SM8A01NSF [SINOPWER]
N-Channel Enhancement Mode MOSFET;
| 型号： | SM8A01NSF |
| 厂家： | 
Sinopower Semiconductor Inc |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总11页 (文件大小：624K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM8A01NSF/SM8A01NSFP
N-Channel Enhancement Mode MOSFET
Features
Pin Description
•
800V/13A,
RDS(ON)=0.38Ω(max.)@VGS=10V
VDS@Tj, max=930(typ.)
100% UIS + Rg Tested
Reliable and Rugged
Avalanche Rated
S
S
•
•
•
•
D
D
G
G
TO-220
TO-220FP
Lead Free and Green Devices Available
(RoHS Compliant)
D (2)
Applications
G (1)
•
AC/DC Power Conversion in Switched Mode
Power Supplies (SMPS).
•
Uninterruptible Power Supply (UPS).
Adapter.
S (3)
•
N-Channel MOSFET
Ordering and Marking Information
Package Code
F : TO-220
SM8A01NS
FP : TO-220FP
Assembly Material
Handling Code
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
Temperature Range
Package Code
TU : Tube (50ea/tube)
Assembly Material
G : Halogen and Lead Free Device
SM8A01NS F/FP :
XXXXX - Lot Code
SM8A01NS
XXXXX
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are
fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL
classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl
does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest
version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.4 - January, 2018
1
www.sinopowersemi.com
SM8A01NSF/SM8A01NSFP
(TA=25°C Unless Otherwise Noted)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
TJ
Drain-Source Voltage
800
±30
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Pulse Drain Current Tested
150
°C
°C
A
TSTG
IS
-55 to 150
13 a
IDP
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
40a
13 a
9 a
A
ID
Continuous Drain Current
A
208
PD
PD
Maximum Power Dissipation for TO-220
Maximum Power Dissipation for TO-220FP
83
W
35.5
14.2
0.6
RqJC
RqJC
RqJA
Thermal Resistance-Junction to Case for TO-220
Thermal Resistance-Junction to Case for TO-220FP
Thermal Resistance-Junction to Ambient
°C/W
3.5
62.5
Drain-Source Avalanche Ratings
dv/dt b
50
250
2.5
0.6
V/ns
mJ
A
MOSFET dv/dt ruggedness
c
EAS
Avalanche Energy, Single Pulsed
Avalanche Current
d
IAR
d
mJ
EAR
Repetitive Avalanche Energy
Note a Limited by maximum junction temperature.
：
Note b V =640V, I =13A.
：
DS
D
Note c I =2.5A, V =50V, T=25°C.
：
D
DD
j
Note d Repetitive Rating : Pulse width limited by maximum junction temperature.
：
Copyright © Sinopower Semiconductor, Inc.
Rev. A.4 - January, 2018
www.sinopowersemi.com
2
SM8A01NSF/SM8A01NSFP
(TA = 25°C unless otherwise noted)
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Static Characteristics
V =0V, I =250 A
800
-
930
-
-
-
m
GS
DS
BVDSS
Drain-Source Breakdown Voltage
V
TJ=150°C
-
VDS=640V, VGS=0V
TJ=150°C
-
1
IDSS
Zero Gate Voltage Drain Current
A
m
-
2.5
-
-
200
4.5
±100
VGS(th)
IGSS
Gate Threshold Voltage
V =V , I =250 A
3.5
-
V
nA
W
m
DS
GS DS
Gate Leakage Current
VGS=±30V, VDS=0V
VGS=10V, IDS=8A
e
RDS(ON)
Drain-Source On-state Resistance
-
0.33 0.38
Diode Characteristics
e
VSD
trr
Diode Forward Voltage
ISD=13A, VGS=0V
ISD=13A, VR=480V
-
-
-
-
0.87
385
7
1.3
V
Reverse Recovery Time
-
-
-
ns
Qrr
Reverse Recovery Charge
C
m
dl /dt=100A/ s
m
SD
Irm
Peak Reverse Recovery Current
37
A
Dynamic Characteristicsf
VGS=0V,VDS=0V,
F=1MHz
RG
Gate Resistance
-
1.45
-
W
Ciss
Coss
Crss
td(ON)
Tr
Input Capacitance
-
-
-
-
-
-
-
1820 2500
VGS=0V,
VDS=25V,
Frequency=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
745
45
16
45
44
34
-
-
-
-
-
-
pF
V =400V, R =30 ,
W
DD
L
IDS=13A, VGEN=10V,
R =6
ns
td(OFF)
Tf
Turn-off Delay Time
Turn-off Fall Time
W
G
Gate Charge Characteristicsf
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
-
-
-
55
11
26
75
-
VDS=640V, VGS=10V,
IDS=13A
nC
-
Note e Pulse test ; pulse width≤300ms, duty cycle≤2%.
