SD4840 [SILAN]
CURRENT MODE PWM CONTROLLER WITH BUILT-IN HIGH VOLTAGE MOSFET;型号: | SD4840 |
厂家: | SILAN MICROELECTRONICS JOINT-STOCK |
描述: | CURRENT MODE PWM CONTROLLER WITH BUILT-IN HIGH VOLTAGE MOSFET 高压 |
文件: | 总11页 (文件大小:759K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SD4840/4841/4842/4843/4844
CURRENT MODE PWM CONTROLLER WITH BUILT-IN HIGH VOLTAGE
MOSFET
DESCRIPTION
SD4840/4841/4842/4843/4844 is a current mode PWM controller
with low standby power and low start current for power switch. In
standby mode, the circuit enters burst mode to reduce the standby
power dissipation.
The switch frequency is 67KHz with ±2.5 KHz jitter frequency for
low EMI.
The stress on transformer during power on is reduced by the built-
in 15ms soft start circuit to avoid the saturation of transformer.
SD4840/4841/4842/4843/4844 includes under voltage lock-out,
over voltage protection, leading edge blanking, over current
protection and the temperature protection. The circuit will restart
automatically until the system is normal after the protection is
active.
FEATURES
APPLICATIONS
* Lower start-up current (Typ.6μA)
* Frequency jitter for low EMI
* Overcurrent protection
* Overvoltage protection
* Undervoltage lockout
* Switch power
* Built-in temperature protection
* Built-in high voltage MOSFET
* Auto restart mode
* Built-in soft start
* Burst mode operation
* Cycle by cycle current limit
ORDERING INFORMATION
Part No.
Package
Marking
SD4840P67K65
SD4841P67K65
SD4842P67K65
SD4843P67K65
SD4844P67K65
SD4840P67K65
SD4841P67K65
SD4842P67K65
SD4843P67K65
SD4844P67K65
DIP-8-300-2.54
Note: P denotes it is available in DIP8 package, 67k denotes 67KHz, and 65 denotes withstand voltage is 650V.
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
REV:1.2
2008.12.17
Http: //www.silan.com.cn
Page 1 of 11
SD4840/4841/4842/4843/4844
TYPICAL OUPUT POWER CAPABILITY
190~265VAC
85~265VAC
Device
Adapter
7W
Open
9W
Adapter
5W
Open
7.2W
12W
14W
15W
18W
SD4840P67K65
SD4841P67K65
SD4842P67K65
SD4843P67K65
SD4844P67K65
10W
14W
17W
19W
21W
8W
12W
10W
12W
14W
14W
16W
BLOCK DIAGRAM
ABSOLUTE MAXIMUM RATING
Characteristics
Drain-Gate Voltage (RGS=1MΩ)
Gate-Source (GND) Voltage
Symbol
Rating
Unit
V
V
DGR
650
±30
4
V
GS
V
SD4840P67K65
SD4841P67K65
SD4842P67K65
SD4843P67K65
SD4844P67K65
6
8
Drain Current Pulse (note1)
I
A
DM
11
14
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2008.12.17
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Page 2 of 11
SD4840/4841/4842/4843/4844
Characteristics
SD4840P67K65
Symbol
Rating
1
Unit
SD4841P67K65
SD4842P67K65
SD4843P67K65
SD4844P67K65
SD4840P67K65
SD4841P67K65
SD4842P67K65
SD4843P67K65
SD4844P67K65
1.5
2
Continuous Drain Current
(T =25°C)
I
A
D
amb
3
4
15
30
68
140
200
21
Signal Pulse Avalanche
Energy(note 2)
E
AS
mJ
VCC,MAX
Power Supply Voltage
Analog Input Voltage
V
V
V
-0.3~ V
1.5
FB
SD
P
W
D
Total Power Dissipation
Darting
0.017
+160
W/°C
°C
Operating Junction Temperature
Operating Temperature
Storage Temperature
T
J
T
T
-25~ +85
-55~+150
°C
amb
°C
STG
Note: 1. Pulse width is limited by maximum junction temperature.
2. L=51mH, starting T =25°C
j
ELECTRICAL CHARACTERISTICS (sense MOSFET part, unless otherwise specified, Tamb=25°c)
Characteristics
Symbol
BV
Test conditions
=0V, I =50μA
Min.
650
--
Typ.
--
Max.
