S-85S1PD38-I8T1U [SII]
POWER MONITORING OUTPUT, 5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT;
| 型号： | S-85S1PD38-I8T1U |
| 厂家： | 
SEIKO INSTRUMENTS INC |
| 描述： | POWER MONITORING OUTPUT, 5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT 监视器 输入元件 开关 输出元件 |
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| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S-85S1P Series
POWER MONITORING OUTPUT,
5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN
SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
www.sii-ic.com
© SII Semiconductor Corporation, 2017
Rev.1.3_00
The S-85S1P Series introduces own distinctive low power consumption control and COT (Constant On-Time) control and
features ultra low current consumption and fast transient response. PWM / PFM switching control automatically switches to
PFM control when under light load, and the IC operates at ultra low current consumption of 260 nA quiescent current. The
S-85S1P Series realizes high efficiency in a wide range of load current consumption and provides strong support for
extended period operation of mobile devices and wearable devices which are equipped with compact batteries.
The function of the power monitoring output is prepared in the S-85S1P Series. The power monitoring output is a function
that divides the input voltage (VIN) of the DC-DC converter into VIN/2 or VIN/3 and outputs the voltage. For example, this
function makes it possible that the IC connects to a low voltage microcontroller A/D converter directly and the
microcontroller monitors a battery voltage.
Features
Applications
DC-DC converter block
• Ultra low current consumption:
• Efficiency (when under 100 μA load):
• Fast transient response:
• Input voltage:
• Wearable device
260 nA quiescent current
90.5%
COT control
• Bluetooth device
• Wireless sensor network device
• Healthcare equipment
• Smart meter
2.2 V to 5.5 V
• Output voltage:
0.7 V to 2.5 V, in 0.05 V step
2.6 V to 3.9 V, in 0.1 V step
1.5% (1.0 V ≤ VOUT ≤ 3.9 V)
15 mV (0.7 V ≤ VOUT < 1.0 V)
1.0 MHz (at PWM operation)
420 mΩ
• Portable game device
• Output voltage accuracy:
Package
• Switching frequency:
• SNT-8A
( 2.46 mm
• High side power MOS FET on-resistance:
• Low side power MOS FET on-resistance:
• Soft-start function:
× 1.97 mm × t0.5 mm max.)
320 mΩ
1 ms typ.
• Under voltage lockout function (UVLO):
• Thermal shutdown function:
1.8 V typ. (detection voltage)
135°C typ. (detection temperature)
450 mA (at L = 2.2 μH)
• Overcurrent limit function:
•
Automatic recovery type short-circuit protection function:Hiccup control
• Input and output capacitors:
Ceramic capacitor compatible
Power monitor block
• Low current consumption:
• Input voltage:
280 nA typ.
1.5 V to 5.5 V
VIN/2 (S-85S1PCxx)
VIN/3 (S-85S1PDxx)
• Output voltage:
Overall
• Operation temperature range:
• Lead-free (Sn 100%), halogen-free
Ta = −40°C to +85°C
Typical Application Circuit
Efficiency
L
VOUT(S) = 1.8 V
2.2 H
V
IN
V
OUT
100
80
60
40
20
0
VIN
SW
C
10 F
OUT
C
IN
10 F
V
IN = 2.5 V
PVSS
EN
VOUT
V
IN = 3.6 V
V
IN = 4.2 V
PMEN
PMOUT
0.01
0.1
1
10
100 1000
C
PM
VSS
0.22 F
I
OUT [mA]
1
POWER MONITORING OUTPUT, 5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S1P Series
Rev.1.3_00
Block Diagram
C
IN
VIN
VIN
VOUT
Ripple generation circuit
SW
Error amplifier
ON time generation
circuit
Output control circuit
L
VOUT
SW
UVP circuit
Reverse current
detection circuit
C
OUT
Reference voltage circuit
Soft-start cicuit
EN
Enable
PVSS
Overcurrent
circuit
Thermal shutdown circuit
UVLO circuit
protection circuit
V
IN
PMEN
Power monitor
enable circuit
PMOUT
C
PM
VSS
Figure 1
2
POWER MONITORING OUTPUT, 5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.3_00
S-85S1P Series
Product Name Structure
Users can select power monitor block output voltage and DC-DC converter block output voltage for the S-85S1P
Series. Refer to "1. Product name" regarding the contents of product name, "2. Package" regarding the
package, "3. Product name list" regarding details of the product name.
1. Product name
S-85S1P
x
xx
-
I8T1
U
Environmental code
U:
Lead-free (Sn 100%), halogen-free
Package name abbreviation and packing specification*1
I8T1: SNT-8A, Tape
DC-DC converter block output voltage*2, *3
07 to 39
(e.g., when the output voltage is 0.7 V, it is expressed as 07.)
Power monitor block output voltage
C: VIN/2
D: VIN/3
*1. Refer to the tape drawing.
*2. Refer to "3. Product name list".
*3. In the range from 0.7 V to 2.5 V, the products which have 0.05 V step are also available.
Contact our sales office when the product is necessary.
2. Package
Table 1 Package Drawing Codes
Package Name
SNT-8A
Dimension
PH008-A-P-SD
Tape
Reel
Land
PH008-A-C-SD
PH008-A-R-SD
PH008-A-L-SD
3
POWER MONITORING OUTPUT, 5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S1P Series
Rev.1.3_00
3. Product name list
Table 2
Output Voltage (VOUT
)
S-85S1PCxx
S-85S1PDxx
0.7 V 15 mV
0.8 V 15 mV
0.9 V 15 mV
1.0 V 1.5%
1.1 V 1.5%
1.2 V 1.5%
1.3 V 1.5%
1.4 V 1.5%
1.5 V 1.5%
1.6 V 1.5%
1.7 V 1.5%
1.8 V 1.5%
1.9 V 1.5%
2.0 V 1.5%
2.1 V 1.5%
2.2 V 1.5%
2.3 V 1.5%
2.4 V 1.5%
2.5 V 1.5%
2.6 V 1.5%
2.7 V 1.5%
2.8 V 1.5%
2.9 V 1.5%
3.0 V 1.5%
3.1 V 1.5%
3.2 V 1.5%
3.3 V 1.5%
3.4 V 1.5%
3.5 V 1.5%
3.6 V 1.5%
3.7 V 1.5%
3.8 V 1.5%
3.9 V 1.5%
S-85S1PC07-I8T1U
S-85S1PC08-I8T1U
S-85S1PC09-I8T1U
S-85S1PC10-I8T1U
S-85S1PC11-I8T1U
S-85S1PC12-I8T1U
S-85S1PC13-I8T1U
S-85S1PC14-I8T1U
S-85S1PC15-I8T1U
S-85S1PC16-I8T1U
S-85S1PC17-I8T1U
S-85S1PC18-I8T1U
S-85S1PC19-I8T1U
S-85S1PC20-I8T1U
S-85S1PC21-I8T1U
S-85S1PC22-I8T1U
S-85S1PC23-I8T1U
S-85S1PC24-I8T1U
S-85S1PC25-I8T1U
S-85S1PC26-I8T1U
S-85S1PC27-I8T1U
S-85S1PC28-I8T1U
S-85S1PC29-I8T1U
S-85S1PC30-I8T1U
S-85S1PC31-I8T1U
S-85S1PC32-I8T1U
S-85S1PC33-I8T1U
S-85S1PC34-I8T1U
S-85S1PC35-I8T1U
S-85S1PC36-I8T1U
S-85S1PC37-I8T1U
S-85S1PC38-I8T1U
S-85S1PC39-I8T1U
S-85S1PD07-I8T1U
S-85S1PD08-I8T1U
S-85S1PD09-I8T1U
S-85S1PD10-I8T1U
S-85S1PD11-I8T1U
S-85S1PD12-I8T1U
S-85S1PD13-I8T1U
S-85S1PD14-I8T1U
S-85S1PD15-I8T1U
S-85S1PD16-I8T1U
S-85S1PD17-I8T1U
S-85S1PD18-I8T1U
S-85S1PD19-I8T1U
S-85S1PD20-I8T1U
S-85S1PD21-I8T1U
S-85S1PD22-I8T1U
S-85S1PD23-I8T1U
S-85S1PD24-I8T1U
S-85S1PD25-I8T1U
S-85S1PD26-I8T1U
S-85S1PD27-I8T1U
S-85S1PD28-I8T1U
S-85S1PD29-I8T1U
S-85S1PD30-I8T1U
S-85S1PD31-I8T1U
S-85S1PD32-I8T1U
S-85S1PD33-I8T1U
S-85S1PD34-I8T1U
S-85S1PD35-I8T1U
S-85S1PD36-I8T1U
S-85S1PD37-I8T1U
S-85S1PD38-I8T1U
S-85S1PD39-I8T1U
Remark Please contact our sales office for products with specifications other than the above.
