SM4037NHKPC-TRG [SINOPWER]
N-Channel Enhancement Mode MOSFET;
| 型号： | SM4037NHKPC-TRG |
| 厂家： | 
Sinopower Semiconductor Inc |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总11页 (文件大小：274K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM4037NHKP
®
N-Channel Enhancement Mode MOSFET
Features
Pin Description
•
40V/80A,
D
D
D
D
RDS(ON)= 3.7mΩ (Max.) @ VGS=10V
RDS(ON)= 5.5mΩ (Max.) @ VGS=4.5V
•
•
•
•
•
100% UIS + Rg Tested
G
Pin 1
S
S
S
Reliable and Rugged
DFN5x6A-8_EP
Lower Qg and Qgd for high-speed switching
Lower RDS(ON) to Minimize Conduction Losses
(5,6,7,8)
DD DD
Lead Free and GreenDevices Available
(RoHSCompliant)
•
Moisture Sensitivity Level MSL1
(per JEDEC J-STD-020D)
(4)
G
Applications
•
Power Management in Desktop Computer or
DC/DC Converters.
S S S
( 1, 2, 3 )
N-ChannelMOSFET
Ordering and Marking Information
Package Code
KP : DFN5x6A-8 _EP
SM4037NH
Operating Junction Temperature Range
Assembly Material
Handling Code
C : -55 to 175 oC
Handling Code
Temperature Range
TR : Tape & Reel
Assembly Material
Package Code
G : Halogen and Lead Free Device
4037NH
XXXXX
SM4037NH KP :
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
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Copyright Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2018
SM4037NHKP
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
TJ
Drain-Source Voltage
Gate-Source Voltage
40
±20
175
-55 to 175
28
V
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Pulsed Drain Current
°C
TSTG
IS
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Steady State
TA=25°C
TA=70°C
TA=25°C
TA=25°C
TA=70°C
t ≤ 10s
IDM
320
80 a
65
A
a
ID
Continuous Drain Current
62.5
31.3
2.4
PD
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Continuous Drain Current
W
°C/W
A
RθJC
17.5
14.7
70
c
ID
b
IDM
Pulsed Drain Current
A
2.3
c
PD
Maximum Power Dissipation
W
1.3
24
c
Thermal Resistance-Junction to Ambient
°C/W
RθJA
Steady State
L=0.1mH
L=0.1mH
66
d
IAS
Avalanche Current, Single pulse
Avalanche Energy, Single pulse
32
A
d
EAS
51
mJ
Note a：Max. continue current is limited by bonding wire.
Note b：Pulse width is limited by max. junction temperature.
Note c：Surface mounted on 1in2 pad area, steady state t = 999s.
Note d：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
2
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Copyright Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2018
SM4037NHKP
®
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
40
-
-
1
V
VGS=0V, IDS=250µA
VDS=32V, VGS=0V
-
-
IDSS Zero Gate Voltage Drain Current
µA
TJ=85°C
-
-
30
2.5
±100
3.7
-
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
1.3
1.7
-
V
VDS=VGS, IDS=250µA
VGS=±20V, VDS=0V
VGS=10V, IDS=20A
-
-
-
-
-
nA
3.1
4.9
4.2
40
e
RDS(ON) Drain-Source On-state Resistance
TJ=125°C
mΩ
S
VGS=4.5V, IDS=15A
VDS=5V, IDS=20A
5.5
-
Gfs
Forward Transconductance
Diode Characteristics
e
VSD
trr
Diode Forward Voltage
ISD=20A, VGS=0V
-
-
-
-
-
0.81
27.3
16.2
11
1.1
V
Reverse Recovery Time
Charge Time
-
-
-
-
ta
ns
nC
ISD=20A, dlSD/dt=100A/µs
tb
Discharge Time
Qrr
Reverse Recovery Charge
17
Dynamic Characteristics f
RG
Ciss
Coss
Crss
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
-
-
-
-
-
-
-
-
1
2
Ω
Input Capacitance
1620 2106
VGS=0V,
VDS=20V,
Frequency=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
390
55
-
-
-
-
-
-
pF
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics f
14
VDD=20V, RL=20Ω,
IDS=1A, VGEN=10V,
RG=6Ω
7.8
34
ns
26
VDS=20V, VGS=10V,
IDS=20A
Qg
Total Gate Charge
-
25
32.5
Qg
Qgth
Qgs
Qgd
Total Gate Charge
-
-
-
-
12
2.7
5
-
-
-
-
nC
Threshold Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS=20V, VGS=4.5V,
IDS=20A
3
Note e：Pulse test ; pulse width≤300µs, duty cycle≤2%.
Note f： Guaranteed by design, not subject to production testing.
3
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Copyright Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2018
SM4037NHKP
®
Typical Operating Characteristics
Power Dissipation
Drain Current
70
90
75
60
45
30
15
0
60
50
40
30
20
10
TC=25oC
0
TC=25oC,VG=10V
0
20 40 60 80 100 120 140 160 180
0
20 40 60 80 100 120 140 160 180
Tj - Junction Temperature (°C)
Tj - Junction Temperature
Thermal Transient Impedance
Safe Operation Area
3
300
100
Duty = 0.5
1
0.2
0.1
100µs
300µs
0.05
0.1
10
1
0.02
0.01
1ms
0.01
1E-3
Single Pulse
10ms
DC
TC=25oC
R
θJC :2.4oC/W
0.01 0.1
0.1
0.01
0.1
1
10
100 300
1E-6
1E-5
1E-4
1E-3
Square Wave PulseDuration (sec)
VDS - Drain - Source Voltage (V)
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Copyright Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2018
SM4037NHKP
®
Typical Operating Characteristics (Cont.)
