S-8239AAH-M6T1U [SII]
OVERCURRENT MONITORING IC;
| 型号： | S-8239AAH-M6T1U |
| 厂家： | 
SEIKO INSTRUMENTS INC |
| 描述： | OVERCURRENT MONITORING IC 监视器 |
| 文件： | 总30页 (文件大小：2063K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S-8239A Series
OVERCURRENT MONITORING IC
FOR MULTI-SERIAL-CELL PACK
www.sii-ic.com
© SII Semiconductor Corporation, 2013-2016
Rev.1.4_03
The S-8239A Series is an overcurrent monitoring IC for multi-serial-cell pack including high-accuracy voltage detection
circuits and delay circuits.
The S-8239A Series is suitable for protection of lithium-ion / lithium polymer rechargeable battery packs from overcurrent.
Features
• Built-in high-accuracy voltage detection circuit
Overcurrent 1 detection voltage*1
Overcurrent 2 detection voltage
Overcurrent 3 detection voltage
0.04 V to 0.30 V (10 mV step)
0.1 V to 0.7 V (100 mV step)
1.2 V (Fixed)
Accuracy 15 mV
Accuracy 100 mV
Accuracy 300 mV
• Built-in three-step overcurrent detection circuit: Overcurrent 1, overcurrent 2, overcurrent 3
• Overcurrent 3 detection function is selectable: Available, unavailable
• UVLO (under voltage lock out) function
UVLO detection voltage
2.0 V (Fixed)
Accuracy 100 mV
• High-withstand voltage:
VM pin, DO pin: Absolute maximum rating 28 V
• Delay times are generated only by an internal circuit (External capacitors are unnecessary).
• Low current consumption
During normal operation:
7.0 μA max.
During UVLO operation:
6.0 μA max.
• Output logic:
Active "L", Active "H"
• Wide operation temperature range:
• Lead-free (Sn 100%), halogen-free
Ta = −40°C to +85°C
*1. Overcurrent 1 detection voltage ≤ 0.06 V should be satisfied in the case of overcurrent 2 detection voltage = 0.1 V.
Overcurrent 1 detection voltage ≤ 0.85 × overcurrent 2 detection voltage − 0.05 V should be satisfied in the case of
overcurrent 2 detection voltage ≥ 0.2 V.
Applications
• Lithium-ion rechargeable battery pack
• Lithium polymer rechargeable battery pack
Package
• SOT-23-6
1
OVERCURRENT MONITORING IC FOR MULTI-SERIAL-CELL PACK
S-8239A Series
Rev.1.4_03
Block Diagram
DP
DO
+
−
VDD
Delay circuit
output control circuit
UVLO detection
comparator
+
−
VM
Overcurrent latch
comparator
RVMS
+
−
Overcurrent 1
detection comparator
+
VINI
−
Overcurrent 2
detection comparator
+
−
Overcurrent 3
detection comparator
VSS
Remark All the diodes shown in the figure are parasitic diodes.
Figure 1
2
OVERCURRENT MONITORING IC FOR MULTI-SERIAL-CELL PACK
S-8239A Series
Rev.1.4_03
Product Name Structure
1. Product name
S-8239A xx
-
M6T1
U
Environmental code
U: Lead-free (Sn 100%), halogen-free
Package abbreviation and IC packing specifications*1
M6T1: SOT-23-6, Tape
Serial code*2
Sequentially set from AA to ZZ
*1. Refer to the tape drawing.
*2. Refer to "3. Product name list".
2. Package
Table 1 Package Drawing Codes
Package Name
SOT-23-6
Dimension
Tape
Reel
MP006-A-P-SD
MP006-A-C-SD
MP006-A-R-SD
3. Product name list
Table 2
Overcurrent 1
Detection
Voltage
Overcurrent 2
Detection
Voltage
Overcurrent 1
Detection
Delay Time
Overcurrent 2
Detection
Delay Time
Overcurrent 3
Detection
Function
Product Name
Output Logic
[VDIOV1
]
[VDIOV2
]
[tDIOV1
]
[tDIOV2]
S-8239AAA-M6T1U
S-8239AAB-M6T1U
S-8239AAC-M6T1U
S-8239AAD-M6T1U
S-8239AAE-M6T1U
S-8239AAF-M6T1U
S-8239AAG-M6T1U
S-8239AAH-M6T1U
S-8239AAI-M6T1U
S-8239AAJ-M6T1U
S-8239AAK-M6T1U
0.08 V
0.10 V
0.10 V
0.10 V
0.10 V
0.04 V
0.10 V
0.06 V
0.10 V
0.11 V
0.10 V
0.4 V
0.5 V
0.3 V
0.2 V
0.7 V
0.3 V
0.2 V
0.1 V
0.3 V
0.3 V
0.3 V
1150 ms
1150 ms
18.0 ms
290 ms
18.0 ms
4600 ms
1150 ms
290 ms
290 ms
4600 ms
290 ms
1.12 ms
0.28 ms
0.28 ms
0.56 ms
0.56 ms
0.28 ms
1.12 ms
0.56 ms
0.28 ms
2.24 ms
1.12 ms
Unavailable
Unavailable
Unavailable
Unavailable
Unavailable
Unavailable
Available
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Unavailable
Unavailable
Available
Active "L"
Active "H"
Available
Remark Contact our sales office for the products with detection voltage value other than those specified above.