4
POWER MONITORING OUTPUT, 5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.3_00
S-85S1P Series
Pin Configuration
1. SNT-8A
Table 3
Top view
Pin No.
Symbol
PMOUT
Description
1
2
3
4
5
6
Power monitor output pin
Voltage output pin
GND pin
1
2
3
4
8
7
6
5
VOUT
VSS
SW
External inductor connection pin
Power GND pin
PVSS
VIN
Figure 2
Power supply pin
Enable pin
7
8
EN
"H"
"L"
: Enable (normal operation)
: Disable (standby)
Power monitor enable pin
PMEN
"H"
"L"
: Enable (normal operation)
: Disable (standby)
5
POWER MONITORING OUTPUT, 5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S1P Series
Rev.1.3_00
Absolute Maximum Ratings
Table 4
(Unless otherwise specified: Ta = +25°C, VSS = 0 V)
Item
Symbol
VIN
VEN
Absolute Maximum Rating
Unit
V
VIN pin voltage
VSS − 0.3 to VSS + 6.0
VSS − 0.3 to VIN + 0.3 ≤ VSS + 6.0
VSS − 0.3 to VSS + 6.0
VSS − 0.3 to VIN + 0.3 ≤ VSS + 6.0
VSS − 0.3 to VIN + 0.3 ≤ VSS + 6.0
VSS − 0.3 to VIN + 0.3 ≤ VSS + 6.0
VSS − 0.3 to VSS + 0.3 ≤ VSS + 6.0
−40 to +85
EN pin voltage
DC-DC converter block
Power monitor block
DC-DC converter block
V
PMEN pin voltage
VOUT pin voltage
VPMEN
VOUT
VPMOUT
VSW
V
V
PMOUT pin voltage Power monitor block
SW pin voltage
V
V
PVSS pin voltage
VPVSS
Topr
V
Operation temperature
Storage temperature
°C
°C
Tstg
−40 to +125
Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical
damage. These values must therefore not be exceeded under any conditions.
Thermal Resistance Value
Table 5
Item
Symbol
Condition
Board A
Min.
Typ.
211
173
−
−
−
Max.
Unit
−
−
−
−
−
−
−
−
−
−
°C/W
°C/W
°C/W
°C/W
°C/W
Board B
Board C
Board D
Board E
Junction-to-ambient thermal resistance*1 θja
SNT-8A
*1. Test environment: compliance with JEDEC STANDARD JESD51-2A
Remark Refer to " Power Dissipation" and "Test Board" for details.
6
POWER MONITORING OUTPUT, 5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.3_00
S-85S1P Series
Electrical Characteristics
1. DC-DC converter block
Table 6
(VIN = 3.6 V*1, Ta = +25°C unless otherwise specified)
Item
Symbol
VIN
Condition
Min.
Typ.
3.6
Max.
Unit
V
Operating input voltage
−
2.2
5.5
VOUT(S)
× 0.985
VOUT(S)
− 0.015
VOUT(S)
× 1.015
VOUT(S)
+ 0.015
1.0 V ≤ VOUT ≤ 3.9 V, no external parts
0.7 V ≤ VOUT <1.0 V, no external parts
VEN = 0 V
VOUT(S)
VOUT(S)
1
V
V
Output voltage*2
VOUT
Current consumption
at shutdown
ISSS
−
100
nA
VOUT = VOUT(S) + 0.1 V, VEN = VIN,
no external parts,
no switching operation
Current consumption
at switching off
ISS1
−
260
500
nA
High level input voltage
Low level input voltage
High level input current
Low level input current
High side power
MOS FET on-resistance
Low side power
MOS FET on-resistance
High side power
MOS FET leakage current
Low side power
MOS FET leakage current
Current limit*3
VSH
VSL
ISH
VIN = 2.2 V to 5.5 V, EN pin
VIN = 2.2 V to 5.5 V, EN pin
VIN = 2.2 V to 5.5 V, EN pin, VEN = VIN
VIN = 2.2 V to 5.5 V, EN pin, VEN = 0 V
1.1
−
−100
−100
−
−
−
−
−
V
V
0.3
100
100
nA
nA
ISL
RHFET
RLFET
IHSW
ISW = 100 mA
−
−
−
420
320
1
−
−
mΩ
mΩ
nA
ISW = −100 mA
VIN = 2.2 V to 5.5 V, VEN = 0 V, VSW = 0 V
VIN = 2.2 V to 5.5V, VEN = 0 V, VSW = VIN
100
ILSW
−100
1
−
−
nA
ILIM
L = 2.2 μH
−
450
mA
tON(S) = 1/fSW*5 × VOUT/VIN,
VOUT = VOUT(S) × 0.9
−
ON time*4
tON
tON(S)/1.3 tON(S) tON(S)/0.7 ns
Minimum OFF time
tOFF(MIN)
−
1.7
100
1.8
−
1.9
ns
V
UVLO detection voltage
UVLO release voltage
VUVLO
VUVLO
When VIN falls
−
+
When VIN rises
1.9
2.0
2.1
V
VOUT(S)
× 0.7
1.5
UVP detection voltage
Soft-start wait time
Soft-start time
VUVP
tSSW
tSS
−
−
−
−
−
−
−
V
Time until VOUT starts rising
Time until VOUT reaches 90% after it
starts rising
ms
ms
1.0
135
115
Thermal shutdown
detection temperature
Thermal shutdown
release temperature
TSD
TSR
Junction temperature
Junction temperature
−
−
−
−
°C
°C
*1. VIN = VOUT(S) + 1.0 V (VOUT(S) ≥ 2.6 V)
*2. VOUT: Actual output voltage
VOUT(S): Set output voltage
*3. The current limit changes according to the L value for the inductor to be used, input voltage, and output voltage.
Refer to " Operation" for details.
*4. tON: Actual ON time
tON(S): Set ON time
*5. fSW: Switching frequency (1 MHz)
7
POWER MONITORING OUTPUT, 5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S1P Series
Rev.1.3_00
2. Power monitor block
Table 7
(VIN = 3.6 V, Ta = +25°C unless otherwise specified)
Item
Symbol
Condition
Min.
1.5
−
Typ.
3.6
VIN/2
VIN/3
−
−
−
−
2.2
Max.
5.5
−
−
10
Unit
V
Operating input voltage VIN
−
S-85S1PCxx
S-85S1PDxx
V
Output voltage*1
VPMOUT(S) −10 μA ≤ IPMOUT ≤ 10 μA
−
V
Load current
IPMOUT
VPOF
RPS
−
−10
−30
−20
−
−
−
μA
mV
mV
Ω
S-85S1PCxx
S-85S1PDxx
30
Output offset voltage
Output impedance
Power-up time
−10 μA ≤ IPMOUT ≤ 10 μA
−10 μA ≤ IPMOUT ≤ 10 μA
CPM = 0.22 μF, no load
20
1000
10
S-85S1PCxx
S-85S1PDxx
ms
tPU
1.1
10
ms
Current consumption
during operation*2
PMEN pin input voltage
"H"
ISS1P
VPSH
VPSL
IPSH
VPMEN = VIN, no load (VEN = 0 V)
−
1.0
−
280
−
550
−
nA
V
V
IN = 3.6 V,
Determined by VPMOUT output level
PMEN pin input voltage
"L"
Determined by VPMOUT output level
−
0.25
100
100
−
V
PMEN pin input current
"H"
VPMEN = VIN
−100
−100
−
−
nA
nA
kΩ
PMEN pin input current
"L"
IPSL
VPMEN = 0 V
−
"L" output Nch
ON resistance
RPLOW
VPMEN = 0 V, VPMOUT = 0.1 V
2.8
*1. VPMOUT(S): Set output voltage
VPMOUT(S) + VPOF: Actual output voltage
*2. Current consumption when only the power monitor block is in operation.
