SDD100N08 [SIRECTIFIER]
整流二极管Diode Rectifiers，二极管/二极管整流模块Diode-Diode Modules。; 整流二极管二极管整流器，二极管/二极管整流模块二极管，二极管模块。
| 型号： | SDD100N08 |
| 厂家： | 
SIRECTIFIER SEMICONDUCTORS |
| 描述： | 整流二极管Diode Rectifiers，二极管/二极管整流模块Diode-Diode Modules。 |
| 文件： | 总4页 (文件大小：994K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDD100
Diode-Diode Modules
Dimensions in mm (1mm=0.0394")
Type
VRSM
V
VRRM
V
SDD100N08
SDD100N12
SDD100N14
SDD100N16
SDD100N18
900
800
1300
1500
1700
1900
1200
1400
1600
1800
Symbol
Test Conditions
Maximum Ratings
Unit
TVJ=TVJM
180
100
IFRMS
IFAVM
A
TC=100oC; 180o sine
TVJ=45oC
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
1700
1950
1540
1800
IFSM
A
TVJ=45oC
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
14450
15700
11850
13400
i2dt
A2s
-40...+150
150
-40...+125
TVJ
TVJM
Tstg
oC
50/60Hz, RMS
IISOL<1mA
t=1min
t=1s
3000
3600
V~
VISOL
_
Mounting torque (M5)
Terminal connection torque (M5)
2.5-4/22-35
2.5-4/22-35
Nm/lb.in.
g
Md
Typical including screws
90
Weight
SDD100
Diode-Diode Modules
Symbol
Test Conditions
Characteristic Values
Unit
TVJ=TVJM; VR=VRRM
IF=300A; TVJ=25oC
15
1.6
0.8
2.3
170
45
mA
V
IR
VF
For power-loss calculations only
V
VTO
rT
m
TVJ=TVJM
TVJ=125oC; IF=50A; -di/dt=3A/us
uC
A
QS
IRM
per diode; DC current
per module
0.35
0.175
K/W
K/W
RthJC
RthJK
per diode; DC current
per module
0.55
0.275
Creepage distance on surface
Strike distance through air
12.7
9.6
50
mm
mm
m/s2
dS
dA
a
Maximum allowable acceleration
FEATURES
APPLICATIONS
ADVANTAGES
* International standard package
* Supplies for DC power equipment
* DC supply for PWM inverter
* Field supply for DC motors
* Battery DC power supplies
* Space and weight savings
* Simple mounting
* Copper
base plate
* Planar passivated chips
* Isolation voltage 3600 V~
* Improved temperature and power
cycling
* Reduced protection circuits
SDD100
Diode-Diode Modules
Fig. 1 Surge overload current
IFSM: Crest value, t: duration
Fig. 2 i2dt versus time (1-10 ms)
Fig. 2a Maximum forward current
at case temperature
Fig. 3 Power dissipation versus
forward current and ambient
temperature (per diode)
Fig. 4 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
2 x SDD100
SDD100
Diode-Diode Modules
Fig. 5 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
3 x SDD100
Fig. 6 Transient thermal impedance
junction to case (per diode)
RthJC for various conduction angles d:
d
RthJC (K/W)
DC
0.35
0.37
0.39
0.43
0.47
180oC
120oC
60oC
30oC
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
2
3
0.013
0.072
0.265
0.0014
0.062
0.375
Fig. 7 Transient thermal impedance
junction toheatsink(per diode)
RthJK for various conduction angles d:
d
RthJK (K/W)
DC
0.55
0.57
0.59
0.63
0.67
180oC
120oC
60oC
30oC
Constants for ZthJK calculation:
i
Rthi (K/W)
ti (s)
1
2
3
4
0.013
0.072
0.265
0.2
0.0014
0.062
0.375
1.32
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