AN273 [SILICON]

GR-909 TESTING WITH THE Si321X PROSLIC㈢; WITH THE Si321X PROSLIC㈢ GR- 909测试
AN273
型号: AN273
厂家: SILICON    SILICON
描述:

GR-909 TESTING WITH THE Si321X PROSLIC㈢
WITH THE Si321X PROSLIC㈢ GR- 909测试

测试
文件: 总8页 (文件大小:214K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
AN273  
GR-909 TESTING WITH THE Si321X PROSLIC®  
1. Introduction  
This document describes how line fault testing (such as GR-909) may be implemented using the Si321X family of  
ProSLIC devices. Demonstration code for each test is available.  
2. GR-909 Metallic Loop Tests  
The five metallic loop tests described by GR-909 are as follows:  
1. Hazardous Potential Test  
Under any condition, the following must be detected  
>50 V  
ac voltage from TIP-GND or RING-GND  
RMS  
>135 V dc voltage from TIP-GND or RING-GND  
2. Foreign Voltage Test  
Under any condition, the following voltages not generated by the SLIC must be detected  
>10 V  
ac from TIP-GND or RING-GND  
RMS  
>6 V dc from TIP-GND or RING-GND  
3. Resistive Faults Test  
Detect the following resistive line faults  
<150 kΩ TIP-RING, TIP-GND, or RING-GND  
4. Receiver Off-hook Test  
Distinguish between resistive fault <150 kΩ and an off-hook receiver  
5. Ringing Equivalency Number Test  
Determine the REN (Ringer Equivalency Number) of the terminating receiver is between 0.175 REN and  
5 REN. Reject if outside that range.  
Each of these tests can be implemented on the Si321x devices. Table 1 enumerates the test cases, the measure-  
ment method implemented, and the failing criteria.  
Table 1. GR-909 Metallic Loop Tests  
GR-909 Test  
Test Description  
Linefeed State  
Measurement  
Failure Criteria  
1
Hazardous Potential  
OPEN  
V
and V  
> 50 Vrms ac  
> 135 V dc  
TIP  
RING  
2
Foreign Voltage  
OPEN  
V
and V  
> 10 Vrms ac  
> 6 V dc  
TIP  
RING  
3
4
5
Resistive Faults  
Offhook  
TIP-OPEN, RING-OPEN  
TIP-OPEN  
R
, R , R  
>150 kΩ  
Detect/No-detect  
> 5 REN  
TG RG TR  
R
TR  
REN  
RINGING  
PQ2  
Rev. 0.1 2/06  
Copyright © 2006 by Silicon Laboratories  
AN273  
AN273  
3. Tests 1 & 2: Hazardous Potential and Foreign Voltages  
These tests employ the same measurement technique; so, they can be implemented as a single test to save time,  
assuming that the source of the hazardous potential is always foreign (not generated by the SLIC). The exception  
would be if the user implements high-voltage ringing on a short loop, which may result in a ring signal that delivers  
>50 V  
to the load and/or a dc potential >135 V between ring bursts. The user must be cognizant of this possi-  
RMS  
bility.  
The dc voltage on TIP and RING can be directly read from Direct Registers 80 and 81 while in the OPEN linefeed  
state; however, in the presence of a foreign ac voltage, it is very inaccurate. If a large enough sample set is taken  
at timed intervals to reconstruct an ac voltage at a minimum of 20 Hz, both the ac and dc voltages are quantified.  
If N samples are taken at fixed intervals, the ac and dc voltages on TIP (or RING) may be calculated as follows:  
N 1  
1
N
---  
VTIP.DC  
=
VTIP(n)  
n = 0  
Equation 1.  
N 1  
1
N
2
---  
VTIP.AC  
=
(VTIP(n) VTIP.DC)  
n = 0  
Equation 2.  
1.5 V  
1.5 V  
RST  
TIP  
RSH*  
RSR  
RING  
*RSH installation is optional  
Figure 1. Si321X OPEN Linefeed State DC Equivalent Circuit  
Refer to the demonstration code for an example of implementing ac voltage measurement.  
