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STD/SDT18GK08 [SIRECTIFIER]

晶闸管（可控硅）Thyristors (SCRs)，晶闸管/二极管模块Thyristor-Diode Modules。; 晶闸管（可控硅）晶闸管（SCR ） ，晶闸管/二极管模块晶闸管，二极管模块。
STD/SDT18GK08
型号： STD/SDT18GK08
厂家： SIRECTIFIER SEMICONDUCTORS    SIRECTIFIER SEMICONDUCTORS
描述：

晶闸管（可控硅）Thyristors (SCRs)，晶闸管/二极管模块Thyristor-Diode Modules。
晶闸管（可控硅）晶闸管（SCR ） ，晶闸管/二极管模块晶闸管，二极管模块。

可控硅 二极管
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STD/SDT18  
Thyristor-Diode Modules, Diode-Thyristor Modules  
Dimensions in mm (1mm=0.0394")  
Type  
VRSM  
VDSM  
V
VRRM  
VDRM  
V
STD/SDT18GK08 900  
STD/SDT18GK12 1300  
STD/SDT18GK14 1500  
STD/SDT18GK16 1700  
STD/SDT18GK18 1900  
800  
1200  
1400  
1600  
1800  
Symbol  
Test Conditions  
Maximum Ratings  
Unit  
I
I
TRMS, IFRMS TVJ=TVJM  
40  
18  
A
TAVM, IFAVM TC=85oC; 180o sine  
TVJ=45oC  
VR=0  
TVJ=TVJM  
VR=0  
t=10ms (50Hz), sine  
t=8.3ms (60Hz), sine  
t=10ms(50Hz), sine  
t=8.3ms(60Hz), sine  
400  
420  
350  
370  
ITSM, IFSM  
A
TVJ=45oC  
t=10ms (50Hz), sine  
t=8.3ms (60Hz), sine  
t=10ms(50Hz), sine  
t=8.3ms(60Hz), sine  
800  
730  
600  
570  
VR=0  
i2dt  
A2s  
TVJ=TVJM  
VR=0  
150  
TVJ=TVJM  
f=50Hz, tp=200us  
(di/dt)cr VD=2/3VDRM  
IG=0.45A  
repetitive, IT=45A  
A/us  
500  
non repetitive, IT=ITAVM  
VDR=2/3VDRM  
diG/dt=0.45A/us  
TVJ=TVJM;  
RGK= ; method 1 (linear voltage rise)  
1000  
V/us  
W
(dv/dt)cr  
TVJ=TVJM  
PGM  
tp=30us  
tp=300us  
10  
5
IT=ITAVM  
0.5  
10  
W
V
PGAV  
VRGM  
-40...+125  
125  
-40...+125  
TVJ  
TVJM  
Tstg  
oC  
50/60Hz, RMS  
IISOL<1mA  
t=1min  
t=1s  
3000  
3600  
VISOL  
V~  
_
Mounting torque (M5)  
Terminal connection torque (M5)  
2.5-4.0/22-35  
2.5-4.0/22-35  
Nm/lb.in.  
g
Md  
Typical including screws  
Weight  
90  
STD/SDT18  
Thyristor-Diode Modules, Diode-Thyristor Modules  
Symbol  
Test Conditions  
Characteristic Values  
Unit  
TVJ=TVJM; VR=VRRM; VD=VDRM  
IT, IF=80A; TVJ=25oC  
For power-loss calculations only (TVJ=125oC)  
3
mA  
V
IRRM, IDRM  
VT, VF  
VTO  
2.05  
0.85  
18  
V
m
rT  
VD=6V;  
TVJ=25oC  
TVJ=-40oC  
1.5  
1.6  
V
VGT  
IGT  
VD=6V;  
TVJ=25oC  
100  
200  
mA  
TVJ=-40oC  
TVJ=TVJM;  
VD=2/3VDRM  
0.2  
10  
V
VGD  
IGD  
mA  
TVJ=25oC; tp=10us; VD=6V  
IG=0.45A; diG/dt=0.45A/us  
TVJ=25oC; VD=6V; RGK=  
TVJ=25oC; VD=1/2VDRM  
IG=0.45A; diG/dt=0.45A/us  
IL  
IH  
450  
200  
2
mA  
mA  
us  
tgd  
TVJ=TVJM; IT=20A; tp=200us; -di/dt=10A/us  
VR=100V; dv/dt=20V/us; VD=2/3VDRM  
typ.  
150  
us  
tq  
TVJ=TVJM; IT, IF=25A; -di/dt=0.64A/us  
50  
6
uC  
A
QS  
IRM  
per thyristor/diode; DC current  
per module  
1.3  
0.65  
K/W  
K/W  
RthJC  
RthJK  
per thyristor/diode; DC current  
per module  
1.5  
0.75  
Creeping distance on surface  
Strike distance through air  
12.7  
9.6  
50  
mm  
mm  
m/s2  
dS  
dA  
a
Maximum allowable acceleration  
FEATURES  
* International standard package  
APPLICATIONS  
* DC motor control  
ADVANTAGES  
* Space and weight savings  
* Copper  
* Planar passivated chips  
* Isolation voltage 3600 V~  
* Softstart AC motor controller  
* Light, heat and temperature  
control  
* Simple mounting with two screws  
* Improved temperature and power  
cycling  
base plate  
* Reduced protection circuits  
STD/SDT18  
Thyristor-Diode Modules, Diode-Thyristor Modules  
Fig. 1 Surge overload current  
ITSM: Crest value, t: duration  
Fig. 2 i2dt versus time (1-10 ms)  
Fig. 2a Maximum forward current  
at case temperature  
10  
1: IGT, TVJ = 125 C  
2: IGT, TVJ  
= 25 C  
V
3: IGT, TVJ = -40 C  
VG  
3
2
6
1
5
1
4
4: PGAV = 0.5 W  
5: PGM 5 W  
6: PGM = 10 W  
=
IGD, TVJ = 125 C  
0.1  
100  
101  
102  
103  
IG  
104  
mA  
Fig. 3 Power dissipation versus on-state current and ambient temperature  
(per thyristor)  
Fig. 4 Gate trigger characteristics  
1000  
TVJ = 25 C  
s
tgd  
typ.  
Limit  
100  
10  
3 x STD/SDT18  
1
10  
mA  
100  
1000  
IG  
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current  
and ambient temperature  
Fig. 6 Gate trigger delay time  
STD/SDT18  
Thyristor-Diode Modules, Diode-Thyristor Modules  
Fig. 7 Three phase AC-controller:  
Power dissipation versus RMS  
output current and ambient  
temperature  
3 x STD/SDT18  
STD/SDT18  
Fig. 8 Transient thermal impedance  
junction to case (per thyristor)  
RthJC for various conduction angles d:  
d
RthJC (K/W)  
DC  
1.3  
180oC  
120oC  
60oC  
30oC  
1.35  
1.39  
1.42  
1.45  
Constants for ZthJC calculation:  
i
Rthi (K/W)  
ti (s)  
1
2
3
0.018  
0.041  
1.241  
0.0033  
0.0216  
0.191  
Fig. 9 Transient thermal impedance  
junction toheatsink(perthyristor)  
STD/SDT18  
RthJK for various conduction angles d:  
d
RthJK (K/W)  
DC  
1.5  
180oC  
120oC  
60oC  
30oC  
1.55  
1.59  
1.62  
1.65  
Constants for ZthJK calculation:  
i
Rthi (K/W)  
ti (s)  
1
2
3
4
0.018  
0.041  
1.241  
0.2  
0.0033  
0.0216  
0.191  
0.46  

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