8
POWER MONITORING OUTPUT, 5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.3_00
S-85S1P Series
Operation
1. DC-DC converter block
1. 1 Fast transient response
Distinctive COT (Constant On-Time) control is used for DC-DC converter control.
The S-85S1P Series monitors the output voltage (VOUT) using a comparator and if VOUT falls below the targeted
value, the high side power MOS FET will turn on for a certain amount of time. Since the high side power MOS FET
turns on and VOUT rises immediately after the load current fluctuates rapidly and VOUT falls, the fast transient
response is realized.
The S-85S1P Series outputs ON time in proportion to VOUT and in inverse proportion to power supply voltage.
Therefore, when in continuous mode, even if the power supply voltage or VOUT settings would change, it always
operates at a quasi-fixed frequency of 1 MHz.
1. 2 PWM / PFM switching control
The S-85S1P Series automatically switches between the pulse width modulation method (PWM) and pulse
frequency modulation method (PFM) according to the load current. If the output current (IOUT) is large, the IC will
operate using PWM control. If IOUT is small, the IC using PFM control, the pulse will skip according to the load
current. This reduces switching loss and improves efficiency when under light load.
The S-85S1P Series has a built-in reverse current detection circuit. The reverse current detection circuit monitors
the current flowing through the inductor. If the bottom of ripple current in the inductor falls to 0 mA, the high side
power MOS FET and low side power MOS FET will turn off and switching operation will stop. Switching frequency
will fall from 1.0 MHz by skipping a pulse. This means that the smaller IOUT is, the more the switching frequency
(fSW) will drop, and it reduces switching loss.
1. 3 Ultra low current consumption
When in discontinuous mode, the S-85S1P Series reduces current consumption to 260 nA typ. by intermittently
operating a control circuit and a protection circuit. When under light load, the high side power MOS FET and low
side power MOS FET will turn off. When switching operation stops and a certain amount of time elapses, only the
necessary circuits will operate.
Under voltage lockout function (UVLO), thermal shutdown function, current limit function, and automatic recovery
type short-circuit protection function are prepared in the S-85S1P Series, and each protection function will carry
out detection operation for a certain amount of time from when the high side power MOS FET turns on under light
load. It is thus able to realize ultra low current consumption. When under heavy load, the IC changes to continuous
mode as a result of the fact that the high side power MOS FET and low side power MOS FET turn on continuously,
so all the IC, including the protection circuits, will operate.
1. 4 EN pin
This pin starts and stops switching operation. When the EN pin is set to "L", the operation of all internal circuits,
including the high side power MOS FET, is stopped, reducing current consumption. Current consumption
increases when a voltage of 0.3 V to VIN − 0.3 V is applied to the EN pin. When not using the EN pin, connect it to
the VIN pin. Since the EN pin is neither pulled down nor pulled up internally, do not use it in the floating status.
The structure of the EN pin is shown in Figure 3.
Table 8
EN Pin
Internal Circuit
Enable (normal operation)
Disable (standby)
VOUT Pin Voltage
*2
"H"
"L"
VOUT
"High-Z"
*1. Refer to *2 in Table 6 in " Electrical Characteristics".
VIN
EN
VSS
Figure 3
9
POWER MONITORING OUTPUT, 5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S1P Series
Rev.1.3_00
1. 5 Under voltage lockout function (UVLO)
The S-85S1P Series has a built-in UVLO circuit to prevent the IC from malfunctioning due to a transient status at
power-on or a momentary drop in the supply voltage. When UVLO status is detected, the high side power MOS
FET and low side power MOS FET will turn off, and the SW pin will change to "High-Z". For this reason, switching
operation will stop. The soft-start function is reset if UVLO status is detected once, and is restarted by releasing
the UVLO status.
Note that the other internal circuits operate normally and the status is different from the disabled status.
Also, there is a hysteresis width for avoiding malfunctions due to generation of noise etc. in the input voltage.
1. 6 Thermal shutdown function
The S-85S1P Series has a built-in thermal shutdown circuit to limit overheating. When the junction temperature
increases to 135°C typ., the thermal shutdown circuit becomes the detection status, and the switching operation is
stopped. When the junction temperature decreases to 115°C typ., the thermal shutdown circuit becomes the
release status, and the switching operation is restarted.
If the thermal shutdown circuit becomes the detection status due to self-heating, the switching operation is stopped
and output voltage (VOUT) decreases. For this reason, the self-heating is limited and the temperature of the IC
decreases. The thermal shutdown circuit becomes release status when the temperature of the IC decreases, and
the switching operation is restarted, thus the self-heating is generated again. Repeating this procedure makes the
waveform of VOUT into a pulse-like form. Switching operation stopping and starting can be stopped by either setting
the EN pin to "L", lowering the output current (IOUT) to reduce internal power consumption, or decreasing the
ambient temperature.
Table 9
Thermal Shutdown Circuit
Release: 115°C typ.*1
VOUT Pin Voltage
Set value
"High-Z"
Detection: 135°C typ.*1
*1. Junction temperature
1. 7 Overcurrent protection function
The S-85S1P Series has a built-in current limit circuit.
The overcurrent protection circuit monitors the current that flows through the low side power MOS FET and limits
current to prevent thermal destruction of the IC due to an overload, magnetic saturation in the inductor, etc.
When a current exceeding the current limit (ILIM) flows through the low side power MOS FET, the current limit
circuit operates and prohibits turning on the high side power MOS FET until the current falls below the low side
current limit (ILIMDET). If the value of the current that flows through the low side power MOS FET falls to the ILIMDET
or lower, the S-85S1P Series returns to normal operation. ILIMDET is fixed at 270 mA typ. in the IC, and ILIM will vary
depending on the external parts to be used.
The relation between ILIM, the inductor value (L), the input voltage (VIN), and the output voltage (VOUT) are shown in
the following expression.
1
(VIN
−
VOUT) × VOUT
VIN
I
LIM = ILIMDET
+
×
2 × L × fSW
10
POWER MONITORING OUTPUT, 5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.3_00
S-85S1P Series
1. 8 Automatic recovery type short-circuit protection function (Hiccup control)
The S-85S1P Series has a built-in automatic recovery type short-circuit protection function for Hiccup control.
Hiccup control is a method for periodically carrying out automatic recovery when the IC detects overcurrent and
stops the switching operation.
1. 8. 1 When over load status is released
<1> Overcurrent detection
<2> Under voltage protection circuit (UVP circuit) detects a drop in the output voltage (VOUT).
<3> 220 μs elapse
<4> Switching operation stop (for 9 ms typ.)
<5> Overload status release
<6> The IC restarts, soft-start function starts.
In this case, it is unnecessary to input an external reset signal for restart.
<7> VOUT reaches VOUT(S) after 1.0 ms typ. elapses.
<1>
<5>
Overload status
Normal load status
I
LIMDET = 270 mA typ.
OUT = 200 mA max.
I*1
L
I
0 A
VSW
0 V
V
OUT(S)
V
OUT
V
UVP typ.
0 V
<3>
<7>
1.0 ms typ.
220 s
9.0 ms typ.
