Si3402B [SILICON]
ISOLATED EVALUATION BOARD FOR THE Si3402B;型号: | Si3402B |
厂家: | SILICON |
描述: | ISOLATED EVALUATION BOARD FOR THE Si3402B |
文件: | 总14页 (文件大小:431K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Si3402BISO-EVB
ISOLATED EVALUATION BOARD FOR THE Si3402B
1. Description
The Si3402B isolated evaluation board (Si3402BISO-EVB Rev 2) is a reference design for power supplies in
Power over Ethernet (PoE) Powered Device (PD) applications. The Si3402B is described more completely in the
data sheet and application notes. This document describes only the Si3402BISO-EVB evaluation board. An
evaluation board demonstrating the non-isolated application is described in the Si3402B-EVB User’s Guide.
2. Planning for Successful Designs
Silicon Labs strongly recommends the use of the schematic and layout databases provided with the evaluation
boards as the starting point for your design. Use of external components other than those described and
recommended in this document is generally discouraged. Refer to Table 2 on page 9 for more information on
critical component specifications. Careful attention to the recommended layout guidelines is required to enable
robust designs and full specification compliance. To help ensure design success, please submit your schematic
and layout databases to www.silabs.com/support for review and feedback.
3. Si3402B Board Interface
Ethernet data and power are applied to the board through the RJ-45 connector (J1). The board itself has no
Ethernet data transmission functionality, but, as a convenience, the Ethernet transformer secondary is brought out
to the test points. Power may be applied in the following ways:
Connecting a dc source to Pins 1, 2 and 3, 6 of the Ethernet cable (either polarity).
Connecting a dc source to Pins 4, 5 and 7, 8 of the Ethernet cable (either polarity).
Using an IEEE 802.3-2015-compliant, PoE-capable PSE, such as Trendnet TPE-1020WS.
The Si3402BISO-EVB board schematics and layout are shown in Figures 1 through 6.
The dc output is at connectors J11(+) and J12(–). Boards are generally shipped configured to produce +5 V output
voltage but can be configured for +3.3 V or other output voltages as shown in Table 2 on page 9. The
preconfigured Class 3 signature also can be modified according to Table 3 on page 10. The D8–D15 Schottky-type
diode bridge bypass is recommended only for higher power levels (Class 3 operation). For lower power levels,
such as Class 1 and Class 2, the diodes can be removed. When the Si3402B is used in external diode bridge
configuration, it requires at least one pair of the CTx and SPx pins to be connected to the PoE voltage input
terminals (to the input of the external bridge).
The feedback loop compensation has been optimized for 3.3, 5, 9, and 12 V output as well as with standard and
low ESR capacitors in the output filter section (Table 2 on page 9). The use of low ESR capacitors is recommended
for lower output ripple, improved load transient response and low temperature (below 0 °C) operation.
Rev. 1.2 4/16
Copyright © 2016 by Silicon Laboratories
Si3402BISO-EVB
Si3402BISO-EVB
1 5 n F
C 2 1
0
R 1 2
0 . 1 u F C 2 2
1 N 4 1 4 8 W
D F L T 3 0 A - 7
D 2
D 1
F B
s
n p l o s
2 0
1 9
1 8
1 7
1 6
1 5
5
2 4 . 3 k
R 4
4 8 . 7
R 3
V S S 2
S W
N C
R D E T
6
O
H S O
7
R C L
8
N C
n e V g
9
a s V s
S P 2
1 0
1 n F C 1 3
D 1 2
1 n F C 1 7
D 8
1 n F C 1 6
D 9
1 n F C 1 5
D 1 0
1 n F C 1 4
D 1 1
S S 2 1 5 0
S S 2 1 5 0
S S 2 1 5 0
S S 2 1 5 0
S S 2 1 5 0
1 n F C 1 2
D 1 3
D 1 4
S S 2 1 5 0
1 n F C 1 1
S S 2 1 5 0
1 n F C 1 0
D 1 5
S S 2 1 5 0
A _ 1 L E D
K _ 1 L E D
A _ 2 L E D
K _ 2 L E D
R 2 P W
R 3 P W
R 4 P W
R 5 P W
A 1
K 1
A 2
K 2
8
9
1 0
1 1
2
Rev. 1.2
Si3402BISO-EVB
Rev. 1.2
3
Si3402BISO-EVB
4
Rev. 1.2
Si3402BISO-EVB
Rev. 1.2
5
Si3402BISO-EVB
6
Rev. 1.2
Si3402BISO-EVB
Rev. 1.2
7
Si3402BISO-EVB
4. Bill of Materials
The following bill of materials is for a 5 V Class 3 design. For Class 1 and Class 2 designs, in addition to updating
the classification resistor (R3), the external diode bridge (D8–D15) can be removed to reduce BOM costs. Tables 2
and 3 list changes to the bill of materials for other output voltages and classification levels. Refer to “AN956: Using
the Si3402B PoE PD Controller in Isolated and Non-Isolated Designs” for more information.
