
comparator
+
−
Load short-circuiting detection
comparator
VSS
Remark All diodes shown in figure are parasitic diodes.
Figure 1
2
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series
Rev.6.5_02
Product Name Structure
1. Product name
1. 1 SOT-23-5
S-8211D xx - M5T1 x
Environmental code
U: Lead-free (Sn 100%), halogen-free
S: Lead-free, halogen-free
G: Lead-free (for details, please contact our sales office)
Package name (abbreviation) and IC packing specifications*1
M5T1: SOT-23-5, Tape
Serial code*2
Sequentially set from AA to ZZ
*1. Refer to the tape drawing.
*2. Refer to "3. Product name list".
1. 2 SNT-6A
S-8211D xx - I6T1 U
Environmental code
U: Lead-free (Sn 100%), halogen-free
Package name (abbreviation) and IC packing specifications*1
I6T1: SNT-6A, Tape
Serial code*2
Sequentially set from AA to ZZ
*1. Refer to the tape drawing.
*2. Refer to "3. Product name list".
3
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series
Rev.6.5_02
2. Packages
Table 1 Package Drawing Codes
Package Name
SOT-23-5
Dimension
Tape
Reel
Land
MP005-A-P-SD
PG006-A-P-SD
MP005-A-C-SD
PG006-A-C-SD
MP005-A-R-SD
PG006-A-R-SD
−
SNT-6A
PG006-A-L-SD
3. Product name list
3. 1 SOT-23-5
Table 2
Discharge
Over-
charge
Detection Release Detection Release
Over-
Over-
Over-
charge discharge discharge
Overcurrent
Detection
Voltage
0 V Battery
Charge
Function
Delay Time Power-down
Combination*1 Function
Product Name
Voltage
[VCU
Voltage
[VCL]
Voltage
[VDL]
Voltage
[VDU
]
]
[VDIOV
]
S-8211DAD-M5T1x
S-8211DAE-M5T1x
S-8211DAH-M5T1x
S-8211DAI-M5T1x
S-8211DAJ-M5T1x
S-8211DAK-M5T1x
S-8211DAL-M5T1x
S-8211DAM-M5T1x
S-8211DAR-M5T1x
S-8211DAS-M5T1x
S-8211DAU-M5T1y
S-8211DAV-M5T1y
S-8211DAW-M5T1y
S-8211DBB-M5T1U
S-8211DBD-M5T1U
S-8211DBE-M5T1U
S-8211DBF-M5T1U
S-8211DBG-M5T1U
4.280 V
4.280 V
4.275 V
4.325 V
4.280 V
4.280 V
4.280 V
4.275 V
3.600 V
3.600 V
3.650 V
3.700 V
3.800 V
4.350 V
4.350 V
4.350 V
4.230 V
4.250 V
4.180 V
4.180 V
4.175 V
4.075 V
4.080 V
4.080 V
4.080 V
4.075 V
3.600 V
3.500 V
3.550 V
3.600 V
3.700 V
4.150 V
4.150 V
4.150 V
4.080 V
4.050 V
2.50 V
2.50 V
2.30 V
2.50 V
3.00 V
2.30 V
2.80 V
2.50 V
2.00 V
2.50 V
2.50 V
2.50 V
2.50 V
2.10 V
2.10 V
2.10 V
3.00 V
2.70 V
2.80 V
2.70 V
2.40 V
2.90 V
3.00 V
2.30 V
2.80 V
2.90 V
2.30 V
2.80 V
2.80 V
2.80 V
2.80 V
2.20 V
2.20 V
2.20 V
3.10 V
3.00 V
0.19 V
0.19 V
0.10 V
0.15 V
0.08 V
0.13 V
0.10 V
0.15 V
0.15 V
0.10 V
0.15 V
0.05 V
0.10 V
0.26 V
0.11 V
0.14 V
0.15 V
0.20 V
Unavailable
Unavailable
Available
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Unavailable
Available
Unavailable
Available
Unavailable
Available
Available
Available
Available
Available
Unavailable
Unavailable
Unavailable
Unavailable
Unavailable
*1. Refer to Table 4 about the details of the delay time combinations (1).
Remark1. Please contact our sales office for the products with detection voltage value other than those specified above.
2. x: G or U
y: S or U
3. Please select products of environmental code = U for Sn 100%, halogen-free products.
4
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series
Rev.6.5_02
3. 2 SNT-6A
Table 3
Discharge
Over-
Over-
Over-
Over-
Overcurrent
Detection
Voltage
charge
charge discharge discharge
0 V Battery
Charge
Function
Delay Time Power-down
Combination*1 Function
Product Name
Detection Release Detection Release
Voltage
[VCU
Voltage
[VCL]
Voltage
[VDL]
Voltage
[VDU
]
]
[VDIOV
]
S-8211DAD-I6T1U
S-8211DAE-I6T1U
S-8211DAF-I6T1U
S-8211DAG-I6T1U
S-8211DAI-I6T1U
S-8211DAN-I6T1U
S-8211DAQ-I6T1U
S-8211DAT-I6T1U
S-8211DAX-I6T1U
S-8211DAY-I6T1U
S-8211DAZ-I6T1U
S-8211DBA-I6T1U
S-8211DBC-I6T1U
4.280 V
4.280 V
4.250 V
4.280 V
4.325 V
4.280 V
4.280 V
4.280 V
4.280 V
3.900 V
3.800 V
4.180 V
4.180 V
4.050 V
4.080 V
4.075 V
4.080 V
4.080 V
4.080 V
4.080 V
3.900 V
3.500 V
2.50 V
2.50 V
2.40 V
2.30 V
2.50 V
2.30 V
2.30 V
2.70 V
2.00 V
2.00 V
2.40 V
2.80 V
2.70 V
2.90 V
2.30 V
2.90 V
3.00 V
2.30 V
2.70 V
2.00 V
2.30 V
2.70 V
0.19 V
0.19 V
0.10 V
0.08 V
0.15 V
0.10 V
0.10 V
0.08 V
0.11 V
0.15 V
0.07 V
Unavailable
Unavailable
Available
(1)
(1)
(2)
(1)
(1)
(3)
(3)
(3)
(3)
(1)
(1)
(1)
(1)
Available
Available
Unavailable
Unavailable
Available
Unavailable
Unavailable
Unavailable
Unavailable
Unavailable
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
4.000 V
4.250 V
3.900 V
4.150 V
2.35 V
3.00 V
2.65 V
3.10 V
0.10 V
0.20 V
Unavailable
*1. Refer to Table 4 about the details of the delay time combinations (1) to (3).
Remark Please contact our sales office for the products with detection voltage value other than those specified above.
Table 4
Overcharge Detection Overdischarge Detection
Discharge Overcurrent
Detection Delay Time
Load Short-circuiting
Detection Delay Time
Delay Time
Combination
Delay Time
[tCU
Delay Time
[tDL]
]
[tDIOV
]
[tSHORT]
(1)
(2)
(3)
1.2 s
1.2 s
1.2 s
150 ms
75 ms
9 ms
9 ms
300 μs
300 μs
300 μs
150 ms
18 ms
Remark The delay times can be changed within the range listed Table 5. For details, please contact our sales office.
Table 5
Delay Time
Symbol
tCU
Selection Range
Remark
Overcharge detection delay time
Overdischarge detection delay time
143 ms
38 ms
4.5 ms
−
573 ms
1.2 s*1
Select a value from the left.