<2>
<4>
<6>
*1. Inductor current
Figure 4
1. 8. 2 When over load status continues
<1> Overcurrent detection
<2> The UVP circuit detects a drop in VOUT
.
<3> 220
μs elapse
<4> Switching operation stop (for 9 ms typ.)
<5> The IC restarts, soft-start function starts.
<6> The status returns to <2> when over load status continues after 1.25 ms typ. elapses.
<1>
Overload status
I
LIMDET = 270 mA typ.
I*1
L
I
OUT = 200 mA max.
0 A
VSW
0 V
V
OUT(S)
V
OUT
V
UVP typ.
0 V
<3>
<6>
1.25 ms typ.
<3>
220 s
9.0 ms typ.
220 s
9.0 ms typ.
<2>
<4>
<5>
<2>
<4>
*1. Inductor current
Figure 5
11
POWER MONITORING OUTPUT, 5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S1P Series
Rev.1.3_00
1. 9 Pre-bias compatible soft-start function
The S-85S1P Series has a built-in pre-bias compatible soft-start circuit.
If the pre-bias compatible soft-start circuit starts when electrical charge remains in the output voltage (VOUT) as a
result of power supply restart, etc., or when VOUT is biased beforehand (pre-bias status), switching operation is
stopped until the soft-start voltage exceeds the internal feedback voltage, and then VOUT is maintained. If the
soft-start voltage exceeds the internal feedback voltage, switching operation will restart and VOUT will rise to the
output voltage setting value (VOUT(S)). This allows VOUT(S) to be reached without lowering the pre-biased VOUT
.
In soft-start circuits which are not pre-bias compatible, a large current flows as a result of the discharge of the
residual electric charge through the low side power MOS FET when switching operation starts, which could cause
damage, however in a pre-bias compatible soft-start circuit, the IC is protected from the large current when
switching operation starts, and it makes power supply design for the application circuit simpler.
In the S-85S1P Series, VOUT reaches VOUT(S) gradually due to the soft-start circuit.
In the following cases, rush current and VOUT overshoot are reduced.
• At power-on
• When the EN pin changes from "L" to "H".
• When UVLO operation is released.
• When thermal shutdown is released.
• At short-circuit recovery
In addition, the soft-start circuit operates under the following conditions.
The soft-start circuit starts operating after "H" is input to the EN pin and the soft-start wait time (tSSW) = 1.5 ms typ.
elapses. The soft-start time (tSS) is set to 1.0 ms typ.
• At power supply restart (the IC restart)
• At UVLO detection (after UVLO release)
• At thermal shutdown detection (after thermal shutdown release)
• After Hiccup control
Soft-start wait time Soft-start time
Soft-start operation during pre-bias
(tSSW
)
(tSS)
V
EN
VOUT
V
SW
Figure 6
12
POWER MONITORING OUTPUT, 5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.3_00
S-85S1P Series
2. Power monitor block
The power monitoring output is a function that divides the input voltage (VIN) of the DC-DC converter into VIN/2 or
VIN/3 and outputs the voltage. For example, the microcontroller can monitor battery voltage by inputting the output
voltage (VPMOUT) to the A/D converter in the microcontroller. Connecting the IC and the microcontroller makes it
possible that it is used as a remained battery capacity monitor for lithium-ion rechargeable batteries, coin batteries,
and other batteries.
V
IN is divided into VIN/2 in S-85S1PCxx, and VIN/3 in S-85S1PDxx.
Low output impedance is realized since the buffer amp in the power monitor block constitutes a voltage follower.
Each the power monitor block and DC-DC converter block operate independently. When the PMEN pin is "L" and the
power monitor block is in standby status, the electrical charge in the output capacitor connected to the PMOUT pin is
discharged by an impedance of approximately 2.8 kΩ.
2. 1 Basic operation
Figure 7 shows the block diagram of the power monitor block to describe basic operation.
Reference voltage (Vrefpm) is generated by dividing the input voltage (VIN) to VIN/2 or VIN/3 using the dividing
resistance (Rpm1 and Rpm2). Since the buffer amplifier constitutes a voltage follower, it can perform the feedback
control so that VPMOUT and Vrefpm are the same. Low output impedance is realized by the buffer amplifier, while
outputting VPMOUT according to VIN.
When "L" is input to the PMEN pin the current which flows to Rpm1 and Rpm2 and the current which flows to the
buffer amplifier can be stopped. The buffer amplifier output is pulled down to VSS by the built-in N-channel
transistor, and VPMOUT is set to the VSS level.
The difference, the output offset voltage (VPOF), is generated between VPMOUT and VPMOUT(S), and it is expressed
with VPMOUT = VPMOUT(S) + VPOF
.
In addition, VPMOUT will change slightly according to the load current, and the value of change is expressed as the
output impedance (RPS).
VIN
SW
Buffer amplifier
Rpm1
Vrefpm
+
−
PMOUT
Rpm2
PMEN
VSS
Power monitor
enable circuit
Figure 7
13
POWER MONITORING OUTPUT, 5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S1P Series
Rev.1.3_00
2. 2 PMEN pin
The PMEN pin controls the power monitor enable circuit.
When "H" is input to the PMEN pin, the power monitor enable circuit operates. This enables the power monitoring
output and allows for monitoring of the power supply voltage. When "L" is input to the PMEN pin, the enable circuit
stops. This disables the power monitoring output, reducing the IC current consumption. In addition, the PMEN pin
has absolutely no effect on the operation of the DC-DC converter block.
Table 10
PMEN Pin
Power Monitoring Output
Enable (normal operation)
Disable (standby)
Output Voltage (VPMOUT
)
*1
"H"
"L"
VPMOUT
VSS level
*1. Refer to *1 in Table 7 in " Electrical Characteristics".
Figure 8 shows the internal equivalent circuit structure in relation to the PMEN pin. The PMEN pin is neither pulled
up nor pulled down, so do not use it in the floating status. When not using the PMEN pin, connect it to the VIN pin.
Note that the current consumption increases when a voltage of 0.25 V to VIN − 0.3 V is applied to the PMEN pin.
VIN
PMEN
VSS
Figure 8
14
POWER MONITORING OUTPUT, 5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.3_00
S-85S1P Series
2. 3 PMEN pin voltage and output voltage (VPMOUT
)
Figure 9 shows the relation between the PMEN pin voltage and the power monitoring output.
When "H" is input to the PMEN pin, the power monitoring output is enabled. Once power-up time (tPU) = 10 ms
max.*1 elapses, the output voltage (VPMOUT) will settle and the power supply voltage can be monitored.
When "L" is input to the PMEN pin, the power monitoring output is disabled. VPMOUT is set to the VSS level by the
built-in N-channel transistor.
By inputting "H" and "L" alternately to the PMEN pin, allowing for minimization of current consumption during the
period when the power supply voltage is not monitored.
*1. Ta = +25°C, VIN = 3.6 V, CPM = 0.22 μF, no load
Active "H"
VPMEN
tPU
tPU
VPMOUT(S) + VPOF
VPMOUT(S) + VPOF
VPMOUT
Figure 9
Remark VPMEN = VIN ↔ VSS
15
POWER MONITORING OUTPUT, 5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S1P Series
Rev.1.3_00
Typical Application
Figure 10 shows the circuit diagram of the typical application in the S-85S1P Series, and Figure 11 shows the timing
chart.
As shown in Figure 10, connect the PMOUT pin to an analog input pin (AIN pin) of the A/D converter in the
microcontroller. The microcontroller can monitor the battery voltage by inputting the output voltage (VPMOUT) to the A/D
converter.
The input voltage from the battery is converted to output voltage by the switching operation, and the microcontroller
starts driving with the voltage. The power monitoring output can be controlled by inputting "H" and "L" signals output
from the microcontroller I/O pin to the PMEN pin. Control the power monitoring output according to the A/D converter
operation timing.
When inputting "H" to the PMEN pin, the microcontroller monitors the battery voltage. The IC current consumption can
be minimized by inputting "L" to the PMEN pin when battery voltage is not monitored.
