SD4843P [SILAN]

CURRENT MODE PWM CONTROLLER WITH BUILT-IN HIGH VOLTAGE MOSFET;


型号：	SD4843P
厂家：	SILAN MICROELECTRONICS JOINT-STOCK
描述：	CURRENT MODE PWM CONTROLLER WITH BUILT-IN HIGH VOLTAGE MOSFET 高压
文件：	总11页 (文件大小：759K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SD4840/4841/4842/4843/4844

CURRENT MODE PWM CONTROLLER WITH BUILT-IN HIGH VOLTAGE

MOSFET

DESCRIPTION

SD4840/4841/4842/4843/4844 is a current mode PWM controller

with low standby power and low start current for power switch. In

standby mode, the circuit enters burst mode to reduce the standby

power dissipation.

The switch frequency is 67KHz with ±2.5 KHz jitter frequency for

low EMI.

The stress on transformer during power on is reduced by the built-

in 15ms soft start circuit to avoid the saturation of transformer.

SD4840/4841/4842/4843/4844 includes under voltage lock-out,

over voltage protection, leading edge blanking, over current

protection and the temperature protection. The circuit will restart

automatically until the system is normal after the protection is

active.

FEATURES

APPLICATIONS

* Lower start-up current (Typ.6μA)

* Frequency jitter for low EMI

* Overcurrent protection

* Overvoltage protection

* Undervoltage lockout

* Switch power

* Built-in temperature protection

* Built-in high voltage MOSFET

* Auto restart mode

* Built-in soft start

* Burst mode operation

* Cycle by cycle current limit

ORDERING INFORMATION

Part No.

Package

Marking

SD4840P67K65

SD4841P67K65

SD4842P67K65

SD4843P67K65

SD4844P67K65

SD4840P67K65

SD4841P67K65

SD4842P67K65

SD4843P67K65

SD4844P67K65

DIP-8-300-2.54

Note: P denotes it is available in DIP8 package, 67k denotes 67KHz, and 65 denotes withstand voltage is 650V.

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

REV:1.2

2008.12.17

Http: //www.silan.com.cn

Page 1 of 11

SD4840/4841/4842/4843/4844

TYPICAL OUPUT POWER CAPABILITY

190~265VAC

85~265VAC

Device

Adapter

Open

Adapter

Open

7.2W

12W

14W

15W

18W

SD4840P67K65

SD4841P67K65

SD4842P67K65

SD4843P67K65

SD4844P67K65

10W

14W

17W

19W

21W

12W

10W

12W

14W

16W

BLOCK DIAGRAM

ABSOLUTE MAXIMUM RATING

Characteristics

Drain-Gate Voltage (RGS=1MΩ)

Gate-Source (GND) Voltage

Symbol

Rating

Unit

DGR

650

±30

SD4840P67K65

SD4841P67K65

SD4842P67K65

SD4843P67K65

SD4844P67K65

Drain Current Pulse (note1)

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SD4840/4841/4842/4843/4844

Characteristics

SD4840P67K65

Symbol

Rating

Unit

SD4841P67K65

SD4842P67K65

SD4843P67K65

SD4844P67K65

SD4840P67K65

SD4841P67K65

SD4842P67K65

SD4843P67K65

SD4844P67K65

1.5

Continuous Drain Current

(T =25°C)

amb

140

200

Signal Pulse Avalanche

Energy(note 2)

V_CC,MAX

Power Supply Voltage

Analog Input Voltage

-0.3~ V

1.5

Total Power Dissipation

Darting

0.017

+160

W/°C

°C

Operating Junction Temperature

Operating Temperature

Storage Temperature

-25~ +85

-55~+150

°C

amb

°C

STG

Note: 1. Pulse width is limited by maximum junction temperature.

2. L=51mH, starting T =25°C

ELECTRICAL CHARACTERISTICS (sense MOSFET part, unless otherwise specified, Tamb=25°c)

Characteristics

Symbol

Test conditions

=0V, I =50μA

Min.

650

Typ.

Max.