3
OVERCURRENT MONITORING IC FOR MULTI-SERIAL-CELL PACK
S-8239A Series
Rev.1.4_03
Pin Configuration
1. SOT-23-6
Table 3
Top view
Pin No.
1
Symbol
VINI
Description
6
5
4
Voltage detection pin between VINI pin and VSS pin
(Overcurrent detection pin)
2
3
4
5
6
VM
Overcurrent latch pin
DO
Connection pin of discharge control FET gate
Test pin for delay time measurement
Input pin for positive power supply
Input pin for negative power supply
1
2
3
DP*1
VDD
VSS
Figure 2
*1. The DP pin should be open.
4
OVERCURRENT MONITORING IC FOR MULTI-SERIAL-CELL PACK
S-8239A Series
Rev.1.4_03
Absolute Maximum Ratings
Table 4
Symbol
(Ta = +25°C unless otherwise specified)
Item
Applied pin
Absolute Maximum Rating
VSS − 0.3 to VSS +12
VDD − 28 to VDD + 0.3
VSS − 0.3 to VSS + 12
VSS − 0.3 to VSS + 28
650*1
Unit
V
Input voltage between VDD pin and VSS pin VDS
VDD
VM
VINI
DO
−
VM pin input voltage
VINI pin input voltage
DO pin output voltage
Power dissipation
VVM
VVINI
VDO
PD
V
V
V
mW
°C
°C
Operation ambient temperature
Storage temperature
Topr
Tstg
−
−
−40 to +85
−55 to +125
*1. When mounted on board
[Mounted board]
(1) Board size:
114.3 mm × 76.2 mm × t1.6 mm
(2) Board name:
JEDEC STANDARD51-7
Caution 1. The DP pin should be open.
2. The absolute maximum ratings are rated values exceeding which the product could suffer physical
damage. These values must therefore not be exceeded under any conditions.
700
600
500
400
300
200
100
0
100
150
50
0
Ambient temperature (Ta) [°C]
Figure 3 Power Dissipation of Package (When Mounted on Board)
5
OVERCURRENT MONITORING IC FOR MULTI-SERIAL-CELL PACK
S-8239A Series
Rev.1.4_03
Electrical Characteristics
1. Ta = +25°C
Table 5
(Ta = +25°C unless otherwise specified)
Test
Condition Circuit
Test
Item
Symbol
Condition
Min.
Typ. Max. Unit
Detection Voltage
VDIOV1
− 0.015
VDIOV2
VDIOV1
+ 0.015
VDIOV2
Overcurrent 1 detection voltage VDIOV1
Overcurrent 2 detection voltage*1 VDIOV2
Overcurrent 3 detection voltage VDIOV3
VDIOV1
V
V
1
1
1
1
−
−
VDIOV2
− 0.100
+ 0.100
Overcurrent 3 detection function
"available"
0.90
1.90
1.20
2.00
1.50
2.10
V
V
1
1
1
1
UVLO detection voltage
Release Voltage
VUVLO
−
Overcurrent release voltage
VRIOV VDD criteria, VDD = 3.5 V
0.7
1.5
1.2
1.5
8
V
V
1
1
Input Voltage, Operation Voltage
Operation voltage between
VDD pin and VSS pin
VDSOP Output logic is determined*2
−
−
−
Current Consumption
Current consumption during
normal operation
Current consumption during
UVLO operation
IOPE
VDD = 3.5 V, VVM = 0 V
VDD = VVM = 1.5 V
1.0
0.7
3.5
3.0
7.0
6.0
2
2
2
2
μA
μA
IUVLO
Internal Resistance
Internal resistance between
VM pin and VSS pin
Output Resistance (Active "L")
DO pin resistance "L"
RVMS
RDOL
RDOL
VDD = VVM = 3.5 V
210
2.5
2.5
300
5
390
10
3
4
4
3
4
4
kΩ
kΩ
kΩ
VDD = VVINI = 3.5 V, VDO = 0.5 V
Output Resistance (Active "H")
V
V
DD = 3.5 V, VVINI = 0 V
DO = 0.5 V
DO pin resistance "L"
5
10
Delay Time
tDIOV1
× 0.6
tDIOV2
× 0.6
tDIOV1
× 1.4
tDIOV2
× 1.4
Overcurrent 1 detection delay
time
tDlOV1
tDlOV2
−
−
tDIOV1
tDIOV2
ms
ms
5
5
5
5
Overcurrent 2 detection delay
time
Overcurrent 3 detection delay
time
Overcurrent 3 detection function
"available"
tDlOV3
tUVLO
168
280
392
μs
5
5
5
5
UVLO detection delay time
−
2.94
4.90
6.86
s
*1. Even if overcurrent 1 detection voltage and overcurrent 2 detection voltage are in the same range, VDIOV1 is lower than
VDIOV2
.
*2. It indicates that DO pin output logic is determined.
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OVERCURRENT MONITORING IC FOR MULTI-SERIAL-CELL PACK
S-8239A Series
Rev.1.4_03
2. Ta = −40°C to +85°C*1
Table 6
Condition
(Ta = −40°C to +85°C*1 unless otherwise specified)
Test
Test
Item
Symbol
Min.
Typ. Max.