Table 1. Si3402BISO-EVB Bill of Materials
Qty
3
Value
1 µF
Ref
C1, C3, C4
C2
Rating
Voltage
100 V
100 V
6.3 V
6.3 V
50 V
Tol
Type
X7R
PCB Footprint
C1210
Mfr Part Number
C1210X7R101-105K
EEUFC2A120
Mfr
±10%
±20%
±20%
±10%
±10%
±10%
±10%
Venkel
1
12 µF
1000 µF
100 µF
470 pF
3.3 nF
1 nF
Alum_Elec
Alum_Elec
X5R
C2.5X6.3MM-RAD
C3.5X8MM-RAD
C1210
Panasonic
Panasonic
Venkel
1
C5
ECA0JM102
1
C6
C1210X5R6R3-107K
C0805X7R500-471K
C0805X7R160-332K
C0603X7R101-102K
1
C7
X7R
C0805
Venkel
1
C9
16 V
X7R
C0805
Venkel
8
C10, C11, C12, C13,
C14, C15, C16, C17
100 V
X7R
C0603
Venkel
1
2
1
1
1
1
1
8
0.1 µF
1 nF
C18
C19, C20
C21
100 V
3000 V
16 V
±10%
±10%
±10%
±10%
X7R
X7R
C0805
C1808
C0805X7R101-104K
C1808X7R302-102K
C0805X7R160-153K
C0805X7R160-104K
1N4148W
Venkel
Venkel
15 nF
X7R
C0805
Venkel
0.1 µF
C22
16 V
X7R
C0805
Venkel
1N4148W
DFLT30A-7
PDS1040
SS2150
D1
2 A
4.65 A
10 A
2 A
100 V
30 V
Fast
SOD123
Diodes Inc
Diodes Inc.
Diodes Inc.
MCC
D2
Zener
Schottky
Single
POWERDI-123
POWERDI-5
DO-214AC
DFLT30A-7
D3
40 V
PDS1040-13
D8, D9, D10, D11,
150 V
SS2150-LTP
D12, D13, D14, D15
1
2
RJ-45
J1
Receptacle
Banana
RJ45-SI-52004
Banana-Jack
SI-52003-F
101
Bel
BND_POST
J11, J12
15 A
ABBATRON
HH SMITH
1
4
1
1
1
1
1
1
1
2
1
1
1
1
1
1
1 µH
330
L1
2.9 A
1500 mA
1/10 W
1/10 W
1/8 W
±20%
Shielded
SMT
IND-6.6X4.45MM
L0805
DO1608C-102ML_
BLM21PG331SN1
CR0805-10W-3300F
CR0805-10W-4992F
CRCW080548R7FKTA
CRCW080524K3FKEA
CR0805-10W-3652F
CR0805-10W-1212F
CR0603-16W-2051F
CR0805-10W-000
CR0805-10W-10R0F
CR0805-10W-4991F
FA2924-AL
Coilcraft
MuRata
Venkel
Venkel
Vishay
Vishay
Venkel
Venkel
Venkel
Venkel
Venkel
Venkel
Coilcraft
Silicon Labs
Vishay
TI
L2, L3, L4, L5
330
R1
R2
±1%
±1%
±1%
±1%
±1%
±1%
±1%
ThickFilm
ThickFilm
ThickFilm
ThickFilm
ThickFilm
ThickFilm
ThickFilm
ThickFilm
ThickFilm
ThickFilm
R0805
49.9 k
48.7
R0805
R3
R0805
24.3 k
36.5 k
12.1 k
2.05 k
0
R4
1/8 W
R0805
R5
1/10 W
1/10 W
1/16 W
2 A
R0805
R6
R0805
R7
R0603
R8, R12
R10
R11
T1
R0805
10
1/10 W
1/10 W
±1%
±1%
R0805
4.99 k
FA2924
Si3402B
VO618A-3X017T
TLV431
R0805
XFMR-FA2924
QFN20N5X5P0.8
SO4N10.16P2.54-AKEC
TLV431-DBZ
U1
100
PD
Si3402B
U2
VO618A-3X017T
U3
Shunt
Loop
TLV431BCDBZR
Not Installed Components
Black
7
TP1, TP2, TP3, TP4,
TP5, TP6, TP7
Testpoint
5001
Keystone
8
Rev. 1.2
Si3402BISO-EVB
Table 2. Component Selection for other Output Voltages and Filter Types
3.3 V Output
Transformer*
EP10 FA2671
EP13FA2924AL
Output Rectifier:
PDS1040
Reference
Any TLV431
Snubber: R10, C7
10 W, 470 pF
R5
R6
C6
C5
Panasonic
R7,
R8, R12
500 , 1.1