Select a value from the left.
Select a value from the left.
Select a value from the left.
tDL
150 ms*1
9 ms*1
300 ms
18 ms
Discharge overcurrent detection delay time tDIOV
Load short-circuiting detection delay time
tSHORT
300 μs*1
560 μs
*1. The value is the delay time of the standard products.
5
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series
Rev.6.5_02
Pin Configurations
1. SOT-23-5
Table 6
Pin No.
1
Symbol
VM
Description
Top view
Voltage detection pin between VM pin and VSS pin
(Overcurrent / charger detection pin)
Input pin for positive power supply
Input pin for negative power supply
Connection pin of discharge control FET gate
(CMOS output)
5
4
2
3
VDD
VSS
4
5
DO
CO
1
2
3
Connection pin of charge control FET gate
(CMOS output)
Figure 2
2. SNT-6A
Table 7
Pin No.
1
Symbol
NC*1
Description
Top view
No connection
1
2
3
6
5
4
Connection pin of charge control FET gate
(CMOS output)
2
3
CO
DO
Connection pin of discharge control FET gate
(CMOS output)
4
5
VSS
VDD
Input pin for negative power supply
Input pin for positive power supply
Voltage detection pin between VM pin and VSS pin
(Overcurrent / charger detection pin)
Figure 3
6
VM
*1. The NC pin is electrically open.
The NC pin can be connected to the VDD pin or the VSS pin.
6
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series
Rev.6.5_02
Absolute Maximum Ratings
Table 8
(Ta = +25°C unless otherwise specified)
Item
Symbol
VDS
Applied Pin
VDD
Absolute Maximum Rating
Unit
Input voltage between VDD pin and
VSS pin
VSS − 0.3 to VSS + 12
V
VM pin input voltage
VVM
VDO
VCO
VM
DO
CO
VDD − 28 to VDD + 0.3
VSS − 0.3 to VDD + 0.3
VVM − 0.3 to VDD + 0.3
250 (When not mounted on board)
600*1
V
V
DO pin output voltage
CO pin output voltage
V
−
−
−
−
−
mW
mW
mW
°C
SOT-23-5
Power dissipation
PD
SNT-6A
Operation ambient temperature
Storage temperature
400*1
Topr
Tstg
−40 to +85
−55 to +125
°C
*1. When mounted on board
[Mounted board]
(1) Board size: 114.3 mm × 76.2 mm × t1.6 mm
(2) Board name: JEDEC STANDARD51-7
Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical
damage. These values must therefore not be exceeded under any conditions.
700
600
SOT-23-5
500
SNT-6A
400
300
200
100
0
100
150
50
0
Ambient Temperature (Ta) [°C]
Figure 4 Power Dissipation of Package (When Mounted on Board)
7
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series
Rev.6.5_02
Electrical Characteristics
1. Except detection delay time (Ta = +25°C)
Table 9
(Ta = +25°C unless otherwise specified)
Test
Test
Circuit
Item
Symbol
Condition
Min. Typ. Max. Unit Condi-
tion
DETECTION VOLTAGE
VCU
0.025
VCU
0.03
−
VCU
0.025
VCU
0.03
+
3.60 V to 4.50 V, adjustable
VCU
VCU
VCL
V
V
V
V
V
V
V
V
1
1
1
1
2
2
2
3
1
1
1
1
2
2
2
2
Overcharge detection voltage
VCU
3.60 V to 4.50 V, adjustable,
Ta = −5°C to +55°C*1
−
+
VCL
−
VCL +
0.05
VCL ≠ VCU
0.05
3.50 V to 4.40 V,
Overcharge release voltage
Overdischarge detection voltage
Overdischarge release voltage
VCL
VDL
VDU
adjustable
VCL = VCU
VCL
−
VCL +
0.025
VCL
0.05
VDL
−
VDL
+
2.00 V to 3.00 V, adjustable
VDL
0.05
0.05
VDU
−
VDU +
0.10
VDU ≠ VDL
VDU
VDU
VDIOV
0.10
2.00 V to 3.40 V,
Adjustable
VDU = VDL
VDU
0.05
VDIOV
−
VDU
0.05
VDIOV
+
−
+
Discharge overcurrent detection voltage VDIOV
Load short-circuiting detection voltage*2 VSHORT
0.05 V to 0.30 V, adjustable
0.015
0.015
−
−
0.30 0.50 0.70
V
V
3
4
2
2
Charger detection voltage
VCHA
−1.0 −0.7 −0.4
0 V BATTERY CHARGE FUNCTION
0 V battery charge starting charger voltage V0CHA
0 V battery charge inhibition battery voltage V0INH
INTERNAL RESISTANCE
0 V battery charge function "available"
0 V battery charge function "unavailable"
1.2
−
−
−
0.5
V
V
10
11
2
2
−
Resistance between VM pin and VDD pin
Resistance between VM pin and VSS pin
INPUT VOLTAGE
RVMD
RVMS
VDD = 1.8 V, VVM = 0 V
VDD = 3.5 V, VVM = 1.0 V
100
10
300
20
900 kΩ
5
5
3
3
40
kΩ
Operation voltage between VDD pin and VSS pin VDSOP1
Operation voltage between VDD pin and VM pin
−
−
1.5
1.5
−
−
8
V
V
−
−
−
−
VDSOP2
INPUT CURRENT (WITH POWER-DOWN FUNTION)
Current consumption during operation IOPE VDD = 3.5 V, VVM = 0 V
Current consumption during power-down IPDN VDD = VVM = 1.5 V
INPUT CURRENT (WITHOUT POWER-DOWN FUNTION)
28
1.0
3.0
5.5 μA
0.2 μA
4
4
2
2
−
−
Current consumption during operation IOPE
Current consumption during overdischarge IOPED
OUTPUT RESISTANCE
VDD = 3.5 V, VVM = 0 V
VDD = VVM = 1.5 V
1.0
0.3
3.0
2.0
5.5 μA
3.5 μA
4
4
2
2
CO pin resistance "H"
CO pin resistance "L"
DO pin resistance "H"
DO pin resistance "L"
RCOH
RCOL
RDOH
RDOL
VCO = 3.0 V, VDD = 3.5 V, VVM = 0 V 2.5
VCO = 0.5 V, VDD = 4.5 V, VVM = 0 V 2.5
VDO = 3.0 V, VDD = 3.5 V, VVM = 0 V 2.5
5
5
5
5
10
10
10
10
kΩ
kΩ
kΩ
kΩ
6
6
7
7
4
4
4
4
VDO = 0.5 V, VDD = VVM = 1.8 V
2.5
*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed
by design, not tested in production.
*2. In any conditions, load short-circuiting detection voltage (VSHORT) is higher than discharge overcurrent detection voltage
(VDIOV).