Unit
Condition Circuit
Detection Voltage
VDIOV1
− 0.021
VDIOV2
VDIOV1
+ 0.021
VDIOV2
Overcurrent 1 detection voltage VDIOV1
Overcurrent 2 detection voltage*2 VDIOV2
Overcurrent 3 detection voltage VDIOV3
VDIOV1
V
V
1
1
1
1
−
−
VDIOV2
− 0.130
+ 0.130
Overcurrent 3 detection function
"available"
0.70
1.85
1.20
2.00
1.70
2.15
V
V
1
1
1
1
UVLO detection voltage
Release Voltage
VUVLO
−
Overcurrent release voltage
VRIOV
VDD criteria, VDD = 3.5 V
0.5
1.5
1.2
1.7
8
V
V
1
1
Input Voltage, Operation Voltage
Operation voltage between
VDD pin and VSS pin
VDSOP
Output logic is determined*3
−
−
−
Current Consumption
Current consumption during
normal operation
Current consumption during
UVLO operation
IOPE
VDD = 3.5 V, VVM = 0 V
VDD = VVM = 1.5 V
0.7
0.5
3.5
3.0
8.0
7.0
2
2
2
2
μA
μA
IUVLO
Internal Resistance
Internal resistance between
VM pin and VSS pin
Output Resistance (Active "L")
DO pin resistance "L"
RVMS
RDOL
RDOL
VDD = VVM = 3.5 V
150
1.2
1.2
300
5
450
15
3
4
4
3
4
4
kΩ
kΩ
kΩ
VDD = VVINI = 3.5 V, VDO = 0.5 V
Output Resistance (Active "H")
V
V
DD = 3.5 V, VVINI = 0 V
DO = 0.5 V
DO pin resistance "L"
5
15
Delay Time
tDIOV1
× 0.2
tDIOV2
× 0.2
tDIOV1
× 1.8
tDIOV2
× 1.8
Overcurrent 1 detection delay
time
tDlOV1
tDlOV2
−
−
tDIOV1
tDIOV2
ms
ms
5
5
5
5
Overcurrent 2 detection delay
time
Overcurrent 3 detection delay
time
Overcurrent 3 detection function
"available"
tDlOV3
tUVLO
56
280
504
μs
5
5
5
5
UVLO detection delay time
−
0.98
4.90
8.82
s
*1. Since products are not screened at high and low temperatures, the specification for this temperature range is
guaranteed by design, not tested in production.
*2. Even if overcurrent 1 detection voltage and overcurrent 2 detection voltage are in the same range, VDIOV1 is lower than
VDIOV2
.
*3. It indicates that DO pin output logic is determined.
7
OVERCURRENT MONITORING IC FOR MULTI-SERIAL-CELL PACK
S-8239A Series
Rev.1.4_03
Test Circuits
Caution Unless otherwise specified, the output voltage levels "H" and "L" at the DO pin (VDO) are judged by
the threshold voltage (1.0 V) of the N-channel FET. Judge the DO pin level with respect to VSS
.
1. Overcurrent 1 detection voltage, overcurrent 2 detection voltage, overcurrent release voltage,
UVLO detection voltage
(Test condition 1, test circuit 1)
1. 1 Active "L"
The overcurrent 1 detection voltage (VDIOV1) is defined as the voltage V2 whose delay time for changing VDO from
"H" to "L" lies between the minimum and the maximum value of the overcurrent 1 detection delay time after the
voltage V2 is increased instantaneously (within 10 μs) from the set conditions of V1 = V3 = 3.5 V, V2 = 0 V.
The overcurrent 2 detection voltage (VDIOV2) is defined as the voltage V2 whose delay time for changing VDO from
"H" to "L" lies between the minimum and the maximum value of the overcurrent 2 detection delay time after the
voltage V2 is increased instantaneously (within 10 μs) from the set conditions of V1 = V3 = 3.5 V, V2 = 0 V.
The overcurrent release voltage (VRIOV) is defined as the voltage V3 at which VDO goes from "L" to "H" after
decreasing V2 to 0 V and the voltage V3 is increased gradually from the set conditions of V1 = V2 = 3.5 V, V3 =
0 V.
The UVLO detection voltage (VUVLO) is defined as the voltage V1 at which VDO goes from "H" to "L" after the
voltages V1 and V3 are decreased gradually from the set conditions of V1 = V3 = 3.5 V, V2 = 0 V.
1. 2 Active "H"
The overcurrent 1 detection voltage (VDIOV1) is defined as the voltage V2 whose delay time for changing VDO from
"L" to "H" lies between the minimum and the maximum value of the overcurrent 1 detection delay time after the
voltage V2 is increased instantaneously (within 10 μs) from the set conditions of V1 = V3 = 3.5 V, V2 = 0 V.
The overcurrent 2 detection voltage (VDIOV2) is defined as the voltage V2 whose delay time for changing VDO from
"L" to "H" lies between the minimum and the maximum value of the overcurrent 2 detection delay time after the
voltage V2 is increased instantaneously (within 10 μs) from the set conditions of V1 = V3 = 3.5 V, V2 = 0 V.
The overcurrent release voltage (VRIOV) is defined as the voltage V3 at which VDO goes from "H" to "L" after
decreasing V2 to 0 V and the voltage V3 is increased gradually from the set conditions of V1 = V2 = 3.5 V, V3 =
0 V.
The UVLO detection voltage (VUVLO) is defined as the voltage V1 at which VDO goes from "L" to "H" after the
voltages V1 and V3 are decreased gradually from the set conditions of V1 = V3 = 3.5 V, V2 = 0 V.