475
C9,C21
24.3 k
14.7 k
100 µF
X5R
1000 µF
ECA0JM102
k
,
10 nF, 33 nF,
Standard ESR Output
Filter
6.3
V
24.3 k
14.7 k
100 µF
X5R
560 µF
6.3 V
EEUFM0J561 324 , 2 k, 820 10 nF, 100 nF
Low ESR Output Filter
Output Rectifier
PDS1040
Snubber: R10, C7
Transformer*
EP10 FA2671
EP13FA2924CL
Reference
Any TLV431
5.0 V Output
10Ω, 470 pF
R5
R6
C6
C5
Panasonic
R7,
R8, R12
2.05
0 , 0
C9, C21
36.5 k
12.1 k
100 µF
X5R
1000 µF
ECA0JM102
k
,
3.3 nF, 15 nF
3.3 nF, 33 nF
Standard ESR Output
Filter
6.3
V
36.5 k
12.1 k
100 µF
X5R
560 µF
6.3 V
EEUFM0J561
2.05 k,
0 , 0
Low ESR Output Filter
9.0 V Output
Transformer*
EP10 FA2672
EP13FA2805CL
Output Rectifier
PDS5100
Snubber: R10, C7
:
Reference
Higher voltage e.g.,
TLV431ASNT1G
20 , 68 pF
R5
R6
C6
C5
Panasonic
R1,R7,
R8, R12
C9,C21
Standard ESR Output 66.5 k 22 µF X5R
Filter
470 µF
ECA1M471
1.3
0 , 0
k
3
k
,
10 nF, 15 nF
10 nF, 15 nF
10.5 k
16 V
16
330 µF
16
V
Low ESR Output Filter 66.5 k 22 µF X5R
10.5 k 16
EEUFM1C331
3 k,
V
V
0 , 0
12.0 V Output
Transformer* EP10 Output rectifier: PDS5100
Reference
FA2672
EP13FA2805CL
Higher Voltage e.g.,
TLV431ASNT1G
Snubber: R10, C7
20 , 68 pF
R5
R6
C6
C5
Panasonic
R1,R7,
R8, R12
C9,C21
Standard ESR Output 88.7 k 22 µF X5R
Filter 10.2 k 16 V
470 µF
ECA1M471
1.3
0 , 0
1.3
0 , 0
k
3
k
,
10 nF, 15 nF
10 nF, 15 nF
16
330 µF
16
V
Low ESR Output Filter 88.7 k 22 µF X5R
10.2 k 16
EEUFM1C331
k
3
k
,
V
V
*Note: Coilcraft part number. EP13 core is recommended for >10 W output power.
Rev. 1.2
9
Si3402BISO-EVB
Table 3. Component Selection for Different Classification Levels
Class
R3 (1%)
Open
140
0
1
2
3
75
45.3
10
Rev. 1.2
Si3402BISO-EVB
APPENDIX—Si3402BISO DESIGN AND LAYOUT
CHECKLIST
Introduction
Although all four EVB designs are preconfigured as Class 3 PDs with 5 V outputs, the schematics and layouts can
easily be adapted to meet a wide variety of common output voltages and power levels.
The complete EVB design databases for the standard 5 V/Class 3 configuration are included in the EVB kit and
can also be requested through Silicon Labs customer support at www.silabs.com/PoE under the “Documentation”
link. Silicon Labs strongly recommends using these EVB schematics and layout files as a starting point to ensure
robust performance and to help avoid common mistakes in the schematic capture and PCB layout processes.
Following are recommended design checklists that can assist in trouble-free development of robust PD designs:
Refer also to the Si3402B data sheet and AN956 when using the checklists below.