S-85S1P Series
Microcontroller
L
VDD
SW
VIN
COUT
VOUT
PMOUT
VSS
A/D
converter
EN
PMEN
PVSS
AIN
CIN
Battery
VSS
I/O
CPM
Figure 10
Active "H"
VPMEN
tPU
tPU
tPU
VPMOUT(S) + VPOF
VPMOUT
Voltage monitoring timing
Figure 11
16
POWER MONITORING OUTPUT, 5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.3_00
S-85S1P Series
Typical Circuit
VIN
VOUT
Ripple generation circuit
ON time generation
SW
VIN
C
IN
Error amplifier
10 μF
−
+
+
Output control circuit
L
VOUT
SW
2.2 μH
circuit
UVP circuit
−
+
SS
Reverse current
detection circuit
C
10 μF
OUT
Reference voltage circuit
Soft-start cicuit
+
−
EN
PVSS
Overcurrent
Thermal shutdown circuit
UVLO cicuit
protection circuit
+
−
V
IN
PMEN
Power monitor
enable circuit
PMOUT
+
−
C
PM
0.22 μF
VSS
Figure 12
Caution The above connection diagram and constants will not guarantee successful operation. Perform
thorough evaluation using an actual application to set the constants.
17
POWER MONITORING OUTPUT, 5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S1P Series
Rev.1.3_00
External Parts Selection
Selectable values and recommended values for external parts are shown in Table 11.
Use ceramic capacitors for CIN and COUT
.
Table 11
Input Capacitor Output Capacitor
Inductor
(L)
Power Monitor Output Capacitor
Item
(CIN)
2.2 μF or larger
10 μF
(COUT
)
(CPM)
Selectable value
4.7 μF to 100 μF 1.5 μH to 10 μH
10 μF 2.2 μH
0.10 μF to 0.22 μF
Recommended value
−
1. DC-DC converter block input capacitor (CIN)
CIN can lower the power supply impedance, average the input current, improve the efficiency and noise tolerance.
Select a capacitor according to the impedance of the power supply to be used. Also take into consideration the DC
bias characteristics of the capacitor to be used.
2. DC-DC converter block output capacitor (COUT
)
COUT is used to smooth output voltage. If the capacitance is large, the overshoot and undershoot during load
transient and output ripple voltage can be improved even more. Select a proper capacitor after the sufficient
evaluation under actual conditions.
Table 12 Recommended Capacitors (CIN, COUT) List (at VOUT(S) ≤ 3.3 V)
Withstanding
Manufacturer
Part Number
Capacitance
Dimensions (L × W × H)
Voltage
6.3 V
TDK Corporation
TDK Corporation
C1005X5R0J106M050BC
C1608X5R0J106K080AB
10 μF
10 μF
10 μF
1.0 mm × 0.5 mm × 0.5 mm
1.6 mm × 0.8 mm × 0.8 mm
1.6 mm × 0.8 mm × 0.5 mm
6.3 V
Murata Manufacturing Co., Ltd. GRM185R60J106ME15
6.3 V
Table 13 Recommended Capacitors (CIN, COUT) List (at VOUT(S) > 3.3 V)
Withstanding
Manufacturer
TDK Corporation
Part Number
Capacitance
Dimensions (L × W × H)
Voltage
6.3 V
C1608X5R0J106K080AB
10 μF
10 μF
1.6 mm × 0.8 mm × 0.8 mm
1.6 mm × 0.8 mm × 0.5 mm
Murata Manufacturing Co., Ltd. GRM185R60J106ME15
6.3 V
3. DC-DC converter block inductor (L)
When selecting L, note the allowable current. If a current exceeding this allowable current flows through the inductor,
magnetic saturation may occur, and there may be risks which substantially lower efficiency and damage the IC as a
result of large current.
Therefore, select an inductor so that peak current value (IPK), even during overcurrent detection, does not exceed the
allowable current.
When prioritizing the load response, select an inductor with a small L value such as 2.2 μH. When prioritizing the
efficiency, select an inductor with a large L value such as 10 μH. IPK is calculated using the following expression.
1
(VIN
−
VOUT) × VOUT
VIN
IPK = IOUT
+
×
2 × L × fSW
Table 14 Recommended Inductors (L) List
Rated
Current
Manufacturer
Part Number
Inductance
Dimensions (L × W × H)
ALPS ELECTRIC CO., LTD.
GLUHK2R201A
2.2 μH
2.2 μH
2.2 μH
2.2 μH
2.2 μH
2.2 μH
1700 mA 2.0 mm × 1.6 mm × 1.0 mm
2000 mA 2.0 mm × 1.2 mm × 1.0 mm
1100 mA 2.0 mm × 1.6 mm × 1.0 mm
1300 mA 2.0 mm × 1.6 mm × 0.9 mm
Murata Manufacturing Co., Ltd.
DFE201210S-2R2M=P2
Würth Elektronik GmbH & Co. KG 74438343022
Murata Manufacturing Co., Ltd.
TDK Corporation
LQM2MPN2R2MGH
MLP2016G2R2M
PFL2015-222ME
850 mA
2.0 mm × 1.6 mm × 1.0 mm
Coilcraft, Inc.
1050 mA 2.2 mm × 1.45 mm × 1.5 mm
18
POWER MONITORING OUTPUT, 5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.3_00
S-85S1P Series
4. Power monitor block output capacitor (CPM
)
When selecting CPM, take into consideration the operation stability. If the capacitance is large, the rising time until
V
PMOUT reaches the intended voltage (power-up time (tPU)) will be longer.
Table 15 Recommended Capacitors (CPM) List
Withstanding
Voltage
Manufacturer
Part Number
Capacitance
Dimensions (L × W × H)
TDK Corporation
TDK Corporation
CGA2B2X5R1A104M050BA
C0603X5R0J224M030BB
0.10 μF
0.22 μF
0.10 μF
0.22 μF
6.3 V
6.3 V
6.3 V
6.3 V
1.0 mm × 0.5 mm × 0.5 mm
0.6 mm × 0.3 mm × 0.3 mm
0.6 mm × 0.3 mm × 0.3 mm
0.6 mm × 0.3 mm × 0.3 mm
Murata Manufacturing Co., Ltd. GRM033R60J104ME19
Murata Manufacturing Co., Ltd. GRM033R60J224ME90
19
POWER MONITORING OUTPUT, 5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S1P Series
Rev.1.3_00
Board Layout Guidelines
Note the following cautions when determining the board layout for the S-85S1P Series.
• Place CIN as close to the VIN pin and the PVSS pin as possible.
• Make the VIN pattern and GND pattern as wide as possible.
• Place thermal vias in the GND pattern to ensure sufficient heat dissipation.
• Keep thermal vias near CIN and COUT approximately 3 mm to 4 mm away from capacitor pins.
• Large current flows through the SW pin. Make the wiring area of the pattern to be connected to the SW pin small to
minimize parasitic capacitance and emission noise.
• Do not wire the SW pin pattern under the IC.
Total size: 5.7 mm × 2.4 mm = 13.7 mm2
Figure 13 Reference Board Pattern
Caution The above pattern diagram does not guarantee successful operation. Perform thorough evaluation
using the actual application to determine the pattern.
Remark Refer to the land drawing of SNT-8A and "SNT Package User's Guide".
20
POWER MONITORING OUTPUT, 5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.3_00
S-85S1P Series
Precautions
•
•
Mount external capacitors and inductors as close as possible to the IC, and make single GND.
Characteristic ripple voltage and spike noise occur in the IC containing switching regulators. Moreover rush current
flows at the time of a power supply injection. Because these largely depend on the inductor, the capacitor and
impedance of power supply to be used, fully check them using an actually mounted model.
•
The 10 μF capacitor connected between the VIN pin and the VSS pin is a bypass capacitor. It stabilizes the power
supply in the IC when application is used with a heavy load, and thus effectively works for stable switching
regulator operation. Allocate the bypass capacitor as close to the IC as possible, prioritized over other parts.