Unit

Drain-Source Breakdown Voltage

DSS

=Max. V =0V

μA

Zero Gate Voltage Drain Current

DSS

=0.8Max. V =0V

200

μA

=125°C

amb

SD4840P67K65

14.0

8.0

5.0

4.0

3.0

210

250

550

640

840

16.8

9.6

6.0

4.8

3.6

SD4841P67K65

SD4842P67K65

SD4843P67K65

SD4844P67K65

SD4840P67K65

SD4841P67K65

SD4842P67K65

SD4843P67K65

SD4844P67K65

SD4840P67K65

SD4841P67K65

SD4842P67K65

SD4843P67K65

SD4844P67K65

Static Drain-

Source On

Resistance

=10V, I =0.5A

DS(ON)

Input

iss

=0V, V =25V, f=1MHz

Capacitance

Output

Coss

VGS=0V, VDS=25V, f=1MHz

Capacitance

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Page 3 of 11

SD4840/4841/4842/4843/4844

Characteristics

SD4840P67K65

Symbol

Test conditions

Min.

Typ.

Max.

Unit

SD4841P67K65

SD4842P67K65

SD4843P67K65

SD4844P67K65

SD4840P67K65

SD4841P67K65

SD4842P67K65

SD4843P67K65

SD4844P67K65

SD4840P67K65

SD4841P67K65

SD4842P67K65

SD4843P67K65

SD4844P67K65

SD4840P67K65

SD4841P67K65

SD4842P67K65

SD4843P67K65

SD4844P67K65

SD4840P67K65

SD4841P67K65

SD4842P67K65

SD4843P67K65

SD4844P67K65

Reverse

Transfer

Crss

VGS=0V, VDS=25V, f=1MHz

Capacitance

Turn On Delay

Time

td(ON)

VDD=0.5BVDSS, ID=25mA

td(OFF)

Rise Time

Turn Off Delay

Time

Fall Time

ELECTRICAL CHARACTERISTICS (unless otherwise specified, Tamb=25°c)

Characteristics

Undervoltage Section

Start Threshold Voltage

Stop Threshold Voltage

Oscillator Section

Symbol

Test conditions

Min.

Typ.

Max.

Unit

Vstart

Vstop

Oscillate Frequency

FOSC

FMOD

KHz

Frequency Jitter

±1.5

±2.0

±2.5

Frequency Change With

Temperature

25°C≤Tamb≤+85°C

0V≤VFB≤3V

±5

±10

Maximum Duty Cycle

Feedback Section

Dmax

Feedback Source Current

Shutdown Feedback Voltage

Shutdown Delay Current

IFB

0.7

5.5

3.5

0.9

6.0

5.0

1.1

6.5

VSD

Idelay 5V≤VFB≤VSD

μA

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SD4840/4841/4842/4843/4844

Characteristics

Built-in Soft Start Time

Current Limit

Symbol

Test conditions

VFB=4V

Min.

Typ.

Max.

Unit

SD4840P67K65

0.53

0.67

0.80

1.10

1.35

0.60

0.75

0.90

1.20

1.50

0.67

0.83

1.00

1.30

1.65

SD4841P67K65

SD4842P67K65

SD4843P67K65

SD4844P67K65

Peak Current

Limit

Iover

Max. inductor current

Burst mode

Burst Mode High Voltage

Burst Mode Low Voltage

Protection Section

VBURH

VBURL

0.4

0.5

0.6

0.25

0.35

0.45

Overvoltage Protection

Thermal Shutdown

Vovp

Tsd

140

125

200

°C

Leading-edge Blanking Time

Total Standby Current

Start Current

TLEB

Istart

Iop

VCC=11V

VCC=12V

μA

Supply Current (Control Part)

PIN CONFIGURATION

PIN DESCRIPTION

Pin No.

Pin Name

SGND

PGND

VCC

I/O

Function description

Ground for control part.

MOSFET Ground.

Power supply pin.

Feedback input pin.

Not connected.

Drain pins.

I/O

6,7,8

Drain

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SD4840/4841/4842/4843/4844

FUNCTION DESCRIPTION

SD4840/4841/4842/4843/4844 is designed for off-line SMPS, consisting of high voltage MOSFET, optimized

gate driver and current mode PWM controller which includes frequency oscillator and various protections such as

undervoltage lockout, overvoltage protection, overcurrent protection and overtemperature protection. Frequency

jitter generated from oscillator is used to lower EMI and built-in soft start is used for reducing transformer stress

when the circuit is powered on. Burst mode is adopted during light load to lower standby power dissipation, and

function of lead edge blanking eliminates the MOSFET error shutdown caused by interference through

minimizing MOSFET turning on time. Few peripheral components are needed for higher efficiency and higher

reliability and it is suitable for flyback converter and forward converter.

