SM6127NSUC [SINOPWER]
N-Channel Enhancement Mode MOSFET;
| 型号： | SM6127NSUC |
| 厂家： | 
Sinopower Semiconductor Inc |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总10页 (文件大小：152K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM6127NSUC
®
N-Channel Enhancement Mode MOSFET
Features
Pin Description
·
60V/80Aa,
RDS(ON)= 6.6mW (max.) @ VGS=10V
RDS(ON)= 8.0mW (max.) @ VGS=4.5V
S
D
G
·
·
Reliable and Rugged
Lead Free and GreenDevices Available
(RoHSCompliant)
Top View of TO-251S
D
·
100% UIS + Rg Tested
Applications
G
·
·
·
·
Secondary Side Synchronous Rectification
DC-DC Converter
S
Motor Control
N-ChannelMOSFET
Load Switching
Ordering and Marking Information
SM6127NS
Package Code
UC : TO-251S
Assembly Material
Handling Code
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TU : Tube
Assembly Material
Temperature Range
Package Code
G : Halogen and Lead Free Device
SM6127NS UC :
SM6127NS
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
1
www.sinopowersemi.com
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - July, 2015
SM6127NSUC
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
TJ
Drain-Source Voltage
Gate-Source Voltage
60
±20
150
-55 to 150
40
V
Maximum Junction Temperature
Storage Temperature Range
°C
TSTG
IS
Diode Continuous Forward Current
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=25°C
TC=100°C
A
80 a
ID
Continuous Drain Current
Pulsed Drain Current
61
A
b
IDM
300
125
50
PD
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Continuous Drain Current
W
°C/W
A
1
RqJC
ID
TA=25°C
TA=70°C
TA=25°C
TA=70°C
14
11
2.5
PD
Maximum Power Dissipation
W
1.6
c
Thermal Resistance-Junction to Ambient
Avalanche Current, Single pulse
Avalanche Energy, Single pulse
50
°C/W
A
RqJA
d
IAS
L=0.5mH
L=0.5mH
30
d
EAS
225
mJ
Note a：Current limited by bond wire.
Note b：Pulse width limited by max. junction temperature.
Note c：Surface Mounted on 1in2 pad area.
Note d：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC)
2
www.sinopowersemi.com
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - July, 2015
SM6127NSUC
®
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
60
-
-
-
-
1
V
VGS=0V, IDS=250mA
VDS=48V, VGS=0V
IDSS Zero Gate Voltage Drain Current
mA
TJ=85°C
-
-
30
3
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
1
-
2
V
VDS=VGS, IDS=250mA
VGS=±20V, VDS=0V
VGS=10V, IDS=40A
VGS=4.5V, IDS=30A
-
±100
6.6
8.0
nA
-
5.5
6.1
mW
mW
e
RDS(ON) Drain-Source On-state Resistance
-
Diode Characteristics
e
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=20A, VGS=0V
-
-
-
0.8
33
1.3
V
-
-
ns
nC
ISD=30A, dlSD/dt=100A/ms
Qrr
41
Dynamic Characteristics f
RG
Ciss
Coss
Crss
Gate Resistance
VGS=0V,VDS=0V,f=1MHz
-
-
-
-
-
-
-
-
1.0
-
W
Input Capacitance
4350 6100
VGS=0V,
VDS=30V,
Frequency=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
425
215
25
-
-
pF
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics f
45
22
162
69
VDD=30V, RL=30W,
IDS=1A, VGEN=10V,
RG=6W
12
ns
90
38
VDS=30V, VGS=4.5V,
IDS=30A
Qg
Total Gate Charge
-
39
-
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
83
17
15
117
nC
VDS=30V, VGS=10V,
IDS=30A
-
-
-
-
Note e：Pulse test ; pulse width£300ms, duty cycle£2%.
Note f：Guaranteed by design, not subject to production testing.
3
www.sinopowersemi.com
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - July, 2015
SM6127NSUC
®
Typical Operating Characteristics
Power Dissipation
Drain Current
100
150
125
100
75
80
60
40
20
0
50
25
TC=25oC
TC=25oC,VG=10V
0
0
20 40 60 80 100 120 140 160
Tj - Junction Temperature
0
20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
800
100
3
1
Duty = 0.5
0.2
0.1
100ms
0.1
0.01
1E-3
1E-4
0.05
1ms
0.02
0.01
10
1
10ms
DC
Single Pulse
R
qJC :1oC/W
TC=25oC
0.1
0.01
0.1
1
10
100 300
1E-6
1E-5
1E-4
1E-3
0.01 0.1
VDS - Drain - Source Voltage (V)
Square Wave PulseDuration (sec)
4
www.sinopowersemi.com
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - July, 2015
SM6127NSUC
®
Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
9
8
7
6
5
4
3
160
140
120
100
80
VGS=4,5,6,7,8,9,10V
3.5V
VGS=4.5V
VGS=10V
60
3V
40
20
2.5V
0
0
30
60
90
120
150
0
1
2
3
4
5
VDS - Drain - Source Voltage (V)
ID -Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
24
20
16
12
8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
IDS =250mA
IDS=40A
4
0
-50 -25
0
25 50 75 100 125 150
2
3
4
5
6
7
8
9
10
VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (°C)
5
www.sinopowersemi.com
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - July, 2015
SM6127NSUC
®
Typical Operating Characteristics (Cont.)