8
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series
Rev.6.5_02
2. Except detection delay time (Ta = −40°C to +85°C*1)
Table 10
(Ta = −40°C to +85°C*1 unless otherwise specified)
Test
Test
Circuit
Item
Symbol
Condition
Min. Typ. Max. Unit Condi-
tion
DETECTION VOLTAGE
VCU
0.060
VCL
0.08
−
VCU
0.040
VCL
0.065
VCL
0.04
+
Overcharge detection voltage
VCU
3.60 V to 4.50 V, adjustable
VCU
VCL
VCL
V
V
V
1
1
1
1
1
1
−
+
VCL ≠ VCU
3.50 V to 4.40 V,
Overcharge release voltage
Overdischarge detection voltage
Overdischarge release voltage
VCL
adjustable
VCL = VCU
VCL
−
+
0.08
VDL
−
VDL +
0.13
VDL
2.00 V to 3.00 V, adjustable
VDL
V
2
2
0.11
VDU
−
VDU +
0.19
VDU ≠ VDL
VDU
VDU
V
V
V
2
2
3
2
2
2
0.15
2.00 V to 3.40 V,
VDU
adjustable
VDU = VDL
VDU
0.11
VDIOV
−
VDU
0.13
VDIOV
+
Discharge overcurrent detection
voltage
−
+
VDIOV
0.05 V to 0.30 V, adjustable
VDIOV
0.021
0.024
Load short-circuiting detection voltage*2
VSHORT
VCHA
−
−
0.16 0.50 0.84
V
V
3
4
2
2
Charger detection voltage
−1.2 −0.7 −0.2
0 V BATTERY CHARGE FUNCTION
0 V battery charge starting charger voltage
V0CHA
0 V battery charge function "available"
0 V battery charge function "unavailable"
1.7
−
−
−
0.3
V
V
10
11
2
2
0 V battery charge inhibition battery voltage V0INH
INTERNAL RESISTANCE
−
Resistance between VM pin and VDD pin RVMD
Resistance between VM pin and VSS pin RVMS
INPUT VOLTAGE
VDD = 1.8 V, VVM = 0 V
VDD = 3.5 V, VVM = 1.0 V
78
300 1310 kΩ
5
5
3
3
7.2
20
44
kΩ
Operation voltage between VDD pin and VSS pin VDSOP1
Operation voltage between VDD pin and VM pin VDSOP2
−
−
1.5
1.5
−
−
8
V
V
−
−
−
−
28
INPUT CURRENT (WITH POWER-DOWN FUNTION)
Current consumption during operation IOPE
Current consumption during power-down IPDN
VDD = 3.5 V, VVM = 0 V
VDD = VVM = 1.5 V
0.7
3.0
6.0 μA
0.3 μA
4
4
2
2
−
−
INPUT CURRENT (WITHOUT POWER-DOWN FUNTION)
Current consumption during operation IOPE VDD = 3.5 V, VVM = 0 V
VDD = VVM = 1.5 V
0.7
0.2
3.0
2.0
6.0 μA
3.8 μA
4
4
2
2
Current consumption during overdischarge
OUTPUT RESISTANCE
CO pin resistance "H"
IOPED
RCOH
RCOL
RDOH
RDOL
VCO = 3.0 V, VDD = 3.5 V, VVM = 0 V 1.2
VCO = 0.5 V, VDD = 4.5 V, VVM = 0 V 1.2
VDO = 3.0 V, VDD = 3.5 V, VVM = 0 V 1.2
5
5
5
5
15
15
15
15
kΩ
kΩ
kΩ
kΩ
6
6
7
7
4
4
4
4
CO pin resistance "L"
DO pin resistance "H"
DO pin resistance "L"
VDO = 0.5 V, VDD = VVM = 1.8 V
1.2
*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed
by design, not tested in production.
*2. In any conditions, load short-circuiting detection voltage (VSHORT) is higher than discharge overcurrent detection voltage
(VDIOV).
9
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series
Rev.6.5_02
3. Detection delay time
3. 1 S-8211DAD, S-8211DAE, S-8211DAG, S-8211DAH, S-8211DAI, S-8211DAJ, S-8211DAK, S-8211DAL,
S-8211DAM, S-8211DAR, S-8211DAS, S-8211DAU, S-8211DAV, S-8211DAW, S-8211DAY, S-8211DAZ,
S-8211DBA, S-8211DBB, S-8211DBC, S-8211DBD, S-8211DBE, S-8211DBF, S-8211DBG
Table 11
Test
Condi-
tion
Test
Circuit
Item
Symbol
Condition
Min. Typ. Max. Unit
DELAY TIME (Ta = +25°C)
tCU
−
−
−
−
0.96
120
7.2
1.2
150
9
1.4
180 ms
11 ms
360 μs
s
8
8
9
9
5
5
5
5
Overcharge detection delay time
tDL
Overdischarge detection delay time
Discharge overcurrent detection delay time
Load short-circuiting detection delay time
DELAY TIME (Ta = −40°C to +85°C)*1
Overcharge detection delay time
tDIOV
tSHORT
240
300
tCU
−
−
−
−
0.7
83
1.2
2.0
255 ms
ms
540 μs
s
8
8
9
9
5
5
5
5
tDL
150
Overdischarge detection delay time
Discharge overcurrent detection delay time
Load short-circuiting detection delay time
tDIOV
tSHORT
5
9
15
150
300
*1. Since products are not screened at high and low temperature, the specification for this temperature range is
guaranteed by design, not tested in production.
3. 2 S-8211DAF
Table 12
Test
Test
Condi-
tion
Item
Symbol
Condition
Min. Typ. Max. Unit
Circuit
DELAY TIME (Ta = +25°C)
s
8
8
9
9
5
5
5
5
Overcharge detection delay time
tCU
−
−
−
−
0.96
61
1.2
75
9
1.4
90
tDL
ms
ms
μs
Overdischarge detection delay time
Discharge overcurrent detection delay time
Load short-circuiting detection delay time
DELAY TIME (Ta = −40°C to +85°C)*1
Overcharge detection delay time
tDIOV
tSHORT
7.2
11
240
300
360
s
8
8
9
9
5
5
5
5
tCU
−
−
−
−
0.7
41
5
1.2
75
9
2.0
128
15
tDL
ms
ms
μs
Overdischarge detection delay time
Discharge overcurrent detection delay time
Load short-circuiting detection delay time
tDIOV
tSHORT
150
300
540
*1. Since products are not screened at high and low temperature, the specification for this temperature range is
guaranteed by design, not tested in production.
10
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series
Rev.6.5_02
3. 3 S-8211DAN, S-8211DAQ, S-8211DAT, S-8211DAX
Table 13
Condition
Test
Min. Typ. Max. Unit Condi-
tion
Test
Item
Symbol
Circuit
DELAY TIME (Ta = +25°C)
tCU
−
−
−
−
0.96
120
14.5
240
1.2
150
18
1.4
180 ms
22 ms
360 μs
s
8
8
9
9
5
5
5
5
Overcharge detection delay time
tDL
Overdischarge detection delay time
Discharge overcurrent detection delay time
Load short-circuiting detection delay time
DELAY TIME (Ta = −40°C to +85°C)*1
Overcharge detection delay time
tDIOV
tSHORT
300
tCU
−
−
−
−
0.7
83
1.2
2.0
255 ms
ms
540 μs
s
8
8
9
9
5
5
5
5
tDL
150
Overdischarge detection delay time
Discharge overcurrent detection delay time
Load short-circuiting detection delay time
tDIOV
tSHORT
10
18
30
150
300
*1. Since products are not screened at high and low temperature, the specification for this temperature range is
guaranteed by design, not tested in production.
11
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series
Rev.6.5_02
Test Circuits
Caution Unless otherwise specified, the output voltage levels "H" and "L" at the CO pin (VCO) and the DO pin
(VDO) are judged by the threshold voltage (1.0 V) of the N-channel FET. Judge the CO pin level with
respect to VVM and the DO pin level with respect to VSS
.