2
Rev. 0.1  
AN273  
4. Test 3: Resistive Faults  
Since the small change in loop or longitudinal currents introduced by high impedance line faults may be too small  
to detect with the Si321x current monitoring, the large source impedance of the open terminal in the TIP-OPEN and  
RING-OPEN linefeed states can be utilized to force a large voltage change on the open terminal that can easily be  
detected. To measure resistive faults to GND (either TIP-GND or RING-GND), it is necessary to install the optional  
shunt resistor, RSH, to provide a small loop current reference. When a fault to GND is present on the OPEN termi-  
nal, the longitudinal current is altered, and the impedance may be calculated.  
If R is not installed, resistive faults between TIP and RING can still be measured. However, faults from TIP-GND  
SH  
or RING-GND must be detected using a less accurate method, which will only account for gross faults (<30 kΩ).  
4.1. Condition 1: No Resistive Fault  
If no resistive faults are present, the voltage on the TIP lead while in the TIP-OPEN linefeed state and the voltage  
on the RING lead while in the RING-OPEN linefeed state is said to be at the critical voltage. It is necessary to iden-  
tify this because if a resistance is to be calculated as a function of the open terminal voltage, there are limiting volt-  
age values that result in an infinite resistance calculation. Though an infinite resistance is a valid measurement,  
software applications need to avoid making a calculation with an infinite result. By first identifying the voltage in  
which there are no line faults present, this calculation can be avoided. An equation for the critical voltage will be  
derived in the following sections. In a no-fault loop (see Figure 2), the following equations apply:  
VTIP = 1.5 V RST × ILOOP  
V
TIP VRING  
----------------------------------  
=
ILOOP  
RSH  
1.5 × RSH + RST × VRING  
------------------------------------------------------------------  
=
VTIP  
R
ST + RSH  
where I  
is the quiescent loop current flowing due to the shunt resistor added across TIP and RING; R is the  
ST  
LOOP  
TIP source impedance, and R is the resistor added to create the loop current. Table 2 shows the values for R ,  
SH  
ST  
R
, and R for the applicable linefeed states and BOM options.  
SR  
SH  
1.5 V  
RST  
TIP  
ILOOP  
RSH  
VOC  
RSR  
RING  
Figure 2. No-Fault TIP-OPEN DC Equivalent Circuit  
Rev. 0.1  
3
AN273  
Table 2. DC Source Resistances  
Resistor  
BOM Option  
Tip-Open  
200 kΩ  
340 kΩ  
160 Ω  
Ring-Open  
Open  
200 kΩ  
340 kΩ  
200 kΩ  
340 kΩ  
680 kΩ  
1 MΩ  
Standard  
High Voltage  
Standard  
160 Ω  
160 Ω  
200 kΩ  
340 kΩ  
680 kΩ  
1 MΩ  
R
ST  
SR  
SH  
R
R
High Voltage  
Standard  
160 Ω  
680 kΩ  
1 MΩ  
High Voltage  
4.2. Condition 2: TIP to RING Fault  
If a resistive fault from TIP to RING (R ) is present (see Figure 3), the loop impedance is reduced; thus, the loop  
TR  
current, I  
, increases, which results in a larger drop across R (TIP source impedance) and a more negative  
ST  
LOOP  
voltage at the TIP terminal that can easily be detected.  
From the voltages at TIP and RING, the resistive fault, R , may be calculated from the following equation:  
TR  
RSH × RST( VRING VTIP  
)
-------------------------------------------------------------------------------------------------------------  
=
RTR  
RSH(1.5 + VTIP ) RST( VRING VTIP  
)
Equation 3.  
Examining Equation 3, there is a single value for V  
in which the denominator is zero and R is infinite. This is  
TR  
TIP  
the critical voltage, V  
. Solving the denominator for V , the critical voltage is expressed as follows:  
TIP_CRIT  
TIP  
RST × VRING 1.5 × RSH  
--------------------------------------------------------------------  
=
VTIP_CRIT  
R
SH + RST  
Equation 4.  