1. Design Planning Checklist:
a. Silicon Labs strongly recommends using the EVB schematics and layout files as a starting point as you
begin integrating the Si3402B into your system design process.
b. Determine your load’s power requirements (i.e., V
and I
consumed by the PD, including the
OUT
OUT
typical expected transient surge conditions). In general, to achieve the highest overall efficiency
performance of the Si3402, choose the highest voltage used in your PD and then post regulate to the
lower supply rails, if necessary.
c. If your PD design consumes >7 W, make sure you bypass the Si3402’s on-chip diode bridges with
external Schottky diode bridges or discrete Schottky diodes. Bypassing the Si3402’s on-chip diode
bridges with external bridges or discrete diodes is required to help spread the heat generated in designs
dissipating >7 W.
d. Based on your required PD power level, select the appropriate class resistor value by referring to Table 3
of AN956. This sets the Rclass resistor (R3 in Figure 1 on page 2).
e. The feedback loop stability has been checked over the entire load range for the specific component
choices in Table 1. Low ESR filter capacitors will give better load transient response and lower output
ripple so they are generally preferred. For the standard ESR capacitor, the ESR increase at very low
temperatures may cause a loop stability issue. A typical evaluation board has been shown to exhibit
instability under very heavy loads at –20 °C. Due to self-heating, this condition is not a great concern.
However, using a low ESR filter capacitor solves this problem (but requires some recompensation of the
feedback loop). Silicon Laboratories recommends against component substitution in the filtering and
feedback path as this may result in unstable operation. Also, use care in situations that have additional
capacitive loading as this will also affect loop stability.
2. General Design Checklist Items:
a. ESD caps (C10–C17 in Figure 1) are strongly recommended for designs where system-level ESD
(IEC6100-4-2) must provide >15 kV tolerance.
b. If your design uses an AUX supply, make sure to include a 3 surge limiting resistor in series with the
AUX supply for hot insertion. Refer to AN956 when AUX supply is 48 V.
c. Silicon Labs strongly recommends the inclusion of a minimum load (250 mW) to avoid switcher pulsing
when no load is present, and to avoid false disconnection when less than 10 mA is drawn from the PSE.
If your load is not at least 250 mW, add a resistor load to dissipate at least 250 mW.
d. If using PLOSS function, make sure it’s properly terminated for connection in your PD subsystem. If
PLOSS is not needed, leave this pin floating.
Rev. 1.2
11
Si3402BISO-EVB
3. Layout Guidelines:
a. Make sure the VNEG pin of the Si3402B is connected to the backside of the QFN package with an
adequate thermal plane, as noted in the data sheet and AN956.
b. Keep the trace length from connecting to SWO and retuning to Vss1 and Vss2 as short as possible.
Make all of the power (high current) traces as short, direct, and thick as possible. It is a good practice on
a standard PCB board to make the traces an absolute minimum of 15 mils (0.381 mm) per Ampere.
c. Usually one standard via handles 200 mA of current. If the trace will need to conduct a significant
amount of current from one plane to the other use multiple vias.
d. Keep the circular area of the loop from the Switcher FET output to the inductor or transformer and
returning from the input filter capacitors (C1–C4) to Vss2 as small a diameter as possible. Also, minimize
the circular area of the loop from the output of the inductor or transformer to the Schottky diode and
returning through the fist stage output filter capacitor back to the inductor or transformer as small as
possible. If possible, keep the direction of current flow in these two loops the same.
e. Connect the sense points to the output terminals directly to avoid load regulation issues related to IR
drops in the PCB traces. The sense points are the output side of R5 and Pin 3 of TLV431.
f. Keep the feedback and loop stability components as far from the transformer/inductor and noisy power
traces as possible.
g. If the outputs have a ground plane or positive output plane, do not connect the high current carrying
components and the filter capacitors through the plane. Connect them together and then connect to the
plane at a single point.
h. As a convenience in layout, please note that the IC is symmetrical with respect to CT1, CT2, SP1 and
SP2. These leads can be interchanged. At least one pair of CT1/CT2 or SP1/SP2 should be connected.
To help ensure first pass success, please submit your schematics and layout files to www.silabs.com/support for
review. Other technical questions may be submitted as well.
12
Rev. 1.2
Si3402BISO-EVB
DOCUMENT CHANGE LIST
Revision 1.1 to Revision 1.2
Initial release of Si3402BISO-EVB User’s Guide,
modified from Si3402-ISO-EVB User’s Guide
Revision 1.1.
Rev. 1.2
13
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