•
•
•
Although the IC contains a static electricity protection circuit, static electricity or voltage that exceeds the limit of
the protection circuit should not be applied.
The power dissipation of the IC greatly varies depending on the size and material of the board to be connected.
Perform sufficient evaluation using an actual application before designing.
SII Semiconductor Corporation assumes no responsibility for the way in which this IC is used on products created
using this IC or for the specifications of that product, nor does SII Semiconductor Corporation assume any
responsibility for any infringement of patents or copyrights by products that include this IC either in Japan or in
other countries.
21
POWER MONITORING OUTPUT, 5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S1P Series
Rev.1.3_00
Characteristics (Typical Data)
1. Example of major power supply dependence characteristics (Ta = +25°C)
DC-DC converter block
1. 1 Current consumption at switching off (ISS1
vs. Input voltage (VIN)
)
1. 2 Current consumption during shutdown (ISSS)
vs. Input voltage (VIN)
500
400
300
200
100
0
100
80
60
40
20
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VIN [V]
VIN [V]
1. 3 Output voltage (VOUT) vs. Input voltage (VIN)
1. 4 Output voltage (VOUT) vs. Input voltage (VIN)
VOUT(S) = 1.2 V
VOUT(S) = 1.8 V
1.230
1.840
1.220
1.210
1.200
1.190
1.180
1.820
1.800
1.780
1.760
1.170
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
V
IN [V]
VIN [V]
1. 5 Output voltage (VOUT) vs. Input voltage (VIN)
VOUT(S) = 2.5 V
2.600
2.400
2.200
2.000
1.800
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
V
IN [V]
1. 6 ON time (tON) vs. Input voltage (VIN)
VOUT(S) = 1.8 V
1. 7 Switching frequency (fSW) vs. Input voltage (VIN)
VOUT(S) = 1.8 V
1.0
0.8
0.6
0.4
0.2
0.0
1.4
1.2
1.0
0.8
0.6
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VIN [V]
VIN [V]
22
POWER MONITORING OUTPUT, 5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.3_00
S-85S1P Series
1. 8 Soft-start wait time (tSSW) vs. Input voltage (VIN) 1. 9 Soft-start time (tSS) vs. Input voltage (VIN)
2.50
2.00
1.50
1.00
0.50
0.00
2.50
2.00
1.50
1.00
0.50
0.00
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VIN [V]
VIN [V]
1. 10 High side power MOS FET on-resistance (RHFET
vs. Input voltage (VIN)
)
1. 11 Low side power MOS FET on-resistance (RLFET
vs. Input voltage (VIN)
)
800
800
700
700
600
600
500
500
400
400
300
300
200
200
100
100
0
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VIN [V]
VIN [V]
1. 12 High side power MOS FET leakage current (IHSW
vs. Input voltage (VIN)
)
1. 13 Low side power MOS FET leakage current (ILSW
vs. Input voltage (VIN)
)
100
80
60
40
20
100
80
60
40
20
0
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VIN [V]
VIN [V]
1. 14 High level input voltage (VSH) vs. Input voltage (VIN)
1. 15 Low level input voltage (VSL) vs. Input voltage (VIN)
1.2
1.0
0.8
0.6
0.4
0.2
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
V
IN [V]
VIN [V]
23
POWER MONITORING OUTPUT, 5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S1P Series
Rev.1.3_00
Power monitor block
1. 16 Output voltage (VPMOUT) vs. Input voltage (VIN) 1. 17 Output voltage (VPMOUT) vs. Input voltage (VIN)
PMOUT(S) = VIN/2 PMOUT(S) = VIN/3
V
V
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
V
IN [V]
VIN [V]
1. 18 Current consumption during operation (ISS1P
vs. Input voltage (VIN)
)
1. 19 Output offset voltage (VPOF) vs. Input voltage (VIN)
1000
800
600
400
200
40
20
0
−
20
40
0
−
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
V
IN [V]
VIN [V]
1. 20 Power-up time (tPU) vs. Input voltage (VIN)
PMOUT(S) = VIN/2, CPM = 0.22 μF
1. 21 Power-up time (tPU) vs. Input voltage (VIN)
PMOUT(S) = VIN/3, CPM = 0.22 μF
V
V
10
10
8
8
6
6
4
4
2
2
0
0
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
V
IN [V]
VIN [V]
1. 22 PMEN pin input voltage "H" (VPSH
vs. Input voltage (VIN)
)
1. 23 PMEN pin input voltage "L" (VPSL
vs. Input voltage (VIN)
)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
V
IN [V]
VIN [V]
24
POWER MONITORING OUTPUT, 5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.3_00
S-85S1P Series
2. Example of major temperature characteristics (Ta = −40°C to +85°C)
DC-DC converter block
2. 1 Current consumption at switching off (ISS1
vs. Temperature (Ta)
)
2. 2 Current consumption during shutdown (ISSS
vs. Temperature (Ta)
)
500
200
150
V
DD = 2.2 V
400
300
200
100
0
V
DD = 5.5 V
V
DD = 2.2 V
100
50
0
V
DD = 3.6 V
V
DD = 3.6 V
V
DD = 5.5 V
−
40
−25
0
25
50
75 85
−40
−25
0
25
50
75 85
Ta [C]
Ta [C]
2. 4 Output voltage (VOUT) vs. Temperature (Ta)
OUT(S) = 1.8 V
2. 3 Output voltage (VOUT) vs. Temperature (Ta)
V
OUT(S) = 1.2 V
V
1.230
1.220
1.210
1.200
1.190
1.180
1.170
1.840
1.820
1.800
1.780
1.760
V
DD = 2.2 V
V
DD = 2.2 V
V
DD = 5.5 V
V
DD = 3.6 V
V
DD = 3.6 V
50
V
DD = 5.5 V
25
−
40
−25
0
25
Ta [C]
75 85
−40
−25
0
50
75 85
Ta [C]
2. 5 Output voltage (VOUT) vs. Temperature (Ta)
VOUT(S) = 2.5 V
2.560
2.540
V
DD = 5.5 V
2.520
2.500
2.480
2.460
2.440
V
DD = 3.6 V
50
40
25
0
25
Ta [C]
75 85
2. 6 ON time (tON) vs. Temperature (Ta)
2. 7 Switching frequency (fSW) vs. Temperature (Ta)
1.2
1.0
1.4
1.2
1.0
0.8
0.6
V
DD = 3.6 V
0.8
0.6
0.4
0.2
0.0
V
DD = 3.6 V
V
DD = 2.2 V
V
DD = 2.2 V
50 75 85
V
DD = 5.5 V
0
V
DD = 5.5 V
25