--
Unit
V
Drain-Source Breakdown Voltage
V
V
V
DSS
GS
D
=Max. V =0V
--
50
μA
DS
GS
Zero Gate Voltage Drain Current
I
DSS
=0.8Max. V =0V
DS
GS
--
--
200
μA
T
=125°C
amb
SD4840P67K65
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
14.0
8.0
5.0
4.0
3.0
210
250
550
640
840
18
16.8
9.6
6.0
4.8
3.6
--
SD4841P67K65
SD4842P67K65
SD4843P67K65
SD4844P67K65
SD4840P67K65
SD4841P67K65
SD4842P67K65
SD4843P67K65
SD4844P67K65
SD4840P67K65
SD4841P67K65
SD4842P67K65
SD4843P67K65
SD4844P67K65
Static Drain-
Source On
Resistance
R
V
=10V, I =0.5A
Ω
DS(ON)
GS
D
--
Input
C
iss
V
GS
=0V, V =25V, f=1MHz
pF
DS
--
Capacitance
--
--
--
25
--
Output
Coss
VGS=0V, VDS=25V, f=1MHz
pF
38
--
Capacitance
40
--
44
--
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
REV:1.2
2008.12.17
Http: //www.silan.com.cn
Page 3 of 11
SD4840/4841/4842/4843/4844
Characteristics
SD4840P67K65
Symbol
Test conditions
Min.
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ.
8
Max.
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Unit
SD4841P67K65
SD4842P67K65
SD4843P67K65
SD4844P67K65
SD4840P67K65
SD4841P67K65
SD4842P67K65
SD4843P67K65
SD4844P67K65
SD4840P67K65
SD4841P67K65
SD4842P67K65
SD4843P67K65
SD4844P67K65
SD4840P67K65
SD4841P67K65
SD4842P67K65
SD4843P67K65
SD4844P67K65
SD4840P67K65
SD4841P67K65
SD4842P67K65
SD4843P67K65
SD4844P67K65
10
17
30
40
10
12
20
33
40
3
Reverse
Transfer
Crss
VGS=0V, VDS=25V, f=1MHz
pF
Capacitance
Turn On Delay
Time
td(ON)
VDD=0.5BVDSS, ID=25mA
VDD=0.5BVDSS, ID=25mA
VDD=0.5BVDSS, ID=25mA
VDD=0.5BVDSS, ID=25mA
nS
nS
nS
nS
4
tr
td(OFF)
tf
Rise Time
15
19
25
27
30
55
70
90
8
Turn Off Delay
Time
10
25
32
42
Fall Time
ELECTRICAL CHARACTERISTICS (unless otherwise specified, Tamb=25°c)
Characteristics
Undervoltage Section
Start Threshold Voltage
Stop Threshold Voltage
Oscillator Section
Symbol
Test conditions
Min.
Typ.
Max.
Unit
Vstart
Vstop
11
7
12
8
13
9
V
V
Oscillate Frequency
FOSC
FMOD
61
67
73
KHz
KHz
%
Frequency Jitter
±1.5
±2.0
±2.5
Frequency Change With
Temperature
--
25°C≤Tamb≤+85°C
0V≤VFB≤3V
--
±5
77
±10
82
Maximum Duty Cycle
Feedback Section
Dmax
72
%
Feedback Source Current
Shutdown Feedback Voltage
Shutdown Delay Current
IFB
0.7
5.5
3.5
0.9
6.0
5.0
1.1
6.5
6.5
mA
V
VSD
Idelay 5V≤VFB≤VSD
μA
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Page 4 of 11
SD4840/4841/4842/4843/4844
Characteristics
Built-in Soft Start Time
Current Limit
Symbol
Test conditions
VFB=4V
Min.
Typ.
Max.
Unit
ts
10
15
20
ms
SD4840P67K65
0.53
0.67
0.80
1.10
1.35
0.60
0.75
0.90
1.20
1.50
0.67
0.83
1.00
1.30
1.65
SD4841P67K65
SD4842P67K65
SD4843P67K65
SD4844P67K65
Peak Current
Limit
Iover
Max. inductor current
A
Burst mode
Burst Mode High Voltage
Burst Mode Low Voltage
Protection Section
VBURH
VBURL
0.4
0.5
0.6
V
V
0.25
0.35
0.45
Overvoltage Protection
Thermal Shutdown
Vovp
Tsd
18
19
140
--
--
--
--
V
125
200
°C
ns
Leading-edge Blanking Time
Total Standby Current
Start Current
TLEB
Istart
Iop
VCC=11V
VCC=12V
--
1
6
3
20
5
μA
Supply Current (Control Part)
mA
PIN CONFIGURATION
PIN DESCRIPTION
Pin No.
Pin Name
SGND
PGND
VCC
I/O
-
Function description
Ground for control part.
1
2
-
MOSFET Ground.
Power supply pin.
Feedback input pin.
Not connected.
Drain pins.
3
-
4
FB
I/O
-
5
NC
6,7,8
Drain
O
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
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SD4840/4841/4842/4843/4844
FUNCTION DESCRIPTION
SD4840/4841/4842/4843/4844 is designed for off-line SMPS, consisting of high voltage MOSFET, optimized
gate driver and current mode PWM controller which includes frequency oscillator and various protections such as
undervoltage lockout, overvoltage protection, overcurrent protection and overtemperature protection. Frequency
jitter generated from oscillator is used to lower EMI and built-in soft start is used for reducing transformer stress
when the circuit is powered on. Burst mode is adopted during light load to lower standby power dissipation, and
function of lead edge blanking eliminates the MOSFET error shutdown caused by interference through
minimizing MOSFET turning on time. Few peripheral components are needed for higher efficiency and higher
reliability and it is suitable for flyback converter and forward converter.
