SUR20100 [SIRECTIFIER]
快速恢复二极管Fast Recovery Diodes，软恢复特性超快恢复外延二极管Soft Recovery Behaviour Ultra Fast Recovery，Epitaxial Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。; 快速恢复二极管快恢复二极管，软恢复特性超快恢复外延二极管的软恢复行为超快恢复外延二极管， TJ = -40 ° C〜 125°C ， TJM = 125°C 。
| 型号： | SUR20100 |
| 厂家： | 
SIRECTIFIER SEMICONDUCTORS |
| 描述： | 快速恢复二极管Fast Recovery Diodes，软恢复特性超快恢复外延二极管Soft Recovery Behaviour Ultra Fast Recovery，Epitaxial Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。 |
| 文件： | 总3页 (文件大小：206K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUR20100 thru SUR20120
Ultra Fast Recovery Epitaxial Diodes
Dimensions TO-220AC
Dim.
Inches
Min. Max.
Milimeter
Min. Max.
A
C
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
12.70 14.73
14.23 16.51
9.66 10.66
A
C
C(TAB)
3.54
5.85
2.54
1.15
-
4.08
6.85
3.42
1.77
6.35
0.89
5.33
4.82
0.56
2.49
1.39
A=Anode, C=Cathode, TAB=Cathode
-
0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
0.64
4.83
3.56
0.38
2.04
0.64
VRSM
VRRM
V
1000
1200
V
SUR20100
SUR20120
1000
1200
Symbol
Test Conditions
Maximum Ratings
Unit
TVJ=TVJM
70
17
220
IFRMS
IFAVM
IFRM
TC=85oC; rectangular, d=0.5
tp<10us; rep. rating, pulse width limited by TVJM
A
A
TVJ=45oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
130
140
110
120
IFSM
TVJ=150oC
TVJ=45oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
85
80
60
60
I2t
A2s
oC
TVJ=150oC
-40...+150
150
-40...+150
TVJ
TVJM
Tstg
Ptot
Md
TC=25oC
78
0.4...0.6
2
W
Nm
g
Mounting torque
Weight
SUR20100 thru SUR20120
Ultra Fast Recovery Epitaxial Diodes
Symbol
Test Conditions
Characteristic Values
Unit
typ.
max.
TVJ=25oC; VR=VRRM
750
250
7
uA
uA
mA
IR
o
.
TVJ=25 C; VR=0.8 VRRM
o
.
TVJ=125 C; VR=0.8 VRRM
IF=12A; TVJ=150oC
1.87
2.15
V
VF
TVJ=25oC
For power-loss calculations only
1.65
18.2
V
VTO
rT
m
TVJ=TVJM
RthJC
RthJA
1.6
60
K/W
IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC
_
VR=540V; IF=20A; -diF/dt=100A/us; L<0.05uH; TVJ=100 C
40
7
60
ns
A
trr
o
IRM
FEATURES
APPLICATIONS
ADVANTAGES
* International standard package
* Glass passivated chips
* Very short recovery time
* Extremely low losses at high
switching frequencies
* Antiparallel diode for high frequency
switching devices
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Anti saturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling
* Low IRM-values
* Soft recovery behaviour
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
SUR20100 thru SUR20120
Ultra Fast Recovery Epitaxial Diodes
70
A
6
C
5
50
A
TVJ=100°C
VR = 540V
T
VJ =100°C
VR = 540V
60
40
max.
IF=30A
IF=60A
IF=30A
IF=15A
50
40
30
20
10
0
IR M
IF=30A
IF=60A
IF=30A
IF=15A
4
3
2
1
0
IF
TVJ= 25°C
TVJ=100°C
TVJ=150°C
Qr
30
20
10
0
typ.
max.
typ.
V
1
10
-diF/dt
100
1000
0
200
-diF/dt
400
600
0
1
VF
2
3
4
A/ s
A/ s
Fig. 1 Forward current
versus voltage drop.
Fig. 2 R ecovery charge versus -diF /dt.
Fig. 3 P eak reverse current versus
-diF /dt.
1.4
1.2
1.0
60
1200
s
T
VJ =100°C
ns
V
0.9
VR =540V
1000
50
VFR
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
IF=30A
IR M
40
30
20
10
0
800
600
Kf
t
rr
max.
t
fr
IF=60A
IF=30A
IF=15A
VFR
0.8
0.6
QR
400
200
0.4
t
fr
typ.
0.2
0.0
TVJ=125°C
IF=30A
0
A/ s
A/ s
600
0
40
80
120
160
0
200
-diF/dt
400
600
0
200
400
°C
TVJ
-diF/dt
Fig. 4 Dynamic parameters versus
junction temperature.
Fig. 5 R ecovery time versus -diF/dt.
Fig. 6 P eak forward voltage
versus diF /dt.
Fig. 7 Transient thermal impedance junction to case.
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