1.5 V  
RST  
TIP  
RSH  
RTR  
VOC  
RSR  
RING  
Figure 3. TIP-OPEN Linefeed State with TIP to RING Resistive Fault  
4
Rev. 0.1  
AN273  
If R is not installed, a resistive fault present between TIP and RING will provide enough loop current to cause the  
SH  
voltage on the TIP lead to drop. Since all of the loop current passes through the resistive fault, R , the equation  
TR  
for R becomes as follows:  
TR  
RST( VRING VTIP  
)
--------------------------------------------------------  
=
RTR  
1.5 + VTIP  
Equation 5.  
4.3. Condition 3: TIP to GND Fault  
Resistive faults from TIP to GND are also detected in the TIP-OPEN linefeed state. In this case, the resistive fault  
from TIP to GND (R ) reduces the longitudinal current through R (see Figure 4); thus, a more positive voltage is  
TG  
ST  
present at the TIP terminal. Equation 6 describes R as a function of the TIP and RING voltages. Note that the  
TG  
denominator is the same as in the R calculation; so, the same critical voltage applies.  
TR  
1.5 V  
TIP  
RST  
RSH  
RTG  
VOC  
RSR  
RING  
Figure 4. TIP-OPEN Linefeed State with TIP to GND Resistive Fault  
From the voltages measured at TIP and RING, the resistive fault from TIP to GND may be expressed as follows:  
VTIP × RST × RSH  
-------------------------------------------------------------------------------------------------------------  
=
RTG  
RSH(1.5 + VTIP ) RST( VRING VTIP  
)
Equation 6.  
If R  
is not installed, a gross measurement of the impedance from TIP-GND may be made in the FORWARD  
SH  
ACTIVE linefeed state. By applying a high common-mode voltage to TIP and keeping the differential voltage to 0 V  
(V = 0), a resistive fault will form a voltage divider along with the 160 Ω output impedance of the TIP lead in the  
OC  
FORWARD ACTIVE state (see Figure 5).  
Rev. 0.1  
5
AN273  
If the common mode voltage is high enough and R is low enough, a detectable longitudinal current will result.  
TG  
VCM  
RST  
TIP  
RTG  
VOC + VCM  
RSR  
RING  
Figure 5. Forward Active State with TIP-GND Fault  
Since V  
is only limited by V , and the minimum detectable longitudinal current is 1.25 mA, the minimum  
CM  
BAT  
detectable fault is as follows:  
VBAT  
----------------------  
1.25 mA  
RTG  
=
+ RST  
Equation 7.  
of –74 V, the minimum detectable resistive fault is ~60 kΩ.  
For a typical V  
BAT  
4.4. Condition 4: RING to GND Fault  
Resistive faults from RING to GND are also detected in the same manner as the TIP to GND case, except the line-  
feed is now in the RING-OPEN state (see Figure 6). As before, the addition of the resistive fault, R , results in an  
TG  
increased voltage at the RING terminal.  
TIP  
VOC  
RST  
RSH  
1.5 V  
RSR  
RING  
RRG  
Figure 6. RING-OPEN Linefeed State with RING to GND Resistive Fault  
From the voltages measured at TIP and RING, the resistive fault from RING to GND may be expressed as:  
VRING × RSR × RSH  
------------------------------------------------------------------------------------------------------------------  
=
RRG  
RSH(1.5 + VRING ) RSR( VTIP VRING  
)
Equation 8.  
If R is not installed, the RING-GND impedance is measured just as the TIP-GND impedance was measured (see  
SH  
Equation 7).  
6
Rev. 0.1  
AN273  
5. Test 4: Receiver Off-Hook Test  
GR-909 requires that the SLIC be able to differentiate between an off hook handset and a resistive fault. The dc  
impedance presented to the SLIC by a typical telephone varies with applied voltage; therefore, this nonlinearity  
may be exploited to determine whether a telephone is present.  