Source-Drain Diode Forward
Drain-Source On Resistance
2.5
2.0
1.5
1.0
0.5
0.0
VGS = 10V
IDS = 40A
100
10
1
Tj=150oC
Tj=25oC
RON@Tj=25oC: 5.5mW
0.1
0.0
-50 -25
0
25 50 75 100 125 150
0.3
0.6
0.9
1.2
1.5
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
7000
6000
5000
4000
3000
2000
1000
0
10
9
8
7
6
5
4
3
2
1
0
Frequency=1MHz
VDS=30V
IDS=30A
Ciss
Coss
Crss
0
8
16
24
32
40
0
15
30
45
60
75
90
VDS -Drain-Source Voltage (V)
QG -Gate Charge (nC)
6
www.sinopowersemi.com
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - July, 2015
SM6127NSUC
®
Avalanche Test Circuit and Waveforms
VDS
L
VDSX(SUS)
tp
DUT
VDS
IAS
RG
VDD
VDD
IL
tp
EAS
0.01W
tAV
Switching Time Test Circuit and Waveforms
VDS
RD
VDS
90%
DUT
VGS
RG
VDD
10%
VGS
tp
td(on) tr
td(off) tf
7
www.sinopowersemi.com
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - July, 2015
SM6127NSUC
®
Classification Profile
8
www.sinopowersemi.com
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - July, 2015
SM6127NSUC
®
Disclaimer
Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making
great efforts to development high quality and better performance products to
satisfy all customers’ needs. However, a product may fail to meet customer’s
expectation or malfunction for various situations.
All information which is shown in the datasheet is based on Sinopower’s
research and development result, therefore, Sinopower shall reserve the right
to adjust the content and monitor the production.
In order to unify the quality and performance, Sinopower has been following
JEDEC while defines assembly rule. Notwithstanding all the suppliers
basically follow the rule for each product, different processes may cause
slightly different results.
The technical information specified herein is intended only to show the typical
functions of and examples of application circuits for the products. Sinopower
does not grant customers explicitly or implicitly, any license to use or exercise
intellectual property or other rights held by Sinopower and other parties.
Sinopower shall bear no responsible whatsoever for any dispute arising from
the use of such technical information.
The products are not designed or manufactured to be used with any
equipment, device or system which requires an extremely high level of
reliability, such as the failure or malfunction of which any may result in a direct
threat to human life or a risk of human injury. Sinopower shall bear no
responsibility in any way for use of any of the products for the above special
purposes. If a product is intended to use for any such special purpose, such
as vehicle, military, or medical controller relevant applications, please contact
Sinopower sales representative before purchasing.
9
www.sinopowersemi.com
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - July, 2015
SM6127NSUC
®
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
150 C
Preheat & Soak
100 C
°
°
Temperature min (Tsmin
)
Temperature max (Tsmax
Time (Tsmin to Tsmax) (ts)
150 C
200 C
°
°
)
60-120 seconds
60-120 seconds
Average ramp-up rate
(Tsmax to TP)
3 C/second max.
°
3 C/second max.
°
Liquidous temperature (TL)
Time at liquidous (tL)
183 C
60-150 seconds
217 C
60-150 seconds
°
°
Peak package body Temperature
(Tp)*
See Classification Temp in table 1
See Classification Temp in table 2
30** seconds
Time (t )** within 5 C of the specified
°
P
20** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax
)
6 C/second max.
°
6 C/second max.
°
6 minutes max.
8 minutes max.
Time 25 C to peak temperature
°
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Volume mm3
350
Package
Volume mm3
<350
Thickness
<2.5 mm
235 °C
220 °C
220 °C
220 °C
³ 2.5 mm
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Volume mm3
Volume mm3
Volume mm3
Thickness
<1.6 mm
1.6 mm – 2.5 mm
³ 2.5 mm
<350
350-2000
260 °C
>2000
260 °C
245 °C
245 °C
260 °C
260 °C
250 °C
250 °C
245 °C
Reliability Test Program
Test item
Method
JESD-22, B102
JESD-22, A108
Description
SOLDERABILITY
HTRB
5 Sec, 245°C
1000 Hrs, 80% of VDS max @ Tjmax
1000 Hrs, 100% of VGS max @ Tjmax
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
HTGB
PCT
TCT
JESD-22, A108
JESD-22, A102
JESD-22, A104
Customer Service
Sinopower Semiconductor, Inc.
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5635080
10
www.sinopowersemi.com
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - July, 2015
相关型号：
©2020 ICPDF网 联系我们和版权申明