SDD190N16 [SIRECTIFIER]

整流二极管Diode Rectifiers，二极管/二极管整流模块Diode-Diode Modules。; 整流二极管二极管整流器，二极管/二极管整流模块二极管，二极管模块。


型号：	SDD190N16
厂家：	SIRECTIFIER SEMICONDUCTORS
描述：	整流二极管Diode Rectifiers，二极管/二极管整流模块Diode-Diode Modules。整流二极管二极管整流器，二极管/二极管整流模块二极管，二极管模块。整流二极管
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SDD190

Diode-Diode Modules

Dimensions in mm (1mm=0.0394")

Type

VRSM

VRRM

SDD190N08

SDD190N12

SDD190N14

SDD190N16

SDD190N18

900

800

1300

1500

1700

1900

1200

1400

1600

1800

Symbol

Test Conditions

Maximum Ratings

Unit

TVJ=TVJM

300

190

IFRMS

IFAVM

TC=100^oC; 180^osine

TVJ=45^oC

VR=0

TVJ=TVJM

VR=0

t=10ms (50Hz), sine

t=8.3ms (60Hz), sine

t=10ms(50Hz), sine

t=8.3ms(60Hz), sine

6600

7290

5600

6200

IFSM

TVJ=45^oC

VR=0

TVJ=TVJM

VR=0

t=10ms (50Hz), sine

t=8.3ms (60Hz), sine

t=10ms(50Hz), sine

t=8.3ms(60Hz), sine

218000

221000

157000

160000

i²dt

A²s

-40...+150

150

-40...+125

TVJ

TVJM

Tstg

^oC

50/60Hz, RMS

IISOL<1mA

t=1min

t=1s

3000

3600

VISOL

Mounting torque (M6)

Terminal connection torque (M6)

2.25-2.75/20-25

4.5-5.5/40-48

Nm/lb.in.

Typical including screws

120

Weight

SDD190

Diode-Diode Modules

Symbol

Test Conditions

Characteristic Values

Unit

TVJ=TVJM; VR=VRRM

IF=300A; TVJ=25^oC

1.15

0.8

For power-loss calculations only

VTO

0.8

TVJ=TVJM

TVJ=125^oC; IF=300A; -di/dt=50A/us

550

235

IRM

per diode; DC current

per module

0.21

0.105

K/W

RthJC

RthJK

per diode; DC current

per module

0.31

0.155

Creepage distance on surface

Strike distance through air

12.7

9.6

m/s²

Maximum allowable acceleration

FEATURES

APPLICATIONS

ADVANTAGES

* International standard package

* Direct copper bonded Al2O3-ceramic

base plate

* Supplies for DC power equipment

* DC supply for PWM inverter

* Field supply for DC motors

* Battery DC power supplies

* Space and weight savings

* Simple mounting

* Improved temperature and power

cycling

* Reduced protection circuits

* Planar passivated chips

* Isolation voltage 3600 V~

SDD190

Diode-Diode Modules

Fig. 1 Surge overload current

I_FSM: Crest value, t: duration

Fig. 2 i²dt versus time (1-10 ms)

Fig. 2a Maximum forward current

at case temperature

Fig. 3 Power dissipation versus

forward current and ambient

temperature (per diode)

Fig. 4 Single phase rectifier bridge:

Power dissipation versus direct

output current and ambient

temperature

R = resistive load

L = inductive load

2 x SDD190

SDD190

Diode-Diode Modules

Fig. 5 Three phase rectifier bridge:

Power dissipation versus direct

output current and ambient

temperature

3 x SDD190

Fig. 6 Transient thermal impedance

junction to case (per diode)

R_thJCfor various conduction angles d:

R_thJC(K/W)

0.210

0.223

0.233

0.260

0.295

180^oC

120^oC

60^oC

30^oC

Constants for Z_thJCcalculation:

R_thi(K/W)

t_i(s)

0.0087

0.0163

0.185

0.001

0.065

0.4

Fig. 7 Transient thermal impedance

junction toheatsink(per diode)

R_thJKfor various conduction angles d:

R_thJK(K/W)

0.31

180^oC

120^oC

60^oC

30^oC

0.323

0.333

0.360

0.395

Constants for Z_thJKcalculation:

R_thi(K/W)

t_i(s)

0.0087

0.0163

0.185

0.1

0.001

0.065

0.4

1.29

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