1. Overcharge detection voltage, overcharge release voltage
(Test condition 1, test circuit 1)
Overcharge detection voltage (VCU) is defined as the voltage between the VDD pin and the VSS pin at which VCO goes
from "H" to "L" when the voltage V1 is gradually increased from the starting condition of V1 = 3.5 V. Overcharge
release voltage (VCL) is defined as the voltage between the VDD pin and the VSS pin at which VCO goes from "L" to
"H" when the voltage V1 is then gradually decreased. Overcharge hysteresis voltage (VHC) is defined as the difference
between overcharge detection voltage (VCU) and overcharge release voltage (VCL).
2. Overdischarge detection voltage, overdischarge release voltage
(Test condition 2, test circuit 2)
Overdischarge detection voltage (VDL) is defined as the voltage between the VDD pin and the VSS pin at which VDO
goes from "H" to "L" when the voltage V1 is gradually decreased from the starting condition of V1 = 3.5 V, V2 = 0 V.
Overdischarge release voltage (VDU) is defined as the voltage between the VDD pin and the VSS pin at which VDO
goes from "L" to "H" when the voltage V1 is then gradually increased. Overdischarge hysteresis voltage (VHD) is
defined as the difference between overdischarge release voltage (VDU) and overdischarge detection voltage (VDL).
3. Discharge overcurrent detection voltage
(Test condition 3, test circuit 2)
Discharge overcurrent detection voltage (VDIOV) is defined as the voltage between the VM pin and the VSS pin whose
delay time for changing VDO from "H" to "L" lies between the minimum and the maximum value of discharge
overcurrent delay time when the voltage V2 is increased rapidly (within 10 μs) from the starting condition of V1 = 3.5 V,
V2 = 0 V.
4. Load short-circuiting detection voltage
(Test condition 3, test circuit 2)
Load short-circuiting detection voltage (VSHORT) is defined as the voltage between the VM pin and the VSS pin whose
delay time for changing VDO from "H" to "L" lies between the minimum and the maximum value of load short-circuiting
delay time when the voltage V2 is increased rapidly (within 10 μs) from the starting condition of V1 = 3.5 V, V2 = 0 V.
5. Current consumption during operation
(Test condition 4, test circuit 2)
The current consumption during operation (IOPE) is the current that flows through the VDD pin (IDD) under the set
conditions of V1 = 3.5 V and V2 = 0 V (normal status).
6. Charger detection voltage (= abnormal charge current detection voltage)
(Test condition 4, test circuit 2)
The charger detection voltage (VCHA) is the voltage between the VM pin and the VSS pin; when gradually increasing
V1 at V1 = 1.8 V, V2 = 0 V to set V1 = VDL + (VHD/2), after that, decreasing V2 gradually from 0 V so that VDO goes "L"
to "H".
Measurement of the charger detection voltage is available for the product with overdischarge hysteresis VHD ≠ 0 only.
The abnormal charge current detection voltage is the voltage between the VM pin and the VSS pin; when gradually
decreasing V2 at V1 = 3.5 V, V2 = 0 V and VCO goes "H" to "L".
The value of the abnormal charge current detection voltage is equal to the charger detection voltage (VCHA).
12
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series
Rev.6.5_02
7. Current consumption during power-down, current consumption during overdischarge
(Test condition 4, test circuit 2)
7. 1 With power-down function
The current consumption during power-down (IPDN) is the current that flows through the VDD pin (IDD) under the set
conditions of V1 = V2 = 1.5 V (overdischarge status).
7. 2 Without power-down function
The current consumption during overdischarge (IOPED) is the current that flows through the VDD pin (IDD) under the set
conditions of V1 = V2 = 1.5 V (overdischarge status).
8. Resistance between VM pin and VDD pin
(Test condition 5, test circuit 3)
The resistance between the VM pin and the VDD pin (RVMD) is the resistance between the VM pin and the VDD pin
under the set conditions of V1 = 1.8 V, V2 = 0 V.
9. Resistance between VM pin and VSS pin
(Test condition 5, test circuit 3)
The resistance between the VM pin and the VSS pin (RVMS) is the resistance between the VM pin and the VSS pin
under the set conditions of V1 = 3.5 V, V2 = 1.0 V.
10. CO pin resistance "H"
(Test condition 6, test circuit 4)
The CO pin resistance "H" (RCOH) is the resistance at the CO pin under the set conditions of V1 = 3.5 V, V2 = 0 V, V3 = 3.0 V.
11. CO pin resistance "L"
(Test condition 6, test circuit 4)
The CO pin resistance "L" (RCOL) is the resistance at the CO pin under the set conditions of V1 = 4.5 V, V2 = 0 V, V3 = 0.5 V.
12. DO pin resistance "H"
(Test condition 7, test circuit 4)
The DO pin resistance "H" (RDOH) is the resistance at the DO pin under the set conditions of V1 = 3.5 V, V2 = 0 V, V4 = 3.0 V.
13. DO pin resistance "L"
(Test condition 7, test circuit 4)
The DO pin resistance "L" (RDOL) is the resistance at the DO pin under the set conditions of V1 = 1.8 V, V2 = 0 V, V4 = 0.5 V.
14. Overcharge detection delay time
(Test condition 8, test circuit 5)
The overcharge detection delay time (tCU) is the time needed for VCO to change from "H" to "L" just after the voltage V1
momentarily increases (within 10 μs) from overcharge detection voltage (VCU) − 0.2 V to overcharge detection voltage
(VCU) + 0.2 V under the set conditions of V2 = 0 V.
15. Overdischarge detection delay tme
(Test condition 8, test circuit 5)
The overdischarge detection delay time (tDL) is the time needed for VDO to change from "H" to "L" just after the voltage
V1 momentarily decreases (within 10 μs) from overdischarge detection voltage (VDL) + 0.2 V to overdischarge
detection voltage (VDL) − 0.2 V under the set condition of V2 = 0 V.
13
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series
Rev.6.5_02
16. Discharge overcurrent detection delay time
(Test condition 9, test circuit 5)
Discharge overcurrent detection delay time (tDIOV) is the time needed for VDO to go to "L" after the voltage V2
momentarily increases (within 10 μs) from 0 V to 0.35 V under the set conditions of V1 = 3.5 V, V2 = 0 V.
17. Load short-circuiting detection delay time
(Test condition 9, test circuit 5)
Load short-circuiting detection delay time (tSHORT) is the time needed for VDO to go to "L" after the voltage V2
momentarily increases (within 10 μs) from 0 V to 1.6 V under the set conditions of V1 = 3.5 V, V2 = 0 V.
18. 0 V battery charge starting charger voltage (0 V battery charge function "available")
(Test condition 10, test circuit 2)
The 0 V battery charge starting charger voltage (V0CHA) is defined as the voltage between the VDD pin and the VM
pin at which VCO goes to "H" (VVM + 0.1 V or higher) when the voltage V2 is gradually decreased from the starting
condition of V1 = V2 = 0 V.
19. 0 V battery charge inhibition battery voltage (0 V battery charge function "unavailable")
(Test condition 11, test circuit 2)
The 0 V battery charge inhibition battery voltage (V0INH) is defined as the voltage between the VDD pin and the VSS
pin at which VCO goes to "H" (VVM + 0.1 V or higher) when the voltage V1 is gradually increased from the starting
condition of V1 = 0 V, V2 = −4 V.