2. Overcurrent 3 detection voltage (Overcurrent 3 detection function "available")
(Test condition 1, test circuit 1)
2. 1 Active "L"
The overcurrent 3 detection voltage (VDIOV3) is defined as the voltage V2 whose delay time for changing VDO from
"H" to "L" lies between the minimum and the maximum value of the overcurrent 3 detection delay time after the
voltage V2 is increased instantaneously (within 10 μs) from the set conditions of V1 = V3 = 3.5 V, V2 = 0 V.
2. 2 Active "H"
The overcurrent 3 detection voltage (VDIOV3) is defined as the voltage V2 whose delay time for changing VDO from
"L" to "H" lies between the minimum and the maximum value of the overcurrent 3 detection delay time after the
voltage V2 is increased instantaneously (within 10 μs) from the set conditions of V1 = V3 = 3.5 V, V2 = 0 V.
3. Current consumption during normal operation, current consumption during UVLO operation
(Test condition 2, test circuit 2)
The current consumption during normal operation (IOPE) is the current that flows through the VDD pin (IDD) under the
set conditions of V1 = 3.5 V, V2 = 0 V.
The current consumption during UVLO operation (IUVLO) is IDD under the set conditions of V1 = V2 = 1.5 V.
4. Internal resistance between VM pin and VSS pin
(Test condition 3, test circuit 3)
The internal resistance between the VM pin and the VSS pin (RVMS) is the resistance between the VM pin and the
VSS pin under the set condition of V1 = V2 = V3 = 3.5 V.
8
OVERCURRENT MONITORING IC FOR MULTI-SERIAL-CELL PACK
S-8239A Series
Rev.1.4_03
5. DO pin resistance "L"
(Test condition 4, test circuit 4)
5. 1 Active "L"
The DO pin resistance "L" (RDOL) is the DO pin resistance under the set conditions of V1 = V2 = 3.5 V, V3 = 0.5 V.
5. 2 Active "H"
The DO pin resistance "L" (RDOL) is the DO pin resistance under the set conditions of V1 = 3.5 V, V2 = 0 V, V3 =
0.5 V.
6. Overcurrent 1 detection delay time
(Test condition 5, test circuit 5)
6. 1 Active "L"
6. 1. 1 VDIOV2 = 0.1 V
The overcurrent 1 detection delay time (tDIOV1) is the time period from when the voltage V2 exceeds VDIOV1 to
when VDO goes to "L", after V2 is increased to 0.08V instantaneously (within 10 μs) under the set conditions of
V1 = 3.5 V, V2 = 0 V.
6. 1. 2 VDIOV2 ≥ 0.2 V
The overcurrent 1 detection delay time (tDIOV1) is the time period from when the voltage V2 exceeds VDIOV1 to
when VDO goes to "L", after V2 is increased to VDIOV1 max. + 0.01 V instantaneously (within 10 μs) under the set
conditions of V1 = 3.5 V, V2 = 0 V.
6. 2 Active "H"
6. 2. 1 VDIOV2 = 0.1 V
The overcurrent 1 detection delay time (tDIOV1) is the time period from when the voltage V2 exceeds VDIOV1 to
when VDO goes to "H", after V2 is increased to 0.08V instantaneously (within 10 μs) under the set conditions of
V1 = 3.5 V, V2 = 0 V.
6. 2. 2 VDIOV2 ≥ 0.2 V
The overcurrent 1 detection delay time (tDIOV1) is the time period from when the voltage V2 exceeds VDIOV1 to
when VDO goes to "H", after V2 is increased to VDIOV1 max. + 0.01 V instantaneously (within 10 μs) under the set
conditions of V1 = 3.5 V, V2 = 0 V.
7. Overcurrent 2 detection delay time, UVLO detection delay time
(Test condition 5, test circuit 5)
7. 1 Active "L"
The overcurrent 2 detection delay time (tDIOV2) is the time period from when the voltage V2 exceeds VDIOV2 to when
VDO goes to "L", after V2 is increased to 0.9 V instantaneously (within 10 μs) under the set conditions of V1 = 3.5 V,
V2 = 0 V.
The UVLO detection delay time (tUVLO) is the time period from when the voltage V1 falls below VUVLO to when VDO
goes to "L", after V1 is decreased to 1.8 V instantaneously (within 10 μs) under the set conditions of V1 = 3.5 V, V2
= 0 V.
7. 2 Active "H"
The overcurrent 2 detection delay time (tDIOV2) is the time period from when the voltage V2 exceeds VDIOV2 to when
VDO goes to "H", after V2 is increased to 0.9 V instantaneously (within 10 μs) under the set conditions of V1 = 3.5
V, V2 = 0 V.
The UVLO detection delay time (tUVLO) is the time period from when the voltage V1 falls below VUVLO to when VDO
goes to "H", after V1 is decreased to 1.8 V instantaneously (within 10 μs) under the set conditions of V1 = 3.5 V, V2
= 0 V.
9
OVERCURRENT MONITORING IC FOR MULTI-SERIAL-CELL PACK
S-8239A Series
Rev.1.4_03
8. Overcurrent 3 detection delay time (Overcurrent 3 detection function "available")
(Test condition 5, test circuit 5)
8. 1 Active "L"
The overcurrent 3 detection delay time (tDIOV3) is the time period from when the voltage V2 exceeds VDIOV3 to when
VDO goes to "L", after V2 is increased to 1.6 V instantaneously (within 10 μs) under the set conditions of V1 = 3.5 V,
V2 = 0 V.
