MBR10150CT [SIRECTIFIER]

; - 12号的铝制车身绘（ RAL 7032 ）


型号：	MBR10150CT
厂家：	SIRECTIFIER SEMICONDUCTORS
描述：	- 12号的铝制车身绘（ RAL 7032 ）二极管瞄准线功效局域网
文件：	总3页 (文件大小：53K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MBR10150CT

Power Schottky Rectifier - 10Amp 150Volt

□ Features

-Plastic package has Underwriters Laboratory Flammability Classifications 94V-0

-High Junction Temperature Capability

-Low forward voltage, high current capability

-High surge capacity

-Low power loss, high efficiency

TO-220AB

□ Application

-AC/DC Switching Adaptor

-Switch-Mode Power Supply

□ Absolute maximum ratings

Symbol

IF(AV)

Ratings

Unit

Conditions

At Tc=125ºC

Maximum repetitive peak

reverse voltage

150

120

VRRM

IFSM

8.3ms single half sine-wafe

single shot

0.92

At IF=5A, Tc=25ºC

VF(max)

ºC

-50 to +175

-50 to +150

Tstg

DIMENSIONS

INCHES

MIN

DIM

NOTE

□ Electrical characteristics

MAX

.602

.411

.116

.264

.344

.138

.547

.108

.035

.022

.157

.187

.057

.114

MIN

MAX

.579

.392

.104

.248

.325

.126

.524

.096

.030

.016

.146

.171

.049

.102

14.70 15.30

9.95

2.65

6.30

8.25

3.20

10.45

2.95

6.70

8.75

3.50

Parameters

Symbol

Ratings

Conditions

Maximum Instantaneous

Forward Voltage

0.92V

0.75V

50µA

10mA

Tc=25ºC

Tc=125ºC

Tc=25ºC

Tc=125ºC

13.30 13.90

Maximum Reverse Current At

Rated DC Blocking Voltage

2.45

0.75

0.40

3.70

4.35

1.25

2.60

2.75

0.90

0.55

4.00

4.75

1.45

2.90

Voltage Rate of Change

Typical Thermal Resistance,

Junction to Case

dv/dt 10,000 V/µs

4 ºC/W

Rated VR

Per diode

Rth (j-c)

Note: (1)Pulse Test : 380µs pulse width, 2% duty cycle

April 2004

http:// www.sirectifier.com

MBR10150CT

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

d= 0.2

d= 0.5

d= 0.1

Rth(j-a) = Rth(j-c)

d= 0.05

d= 1

Rth(j-a) = 15℃/W

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

100

125

150

175

IF(av)(A)

Tamb(℃)

Figure 1. Average forward power dissipation versus

average forward current (per diode)

Figure 2. Average forward current versus ambient

temperature (d= 0.5, per diode)

1.0

0.8

0.6

0.4

0.2

0.0

d= 0.5

Tc = 50

℃

d= 0.2

d= 0.1

Tc = 75℃

Tc = 125

℃

Single pulse

1E-3

1E-2

1E-1

1E+0

1E-3

1E-2

1E-1

1E+0

t(s)

tp(s)

Figure 3. Non repetitive surge peak forward current

versus overload duration (maximum values, per diode)

Figure 4. Relative variation of thermal impedance

junction to case versus pulse duration (per diode)

1E+5

1E+4

1E+3

1E+2

1E+1

1E+0

1E-1

1E-2

200

F = 1MHz

Tj = 25℃

= 175

℃

= 150

℃

100

= 125

= 75℃

= 25℃

100

200

100

125

150

VR(V)

Figure 5. Reverse leakage current versus reverse

voltage applied (ytpical values, per diode)

Figure 6. Junction capacitance versus reverse

voltage applied (typical values, per diode)

http:// www.sirectifier.com

MBR10150CT

100

= 125

℃

Tj = 25℃

Typical values

= 125

℃

0.1

0.0

0.2

0.4

0.6

0.8

1.0

VFM(V)

1.2

1.4

1.6

1.8

2.0

S(cm2)

Figure 8. Thermal resistance junction to ambient versus

copper surface under tab (Epoxy printed circuit board,

Figure 7. Forward voltage drop versus forward

current (maximum values, per diode)

copper thickness : 35µ m) (STPS10150CG only)

http:// www.sirectifier.com

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