MUR1520 [SIRECTIFIER]

快速恢复二极管Fast Recovery Diodes，超快恢复二极管Ultra Fast Recovery Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。; 快速恢复二极管快恢复二极管，超快恢复二极管超快恢复二极管， TJ = -40 ° C〜 125°C ， TJM = 125°C 。


型号：	MUR1520
厂家：	SIRECTIFIER SEMICONDUCTORS
描述：	快速恢复二极管Fast Recovery Diodes，超快恢复二极管Ultra Fast Recovery Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。快速恢复二极管快恢复二极管，超快恢复二极管超快恢复二极管， TJ = -40 ° C〜 125°C ， TJM = 125°C 。二极管快恢复二极管超快恢复二极管局域网快速恢复二极管
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MUR1520, MUR1560

Ultra Fast Recovery Diodes

Dimensions TO-220AC

Dim.

Inches

Min. Max.

Milimeter

Min. Max.

0.500 0.580

0.560 0.650

0.380 0.420

0.139 0.161

2.300 0.420

0.100 0.135

0.045 0.070

12.70 14.73

14.23 16.51

9.66 10.66

C(TAB)

3.54

5.85

2.54

1.15

4.08

6.85

3.42

1.77

6.35

0.89

5.33

4.82

0.56

2.49

1.39

A=Anode, C=Cathode, TAB=Cathode

0.250

0.025 0.035

0.190 0.210

0.140 0.190

0.015 0.022

0.080 0.115

0.025 0.055

0.64

4.83

3.56

0.38

2.04

0.64

VRSM

VRRM

MUR1520

MUR1560

200

600

200

600

Symbol

Test Conditions

Maximum Ratings

Unit

TVJ=TVJM

150

IFRMS

IFAVM

IFRM

TC=100^oC; rectangular, d=0.5

tp<10us; rep. rating, pulse width limited by TVJM

TVJ=45^oC

t=10ms (50Hz), sine

t=8.3ms (60Hz), sine

t=10ms(50Hz), sine

t=8.3ms(60Hz), sine

100

110

IFSM

TVJ=150^oC

TVJ=45^oC

t=10ms (50Hz), sine

t=8.3ms (60Hz), sine

t=10ms(50Hz), sine

t=8.3ms(60Hz), sine

I²t

A²s

^oC

TVJ=150^oC

-40...+150

150

-40...+150

TVJ

TVJM

Tstg

Ptot

TC=25^oC

0.4...0.6

Mounting torque

Weight

MUR1520, MUR1560

Ultra Fast Recovery Diodes

Symbol

Test Conditions

Characteristic Values

Unit

typ.

max.

TVJ=25^oC; VR=VRRM

TVJ=25 C; VR=0.8 VRRM

TVJ=125 C; VR=0.8 VRRM

IF=15A; TVJ=150^oC

1.5

1.7

TVJ=25^oC

For power-loss calculations only

1.12

23.2

VTO

TVJ=TVJM

RthJC

RthCK

RthJA

0.5

K/W

IF=1A; -di/dt=50A/us; VR=30V; TVJ=25^oC

VR=350V; IF=15A; -diF/dt=100A/us; L<0.05uH; TVJ=100 C

trr

4.4

IRM

FEATURES

APPLICATIONS

ADVANTAGES

* International standard package

JEDEC TO-220AC

* Antiparallel diode for high frequency

switching devices

* High reliability circuit operation

* Low voltage peaks for reduced

protection circuits

* Planar passivated chips

* Very short recovery time

* Extremely low switching losses

* Low IRM-values

* Antisaturation diode

* Snubber diode

* Free wheeling diode in converters

and motor control circuits

* Rectifiers in switch mode power

supplies (SMPS)

* Low noise switching

* Low losses

* Operating at lower temperature or

space saving by reduced cooling

* Soft recovery behaviour

* Inductive heating and melting

* Uninterruptible power supplies (UPS)

* Ultrasonic cleaners and welders

MUR1520, MUR1560

Ultra Fast Recovery Diodes

Fig. 1 Forward current

versus voltage drop.

Fig. 2 Recovery charge versus -di_F/dt.

Fig. 3 Peak reverse current versus

-di_F/dt.

Fig. 4 Dynamic parameters versus

junction temperature.

Fig. 5 Recovery time versus -di_F/dt.

Fig. 6 Peak forward voltage

versus di_F/dt.

Fig. 7 Transient thermal impedance junction to case.

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