8. 2 Active "H"
The overcurrent 3 detection delay time (tDIOV3) is the time period from when the voltage V2 exceeds VDIOV3 to when
VDO goes to "H", after V2 is increased to 1.6 V instantaneously (within 10 μs) under the set conditions of V1 =
3.5 V, V2 = 0 V.
10
OVERCURRENT MONITORING IC FOR MULTI-SERIAL-CELL PACK
S-8239A Series
Rev.1.4_03
IDD
DP
VM
VDD
VSS
A
DP
VM
VDD
VSS
V1
V1
S-8239A Series
S-8239A Series
V3
DO
VINI
DO
VINI
100 kΩ
V2
V
VDO
V2
COM
COM
Figure 5 Test Circuit 2
Figure 4 Test Circuit 1
DP
VM
VDD
DP
VM
VDD
VSS
V1
S-8239A Series
VSS
S-8239A Series
V1
VINI
DO
DO
VINI
A
IVM
V3
A
IDO
V3
V2
V2
COM
COM
Figure 7 Test Circuit 4
Figure 6 Test Circuit 3
DP
VDD
VSS
V1
S-8239A Series
VM
DO
VINI
100 kΩ
V2
Oscilloscope
Figure 8 Test Circuit 5
COM
11
OVERCURRENT MONITORING IC FOR MULTI-SERIAL-CELL PACK
S-8239A Series
Rev.1.4_03
Operation
1. Normal status
The S-8239A Series monitors the voltage between the VINI pin and the VSS pin to control discharging. When the
VINI pin voltage is equal to or lower than the overcurrent 1 detection voltage (VDIOV1), the DO pin becomes "High-Z"
(Active "L") or VSS potential (Active "H"). This status is called the normal status.
Caution When a battery is connected for the first time, the S-8239A Series may not be in the normal status.
In this case, short the VM pin and VSS pin or connect the charger. The S-8239A Series then
becomes the normal status.
2. Overcurrent status (Overcurrent 1, overcurrent 2, overcurrent 3)
When a battery is in the normal status, if the VINI pin voltage is equal to or higher than the overcurrent detection
voltage because the discharge current is equal to or higher than the specified value and the status continues for the
overcurrent detection delay time or longer, the DO pin becomes VSS potential (Active "L") or "High-Z" (Active "H").
This status is called the overcurrent status. The overcurrent status is retained when the voltage between the VDD pin
and the VM pin is equal to or lower than the overcurrent release voltage (VRIOV).
In the overcurrent status, the VM pin and VSS pin are shorted by the internal resistor between the VM pin and the
VSS pin (RVMS) in the S-8239A Series. However, the VM pin is at VDD potential due to the external load as long as the
external load is connected. When the external load is disconnected completely, the VM pin returns to VSS potential.
The overcurrent status is released when the voltage between the VDD pin and the VM pin is equal to or higher than
VRIOV
.
3. UVLO status
The S-8239A Series includes a UVLO (under voltage lock out) function to prevent the IC malfunction due to the
decrease of the battery voltage when detecting the overcurrent. When the battery voltage in the normal status is
equal to or lower than the UVLO detection voltage (VUVLO) and the status continues for the UVLO detection delay time
(tUVLO) or longer, the DO pin becomes VSS potential (Active "L") or "High-Z" (Active "H"). This status is called the
UVLO status.
In the UVLO status, the VM pin and VSS pin are shorted by RVMS between the VM pin and the VSS pin in the
S-8239A Series.
After that, the UVLO status is released if the battery voltage becomes equal to or higher than VUVLO
.
12
OVERCURRENT MONITORING IC FOR MULTI-SERIAL-CELL PACK
S-8239A Series
Rev.1.4_03
4. Delay circuit
The detection delay times are determined by dividing a clock of approximately 3.5 kHz with the counter.
Remark The overcurrent 2 detection delay time (tDIOV2) starts when the overcurrent 1 detection voltage (VDIOV1) is
detected. When the overcurrent 2 detection voltage (VDIOV2) is detected over tDIOV2 after the detection of
VDIOV1, the S-8239A Series becomes the overcurrent status within tDIOV2 from the time of detecting VDIOV2
.
DO pin
High-Z
0 ≤ tD ≤ tDIOV2
VSS
Time
tDIOV2
tD
VDIOV2
VINI pin
VDIOV1
VSS
Time
Figure 9
5. DP pin
The DP pin is a test pin for delay time measurement and it should be open in the actual application.
If a capacitor whose capacitance is 1000 pF or more or a resistor whose resistance is 1 MΩ or less is connected to
this pin, error may occur in the delay times or in the detection voltages.