14
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series
Rev.6.5_02
R1 =
IDD
220 Ω
VDD
VSS
VDD
VSS
A
V1
V1
S-8211D Series
S-8211D Series
VM
VM
DO
CO
DO
CO
V2
V VDO
V VCO
V VDO
V VCO
COM
COM
Figure 5 Test Circuit 1
Figure 6 Test Circuit 2
IDD
A
VDD
VDD
V1
V1
S-8211D Series
S-8211D Series
VSS
VM
VSS
VM
DO
CO
DO
A
CO
A
A IVM
V2
IDO
V4
ICO
V3
V2
COM
COM
Figure 7 Test Circuit 3
Figure 8 Test Circuit 4
VDD
V1
S-8211D Series
VSS
VM
DO
CO
Oscilloscope
Oscilloscope
V2
COM
Figure 9 Test Circuit 5
15
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series
Rev.6.5_02
Operation
Remark Refer to the " Battery Protection IC Connection Example".
1. Normal status
The S-8211D Series monitors the voltage of the battery connected between the VDD pin and the VSS pin and the
voltage difference between the VM pin and the VSS pin to control charging and discharging. When the battery voltage
is in the range from overdischarge detection voltage (VDL) to overcharge detection voltage (VCU), and the VM pin
voltage is not more than the discharge overcurrent detection voltage (VDIOV), the S-8211D Series turns both the
charging and discharging control FETs on. This condition is called the normal status, and in this condition charging
and discharging can be carried out freely.
The resistance (RVMD) between the VM pin and the VDD pin, and the resistance (RVMS) between the VM pin and the
VSS pin are not connected in the normal status.
Caution When the battery is connected for the first time, discharging may not be enabled. In this case, short
the VM pin and the VSS pin, or set the VM pin’s voltage at the level of the charger detection voltage
(VCHA) or more and the discharge overcurrent detection voltage (VDIOV) or less by connecting the
charger. The S-8211D Series then returns to the normal status.
2. Overcharge status
When the battery voltage becomes higher than overcharge detection voltage (VCU) during charging in the normal
status and detection continues for the overcharge detection delay time (tCU) or longer, the S-8211D Series turns the
charging control FET off to stop charging. This condition is called the overcharge status.
The resistance (RVMD) between the VM pin and the VDD pin, and the resistance (RVMS) between the VM pin and the
VSS pin are not connected in the overcharge status.
The overcharge status is released in the following two cases ( (1) and (2) ).
(1) In the case that the VM pin voltage is higher than or equal to charger detection voltage (VCHA), and is lower than
the discharge overcurrent detection voltage (VDIOV), the S-8211D Series releases the overcharge status when the
battery voltage falls below the overcharge release voltage (VCL).
(2) In the case that the VM pin voltage is higher than or equal to the discharge overcurrent detection voltage (VDIOV),
the S-8211D Series releases the overcharge status when the battery voltage falls below the overcharge detection
voltage (VCU).
When the discharge is started by connecting a load after the overcharge detection, the VM pin voltage rises more
than the voltage at the VSS pin due to the Vf voltage of the parasitic diode. This is because the discharge current
flows through the parasitic diode in the charging control FET. If the VM pin voltage is higher than or equal to the
discharge overcurrent detection voltage (VDIOV), the S-8211D Series releases the overcharge status when the
battery voltage is lower than or equal to the overcharge detection voltage (VCU).
Caution 1. If the battery is charged to a voltage higher than overcharge detection voltage (VCU) and the
battery voltage does not fall below overcharge detection voltage (VCU) even when a heavy load is
connected, discharge overcurrent detection and load short-circuiting detection do not function
until the battery voltage falls below overcharge detection voltage (VCU). Since an actual battery
has an internal impedance of tens of mΩ, the battery voltage drops immediately after a heavy
load that causes overcurrent is connected, and discharge overcurrent detection and load short-
circuiting detection function.
2. When a charger is connected after overcharge detection, the overcharge status is not released
even if the battery voltage is below overcharge release voltage (VCL). The overcharge status is
released when the VM pin voltage goes over charger detection voltage (VCHA) by removing the
charger.
16
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series
Rev.6.5_02
3. Overdischarge status
3. 1 With power-down function
When the battery voltage falls below overdischarge detection voltage (VDL) during discharging in the normal status and
the detection continues for the overdischarge detection delay time (tDL) or longer, the S-8211D Series turns the
discharging control FET off to stop discharging. This condition is called the overdischarge status. Under the
overdischarge status, the VM pin voltage is pulled up by the resistor between the VM pin and the VDD pin in the
S-8211D Series (RVMD). When voltage difference between the VM pin and the VDD pin then is 1.3 V typ. or lower, the
current consumption is reduced to the power-down current consumption (IPDN). This condition is called the power-down
status.
The resistance (RVMS) between the VM pin and the VSS pin is not connected in the power-down status and the
overdischarge status.
The power-down status is released when a charger is connected and the voltage difference between the VM pin and
the VDD pin becomes 1.3 V typ. or higher.
When a battery in the overdischarge status is connected to a charger and provided that the VM pin voltage is lower
than charger detection voltage (VCHA), the S-8211D Series releases the overdischarge status and turns the
discharging FET on when the battery voltage reaches overdischarge detection voltage (VDL) or higher.
When a battery in the overdischarge status is connected to a charger and provided that the VM pin voltage is not lower
than charger detection voltage (VCHA), the S-8211D Series releases the overdischarge status when the battery voltage
reaches overdischarge release voltage (VDU) or higher.
3. 2 Without power-down function
When the battery voltage falls below overdischarge detection voltage (VDL) during discharging in the normal status and
the detection continues for the overdischarge detection delay time (tDL) or longer, the S-8211D Series turns the
discharging control FET off to stop discharging. This condition is called the overdischarge status. Under the
overdischarge status, the VM pin voltage is pulled up by the resistor between the VM pin and the VDD pin in the
S-8211D Series (RVMD).
The resistance (RVMS) between the VM pin and the VSS pin is not connected in the overdischarge status.
When a battery in the overdischarge status is connected to a charger and provided that the VM pin voltage is lower
than charger detection voltage (VCHA), the S-8211D Series releases the overdischarge status and turns the
discharging FET on when the battery voltage reaches overdischarge detection voltage (VDL) or higher.
When a battery in the overdischarge status is connected to a charger and provided that the VM pin voltage is not lower
than charger detection voltage (VCHA), the S-8211D Series releases the overdischarge status when the battery voltage
reaches overdischarge release voltage (VDU) or higher.
4. Discharge overcurrent status (discharge overcurrent, load short-circuiting)
When a battery in the normal status is in the status where the voltage of the VM pin is equal to or higher than the
discharge overcurrent detection voltage because the discharge current is higher than the specified value and the
status lasts for the discharge overcurrent detection delay time, the discharge control FET is turned off and discharging
is stopped. This status is called the discharge overcurrent status.
In the discharge overcurrent status, the VM pin and the VSS pin are shorted by the resistor between the VM pin and
the VSS pin (RVMS) in the S-8211D Series. However, the voltage of the VM pin is at the VDD potential due to the load
as long as the load is connected. When the load is disconnected completely, the VM pin returns to the VSS potential.
If the S-8211D Series detects that the voltage of the VM pin returns to discharge overcurrent detection voltage (VDIOV
or lower, the discharge overcurrent status is restored to the normal status.
