STPR2010CT [SIRECTIFIER]
快速恢复二极管Fast Recovery Diodes，超快恢复二极管Ultra Fast Recovery Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。; 快速恢复二极管快恢复二极管，超快恢复二极管超快恢复二极管， TJ = -40 ° C〜 125°C ， TJM = 125°C 。
| 型号： | STPR2010CT |
| 厂家： | 
SIRECTIFIER SEMICONDUCTORS |
| 描述： | 快速恢复二极管Fast Recovery Diodes，超快恢复二极管Ultra Fast Recovery Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。 |
| 文件： | 总2页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STPR2010CT thru STPR2020CT
Ultra Fast Recovery Diodes
Dimensions TO-220AB
Dim.
Inches
Min. Max.
Milimeter
Min. Max.
A
C
A
A
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
12.70 13.97
14.73 16.00
9.91 10.66
C
C(TAB)
A
3.54
5.85
2.54
1.15
2.79
0.64
2.54
4.32
1.14
0.35
2.29
4.08
6.85
3.18
1.65
5.84
1.01
BSC
4.82
1.39
0.56
2.79
A=Anode, C=Cathode, TAB=Cathode
VRRM
V
VRMS
V
VDC
V
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
STPR2010CT
STPR2020CT
100
200
70
100
200
140
Symbol
Characteristics
Maximum Ratings
Unit
I(AV)
Maximum Average Forward Rectified Current @TC=95oC
20
A
A
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
IFSM
125
IF=10A @TJ=25oC
Maximum Forward Voltage At
IF=10A @TJ=125oC
1.1
1.0
1.25
1.20
VF
IR
Pulse Width=300us
V
IF=20A @TJ=25oC
2% Duty Cycle
IF=20A @TJ=125oC
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25oC
5
100
uA
@TJ=100oC
CJ
Typical Junction Capacitance Per Element (Note 1)
Maximum Reverse Recovery Time (Note 2)
Typical Thermal Resistance (Note 3)
100
35
pF
ns
oC/W
oC
TRR
ROJC
1.5
TJ,TSTG Operating And Storage Temperature Range
-55 to +150
NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.
3. Thermal Resistance Junction To Case.
FEATURES
MECHANICAL DATA
* Glass passivated chip
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
* Superfast switching time for high efficiency
* Low forward voltage drop and high current capability
* Low reverse leakage current
* High surge capacity
STPR2010CT thru STPR2020CT
Ultra Fast Recovery Diodes
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
20
15
150
125
100
75
10
5
50
25
RESISTIVE OR INDUCTIVE LOAD
Single Half-Sine-Wave
(JEDEC METHOD)
0
0
25
20
NUMBER OF CYCLES AT 60Hz
50
75
100
125
150
175
1
2
5
10
50
100
CASE TEMPERATURE , C
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
1000
100
100
J
T = 125 C
J
T = 125 C
10
10
J
T = 25 C
J
T = 100 C
1.0
1.0
0.1
0.1
.01
J
T = 25 C
PULSE WIDTH 300us
2% Duty cycle
120
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
20
60
100
0
1.4
1.6
0
0.2
0.4
0.6
0.8
1.0
1.2
1.8
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
100
J
T = 25 C, f= 1MHz
10
0.1
1
REVERSE VOLTAGE , VOLTS
100
4
10
相关型号：
STPR2020CT
快速恢复二极管Fast Recovery Diodes，超快恢复二极管Ultra Fast Recovery Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。
SIRECTIFIER
STPR502D
快速恢复二极管Fast Recovery Diodes，超快恢复二极管Ultra Fast Recovery Diodes，Tj = -40°C ~ +125°C, Tjm = +125°C。
SIRECTIFIER
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