：
Note f Guaranteed by design, not subject to production testing.
：
Copyright © Sinopower Semiconductor, Inc.
Rev. A.4 - January, 2018
www.sinopowersemi.com
3
SM8A01NSF/SM8A01NSFP
Typical Operating Characteristics
Power Dissipation : TO-220
Power Dissipation : TO-220FP
250
40
30
20
10
0
200
150
100
50
TC=25oC
0
TC=25oC
0
20 40 60 80 100 120 140 160
0
20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area : TO-220
Safe Operation Area : TO-220FP
VDS - Drain - Source Voltage (V)
VDS - Drain - Source Voltage (V)
Copyright © Sinopower Semiconductor, Inc.
Rev. A.4 - January, 2018
www.sinopowersemi.com
4
SM8A01NSF/SM8A01NSFP
Typical Operating Characteristics(Cont.)
Thermal Transient Impedance:TO-220
Thermal Transient Impedance:TO-220FP
3
3
1
1
Duty = 0.5
Duty = 0.5
0.2
0.1
0.2
0.1
0.1
0.1
0.05
0.05
0.02
0.02
0.01
0.01
0.01
0.01
Single Pulse
Single Pulse
Mounted on minimum pad
Mounted on minimum pad
RqJA :62.5oC/W
RqJA :62.5oC/W
1E-3
1E-3
1E-4 1E-3 0.01 0.1
1
10
100
1E-4 1E-3 0.01 0.1
1
10
100
SquareWave PulseDuration (sec)
SquareWave PulseDuration (sec)
Drain Current
Output Characteristics
40
15
VGS=8V,10,15V
12
9
30
20
10
0
7V
6
6V
3
TC=25oC,VG=10V
0
0
5
10
15
20
25
30
0
20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
VDS - Drain - Source Voltage (V)
Copyright © Sinopower Semiconductor, Inc.
Rev. A.4 - January, 2018
www.sinopowersemi.com
5
SM8A01NSF/SM8A01NSFP
Typical Operating Characteristics(Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
3.0
100
10
1
VGS = 10V
IDS = 8A
2.5
T=150oC
j
2.0
1.5
1.0
0.5
T=25oC
j
RON@T =25oC: 0.33W
j
0.0
0.1
-50 -25
0
25 50 75 100 125 150
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Tj - Junction Temperature (°C)
VSD - Source -Drain Voltage (V)
Capacitance
Gate Charge
10000
1000
100
10
10
Frequency=1MHz
VDS=640V
IDS=13A
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
Crss
1
5
10 15 20 25 30 35 40
0
10
20
30
40
50
60
VDS - Drain - Source Voltage (V)
QG -Gate Charge (nC)
Copyright © Sinopower Semiconductor, Inc.
Rev. A.4 - January, 2018
www.sinopowersemi.com
6
SM8A01NSF/SM8A01NSFP
Typical Operating Characteristics(Cont.)
Drain-Source On Resistance
BVDSS vs Junction Temperature
0.8
0.7
0.6
0.5
1.6
IDS=250mA
1.4
1.2
1.0
0.8
0.6
0.4
VGS=10V
0.4
0.3
0.2
0.1
0.0
0
5
10
15
20
25
30
-50 -25
0
25 50 75 100 125 150
ID -Drain Current (A)
VSD - Source -Drain Voltage (V)
Transfer Characteristics
100
10
1
T=150oC
j
T=25oC
j
T=-55oC
j
0.1
2
3
4
5
6
7
8
9
10
VGS - Gate-Source Voltage (V)
Copyright © Sinopower Semiconductor, Inc.
