STOE30G06 [SIRECTIFIER]
High Efficiency Thyristor Discretes;型号: | STOE30G06 |
厂家: | SIRECTIFIER SEMICONDUCTORS |
描述: | High Efficiency Thyristor Discretes |
文件: | 总3页 (文件大小:440K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
STOE30G06 thru STOE30G12
High Efficiency Thyristor Discretes
Dimensions TO-247AD
Dim.
Millimeter
Min. Max. Min.
Inches
Max.
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
A
K
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
A(TAB)
G
A
G
K
E
F
4.32 5.49 0.170 0.216
5.4
6.2 0.212 0.244
K=Cathode, A=Anode, G=Cate
G
H
1.65 2.13 0.065 0.084
-
4.5
-
0.177
VRRM
VRSM
J
K
1.0
1.4 0.040 0.055
V
V
10.8 11.0 0.426 0.433
STOE30G06
STOE30G08
STOE30G10
600
800
1000
700
900
1100
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
N
1.5 2.49 0.087 0.102
STOE30G12
1200
1300
Symbol
Test Conditions
Maximum Ratings
Unit
I
I
TRMS
TVJ=TVJM
47
30
A
TC=120oC; 180o sine
TAVM
TVJ=45oC
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
300
320
270
290
ITSM
A
TVJ=45oC
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
450
440
365
355
i2t
A2s
150
TVJ=TVJM
repetitive, IT=90A
f=50Hz, tp=200us
(di/dt)cr VD=2/3VDRM
IG=0.3A
A/us
500
non repetitive, IT=30A
diG/dt=0.3A/us
TVJ=TVJM;
RGK= ; method 1 (linear voltage rise)
VDR=2/3VDRM
1000
V/us
W
(dv/dt)cr
TVJ=TVJM
PGM
tp=30us
tp=300us
10
5
IT=ITAVM
0.5
10
W
V
PGAV
VRGM
-55...+150
150
-55...+150
TVJ
TVJM
Tstg
oC
Md
Fc
Mounting torque (M3)
Mounting force with clip
0.8...1.2
20...120
Nm
N
Weight
6
g
typical
P1
©2012 SIRECTIFIER All rights reserved
www.sirectifier.com
STOE30G06 thru STOE30G12
High Efficiency Thyristor Discretes
Symbol
Test Conditions
Characteristic Values
Unit
TVJ=TVJM; VR=VRRM; VD=VDRM
5
mA
V
IR, ID
VT
IT=30A; TVJ=25oC
For power-loss calculations only (TVJ=150oC)
1.28
0.86
15
V
VTO
rT
m
VD=6V;
VD=6V;
TVJ=25oC
TVJ=-40oC
1.3
1.6
V
VGT
IGT
TVJ=25oC
TVJ=-40oC
TVJ=125oC
28
50
25
mA
TVJ=TVJM;
VD=2/3VDRM
0.2
V
VGD
IGD
1
mA
TVJ=25oC; tp=10us;
IG=0.3A; diG/dt=0.3A/us
TVJ=25oC; VD=6V; RGK=
TVJ=25oC; VD=1/2VDRM
IG=0.3A; diG/dt=0.3A/us
IL
IH
90
60
2
mA
mA
us
tgd
0.50
K/W
RthJC
DC current
0.25
K/W
m/s2
RthJH
DC current
Max. acceleration, 50 Hz
50
a
Product Marking
Sirectifier
Logo
Part Number
DateCode
STOE30G12
YYWW
K
A
G
P2
©2012 SIRECTIFIER All rights reserved
www.sirectifier.com
STOE30G06 thru STOE30G12
High Efficiency Thyristor Discretes
60
50
40
30
20
10
0
280
240
200
160
120
80
1000
VR = 0 V
80% V
50 Hz,
RRM
TVJ
=
5°C
IT
TVJ = 45°C
I2t
ITSM
[A]
[A]
[A2s]
100
TVJ = 125°C
TVJ = 125°C
TVJ = 150°C
125°C
TVJ = 25°C
1.0 1.5
0.5
2.0
0.001
0.01
0.1
t [s]
Fig. 2 Surge overload current
ITSM: crest value, t: duration
1
1
2
3
7
4
8
5
19
6
0
VT [V]
t [ms]
Fig. 3 I2t versus time (1-10 s)
Fig. 1 Forward characteristics
IGD: TVJ = 125°C
102
101
100
10-1
80
60
40
20
0
4
3
2
1
0
dc =
1
0.5
0.4
0.33
0.17
0.08
TVJ = 125°C
VG
[V]
ITAVM
[A]
tgd
[μs]
lim.
typ.
IGD: VJ = 25°C
10-2
10-1
100
101
0
40
80
120
1
6
0
0
25
50
IG [mA]
75
IG [A]
Tcase [°C]
Fig. 6 Max. forward current at
case temperature
Fig. 5 Gate controlled delay time tgd
Fig. 4 Gate voltage & gate current
Triggering: A = no; B = possible; C = safe
60
50
40
0.6
dc =
1
RthHA
0.6
0.8
1.0
2.0
4.0
8.0
0.5
0.5
0.4
0.33
0.17
0.08
0.4
0.3
P(AV)
30
[W]
i
Rthi (K/W)
ti (s)
[K/W]
1
2
3
4
5
0.08
0.06
0.2
0.05
0.11
0.01
0.001
0.02
0.2
20
10
0
0.2
0.1
0.0
0.11
0
10
20
30
40
1
10
100
[ms]
1000
10000
0
25 50 75 100 125 150
IF(AV) [A]
Tamb [°C]
Fig. 7 Transient thermal impedance junction to case
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
P3
©2012 SIRECTIFIER All rights reserved
www.sirectifier.com
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