13
OVERCURRENT MONITORING IC FOR MULTI-SERIAL-CELL PACK
S-8239A Series
Rev.1.4_03
Timing Charts
1. Overcurrent detection
1. 1 Active "L"
1. 1. 1 Overcurrent 3 detection function "available"
VDIOV3
VDIOV2
VDIOV1
VSS
VINI pin
VDD
VRIOV
VM pin
VSS
High-Z
High-Z
High-Z
High-Z
DO pin
VSS
External load connection
Overcurrent 1 detection
delay time (tDIOV1
Overcurrent 2 detection
Overcurrent 3 detection
)
delay time (tDIOV2
)
delay time (tDIOV3
)
Status*1
(1)
(2)
(1)
(2)
(1) (2)
(1)
*1. (1): Normal status
(2): Overcurrent status
Figure 10
14
OVERCURRENT MONITORING IC FOR MULTI-SERIAL-CELL PACK
S-8239A Series
Rev.1.4_03
1. 1. 2 Overcurrent 3 detection function "unavailable"
VDIOV2
VINI pin
VDIOV1
VSS
VDD
VRIOV
VM pin
VSS
High-Z
High-Z
High-Z
DO pin
VSS
External load connection
Overcurrent 2 detection delay time (tDIOV2
)
Overcurrent 1 detection delay time (tDIOV1
)
Status*1
(1)
(1)
(2)
(1)
(2)
*1. (1): Normal status
(2): Overcurrent status
Figure 11
15
OVERCURRENT MONITORING IC FOR MULTI-SERIAL-CELL PACK
S-8239A Series
Rev.1.4_03
1. 2 Active "H"
1. 2. 1 Overcurrent 3 detection function "available"
VDIOV3
VDIOV2
VDIOV1
VSS
VINI pin
VDD
VRIOV
VM pin
VSS
High-Z
High-Z
DO pin
High-Z
VSS
External load connection
Overcurrent 1 detection delay time (tDIOV1
)
Overcurrent 2 detection delay time (tDIOV2
)
Overcurrent 3 detection delay time (tDIOV3)
Status*1
(1)
(2)
(1)
(2)
(1)
(2)
(1)
*1. (1): Normal status
(2): Overcurrent status
Figure 12
16
OVERCURRENT MONITORING IC FOR MULTI-SERIAL-CELL PACK
S-8239A Series
Rev.1.4_03
1. 2. 2 Overcurrent 3 detection function "unavailable"
VDIOV2
VINI pin
VDIOV1
VSS
VDD
VRIOV
VM pin
VSS
High-Z
High-Z
DO pin
VSS
External load connection
Overcurrent 1 detection delay time (tDIOV1
)
Overcurrent 2 detection delay time (tDIOV2
)
Status*1
(1)
(2)
(1)
(2)
(1)
*1. (1): Normal status
(2): Overcurrent status
Figure 13
17
OVERCURRENT MONITORING IC FOR MULTI-SERIAL-CELL PACK
S-8239A Series
Rev.1.4_03
2. UVLO detection
2. 1 Active "L"
VUVLO
Battery voltage
VDD
VM pin
VSS
High-Z
DO pin
High-Z
VSS
Charger connection
External load connection
UVLO detection delay time (tUVLO
)
Status*1
(1)
(2)
(1)
*1. (1): Normal status
(2): UVLO status
Remark The charger is assumed to charge with a constant current.
Figure 14
18
OVERCURRENT MONITORING IC FOR MULTI-SERIAL-CELL PACK
S-8239A Series
Rev.1.4_03
2. 2 Active "H"
VUVLO
Battery voltage
VDD
VM pin
VSS
DO pin
High-Z
VSS
Charger connection
External load connection
UVLO detection delay time (tUVLO
)
Status*1
(1)
(2)
(1)
*1. (1): Normal status
(2): UVLO status
Remark The charger is assumed to charge with a constant current.
Figure 15
19
OVERCURRENT MONITORING IC FOR MULTI-SERIAL-CELL PACK
S-8239A Series
Rev.1.4_03
5-serial-cell Protection Circuit Examples
Figure 16 and Figure 17 show the 5-serial-cell protection circuit examples used by the S-8239A Series and the S-8225A
Series. Contact our sales office when using the circuit other than the following protection circuit examples.
1. Active "L"
EB+
100 Ω
1 MΩ
1 MΩ
FET4
CTLD VDD
0.1 μF 0.1 μF
0.1 μF
100 Ω
1 kΩ
1 kΩ
1 kΩ
1 kΩ
1 kΩ
1 kΩ
1 kΩ
1 kΩ
CTLC
CO
VC1
VC2
VC3
FET2*2
FET3
0.1 μF
DO
0.1 μF
S-8225A
Series*1
SEL1
VM
S-8239A
Series
DP
VC4
VC5
VC6
VSS
FET1*2
0.1 μF
1 kΩ
1 kΩ
RVM
RVDD
CVDD
330 kΩ
RDOP
RDO
1 kΩ
SEL2
CDT
CCT
DO
VDD
0.1 μF
VINI
VSS
0.1 μF
0.1 μF 0.1 μF
ZVINI
RSENSE
RVINI
1 MΩ
CHA−
CFET
DFET
DIS−
Figure 16
2. Active "H"
EB+
100 Ω
1 MΩ
FET4
CTLD VDD
0.1 μF 0.1 μF
100 Ω
1 kΩ
1 kΩ
1 kΩ
1 kΩ
1 kΩ
1 kΩ
1 kΩ
1 kΩ
1 MΩ
CTLC
CO
VC1
VC2
VC3
0.1 μF
0.1 μF
0.1 μF
0.1 μF
0.1 μF
0.1 μF
FET2*2
FET3
DO
S-8225A
Series*1
SEL1
RDOP
1 MΩ
VM
DP
S-8239A
Series
VC4
VC5
VC6
VSS
FET1*2
1 kΩ
1 kΩ
RVM
RVDD
330 kΩ
1 kΩ
SEL2
CDT
CCT
DO
VDD
RDO
FET5
CVDD
VINI
VSS
0.1 μF 0.1 μF
RVINI
ZVINI
RSENSE
1 MΩ
CHA−
DFET
CFET
DIS−
Figure 17
20
OVERCURRENT MONITORING IC FOR MULTI-SERIAL-CELL PACK
S-8239A Series
Rev.1.4_03
Table 7 Constants for External Components
Symbol
Min.