Rev. A.4 - January, 2018
www.sinopowersemi.com
7
SM8A01NSF/SM8A01NSFP
Avalanche Test Circuit and Waveforms
V
DS
V
DSX(SUS)
L
tp
V
DS
DUT
I
AS
RG
V
DD
V
DD
E
AS
I
L
tp
0.01
W
tAV
Switching Time Test Circuit and Waveforms
V
DS
RD
V
DS
90%
DUT
V
GS
RG
V
DD
10%
V
GS
tp
t
d(on)
tr
t
d(off)
tf
Copyright © Sinopower Semiconductor, Inc.
Rev. A.4 - January, 2018
www.sinopowersemi.com
8
SM8A01NSF/SM8A01NSFP
Disclaimer
Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to
development high quality and better performance products to satisfy all customers’ needs.
However, a product may fail to meet customer’s expectation or malfunction for various
situations.
All information which is shown in the datasheet is based on Sinopower’s research and
development result, therefore, Sinopower shall reserve the right to adjust the content and
monitor the production.
In order to unify the quality and performance, Sinopower has been following JEDEC while
defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each
product, different processes may cause slightly different results.
The technical information specified herein is intended only to show the typical functions of
and examples of application circuits for the products. Sinopower does not grant customers
explicitly or implicitly, any license to use or exercise intellectual property or other rights held
by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any
dispute arising from the use of such technical information.
The products are not designed or manufactured to be used with any equipment,
device or system which requires an extremely high level of reliability, such as the failure or
malfunction of which any may result in a direct threat to human life or a risk of human
injury. Sinopower shall bear no responsibility in any way for use of any of the
products for the above special purposes. If a product is intended to use for any such special
purpose, such as vehicle, military, or medical controller relevant applications, please contact
Sinopower sales representative before purchasing.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.4 - January, 2018
www.sinopowersemi.com
9
SM8A01NSF/SM8A01NSFP
Classification Profile
Copyright © Sinopower Semiconductor, Inc.
Rev. A.4 - January, 2018
www.sinopowersemi.com
10
SM8A01NSF/SM8A01NSFP
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
150 C
Preheat & Soak
100 C
°
°
Temperature min (T
)
smin
150 C
200 C
°
°
Temperature max (T
)
smax
60-120 seconds
60-120 seconds
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
(Tsmax to TP)
3 C/second max.
°
3 C/second max.
°
Liquidous temperature (TL)
Time at liquidous (tL)
183 C
60-150 seconds
217 C
60-150 seconds
°
°
Peak package body Temperature (Tp)*
See Classification Temp in table 1
See Classification Temp in table 2
Time (t )** within 5 C of the specified
°
P
20** seconds
30** seconds
classification temperature (T )
c
Average ramp-down rate (Tp to T
)
6 C/second max.
°
6 C/second max.
°
smax
Time 25 C to peak temperature
6 minutes max.
8 minutes max.
°
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Package
Thickness
Volume mm3
<350
Volume mm3
≥350
<2.5 mm
235 C
220 C
°
°
2.5 mm
≥
220 C
220 C
°
°
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
Volume mm3
<350
Volume mm3
350-2000
Volume mm3
>2000
260 C
<1.6 mm
260 C
260 C
°
°
°
1.6 mm – 2.5 mm
260 C
250 C
245 C
°
°
°
2.5 mm
250 C
245 C
245 C
°
≥
°
°
Reliability Test Program
Test item
Method
Description
SOLDERABILITY
HTRB
HTGB
PCT
TCT
JESD-22, B102
JESD-22, A108
JESD-22, A108
JESD-22, A102
JESD-22, A104
5 Sec, 245°C
1000 Hrs, 80% of VDS max @ Tjmax
1000 Hrs, 100% of VGS max @ Tjmax
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
Customer Service
Sinopower Semiconductor, Inc.
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5635080
Copyright © Sinopower Semiconductor, Inc.
Rev. A.4 - January, 2018
www.sinopowersemi.com
11
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