)
The S-8211D Series will be restored to the normal status from discharge overcurrent detection status even when the
voltage of the VM pin becomes the discharge overcurrent detection voltage (VDIOV) or lower by connecting the charger.
The resistance (RVMD) between the VM pin and the VDD pin is not connected in the discharge overcurrent status.
17
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series
Rev.6.5_02
5. Abnormal charge current detection
During charging a battery which is in the normal status, if the VM pin voltage becomes lower than the charger
detection voltage (VCHA) and this status is held longer than the overcharge detection delay time (tCU), the S-8211D
Series turns off the charge-control FET to stop charging. This is abnormal charge current detection.
This function works in the case that the DO pin voltage is in "H", and the VM pin voltage becomes lower than the
charger detection voltage (VCHA). Thus if the abnormal charge current flows in the battery in the overdischarge status,
the S-8211D Series turns off the charge-control FET to stop charging; the DO pin voltage goes in "H" so that the
battery voltage becomes higher than the overdischarge detection voltage (VDL), and after the overcharge detection
delay time (tcu).
The status of abnormal charge current detection is released by the lower potential difference between the VM pin and
the VSS pin than the charger detection voltage (VCHA).
6. 0 V battery charge function "available"
This function is used to recharge a connected battery whose voltage is 0 V due to self-discharge. When the 0 V
battery charge starting charger voltage (V0CHA) or a higher voltage is applied between the EB+ pin and EB− pin by
connecting a charger, the charging control FET gate is fixed to the VDD pin voltage.
When the voltage between the gate and source of the charging control FET becomes equal to or higher than the turn-
on voltage due to the charger voltage, the charging control FET is turned on to start charging. At this time, the
discharging control FET is off and the charging current flows through the internal parasitic diode in the discharging
control FET. When the battery voltage becomes equal to or higher than overdischarge release voltage (VDU), the
S-8211D Series enters the normal status.
Caution Some battery providers do not recommend charging for a completely self-discharged battery. Please
ask the battery provider to determine whether to enable or inhibit the 0 V battery charge function.
7. 0 V battery charge function "unavailable"
This function inhibits recharging when a battery that is internally short-circuited (0 V battery) is connected. When the
battery voltage is the 0 V battery charge inhibition battery voltage (V0INH) or lower, the charging control FET gate is
fixed to the EB− pin voltage to inhibit charging. When the battery voltage is the 0 V battery charge inhibition battery
voltage (V0INH) or higher, charging can be performed.
Caution Some battery providers do not recommend charging for a completely self-discharged battery. Please
ask the battery provider to determine whether to enable or inhibit the 0 V battery charge function.
18
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series
Rev.6.5_02
8. Delay circuit
The detection delay times are determined by dividing a clock of approximately 3.5 kHz by the counter.
Remark1. The discharge overcurrent detection delay time (tDIOV) and the load short-circuiting detection delay time
(tSHORT) start when the discharge overcurrent detection voltage (VDIOV) is detected. When the load short-
circuiting detection voltage (VSHORT) is detected over the load short-circuiting detection delay time (tSHORT
after the detection of discharge overcurrent detection voltage (VDIOV), the S-8211D Series turns the
discharging control FET off within tSHORT from the time of detecting VSHORT
)
.
VDD
DO pin
tD
0 ≤ tD ≤ tSHORT
Time
VSS
Load short-circuiting detection delay time (tSHORT
VDD
)
VSHORT
VM pin
VDIOV
VSS
Time
Figure 10
2. With power-down function
When any overcurrent is detected and the overcurrent continues for longer than the overdischarge
detection delay time (tDL) without the load being released, the status changes to the power-down status at
the point where the battery voltage falls below overdischarge detection voltage (VDL).
When the battery voltage falls below overdischarge detection voltage (VDL) due to overcurrent, the
S-8211D Series turns the discharging control FET off via overcurrent detection. In this case, if the recovery
of the battery voltage is so slow that the battery voltage after the overdischarge detection delay time (tDL) is
still lower than the overdischarge detection voltage (VDL), the S-8211D Series shifts to the power-down
status.
Without power-down function
When any overcurrent is detected and the overcurrent continues for longer than the overdischarge
detection delay time (tDL) without the load being released, the status changes to the overdischarge status
at the point where the battery voltage falls below overdischarge detection voltage (VDL).
When the battery voltage falls below overdischarge detection voltage (VDL) due to overcurrent, the
S-8211D Series turns the discharging control FET off via overcurrent detection. In this case, if the recovery
of the battery voltage is so slow that the battery voltage after the overdischarge detection delay time (tDL) is
still lower than the overdischarge detection voltage (VDL), the S-8211D Series shifts to the overdischarge
status.
19
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series
Rev.6.5_02
Timing Chart
1. Overcharge detection, overdischarge detection
VCU
V
CL (VCU − VHC)
Battery voltage
V
DU (VDL + VHD
)
VDL
VDD
DO pin voltage
CO pin voltage
VSS
VDD
VSS
VEB
−
VDD
VM pin voltage
VDIOV
VSS
VEB
−
Charger connection
Load connection
Overcharge detection delay time (tCU)
(1) (2)
Overdischarge detection delay time (tDL)
(1) (3)
(1)
Status*1
*1. (1): Normal status
(2): Overcharge status
(3): Overdischarge status
Remark The charger is assumed to charge with a constant current.
Figure 11
20
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series
Rev.6.5_02
2. Discharge overcurrent detection
VCU
V
CL (VCU − VHC
)
Battery voltage
V
DU (VDL + VHD
)
VDL
VDD
DO pin voltage
VSS
VDD
CO pin voltage
VM pin voltage
VSS
VDD
VSHORT
VDIOV
VSS
Load connection
Discharge overcurrent
detection delay time (tDIOV
Load short-circuiting
detection delay time (tSHORT
)
)
(1)
(2)
(1) (2)
(1)
Status *1
*1. (1): Normal status
(2): Discharge overcurrent status
Remark The charger is assumed to charge with a constant current.
Figure 12
21
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series
Rev.6.5_02
3. Charger detection
VCU
VCL (VCU − VHC
Battery voltage
)
V
DU (VDL + VHD)
VDL
VDD
DO pin voltage
VSS
VDD
CO pin voltage
VM pin voltage
VSS
VDD
VSS
VCHA
Charger connection
Load connection
In case VM pin voltage < VCHA
Overdischarge is released at the
overdischarge detection voltage (VDL
Overdischarge detection
delay time (tDL
)
)
(1)
(2)
(1)
Status*1
*1. (1): Normal status
(2): Overdischarge status
Remark The charger is assumed to charge with a constant current.
Figure 13
22
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series
Rev.6.5_02
4. Abnormal charge current detection
VCU
VCL (VCU − VHC
)
Battery voltage
VDU (VDL + VHD
)
VDL
VDD
DO pin voltage
VSS
VDD
CO pin voltage
VM pin voltage
VSS
VDD
VSS
VCHA
Charger connection
Load connection
Overdischarge detection
delay time (tDL
Abnormal charge current detection delay time
( = overcharge detection delay time (tCU))
)
(3)
(1)
(1)
(2)
(1)
Status*1
*1. (1): Normal status
(2): Overdischarge status
(3): Overcharge status
Remark The charger is assumed to charge with a constant current.