1. Under Voltage Lockout and Self-Start

At the beginning, the capacitor connected to pin VCC is charged via start resistor by high voltage AC and the

circuit start to work if voltage at Vcc is 12V. The output is shutdown if there is any protection during normal

operation and Vcc is decreased because of powering of auxiliary winding. The whole control circuit is shutdown

if voltage at Vcc is 8V below to lower current dissipation and the capacitor is recharged for restarting.

2. Built-In Soft Start Circuit

In order to decrease transformer stress and to prevent its saturation during power on, it is recommended to

increase peak current value of primary winding slowly by increasing feedback voltage slowly. After about 15ms,

the soft start is completed and it has no effect on normal operation.

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SD4840/4841/4842/4843/4844

3. Frequency Jitter

The oscillation frequency is kept changed for low EMI and decreasing radiation on one frequency. The oscillation

frequency changes within a very small range to simplify EMI design. The rule of frequency changing: change

from 65KHz to 69KHz.

4. Light Load Mode

Working in this mode to reduce power dissipation. It works normally when FB is 500mV above and during

350mV<FB <500mV, there are two different conditions: when FB changes from low to high, there is no action for

switch and it is the same with condition of FB lower than 350mV; the other is that FB changes form high to low,

comparison value is increased for increasing turning on time to decrease switch loss.

For this mode, during FB changes form high to low, the output voltage increases (increasing speed is decided

by load) because of the high comparison value to decrease FB until it is 350mV below; when FB <350mV, there

is no action for switch and output voltage decrease (decreasing speed is also decided by load) to increase FB.

This is repeated to decrease action of switch for lower power dissipation.

5. Leading Edge Blanking

For this current-controlled circuit, there is pulse peak current during the transient of switch turning on and there is

an error operation if the current is sampled during this time. And leading edge blanking is adopted to eliminate

this error operation. The output of PWM comparator is used for controlling shutdown after the leading edge

blanking if there is any output drive.

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SD4840/4841/4842/4843/4844

6. Over Voltage Protection

The output is shutdown if voltage at Vcc exceeds the threshold and this state is kept until the circuit is powered

on reset.

7. Overload Protection

FB voltage increase if there is overload and the output is shutdown when FB voltage is up to the feedback

shutdown voltage. This state is kept until the circuit is powered on reset.

8. Peak Current Limit Cycle By Cycle

During each cycle, the peak current value is decided by the comparison value of the comparator, which will not

exceed the peak current limited value to guarantee the current on MOSFET will not be more than the rating

current. The output power will not increase if the current reaches the peak value to limit the max. output power.

The output voltage decreases and FB voltage increases if there is overload and corresponding protection occurs.

9. Abnormal Over Current Protection

That secondary diode is short, or the transformer is short will cause this event. At this time, once it is over current

in spite of the leading edge blanking (L.E.B) time, protection will begin after 350nS, and is active for every cycle.

When the voltage on the current sense resistor is 1.6V, this protection will occur and the output is shut down.

This state is kept until the under voltage occurs, and the circuit will start.

10. Thermal Shutdown

If the circuit is over temperature, the over temperature protection will shut down the output to prevent the circuit

from damage. This state is kept until the under voltage occurs, and the circuit will start.

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

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2008.12.17

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SD4840/4841/4842/4843/4844

TYPICAL APPLICATION CIRCUIT

Note:

1. The circuit and parameters are for reference only, please set the parameters of the real application

circuit based on the real test.

2. Better not to place VCC winding as inner coil.

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2008.12.17

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SD4840/4841/4842/4843/4844

PACKAGE OUTLINE

DIP-8-300-2.54

UNIT: mm

MOS DEVICES OPERATE NOTES:

Electrostatic charges may exist in many things. Please take following preventive measures to prevent effectively

the MOS electric circuit as a result of the damage which is caused by discharge:

The operator must put on wrist strap which should be earthed to against electrostatic.

Equipment cases should be earthed.

All tools used during assembly, including soldering tools and solder baths, must be earthed.

MOS devices should be packed in antistatic/conductive containers for transportation.

Note：Silan reserves the right to make changes without notice in this specification for the improvement of the design and performance.

Silan will supply the best possible product for customers.

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

REV:1.2

2008.12.17

Http: //www.silan.com.cn

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SD4840/4841/4842/4843/4844

Attachment

Revision History

Data

REV

Description

Page

2008.07.07

2008.11.06

2008.12.17

1.0

1.1

1.2

Original

Modify the “BLOCK DIAGRAM” and “FUNCTION DESCRIPTION”

Add the note for “TYPICAL APPLICATION CIRCUIT”

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2008.12.17

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Page 11 of 11

SD4843P [SILAN]

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