SM4037NHKC-TRG [SINOPWER]
N-Channel Enhancement Mode MOSFET;
| 型号： | SM4037NHKC-TRG |
| 厂家： | 
Sinopower Semiconductor Inc |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总11页 (文件大小：584K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM4037NHK
N-Channel Enhancement Mode MOSFET
Features
Pin Description
•
40V/14A
D
D
D
D
RDS(ON)=4.9mΩ(max.)@VGS=10V
RDS(ON)=7mΩ(max.)@VGS=4.5V
100% UIS + Rg Tested
S
S
S
G
•
•
•
Reliable and Rugged
SOP-8
Lead Free and Green Devices Available
(RoHS Compliant)
(5,6,7,8)
DD D D
Applications
(4)
G
•
•
•
SMPS Synchronous Rectification.
Load Switch.
DC-DC Conversion.
S S S
(1,2,3)
N-Channel MOSFET
Ordering and Marking Information
SM4037NH
Package Code
K : SOP-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
Assembly Material
Handling Code
TR : Tape & Reel
Assembly Material
Temperature Range
Package Code
G : Halogen and Lead Free Device
4037NH
XXXXX
SM4037NH K :
XXXXX - Lot Code
●
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are
fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL
classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl
does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest
version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - May, 2018
1
www.sinopowersemi.com
SM4037NHK
(TA=25°C Unless Otherwise Noted)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
TJ
Drain-Source Voltage
40
V
Gate-Source Voltage
±20
Maximum Junction Temperature
Storage Temperature Range
150
°C
°C
A
TSTG
IS
-55 to 150
Diode Continuous Forward Current
Continuous Drain Current
Pulse Drain Current
TA=25°C
TA=25°C
TA=70°C
TA=25°C
TA=25°C
TA=70°C
t ≤ 10s
1
14
11
55
1.6
1
ID
A
A
a
IDM
PD
Maximum Power Dissipation
W
36
78
30
45
b
RqJA
Thermal Resistance-Junction to Ambient
°C/W
Steady State
L=0.1mH
L=0.1mH
c
IAS
Avalanche Current, Single pulse
Avalanche Energy, Single pulse
A
c
EAS
mJ
Note a Pulse width is limited by max. junction temperature.
：
：
：
Note b Surface mounted on 1in2 pad area, steady state t = 999s.
Note c UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - May, 2018
www.sinopowersemi.com
2
SM4037NHK
(TA = 25°C unless otherwise noted)
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
V =0V, I =250 A
40
-
-
1
V
m
GS
DS
VDS=32V, VGS=0V
TJ=85°C
V =V , I =250 A
-
-
IDSS Zero Gate Voltage Drain Current
A
m
-
-
30
2.5
±100
4.9
-
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
1.3
1.7
-
V
m
DS
GS DS
VGS=±20V, VDS=0V
VGS=10V, IDS=14A
-
-
-
-
-
nA
4.1
6.4
5.4
21
d
RDS(ON) Drain-Source On-state Resistance
TJ=125°C
m
W
VGS=4.5V, IDS=12A
VDS=5V, IDS=8A
7
Gfs
Forward Transconductance
-
S
Diode Characteristics
d
VSD
trr
Diode Forward Voltage
ISD=20A, VGS=0V
-
-
-
-
-
0.8
26
1.1
V
ns
nC
W
Reverse Recovery Time
Charge Time
-
-
-
-
ta
15
I =14A, dl /dt=100A/ s
m
DS
SD
tb
Discharge Time
11
Qrr
Reverse Recovery Charge
18.5
Dynamic Characteristics e
RG
Ciss
Coss
Crss
td(ON)
tr
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
-
-
-
-
-
-
-
-
1
2
Input Capacitance
1575 2048
VGS=0V,
VDS=20V,
Frequency=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
382
47
-
pF
-
14.4
9.3
26
17
62
45
V =20V, R =20 ,
W
DD
L
IDS=1A, VGEN=10V,
R =6
ns
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics e
34
W
G
24.7
VDS=20V, VGS=10V,
IDS=14A
Qg
Total Gate Charge
-
26.2
36.7
Qg
Qgth
Qgs
Qgd
Total Gate Charge
-
-
-
-
12.4
2.8
4.5
3.6
-
-
-
-
nC
Threshold Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS=20V, VGS=4.5V,
IDS=14A
Note d Pulse test ; pulse width≤300 s, duty cycle≤2%.
：
m
Note e Guaranteed by design, not subject to production testing.
：
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - May, 2018
www.sinopowersemi.com
3
SM4037NHK
Typical Operating Characteristics
Power Dissipation
Drain Current
16
14
12
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
6
4
2
0.2
TA=25oC
0.0
TA=25oC,VG=10V
20 40 60 80 100 120 140 160
0
0
0
20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
2
1
Duty = 0.5
0.2
0.1
0.05
0.1
0.01
1E-3
0.02
0.01
Single Pulse
Mounted on 1in2 pad
RqJA :78oC/W
1E-4 1E-3 0.01 0.1
1
10 100 1000
VDS - Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - May, 2018
www.sinopowersemi.com
4
SM4037NHK
Typical Operating Characteristics(Cont.)