1. Under Voltage Lockout and Self-Start
At the beginning, the capacitor connected to pin VCC is charged via start resistor by high voltage AC and the
circuit start to work if voltage at Vcc is 12V. The output is shutdown if there is any protection during normal
operation and Vcc is decreased because of powering of auxiliary winding. The whole control circuit is shutdown
if voltage at Vcc is 8V below to lower current dissipation and the capacitor is recharged for restarting.
2. Built-In Soft Start Circuit
In order to decrease transformer stress and to prevent its saturation during power on, it is recommended to
increase peak current value of primary winding slowly by increasing feedback voltage slowly. After about 15ms,
the soft start is completed and it has no effect on normal operation.
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SD4840/4841/4842/4843/4844
3. Frequency Jitter
The oscillation frequency is kept changed for low EMI and decreasing radiation on one frequency. The oscillation
frequency changes within a very small range to simplify EMI design. The rule of frequency changing: change
from 65KHz to 69KHz.
4. Light Load Mode
Working in this mode to reduce power dissipation. It works normally when FB is 500mV above and during
350mV<FB <500mV, there are two different conditions: when FB changes from low to high, there is no action for
switch and it is the same with condition of FB lower than 350mV; the other is that FB changes form high to low,
comparison value is increased for increasing turning on time to decrease switch loss.
For this mode, during FB changes form high to low, the output voltage increases (increasing speed is decided
by load) because of the high comparison value to decrease FB until it is 350mV below; when FB <350mV, there
is no action for switch and output voltage decrease (decreasing speed is also decided by load) to increase FB.
This is repeated to decrease action of switch for lower power dissipation.
5. Leading Edge Blanking
For this current-controlled circuit, there is pulse peak current during the transient of switch turning on and there is
an error operation if the current is sampled during this time. And leading edge blanking is adopted to eliminate
this error operation. The output of PWM comparator is used for controlling shutdown after the leading edge
blanking if there is any output drive.
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SD4840/4841/4842/4843/4844
6. Over Voltage Protection
The output is shutdown if voltage at Vcc exceeds the threshold and this state is kept until the circuit is powered
on reset.
7. Overload Protection
FB voltage increase if there is overload and the output is shutdown when FB voltage is up to the feedback
shutdown voltage. This state is kept until the circuit is powered on reset.
8. Peak Current Limit Cycle By Cycle
During each cycle, the peak current value is decided by the comparison value of the comparator, which will not
exceed the peak current limited value to guarantee the current on MOSFET will not be more than the rating
current. The output power will not increase if the current reaches the peak value to limit the max. output power.
The output voltage decreases and FB voltage increases if there is overload and corresponding protection occurs.
9. Abnormal Over Current Protection
That secondary diode is short, or the transformer is short will cause this event. At this time, once it is over current
in spite of the leading edge blanking (L.E.B) time, protection will begin after 350nS, and is active for every cycle.
When the voltage on the current sense resistor is 1.6V, this protection will occur and the output is shut down.
This state is kept until the under voltage occurs, and the circuit will start.
10. Thermal Shutdown
If the circuit is over temperature, the over temperature protection will shut down the output to prevent the circuit
from damage. This state is kept until the under voltage occurs, and the circuit will start.
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
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2008.12.17
Http: //www.silan.com.cn
Page 8 of 11
SD4840/4841/4842/4843/4844
TYPICAL APPLICATION CIRCUIT
Note:
1. The circuit and parameters are for reference only, please set the parameters of the real application
circuit based on the real test.
2. Better not to place VCC winding as inner coil.
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
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2008.12.17
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SD4840/4841/4842/4843/4844
PACKAGE OUTLINE
DIP-8-300-2.54
UNIT: mm
MOS DEVICES OPERATE NOTES:
Electrostatic charges may exist in many things. Please take following preventive measures to prevent effectively
the MOS electric circuit as a result of the damage which is caused by discharge:
z
z
z
z
The operator must put on wrist strap which should be earthed to against electrostatic.
Equipment cases should be earthed.
All tools used during assembly, including soldering tools and solder baths, must be earthed.
MOS devices should be packed in antistatic/conductive containers for transportation.
Note:Silan reserves the right to make changes without notice in this specification for the improvement of the design and performance.
Silan will supply the best possible product for customers.
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
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2008.12.17
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Page 10 of 11
SD4840/4841/4842/4843/4844
Attachment
Revision History
Data
REV
Description
Page
2008.07.07
2008.11.06
2008.12.17
1.0
1.1
1.2
Original
Modify the “BLOCK DIAGRAM” and “FUNCTION DESCRIPTION”
Add the note for “TYPICAL APPLICATION CIRCUIT”
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
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2008.12.17
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Page 11 of 11
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