Figure 14
23
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series
Rev.6.5_02
Battery Protection IC Connection Example
EB+
R1
VDD
Battery C1
S-8211D Series
VSS
DO
CO
VM
R2
FET1
FET2
EB−
Figure 15
Table 14 Constants for External Components
Symbol
FET1
Part
Purpose
Min.
Typ.
Max.
Remark
Threshold voltage ≤ Overdischarge detection
voltage*1
Gate to source withstand voltage ≥ Charger
voltage*2
N-channel
MOS FET
Discharge control
−
−
−
Threshold voltage ≤ Overdischarge detection
voltage*1
Gate to source withstand voltage ≥ Charger
voltage*2
N-channel
MOS FET
FET2
Charge control
−
−
−
Resistance should be as small as possible to
avoid lowering the overcharge detection
accuracy due to current consumption.*3
Connect a capacitor of 0.022 μF or higher
between VDD pin and VSS pin.*4
Select as large a resistance as possible to
prevent current when a charger is connected
in reverse.*5
ESD protection,
For power fluctuation
R1
C1
R2
Resistor
Capacitor
Resistor
100 Ω
0.022 μF
300 Ω
220 Ω
0.1 μF
2 kΩ
330 Ω
1.0 μF
4 kΩ
For power fluctuation
Protection for reverse
connection of a charger
*1. If the threshold voltage of an FET is low, the FET may not cut the charge current. If an FET with a threshold voltage equal
to or higher than the overdischarge detection voltage is used, discharging may be stopped before overdischarge is
detected.
*2. If the withstand voltage between the gate and source is lower than the charger voltage, the FET may be destroyed.
*3. If a high resistor is connected to R1, the voltage between the VDD pin and the VSS pin may exceed the absolute
maximum rating when a charger is connected in reverse since the current flows from the charger to the IC. Insert a
resistor of 100 Ω or higher as R1 for ESD protection.
*4. If a capacitor of less than 0.022 μF is connected to C1, the DO pin may oscillate when load short-circuiting is detected. Be
sure to connect a capacitor of 0.022 μF or higher to C1.
*5. If a resistor of 4 kΩ or higher is connected to R2, the charging current may not be cut when a high-voltage charger is
connected.
Caution
1. The above constants may be changed without notice.
2. It has not been confirmed whether the operation is normal or not in circuits other than the above
example of connection. In addition, the example of connection shown above and the constant do not
guarantee proper operation. Perform thorough evaluation using the actual application to set the
constant.
24
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series
Rev.6.5_02
Precautions
• The application conditions for the input voltage, output voltage, and load current should not exceed the package power
dissipation.
• Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic
protection circuit.
• SII Semiconductor Corporation claims no responsibility for any and all disputes arising out of or in connection with any
infringement by products including this IC of patents owned by a third party.
25
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series
Rev.6.5_02
Characteristics (Typical Data)
1. Current consumption
1. 1 IOPE vs. Ta
1. 2 IPDN vs. Ta
0.16
6
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
5
4
3
2
1
0
−40 −25
0
25
Ta [°C]
50
7585
−40−25
0
25
Ta [°C]
50
7585
1. 3 IOPE vs. VDD
6
5
4
3
2
1
0
0
4
8
2
6
VDD [V]
2. Overcharge detection / release voltage, overdischarge detection / release voltage, overcurrent
detection voltage, and delay time
2. 1 VCU vs. Ta
2. 2 VCL vs. Ta
4.350
4.345
4.340
4.335
4.330
4.325
4.320
4.315
4.125
4.115
4.105
4.095
4.085
4.075
4.065
4.055
4.045
4.035
4.025
4.310
4.305
4.300
−40−25
0
25
Ta [°C]
50
7585
0
−40−25
25
Ta [°C]
50
7585
2. 3 VDU vs. Ta
2.95
2. 4 VDL vs. Ta
2.60
2.58
2.56
2.54
2.52
2.50
2.48
2.46
2.44
2.42
2.40
2.94
2.93
2.92
2.91
2.90
2.89
2.88
2.87
2.86
2.85
−40 −25
0
25
50
7585
−40 −25
0
25
Ta [°C]
50
7585
Ta [°C]
26
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series
Rev.6.5_02
2. 5 tCU vs. Ta
2. 6 tDL vs. Ta
1.50
1.45
1.40
1.35
200
190
180
170
1.30
160
1.25
150
1.20
1.15
1.10
140
130
120
1.05
110
1.00
100
−40 −25
0
25
50
7585
−40 −25
0
25
Ta [°C]
50
7585
Ta [°C]
2. 7 VDIOV vs. Ta
2. 8 tDIOV vs. VDD
14
13
12
11
10
9
0.175
0.170
0.165
0.160
0.155
0.150
0.145
0.140
8
7
0.135
0.130
0.125
6
5
4
−40−25
0
25
Ta [°C]
50
7585
7585
4.5
3.0
3.5
4.0
4.5
VDD [V]
2. 9 tDIOV vs. Ta
2. 10 VSHORT vs. Ta
0.75
0.70
0.65
0.60
14
13
12
11
10
9
0.55
0.50
8
0.45
0.40
0.35
7
6
5
0.30
4
0.25
−40−25
0
25
Ta [°C]
50
−40−25
0
25
50
7585
Ta [°C]
2. 11 tSHORT vs. VDD
2. 12 tSHORT vs. Ta
0.65
0.63
0.61
0.59
1.0
0.9
0.8
0.7
0.57
0.6
0.55
0.5
0.53
0.51
0.49
0.4
0.3
0.2
0.47
0.45
3.0
0.1
0
−40−25
0
25
50
7585
3.5
4.0
Ta [°C]
VDD [V]
27
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series
Rev.6.5_02
3. CO pin / DO pin
3. 1 ICOH vs. VCO
3. 2 ICOL vs. VCO
0
0.5
0.4
0.3
0.2
0.1
0
−0.1
−0.2
−0.3
−0.4
−0.5
0
1
2
3
4
0
1
2
3
4
VCO [V]
VCO [V]
3. 3 IDOH vs. VDO
3. 4 IDOL vs. VDO
0
0.20
−0.05
−0.10
−0.15
−0.20
−0.25
0.15
0.10
0.05
−0.30
0
0
0.5
1.0
VDO [V]
1.5
0
1
2
3
4
V
DO [V]
28
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series
Rev.6.5_02
Marking Specifications
1. SOT-23-5
Top view
(1) to (3):
(4):
Product code (refer to Product name vs. Product code)
Lot number
5
4
(1) (2) (3) (4)
1
2
3
Product name vs. Product code
Product Code
(2)
Product Name
(1)
(3)