300
1
Typ.
470
−
Max.
1000
−
−
51
Unit
Ω
RVDD
RVINI
kΩ
mΩ
kΩ
kΩ
kΩ
μF
RSENSE
RVM
0
−
1
5.1
5.1
510
0.1
*3
RDO
−
330
−
RDOP
CVDD
2000
0.022
1
*1. Refer to the data sheet of the S-8225A Series for the recommended value for external components
of the S-8225A Series.
*2. Use the products with the same model number for FET1 and FET2.
*3. Set up the optimal constant according to the FET in use.
Caution 1. The above constants may be changed without notice.
2. The example of connection shown above and the constants do not guarantee proper operation.
Perform thorough evaluation using the actual application to set the constant.
3. The DP pin should be open.
21
OVERCURRENT MONITORING IC FOR MULTI-SERIAL-CELL PACK
S-8239A Series
Rev.1.4_03
Precautions
•
•
•
The application conditions for the input voltage, output voltage, and load current should not exceed the package power
dissipation.
Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic
protection circuit.
SII Semiconductor Corporation claims no responsibility for any and all disputes arising out of or in connection with any
infringement by products including this IC of patents owned by a third party.
22
OVERCURRENT MONITORING IC FOR MULTI-SERIAL-CELL PACK
S-8239A Series
Rev.1.4_03
Characteristics (Typical Data)
1. Current consumption
1. 1 IOPE vs. Ta
1. 2 IOPE vs. VDD
8
8
6
4
2
0
6
4
2
0
0
−40 −25
0
+25
+50 +75 +85
2
4
6
8
Ta [°C]
V
DD [V]
1. 3 IUVLO vs. Ta
8
6
4
2
0
−40 −25
0
+25
+50 +75 +85
Ta [°C]
2. Overcurrent detection / release voltage, UVLO function and delay times
2. 1 VDIOV1 vs. Ta
2. 2 VDIOV2 vs. Ta
VDIOV1 = 0.08 V
VDIOV2 = 0.4 V
0.10
0.09
0.08
0.07
0.6
0.5
0.4
0.3
0.06
0.2
−40 −25
0
25
50 +75 +85
−40 −25
0
25
50 +75 +85
Ta [°C]
Ta [°C]
2. 3 VDIOV3 vs. Ta
2. 4 VRIOV vs. Ta
1.5
1.4
1.3
1.2
1.1
1.0
1.8
1.5
1.2
0.9
0.9
0.6
−40 −25
0
25
50 +75 +85
−40 −25
0
+25
+50 +75 +85
Ta [°C]
Ta [°C]
23
OVERCURRENT MONITORING IC FOR MULTI-SERIAL-CELL PACK
S-8239A Series
Rev.1.4_03
2. 5 VDIOV1 vs. VDD
2. 6 VDIOV2 vs. VDD
VDIOV1 = 0.08 V
VDIOV2 = 0.4 V
0.10
0.09
0.08
0.07
0.06
0.6
0.5
0.4
0.3
0.2
2
3
4
5
6
7
8
2
3
4
5
6
7
8
V
DD [V]
V
DD [V]
2. 7 VDIOV3 vs. VDD
2. 8 VRIOV vs. VDD
1.5
1.4
1.3
1.2
1.1
1.0
0.9
1.8
1.5
1.2
0.9
0.6
2
3
4
5
6
7
8
2
3
4
5
6
7
8
VDD [V]
VDD [V]
2. 9 tDIOV1 vs. Ta
2. 10 tDIOV2 vs. Ta
t
DIOV1 = 1150 ms
t
DIOV2 = 1.12 ms
1.6
1.4
1.2
1.0
1.6
1.4
1.2
1.0
0.8
0.8
−40 −25
0
+25
+50 +75 +85
−40 −25
0
+25
+50 +75 +85
Ta [°C]
Ta [°C]
2. 11 tDIOV3 vs. Ta
2. 12 tDIOV1 vs. VDD
t
DIOV1 = 1150 ms
400
340
280
220
1.6
1.4
1.2
1.0
0.8
160
−40 −25
0
+25
Ta [°C]
+50 +75 +85
2
3
4
5
6
7
8
V
DD [V]
24
OVERCURRENT MONITORING IC FOR MULTI-SERIAL-CELL PACK
S-8239A Series
Rev.1.4_03
2. 13 tDIOV2 vs. VDD
2. 14 tDIOV3 vs. VDD
t
DIOV2 = 1.12 ms
1.6
1.4
1.2
1.0
0.8
400
340
280
220
160
2
3
4
5
6
7
8
2
3
4
5
6
7
8
V
DD [V]
V
DD [V]
2. 15 VUVLO vs. Ta
2. 16 tUVLO vs. VDD
2.2
2.1
2.0
1.9
6.0
5.5
5.0
4.5
4.0
3.5
3.0
1.8
−40 −25
0
25
50 +75 +85
1.5
1.6
1.7
1.8
1.9
2.0
Ta [°C]
VDD [V]
3. Output Resistance
3. 1 RDOL vs. Ta
10.0
8.0
6.0
4.0
2.0
0.0
40 25
0
25
50 75 85
Ta [C]
25
OVERCURRENT MONITORING IC FOR MULTI-SERIAL-CELL PACK
S-8239A Series
Rev.1.4_03
Marking Specification
1. SOT-23-6
Top view
(1) to (3):
(4):
Product code (Refer to Product name vs. Product code)
6
5
4
Lot number
(1) (2) (3) (4)
1
2
3
Product name vs. Product code
Product Name
Product Code
(1)
(2)
S
S
S
S
S
S
S
S
S
S
S
(3)
A
B
C
D
E
F
S-8239AAA-M6T1U
S-8239AAB-M6T1U
S-8239AAC-M6T1U
S-8239AAD-M6T1U
S-8239AAE-M6T1U
S-8239AAF-M6T1U
S-8239AAG-M6T1U
S-8239AAH-M6T1U
S-8239AAI-M6T1U
S-8239AAJ-M6T1U
S-8239AAK-M6T1U
3
3
3
3
3
3
3
3
3
3
3
G
H
I
J
K
26
2.9±0.2
1.9±0.2
6
5
4
+0.1
-0.05
1
3
2
0.15
0.95
0.95
0.35±0.15
No. MP006-A-P-SD-2.1
TITLE
SOT236-A-PKG Dimensions
MP006-A-P-SD-2.1
No.