By measuring the TIP lead in the TIP-OPEN linefeed state at two V settings, the two dc impedances R (refer  
OC  
TR  
to Equation 3) may be compared. If these two measurements differ by more than ~50% and they are within the  
expected range, an off hook telephone may be present. If a resistive fault is present, the variation will be within the  
resistance measurement accuracy, typically 10–25%.  
This test may be performed with or without R installed. If R is not installed, refer to Equation 5 to calculate  
SH  
SH  
R
.
TR  
5.1. Test 5: REN Test  
The Si321X can detect relatively small capacitive loads on the line. Line capacitance can be measured by either  
measuring the time constant of a decaying voltage on RING when in the OPEN mode (single-slope conversion) or  
by detecting longitudinal current when a subthreshold ring signal is applied. From the measured loop capacitance,  
the REN load may be estimated to within ± 0.5 REN.  
5.1.1. Single-Slope Conversion  
After charging the RING lead to V  
in the FORWARD ACTIVE linefeed state, if the linefeed state is switched to  
RING  
the OPEN state, the voltages between the TIP and RING leads will discharge through their series output resistance  
(see Figure 1). By measuring the time delay from V = upper threshold to V = lower threshold, the capaci-  
RING  
RING  
tance can be calculated and the REN load estimated. This is ideal for detecting very small REN loads.  
Because high REN loads present such a large capacitance and, therefore, very large time constants, it may be  
more advantageous to implement a subthreshold ringing method. It is only recommended that the single-slope  
method be used for loads less than 0.75 REN.  
5.1.2. Subthreshold Ringing Method  
The best method for estimating REN load when the load is >0.75 REN is by applying a small amplitude ring signal  
to the line and correlating the power dissipated in the linefeed pullup (Q2) to a known REN load. This requires the  
user to calibrate his hardware/software to known 1, 3, and 5 REN loads. This calibration determines the slope and  
offset of a straight line that correlates the REN load to the Q2 power dissipation. Once calibrated, future measure-  
ments utilize curve fitting to estimate the REN load.  
Figure 7 shows the relationship between Q2 power dissipation and an applied REN load for a typical Si321X hard-  
ware design. By calibrating the hardware and identifying two straight lines, REN can be measured with ~± 0.5 REN  
accuracy.  
Q2 Power  
Best Fit Line  
Measured  
# REN (applied)  
Figure 7. Typical Q2 Power vs. Applied REN Load  
Rev. 0.1  
7
AN273  
CONTACT INFORMATION  
Silicon Laboratories Inc.  
4635 Boston Lane  
Austin, TX 78735  
Tel: 1+(512) 416-8500  
Fax: 1+(512) 416-9669  
Toll Free: 1+(877) 444-3032  
Email: ProSLICinfo@silabs.com  
Internet: www.silabs.com  
The information in this document is believed to be accurate in all respects at the time of publication but is subject to change without notice.  
Silicon Laboratories assumes no responsibility for errors and omissions, and disclaims responsibility for any consequences resulting from  
the use of information included herein. Additionally, Silicon Laboratories assumes no responsibility for the functioning of undescribed features  
or parameters. Silicon Laboratories reserves the right to make changes without further notice. Silicon Laboratories makes no warranty, rep-  
resentation or guarantee regarding the suitability of its products for any particular purpose, nor does Silicon Laboratories assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation conse-  
quential or incidental damages. Silicon Laboratories products are not designed, intended, or authorized for use in applications intended to  
support or sustain life, or for any other application in which the failure of the Silicon Laboratories product could create a situation where per-  
sonal injury or death may occur. Should Buyer purchase or use Silicon Laboratories products for any such unintended or unauthorized ap-  
plication, Buyer shall indemnify and hold Silicon Laboratories harmless against all claims and damages.  
Silicon Laboratories, Silicon Labs, and ProSLIC are trademarks of Silicon Laboratories Inc.  
Other products or brandnames mentioned herein are trademarks or registered trademarks of their respective holders.  
8
Rev. 0.1  

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