Output Characteristics
Drain-Source On Resistance
54
8
7
6
5
4
3
2
VGS=3.5,4,5,6,7,8,9,10V
45
36
3V
VGS=4.5V
VGS=10V
27
18
9
2.5V
2.0
0
0.0
0.5
1.0
1.5
2.5
3.0
0
10
20
30
40
50
VDS - Drain - Source Voltage (V)
ID - Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
18
15
12
9
IDS=14A
IDS =250mA
6
3
0
-50 -25
0
25 50 75 100 125 150
2
3
4
5
6
7
8
9
10
VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (°C)
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - May, 2018
www.sinopowersemi.com
5
SM4037NHK
Typical Operating Characteristics(Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
60
10
2.0
V
GS = 10V
IDS = 14A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
T=150oC
j
T=25oC
j
1
RON@T =25oC: 4.1mW
j
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-50 -25
0
25 50 75 100 125 150
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
2000
1800
1600
1400
1200
1000
800
10
Frequency=1MHz
Ciss
VDS= 20V
IDS= 14A
9
8
7
6
5
4
3
2
1
0
600
Coss
Crss
400
200
0
0
5
10 15 20 25 30 35 40
0
3
6
9
12 15 18 21 24 27
VDS - Drain-Source Voltage (V)
QG - Gate Charge (nC)
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - May, 2018
www.sinopowersemi.com
6
SM4037NHK
Typical Operating Characteristics(Cont.)
Transfer Characteristics
60
50
40
30
T=25oC
j
20
T=125oC
j
10
0
0
1
2
3
4
5
VGS - Gate-Source Voltage (V)
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - May, 2018
www.sinopowersemi.com
7
SM4037NHK
Avalanche Test Circuit and Waveforms
V
DS
V
DSX(SUS)
L
tp
V
DS
DUT
I
AS
RG
V
DD
V
DD
E
AS
I
L
tp
0.01
W
tAV
Switching Time Test Circuit and Waveforms
V
DS
RD
V
DS
90%
DUT
V
GS
RG
V
DD
10%
V
GS
tp
t
d(on)
tr
t
d(off)
tf
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - May, 2018
www.sinopowersemi.com
8
SM4037NHK
Disclaimer
Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to
development high quality and better performance products to satisfy all customers’ needs.
However, a product may fail to meet customer’s expectation or malfunction for various
situations.
All information which is shown in the datasheet is based on Sinopower’s research and
development result, therefore, Sinopower shall reserve the right to adjust the content and
monitor the production.
In order to unify the quality and performance, Sinopower has been following JEDEC while
defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each
product, different processes may cause slightly different results.
The technical information specified herein is intended only to show the typical functions of
and examples of application circuits for the products. Sinopower does not grant customers
explicitly or implicitly, any license to use or exercise intellectual property or other rights held
by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any
dispute arising from the use of such technical information.
The products are not designed or manufactured to be used with any equipment,
device or system which requires an extremely high level of reliability, such as the failure or
malfunction of which any may result in a direct threat to human life or a risk of human
injury. Sinopower shall bear no responsibility in any way for use of any of the
products for the above special purposes. If a product is intended to use for any such special
purpose, such as vehicle, military, or medical controller relevant applications, please contact
Sinopower sales representative before purchasing.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - May, 2018
www.sinopowersemi.com
9
SM4037NHK
Classification Profile
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - May, 2018
www.sinopowersemi.com
10
SM4037NHK
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
150 C
Preheat & Soak
100 C
°
°
Temperature min (T
)
smin
150 C
200 C
°
°
Temperature max (T
)
smax
60-120 seconds
60-120 seconds
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
(Tsmax to TP)
3 C/second max.
°
3 C/second max.
°
Liquidous temperature (TL)
Time at liquidous (tL)
183 C
60-150 seconds
217 C
60-150 seconds
°
°
Peak package body Temperature (Tp)*
See Classification Temp in table 1
See Classification Temp in table 2
Time (t )** within 5 C of the specified
°
P
20** seconds
30** seconds
classification temperature (T )
c
Average ramp-down rate (Tp to T
)
6 C/second max.
°
6 C/second max.
°
smax
Time 25 C to peak temperature
6 minutes max.
8 minutes max.
°
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Package
Thickness
Volume mm3
<350
Volume mm3
≥350
<2.5 mm
235 C
220 C
°
°
2.5 mm
≥
220 C
220 C
°
°
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
Volume mm3
<350
Volume mm3
350-2000
Volume mm3
>2000
260 C
<1.6 mm
260 C
260 C
°
°
°
1.6 mm – 2.5 mm
260 C
250 C
245 C
°
°
°
2.5 mm
250 C
245 C
245 C
°
≥
°
°
Reliability Test Program
Test item
Method
Description
SOLDERABILITY
HTRB
HTGB
PCT
TCT
JESD-22, B102
JESD-22, A108
JESD-22, A108
JESD-22, A102
JESD-22, A104
5 Sec, 245°C
1000 Hrs, 80% of VDS max @ Tjmax
1000 Hrs, 100% of VGS max @ Tjmax
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
Customer Service
Sinopower Semiconductor, Inc.
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5635080
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - May, 2018
www.sinopowersemi.com
11
相关型号：
SM404
RESISTOR, METAL GLAZE/THICK FILM, 3; 5W, 0.5 - 20%, 25; 50; 100ppm, 3000ohm - 5000000000ohm, THROUGH HOLE MOUNT, RADIAL LEADED, ROHS COMPLIANT
OHMITE
SM404038205ME
Fixed Resistor, Metal Glaze/thick Film, 3W, 82000000ohm, 10000V, 15% +/-Tol, 50ppm/Cel,
OHMITE
©2020 ICPDF网 联系我们和版权申明