Ta [C]
−
40
−25
0
50
75 85
−40
−
25
25
Ta [C]
25
POWER MONITORING OUTPUT, 5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S1P Series
Rev.1.3_00
2. 8 Soft-start wait time (tSSW) vs. Temperature (Ta)
2. 9 Soft-start time (tSS) vs. Temperature (Ta)
2.50
2.00
1.50
2.50
2.00
1.50
1.00
0.50
0.00
V
DD = 2.2 V
V
DD = 5.5 V
1.00
0.50
0.00
V
DD = 3.6 V
V
DD = 2.2 V
V
DD = 5.5 V
25
VDD = 3.6 V
40
25
0
25
50
75 85
40
0
25
Ta [C]
50
75 85
Ta [C]
2. 10 High side power MOS FET on-resistance (RHFET
vs. Temperature (Ta)
)
2. 11 Low side power MOS FET on-resistance (RLFET
vs. Temperature (Ta)
)
800
800
700
V
DD = 2.2 V
700
600
500
400
300
200
100
0
600
500
400
300
200
100
0
V
DD = 2.2 V
V
DD = 3.6 V
50
V
DD = 3.6 V
50 75 85
VDD = 5.5 V
V
DD = 5.5 V
40 25
0
25
Ta [C]
75 85
40 25
0
25
Ta [C]
2. 12 High side power MOS FET leakage current (IHSW
vs. Temperature (Ta)
)
2. 13 Low side power MOS FET leakage current (ILSW
vs. Temperature (Ta)
)
300
250
200
150
300
250
V
DD = 5.5 V
200
150
100
50
V
DD = 3.6 V
V
DD = 5.5 V
V
DD = 3.6 V
100
50
0
V
DD = 2.2 V
V
DD = 2.2 V
0
−40
−25
0
25
50
75 85
−40
−25
0
25
50
75 85
Ta [C]
Ta [C]
2. 14 High level input voltage (VSH) vs. Temperature (Ta) 2. 15 Low level input voltage (VSL) vs. Temperature (Ta)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
DD = 5.5 V
V
DD = 5.5 V
V
DD = 3.6 V
50
V
DD = 3.6 V
V
DD = 2.2 V
0
V
DD = 2.2 V
25
40
25
25
75 85
−40
−
0
25
Ta [C]
50
75 85
Ta [C]
26
POWER MONITORING OUTPUT, 5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.3_00
S-85S1P Series
2. 16 UVLO detection voltage (VUVLO−) vs. Temperature (Ta)
2. 17 UVLO release voltage (VUVLO+) vs. Temperature (Ta)
2.2
2.1
2.0
1.9
1.8
1.7
1.6
2.2
2.1
2.0
1.9
1.8
1.7
1.6
40
25
0
25
50
75 85
40
25
0
25
50
75 85
Ta [C]
Ta [C]
27
POWER MONITORING OUTPUT, 5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S1P Series
Rev.1.3_00
Power monitor block
2. 18 Output voltage (VPMOUT) vs. Temperature (Ta)
2. 19 Output voltage (VPMOUT) vs. Temperature (Ta)
VPMOUT(S) = VIN/2
VPMOUT(S) = VIN/3
3.0
2.0
2.5
1.5
V
DD = 5.5 V
VDD = 5.5 V
2.0
1.5
1.0
0.5
0.0
V
DD = 1.5 V
VDD = 1.5 V
1.0
0.5
0.0
V
DD = 3.6 V
VDD = 3.6 V
−40
−25
0
25
Ta [C]
50
75 85
−40
−25
0
25
Ta [C]
50
75 85
2. 20 Current consumption during operation (ISS1P
vs. Temperature (Ta)
)
2. 21 Output offset voltage (VPOF) vs. Temperature (Ta)
1000
800
40
V
DD = 5.5 V
20
0
V
DD = 5.5 V
V
DD = 3.6 V
600
400
200
0
V
DD = 1.5 V
−
20
40
V
DD = 3.6 V
V
DD = 1.5 V
−
−40
−
25
0
25
50
75 85
−40
−25
0
25
Ta [C]
50
75 85
Ta [C]
2. 22 Power-up time (tPU) vs. Temperature (Ta)
2. 23 Power-up time (tPU) vs. Temperature (Ta)
V
PMOUT(S) = VIN/2, CPM = 0.22 μF
V
PMOUT(S) = VIN/3, CPM = 0.22 μF
10
8
10
8
V
DD = 5.5 V
V
DD = 5.5 V
V
DD = 3.6 V
V
DD = 3.6 V
6
6
VDD = 1.5 V
4
4
V
DD = 1.5 V
2
2
0
0
−40
−25
0
25
Ta [C]
50
75 85
−40
−25
0
25
50
75 85
Ta [C]
2. 24 PMEN pin input voltage (VPSH) vs. Temperature (Ta) 2. 25 PMEN pin input voltage (VPSL) vs. Temperature (Ta)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
DD = 5.5 V
V
DD = 5.5 V
V
DD = 3.6 V
V
DD = 3.6 V
V
DD = 1.5 V
V
DD = 1.5 V
−40
−25
0
25
50
75 85
−40
−25
0
25
50
75 85
Ta [C]
Ta [C]
28
POWER MONITORING OUTPUT, 5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.3_00
S-85S1P Series
3. Transient response characteristics
The external parts shown in Table 16 are used in "3. Transient response characteristics".
Table 16
Element Name
Inductor
Constant
2.2 μH
10 μF
Manufacturer
ALPS ELECTRIC CO., LTD.
TDK Corporation
Part Number
GLUHK2R201A
Input capacitor
C1608X5R0J106K080AB
C1608X5R0J106K080AB
Output capacitor
10 μF
TDK Corporation
3. 1 Power-on (VOUT = 1.8 V, VIN = 0 V → 3.6 V, Ta = +25°C)
3. 1. 1 IOUT = 0.1 mA
3. 1. 2 IOUT = 200 mA
700
600
500
400
300
200
100
0
700
600
500
400
300
200
100
0
4
3
2
1
0
1
2
3
4
4
3
2
1
0
1
2
3
4
V
IN
V
IN
V
OUT
V
OUT
I
L
I
L
100
100
0
1
2
3
4
5
0
1
2
3
4
5
Time [ms]
Time [ms]
3. 2 Transient response characteristics of EN pin
(VOUT = 1.8 V, VIN = 3.6 V, VEN = 0 V → 3.6 V, Ta = +25°C)
3. 2. 1 IOUT = 0.1 mA
3. 2. 2 IOUT = 200 mA
700
600
500
400
300
200
100
0
700
600
500
400
300
200
100
0
4
3
2
1
0
1
2
3
4
4
3
2
1
0
1
2
3
4
V
EN
V
EN
V
OUT
V
OUT
I
L
I
L
100
100
0
1
2
3
4
5
0
1
2
3
4
5
Time [ms]
Time [ms]
3. 3 Power supply fluctuation (VOUT = 1.8 V, Ta = +25°C)
3. 3. 1 IOUT = 0.1 mA
3. 3. 2 IOUT = 200 mA
VIN = 3.6 V → 4.2 V → 3.6 V
VIN = 3.6 V → 4.2 V → 3.6 V
2.10
2.00
1.90
1.80
1.70
2.10
5
4
3
2
1
5
4
3
2
1
2.00
V
IN
V
IN
1.90
1.80
1.70
V
OUT
V
OUT
0
10
20
30
40
50
0
10
20
30
40
50
Time [ms]
Time [ms]
29
POWER MONITORING OUTPUT, 5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S1P Series
Rev.1.3_00
3. 4 Load fluctuation (VOUT = 1.8 V, VIN = 3.6 V, Ta = +25°C)
3. 4. 1 IOUT = 0.1 mA → 10 mA → 0.1 mA
3. 4. 2 IOUT = 0.1 mA → 200 mA → 0.1 mA
2.00
1.95
1.90
1.85
1.80
1.75
1.70
2.00
1.95
1.90
1.85
1.80
1.75
1.70
30
300
200
100
0
20
10
I
OUT
I
OUT
0
10
20
30
100
200
300
V
OUT
V
OUT
0.0
0.2
0.4
0.6
0.8
1.0
0.0
0.2
0.4
0.6
0.8
1.0
Time [ms]
Time [ms]
Reference Data
The external parts shown in Table 17 are used in " Reference Data".
Table 17
Condition
<1>
Inductor (L)
Input Capacitor (CIN)
C1005X5R0J106M050BC (10 μF) C1005X5R0J106M050BC (10 μF)
TDK Corporation
Output Capacitor (COUT)
GLUHK2R201A (2.2 μH)
ALPS ELECTRIC CO., LTD TDK Corporation
DFE201210S (2.2 μH)
Toko Ink.
