MBR740 [SIRECTIFIER]
肖特基势垒二极管Schottky Barrier Diodes，高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes，Tj = -65°C ~ +175°C, Tjm = +175°C。; 肖特基势垒二极管肖特基势垒二极管，高结温低漏电流肖特基势垒二极管高TJM低IRRM肖特基势垒二极管， TJ = -65 ° C〜 + 175 ° C， TJM = + 175 ℃。
| 型号： | MBR740 |
| 厂家： | 
SIRECTIFIER SEMICONDUCTORS |
| 描述： | 肖特基势垒二极管Schottky Barrier Diodes，高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes，Tj = -65°C ~ +175°C, Tjm = +175°C。 |
| 文件： | 总2页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR730 thru MBR745
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
Dimensions TO-220AC
Dim.
Inches
Min. Max.
Milimeter
Min. Max.
A
C
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
12.70 14.73
14.23 16.51
9.66 10.66
A
C
C(TAB)
3.54
5.85
2.54
1.15
-
4.08
6.85
3.42
1.77
6.35
0.89
5.33
4.82
0.56
2.49
1.39
A=Anode, C=Cathode, TAB=Cathode
VRRM
V
VRMS
V
VDC
V
-
0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
0.64
4.83
3.56
0.38
2.04
0.64
MBR730
MBR735
MBR740
MBR745
30
21
30
35
40
45
35
24.5
28
40
45
31.5
Symbol
Characteristics
Maximum Ratings
Unit
I(AV)
Maximum Average Forward Rectified Current @TC=125oC
7.5
A
A
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
IFSM
150
dv/dt
Voltage Rate Of Change (Rated VR)
IF=7.5A @TJ=25oC
Maximum Forward
Voltage (Note 1)
10000
V/us
-
IF=7.5A @TJ=125oC
IF=15A @TJ=25oC
IF=15A @TJ=125oC
0.57
0.84
0.72
VF
V
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25oC
0.1
15
IR
mA
@TJ=125oC
3.5
oC/W
pF
oC
ROJC
CJ
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
Storage Temperature Range
400
-55 to +150
-55 to +175
TJ
TSTG
oC
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
MECHANICAL DATA
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* Case: TO-220AC molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MBR730 thru MBR745
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
10
8
150
100
50
6
4
RESISTIVE OR
INDUCTIVE LOAD
2
0
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
0
25
20
NUMBER OF CYCLES AT 60Hz
50
75
100
125
150
175
1
2
5
10
50
100
CASE TEMPERATURE , C
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
10
100
10
J
T = 125 C
1.0
0.1
1.0
0.1
J
T = 75 C
0.01
J
T = 25 C
J
T = 25 C
PULSE WIDTH 300us
2% Duty cycle
0.001
140
20
40
60
80
100
120
0
0.8
0.9
0.1 0.2
0.3
0.4
0.5
0.6
0.7
1.0
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
FIG.5 - TYPICAL JUNCTION CAPACITANCE
10000
1000
J
T = 25 C, f= 1MHz
100
0.1
1
REVERSE VOLTAGE , VOLTS
100
4
10
相关型号：
MBR740-BP
Rectifier Diode, Schottky, 1 Phase, 1 Element, 7.5A, 40V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC
MBR740-BP-HF
Rectifier Diode, Schottky, 1 Phase, 1 Element, 7.5A, 40V V(RRM), Silicon, TO-220AC,
MCC
MBR745
肖特基势垒二极管Schottky Barrier Diodes，高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes，Tj = -65°C ~ 175°C, Tjm = 175°C。
SIRECTIFIER
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