Thermal Transient Impedance
Safe Operation Area
2
1
200
100
Duty = 0.5
0.2
0.1
10
1
300µs
0.05
1ms
0.1
0.01
1E-3
0.02
0.01
10ms
0.1
100ms
1s
Single Pulse
0.01
10s
Mounted on 1in2 pad
TA=25OC
R
θJA :66oC/W
DC
1E-3
0.01
0.1
1
10
100 300
1E-4 1E-3 0.01 0.1
1
10 100 1000
Square Wave PulseDuration (sec)
VDS - Drain - Source Voltage (V)
Output Characteristics
Drain-Source On Resistance
7
6
5
4
3
2
1
160
140
120
100
80
VGS=4,4.5,5,6,7,8,9,10V
3.5V
VGS=4.5V
VGS=10V
60
3V
40
20
2.5V
0
0.0
0
30
60
90
120
150
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain - Source Voltage (V)
ID -Drain Current (A)
5
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Copyright Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2018
SM4037NHKP
®
Typical Operating Characteristics (Cont.)
Gate-Source On Resistance
Gate Threshold Voltage
14
12
10
8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
IDS=20A
IDS =250µA
6
4
2
0
2
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75 100 125 150 175
VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (°C)
Source-Drain Diode Forward
Drain-Source On Resistance
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
VGS = 10V
IDS = 20A
Tj=150oC
Tj=25oC
RON@Tj=25oC: 3.1mΩ
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-50 -25
0
25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
6
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Copyright Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2018
SM4037NHKP
®
Typical Operating Characteristics (Cont.)
Capacitance
Gate Charge
10
9
8
7
6
5
4
3
2
1
0
2000
1800
1600
1400
1200
1000
800
Frequency=1MHz
Ciss
VDS= 20V
IDS= 20A
600
Coss
400
Crss
5
200
0
0
5
10
15
20
25
0
10 15 20 25 30 35 40
VDS -Drain-Source Voltage (V)
QG -Gate Charge (nC)
Transfer Characteristics
120
100
80
60
40
20
0
Tj=25oC
Tj=125oC
0
1
2
3
4
5
6
VGS - Gate-Source Voltage (V)
7
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Copyright Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2018
SM4037NHKP
®
Avalanche Test Circuit and Waveforms
VDS
L
VDSX(SUS)
tp
DUT
VDS
IAS
RG
VDD
VDD
IL
tp
EAS
0.01Ω
tAV
Switching Time Test Circuit and Waveforms
VDS
RD
VDS
90%
DUT
VGS
RG
VDD
10%
VGS
tp
td(on) tr
td(off) tf
8
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Copyright Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2018
SM4037NHKP
®
Disclaimer
Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making
great efforts to development high quality and better performance products to
satisfy all customers’ needs. However, a product may fail to meet customer’s
expectation or malfunction for various situations.
All information which is shown in the datasheet is based on Sinopower’s
research and development result, therefore, Sinopower shall reserve the right
to adjust the content and monitor the production.
In order to unify the quality and performance, Sinopower has been following
JEDEC while defines assembly rule. Notwithstanding all the suppliers
basically follow the rule for each product, different processes may cause
slightly different results.
The technical information specified herein is intended only to show the typical
functions of and examples of application circuits for the products. Sinopower
does not grant customers explicitly or implicitly, any license to use or exercise
intellectual property or other rights held by Sinopower and other parties.
Sinopower shall bear no responsible whatsoever for any dispute arising from
the use of such technical information.
The products are not designed or manufactured to be used with any
equipment, device or system which requires an extremely high level of
reliability, such as the failure or malfunction of which any may result in a direct
threat to human life or a risk of human injury. Sinopower shall bear no
responsibility in any way for use of any of the products for the above special
purposes. If a product is intended to use for any such special purpose, such
as vehicle, military, or medical controller relevant applications, please contact
Sinopower sales representative before purchasing.
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Copyright Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2018
SM4037NHKP
®
Classification Profile
10
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Copyright Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2018
SM4037NHKP
®
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
150 C
100 C
°
°
Temperature min (Tsmin
)
Temperature max (Tsmax
Time (Tsmin to Tsmax) (ts)
150 C
200 C
°
°
)
60-120 seconds
60-120 seconds
Average ramp-up rate
(Tsmax to TP)
3 C/second max.
°
3 C/second max.
°
Liquidous temperature (TL)
Time at liquidous (tL)
183 C
60-150 seconds
217 C
60-150 seconds
°
°
Peak package body Temperature
(Tp)*
See Classification Temp in table 1
See Classification Temp in table 2
30** seconds
Time (t )** within 5 C of the specified
°
P
20** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax
)
6 C/second max.
°
6 C/second max.
°
6 minutes max.
8 minutes max.
Time 25 C to peak temperature
°
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Volume mm3
Package
Volume mm3
Thickness
<350
≥350
<2.5 mm
235 °C
220 °C
220 °C
220 °C
≥2.5 mm
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm3
Volume mm3
350-2000
260 °C
Volume mm3
<350
>2000
260 °C
245 °C
245 °C
260 °C
1.6 mm – 2.5 mm
≥2.5 mm
260 °C
250 °C
250 °C
245 °C
Reliability Test Program
Test item
Method
JESD-22, B102
JESD-22, A108
Description
SOLDERABILITY
HTRB
5 Sec, 245°C
1000 Hrs, 80% of VDS max @ Tjmax
1000 Hrs, 100% of VGS max @ Tjmax
HTGB
JESD-22, A108
JESD-22, A102
JESD-22, A104
PCT
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
TCT
Customer Service
Sinopower Semiconductor, Inc.
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5635080
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Copyright Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2018
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