D
E
H
I
S-8211DAD-M5T1x
S-8211DAE-M5T1x
S-8211DAH-M5T1x
S-8211DAI-M5T1x
S-8211DAJ-M5T1x
S-8211DAK-M5T1x
S-8211DAL-M5T1x
S-8211DAM-M5T1x
S-8211DAR-M5T1x
S-8211DAS-M5T1x
S-8211DAU-M5T1y
S-8211DAV-M5T1y
S-8211DAW-M5T1y
S-8211DBB-M5T1U
S-8211DBD-M5T1U
S-8211DBE-M5T1U
S-8211DBF-M5T1U
S-8211DBG-M5T1U
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
2
2
2
2
2
2
2
2
2
2
2
2
2
9
9
9
9
9
J
K
L
M
R
S
U
V
W
B
D
E
F
G
Remark 1. x: G or U
y: S or U
2. Please select products of environmental code = U for Sn 100%, halogen-free products.
29
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211D Series
Rev.6.5_02
2. SNT-6A
Top view
(1) to (3):
(4) to (6):
Product code (refer to Product name vs. Product code)
Lot number
6
5
4
(1) (2) (3)
(4) (5) (6)
1
2
3
Product name vs. Product code
Product Code
Product Name
(1)
(2)
2
2
2
2
2
2
2
2
2
2
2
9
9
(3)
D
E
F
S-8211DAD-I6T1U
S-8211DAE-I6T1U
S-8211DAF-I6T1U
S-8211DAG-I6T1U
S-8211DAI-I6T1U
S-8211DAN-I6T1U
S-8211DAQ-I6T1U
S-8211DAT-I6T1U
S-8211DAX-I6T1U
S-8211DAY-I6T1U
S-8211DAZ-I6T1U
S-8211DBA-I6T1U
S-8211DBC-I6T1U
R
R
R
R
R
R
R
R
R
R
R
R
R
G
I
N
Q
T
X
Y
Z
A
C
30
2.9±0.2
1.9±0.2
4
5
+0.1
-0.06
1
2
3
0.16
0.95±0.1
0.4±0.1
No. MP005-A-P-SD-1.2
TITLE
SOT235-A-PKG Dimensions
MP005-A-P-SD-1.2
No.
SCALE
UNIT
mm
SII Semiconductor Corporation
4.0±0.1(10 pitches:40.0±0.2)
+0.1
-0
2.0±0.05
0.25±0.1
ø1.5
+0.2
-0
4.0±0.1
ø1.0
1.4±0.2
3.2±0.2
3
4
2 1
5
Feed direction
No. MP005-A-C-SD-2.1
TITLE
SOT235-A-Carrier Tape
MP005-A-C-SD-2.1
No.
SCALE
UNIT
mm
SII Semiconductor Corporation
12.5max.
9.0±0.3
Enlarged drawing in the central part
ø13±0.2
(60°)
(60°)
No. MP005-A-R-SD-1.1
TITLE
SOT235-A-Reel
MP005-A-R-SD-1.1
No.
SCALE
UNIT
QTY.
3,000
mm
SII Semiconductor Corporation
1.57±0.03
6
5
4
+0.05
-0.02
0.08
1
2
3
0.5
0.48±0.02
0.2±0.05
No. PG006-A-P-SD-2.0
SNT-6A-A-PKG Dimensions
PG006-A-P-SD-2.0
TITLE
No.
SCALE
UNIT
mm
SII Semiconductor Corporation
+0.1
-0
ø1.5
4.0±0.1
2.0±0.05
0.25±0.05
+0.1
ø0.5
-0
4.0±0.1
0.65±0.05
1.85±0.05
5°
3
2
5
1
6
4
Feed direction
No. PG006-A-C-SD-1.0
TITLE
SNT-6A-A-Carrier Tape
PG006-A-C-SD-1.0
No.
SCALE
UNIT
mm
SII Semiconductor Corporation
12.5max.
9.0±0.3
Enlarged drawing in the central part
ø13±0.2
(60°)
(60°)
No. PG006-A-R-SD-1.0
SNT-6A-A-Reel
TITLE
PG006-A-R-SD-1.0
No.
SCALE
UNIT
QTY.
5,000
SII Semiconductor Corporation
0.52
2
1.36
0.52
1
0.3
0.2
1.
2.
(0.25 mm min. / 0.30 mm typ.)
(1.30 mm ~ 1.40 mm)
0.03 mm
SNT
1. Pay attention to the land pattern width (0.25 mm min. / 0.30 mm typ.).
2. Do not widen the land pattern to the center of the package ( 1.30 mm ~ 1.40 mm ).
Caution 1. Do not do silkscreen printing and solder printing under the mold resin of the package.
2. The thickness of the solder resist on the wire pattern under the package should be 0.03 mm
or less from the land pattern surface.
3. Match the mask aperture size and aperture position with the land pattern.
4. Refer to "SNT Package User's Guide" for details.
(0.25 mm min. / 0.30 mm typ.)
(1.30 mm ~ 1.40 mm)
1.
2.
SNT-6A-A
-Land Recommendation
TITLE
No. PG006-A-L-SD-4.1
No.
PG006-A-L-SD-4.1
SCALE
UNIT
mm
SII Semiconductor Corporation
Disclaimers (Handling Precautions)
1. All the information described herein (product data, specifications, figures, tables, programs, algorithms and
application circuit examples, etc.) is current as of publishing date of this document and is subject to change without
notice.
2. The circuit examples and the usages described herein are for reference only, and do not guarantee the success of
any specific mass-production design.
SII Semiconductor Corporation is not responsible for damages caused by the reasons other than the products or
infringement of third-party intellectual property rights and any other rights due to the use of the information described
herein.
3. SII Semiconductor Corporation is not responsible for damages caused by the incorrect information described herein.
4. Take care to use the products described herein within their specified ranges. Pay special attention to the absolute
maximum ratings, operation voltage range and electrical characteristics, etc.
SII Semiconductor Corporation is not responsible for damages caused by failures and/or accidents, etc. that occur
due to the use of products outside their specified ranges.
5. When using the products described herein, confirm their applications, and the laws and regulations of the region or
country where they are used and verify suitability, safety and other factors for the intended use.
6. When exporting the products described herein, comply with the Foreign Exchange and Foreign Trade Act and all
other export-related laws, and follow the required procedures.
7. The products described herein must not be used or provided (exported) for the purposes of the development of
weapons of mass destruction or military use. SII Semiconductor Corporation is not responsible for any provision
(export) to those whose purpose is to develop, manufacture, use or store nuclear, biological or chemical weapons,
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human body, human life, or assets (such as medical equipment, disaster prevention systems, security systems,
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aviation equipment, aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle
use or other uses. Do not use those products without the prior written permission of SII Semiconductor Corporation.
Especially, the products described herein cannot be used for life support devices, devices implanted in the human
body and devices that directly affect human life, etc.
Prior consultation with our sales office is required when considering the above uses.
SII Semiconductor Corporation is not responsible for damages caused by unauthorized or unspecified use of our
products.
9. Semiconductor products may fail or malfunction with some probability.
The user of these products should therefore take responsibility to give thorough consideration to safety design
including redundancy, fire spread prevention measures, and malfunction prevention to prevent accidents causing
injury or death, fires and social damage, etc. that may ensue from the products' failure or malfunction.
The entire system must be sufficiently evaluated and applied on customer's own responsibility.
10. The products described herein are not designed to be radiation-proof. The necessary radiation measures should be
taken in the product design by the customer depending on the intended use.
11. The products described herein do not affect human health under normal use. However, they contain chemical
substances and heavy metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips
may be sharp. Take care when handling these with the bare hands to prevent injuries, etc.
12. When disposing of the products described herein, comply with the laws and ordinances of the country or region where
they are used.
13. The information described herein contains copyright information and know-how of SII Semiconductor Corporation.
The information described herein does not convey any license under any intellectual property rights or any other
rights belonging to SII Semiconductor Corporation or a third party. Reproduction or copying of the information
described herein for the purpose of disclosing it to a third-party without the express permission of SII Semiconductor
Corporation is strictly prohibited.
14. For more details on the information described herein, contact our sales office.
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