SBL1650CT [SIRECTIFIER]

肖特基势垒二极管Schottky Barrier Diodes，低压降肖特基势垒二极管Low VF Schottky Barrier Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。; 肖特基势垒二极管肖特基势垒二极管，低压降肖特基势垒二极管低VF肖特基势垒二极管， TJ = -40 ° C〜 125°C ， TJM = 125°C 。


型号：	SBL1650CT
厂家：	SIRECTIFIER SEMICONDUCTORS
描述：	肖特基势垒二极管Schottky Barrier Diodes，低压降肖特基势垒二极管Low VF Schottky Barrier Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。肖特基势垒二极管肖特基势垒二极管，低压降肖特基势垒二极管低VF肖特基势垒二极管， TJ = -40 ° C〜 125°C ， TJM = 125°C 。二极管瞄准线功效局域网
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SBL1650CT thru SBL1660CT

Low VF Schottky Barrier Rectifiers

Dimensions TO-220AB

Dim.

Inches

Min. Max.

Milimeter

Min. Max.

0.500 0.550

0.580 0.630

0.390 0.420

0.139 0.161

0.230 0.270

0.100 0.125

0.045 0.065

0.110 0.230

0.025 0.040

12.70 13.97

14.73 16.00

9.91 10.66

C(TAB)

3.54

5.85

2.54

1.15

2.79

0.64

2.54

4.32

1.14

0.35

2.29

4.08

6.85

3.18

1.65

5.84

1.01

BSC

4.82

1.39

0.56

2.79

A=Anode, C=Cathode, TAB=Cathode

VRRM

VRMS

VDC

0.100

BSC

0.170 0.190

0.045 0.055

0.014 0.022

0.090 0.110

SBL1650CT

SBL1660CT

Symbol

Characteristics

Maximum Ratings

Unit

I(AV)

IFSM

Maximum Average Forward Rectified Current @TC=95^oC

Peak Forward Surge Current 8.3ms Single Half-Sine-Wave

Superimposed On Rated Load (JEDEC METHOD)

250

0.7

Maximum Forward Voltage At 8.0A DC (Note 1)

Maximum DC Reverse Current

At Rated DC Blocking Voltage

@TJ=25^oC

0.5

@TJ=100^oC

ROJC

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

Operating Temperature Range

Storage Temperature Range

350

^oC/W

^oC

2.5

-55 to +125

-55 to +150

TSTG

^oC

NOTES: 1. 300us Pulse Width, 2% Duty Cycle.

2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.

3. Thermal Resistance Junction To Case.

FEATURES

MECHANICAL DATA

* Metal of silicon rectifier, majority carrier conducton

* Guard ring for transient protection

* Low power loss, high efficiency

* High current capability, low VF

* Case: TO-220AB molded plastic

* Polarity: As marked on the body

* Weight: 0.08 ounces, 2.24 grams

* Mounting position: Any

* High surge capacity

* For use in low voltage, high frequency inverters, free

whelling, and polarity protection applications

SBL1650CT thru SBL1660CT

Low VF Schottky Barrier Rectifiers

FIG.1 - FORWARD CURRENT DERATING CURVE

FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT

300

250

200

150

100

RESISTIVE OR INDUCTIVE LOAD

8.3ms Single Half-Sine-Wave

(JEDEC METHOD)

NUMBER OF CYCLES AT 60Hz

100

125

150

175

100

CASE TEMPERATURE , C

FIG.3 - TYPICAL REVERSE CHARACTERISTICS

FIG.4 - TYPICAL FORWARD CHARACTERISTICS

1000

100

TJ = 100 C

TJ = 75 C

1.0

0.1

TJ = 25 C

0.1

TJ = 25 C

PULSE WIDTH 300usa

2% Duty cycle

0.01

140

100

120

0.8

0.9

0.1 0.2

0.3

0.4

0.5

0.6

0.7

1.0

INSTANTANEOUS FORWARD VOLTAGE , VOLTS

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

FIG.5 - TYPICAL JUNCTION CAPACITANCE

1000

100

TJ = 25 C, f= 1MHz

0.1

100

REVERSE VOLTAGE , VOLTS

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