C1005X5R0J106M050BC (10 μF) C1005X5R0J106M050BC (10 μF)
<2>
TDK Corporation
TDK Corporation
1. VOUT = 1.2 V (External parts: Condition<1>)
1. 1 Efficiency (η) vs. Output current (IOUT
)
1. 2 Output voltage (VOUT) vs. Output current (IOUT)
100
1.5
80
1.4
VIN = 5.5 V
60
40
20
0
1.3
1.2
1.1
1.0
V
IN = 3.6 V
V
IN = 5.5 V
V
IN = 3.6 V
10
0.001 0.01
0.1
1
10
100
0.001 0.01
0.1
1
100
IOUT [mA]
IOUT [mA]
2. VOUT = 1.8 V (External parts: Condition<1>)
2. 1 Efficiency (η) vs. Output current (IOUT
)
2. 2 Output voltage (VOUT) vs. Output current (IOUT)
100
2.0
V
IN = 5.5 V
80
1.9
1.8
1.7
1.6
1.5
60
40
20
0
V
IN = 3.6 V
VIN = 5.5 V
V
IN = 3.6 V
0.001 0.01
0.1
1
10
100
0.001 0.01
0.1
1
10
100
IOUT [mA]
IOUT [mA]
30
POWER MONITORING OUTPUT, 5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.3_00
S-85S1P Series
3. VOUT = 1.2 V (External parts: Condition<2>)
3. 1 Efficiency (η) vs. Output current (IOUT
)
3. 2 Output voltage (VOUT) vs. Output current (IOUT)
100
1.5
80
1.4
VIN = 5.5 V
60
40
20
0
1.3
1.2
1.1
1.0
V
IN = 3.6 V
V
IN = 5.5 V
V
IN = 3.6 V
10
0.001 0.01
0.1
1
10
100
0.001 0.01
0.1
1
100
IOUT [mA]
IOUT [mA]
4. VOUT = 1.8 V (External parts: Condition<2>)
4. 1 Efficiency (η) vs. Output current (IOUT
)
4. 2 Output voltage (VOUT) vs. Output current (IOUT)
100
2.0
V
IN = 5.5 V
80
1.9
1.8
1.7
1.6
1.5
60
40
20
0
V
IN = 3.6 V
VIN = 5.5 V
V
IN = 3.6 V
0.001 0.01
0.1
1
10
100
0.001 0.01
0.1
1
10
100
IOUT [mA]
IOUT [mA]
31
POWER MONITORING OUTPUT, 5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S1P Series
Rev.1.3_00
Power Dissipation
SNT-8A
Tj = 125C max.
1.0
0.8
B
0.6
A
0.4
0.2
0.0
0
25
50
75
100 125 150 175
Ambient temperature (Ta) [C]
Board
Power Dissipation (PD)
A
B
C
D
E
0.47 W
0.58 W
−
−
−
32
SNT-8A Test Board
No. SNT8A-A-Board-SD-1.0
SII Semiconductor Corporation
1.97±0.03
6
5
8
7
+0.05
-0.02
0.08
1
2
3
4
0.5
0.48±0.02
0.2±0.05
No. PH008-A-P-SD-2.1
TITLE
SNT-8A-A-PKG Dimensions
PH008-A-P-SD-2.1
No.
ANGLE
UNIT
mm
SII Semiconductor Corporation
+0.1
-0
4.0±0.1
2.0±0.05
0.25±0.05
ø1.5
0.65±0.05
ø0.5±0.1
4.0±0.1
2.25±0.05
5°
4 3 2 1
5 6 7 8
Feed direction
No. PH008-A-C-SD-1.0
TITLE
SNT-8A-A-Carrier Tape
PH008-A-C-SD-1.0
No.
ANGLE
UNIT
mm
SII Semiconductor Corporation
12.5max.
9.0±0.3
Enlarged drawing in the central part
ø13±0.2
(60°)
(60°)
No. PH008-A-R-SD-1.0
SNT-8A-A-Reel
TITLE
No.
PH008-A-R-SD-1.0
5,000
QTY.
ANGLE
UNIT
mm
SII Semiconductor Corporation
0.52
2
2.01
0.52
1
0.2
0.3
1.
2.
(0.25 mm min. / 0.30 mm typ.)
(1.96 mm ~ 2.06 mm)
1.
2.
0.03 mm
3.
4.
SNT
1. Pay attention to the land pattern width (0.25 mm min. / 0.30 mm typ.).
2. Do not widen the land pattern to the center of the package (1.96 mm to 2.06mm).
Caution 1. Do not do silkscreen printing and solder printing under the mold resin of the package.
2. The thickness of the solder resist on the wire pattern under the package should be 0.03 mm
or less from the land pattern surface.
3. Match the mask aperture size and aperture position with the land pattern.
4. Refer to "SNT Package User's Guide" for details.
(0.25 mm min. / 0.30 mm typ.)
(1.96 mm ~ 2.06 mm)
1.
2.
SNT-8A-A
-Land Recommendation
TITLE
No.
No. PH008-A-L-SD-4.1
PH008-A-L-SD-4.1
ANGLE
UNIT
mm
SII Semiconductor Corporation
Disclaimers (Handling Precautions)
1. All the information described herein (product data, specifications, figures, tables, programs, algorithms and
application circuit examples, etc.) is current as of publishing date of this document and is subject to change without
notice.
2. The circuit examples and the usages described herein are for reference only, and do not guarantee the success of
any specific mass-production design.
SII Semiconductor Corporation is not responsible for damages caused by the reasons other than the products or
infringement of third-party intellectual property rights and any other rights due to the use of the information described
herein.
3. SII Semiconductor Corporation is not responsible for damages caused by the incorrect information described herein.
4. Take care to use the products described herein within their specified ranges. Pay special attention to the absolute
maximum ratings, operation voltage range and electrical characteristics, etc.
SII Semiconductor Corporation is not responsible for damages caused by failures and/or accidents, etc. that occur
due to the use of products outside their specified ranges.
5. When using the products described herein, confirm their applications, and the laws and regulations of the region or
country where they are used and verify suitability, safety and other factors for the intended use.
6. When exporting the products described herein, comply with the Foreign Exchange and Foreign Trade Act and all
other export-related laws, and follow the required procedures.
7. The products described herein must not be used or provided (exported) for the purposes of the development of
weapons of mass destruction or military use. SII Semiconductor Corporation is not responsible for any provision
(export) to those whose purpose is to develop, manufacture, use or store nuclear, biological or chemical weapons,
missiles, or other military use.
8. The products described herein are not designed to be used as part of any device or equipment that may affect the
human body, human life, or assets (such as medical equipment, disaster prevention systems, security systems,
combustion control systems, infrastructure control systems, vehicle equipment, traffic systems, in-vehicle equipment,
aviation equipment, aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle
use or other uses. Do not use those products without the prior written permission of SII Semiconductor Corporation.
Especially, the products described herein cannot be used for life support devices, devices implanted in the human
body and devices that directly affect human life, etc.
Prior consultation with our sales office is required when considering the above uses.
SII Semiconductor Corporation is not responsible for damages caused by unauthorized or unspecified use of our
products.
9. Semiconductor products may fail or malfunction with some probability.
The user of these products should therefore take responsibility to give thorough consideration to safety design
including redundancy, fire spread prevention measures, and malfunction prevention to prevent accidents causing
injury or death, fires and social damage, etc. that may ensue from the products' failure or malfunction.
The entire system must be sufficiently evaluated and applied on customer's own responsibility.
10. The products described herein are not designed to be radiation-proof. The necessary radiation measures should be
taken in the product design by the customer depending on the intended use.
11. The products described herein do not affect human health under normal use. However, they contain chemical
substances and heavy metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips
may be sharp. Take care when handling these with the bare hands to prevent injuries, etc.
12. When disposing of the products described herein, comply with the laws and ordinances of the country or region where
they are used.
13. The information described herein contains copyright information and know-how of SII Semiconductor Corporation.
The information described herein does not convey any license under any intellectual property rights or any other
rights belonging to SII Semiconductor Corporation or a third party. Reproduction or copying of the information
described herein for the purpose of disclosing it to a third-party without the express permission of SII Semiconductor
Corporation is strictly prohibited.
14. For more details on the information described herein, contact our sales office.
1.0-2016.01
www.sii-ic.com
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