ANGLE
UNIT
mm
SII Semiconductor Corporation
4.0±0.1(10 pitches:40.0±0.2)
+0.1
-0
2.0±0.05
0.25±0.1
ø1.5
+0.2
-0
ø1.0
4.0±0.1
1.4±0.2
3.2±0.2
3
4
2 1
6
5
Feed direction
No. MP006-A-C-SD-3.1
TITLE
SOT236-A-Carrier Tape
MP006-A-C-SD-3.1
No.
ANGLE
UNIT
mm
SII Semiconductor Corporation
12.5max.
9.0±0.3
Enlarged drawing in the central part
ø13±0.2
(60°)
(60°)
No. MP006-A-R-SD-2.1
TITLE
SOT236-A-Reel
MP006-A-R-SD-2.1
No.
ANGLE
UNIT
QTY
3,000
mm
SII Semiconductor Corporation
Disclaimers (Handling Precautions)
1. All the information described herein (product data, specifications, figures, tables, programs, algorithms and
application circuit examples, etc.) is current as of publishing date of this document and is subject to change without
notice.
2. The circuit examples and the usages described herein are for reference only, and do not guarantee the success of
any specific mass-production design.
SII Semiconductor Corporation is not responsible for damages caused by the reasons other than the products or
infringement of third-party intellectual property rights and any other rights due to the use of the information described
herein.
3. SII Semiconductor Corporation is not responsible for damages caused by the incorrect information described herein.
4. Take care to use the products described herein within their specified ranges. Pay special attention to the absolute
maximum ratings, operation voltage range and electrical characteristics, etc.
SII Semiconductor Corporation is not responsible for damages caused by failures and/or accidents, etc. that occur
due to the use of products outside their specified ranges.
5. When using the products described herein, confirm their applications, and the laws and regulations of the region or
country where they are used and verify suitability, safety and other factors for the intended use.
6. When exporting the products described herein, comply with the Foreign Exchange and Foreign Trade Act and all
other export-related laws, and follow the required procedures.
7. The products described herein must not be used or provided (exported) for the purposes of the development of
weapons of mass destruction or military use. SII Semiconductor Corporation is not responsible for any provision
(export) to those whose purpose is to develop, manufacture, use or store nuclear, biological or chemical weapons,
missiles, or other military use.
8. The products described herein are not designed to be used as part of any device or equipment that may affect the
human body, human life, or assets (such as medical equipment, disaster prevention systems, security systems,
combustion control systems, infrastructure control systems, vehicle equipment, traffic systems, in-vehicle equipment,
aviation equipment, aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle
use or other uses. Do not use those products without the prior written permission of SII Semiconductor Corporation.
Especially, the products described herein cannot be used for life support devices, devices implanted in the human
body and devices that directly affect human life, etc.
Prior consultation with our sales office is required when considering the above uses.
SII Semiconductor Corporation is not responsible for damages caused by unauthorized or unspecified use of our
products.
9. Semiconductor products may fail or malfunction with some probability.
The user of these products should therefore take responsibility to give thorough consideration to safety design
including redundancy, fire spread prevention measures, and malfunction prevention to prevent accidents causing
injury or death, fires and social damage, etc. that may ensue from the products' failure or malfunction.
The entire system must be sufficiently evaluated and applied on customer's own responsibility.
10. The products described herein are not designed to be radiation-proof. The necessary radiation measures should be
taken in the product design by the customer depending on the intended use.
11. The products described herein do not affect human health under normal use. However, they contain chemical
substances and heavy metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips
may be sharp. Take care when handling these with the bare hands to prevent injuries, etc.
12. When disposing of the products described herein, comply with the laws and ordinances of the country or region where
they are used.
13. The information described herein contains copyright information and know-how of SII Semiconductor Corporation.
The information described herein does not convey any license under any intellectual property rights or any other
rights belonging to SII Semiconductor Corporation or a third party. Reproduction or copying of the information
described herein for the purpose of disclosing it to a third-party without the express permission of SII Semiconductor
Corporation is strictly prohibited.
14. For more details on the information described herein, contact our sales office.
1.0-2016.01
www.sii-ic.com
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