SUR60120 [SIRECTIFIER]

快速恢复二极管Fast Recovery Diodes，软恢复特性超快恢复外延二极管Soft Recovery Behaviour Ultra Fast Recovery，Epitaxial Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。; 快速恢复二极管快恢复二极管，软恢复特性超快恢复外延二极管的软恢复行为超快恢复外延二极管， TJ = -40 ° C〜 125°C ， TJM = 125°C 。


型号：	SUR60120
厂家：	SIRECTIFIER SEMICONDUCTORS
描述：	快速恢复二极管Fast Recovery Diodes，软恢复特性超快恢复外延二极管Soft Recovery Behaviour Ultra Fast Recovery，Epitaxial Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。快速恢复二极管快恢复二极管，软恢复特性超快恢复外延二极管的软恢复行为超快恢复外延二极管， TJ = -40 ° C〜 125°C ， TJM = 125°C 。二极管快恢复二极管快速恢复二极管
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SUR6080 thru SUR60120

Ultra Fast Recovery Epitaxial Diodes

Dim.

Millimeter

Min. Max. Min.

Inches

Max.

Dimensions TO-247AC

19.81 20.32 0.780 0.800

20.80 21.46 0.819 0.845

C(TAB)

15.75 16.26 0.610 0.640

3.55 3.65 0.140 0.144

4.32 5.49 0.170 0.216

5.4

6.2 0.212 0.244

1.65 2.13 0.065 0.084

4.5

0.177

A=Anode, C=Cathode, TAB=Cathode

1.0

1.4 0.040 0.055

10.8 11.0 0.426 0.433

VRSM

VRRM

4.7

0.4

5.3 0.185 0.209

0.8 0.016 0.031

SUR6080

SUR60100

SUR60120

800

1000

1200

800

1000

1.5 2.49 0.087 0.102

1200

Symbol

Test Conditions

Maximum Ratings

Unit

TVJ=TVJM

100

800

IFRMS

IFAVM

IFRM

TC=60^oC; rectangular, d=0.5

tp<10us; rep. rating, pulse width limited by TVJM

TVJ=45^oC

t=10ms (50Hz), sine

t=8.3ms (60Hz), sine

t=10ms(50Hz), sine

t=8.3ms(60Hz), sine

500

540

450

480

IFSM

TVJ=150^oC

TVJ=45^oC

t=10ms (50Hz), sine

t=8.3ms (60Hz), sine

t=10ms(50Hz), sine

t=8.3ms(60Hz), sine

1250

1200

1000

950

I²t

A²s

^oC

TVJ=150^oC

-40...+150

150

-40...+150

TVJ

TVJM

Tstg

Ptot

TC=25^oC

189

0.8...1.2

Mounting torque

Weight

SUR6080 thru SUR60120

Ultra Fast Recovery Epitaxial Diodes

Symbol

Test Conditions

Characteristic Values

Unit

typ.

max.

TVJ=25^oC; VR=VRRM

0.5

TVJ=25 C; VR=0.8 VRRM

TVJ=125 C; VR=0.8 VRRM

IF=60A; TVJ=150^oC

1.8

2.3

TVJ=25^oC

For power-loss calculations only

1.43

6.1

VTO

TVJ=TVJM

RthJC

RthCK

RthJA

0.66

0.25

K/W

IF=1A; -di/dt=200A/us; VR=30V; TVJ=25^oC

VR=540V; IF=60A; -diF/dt=480A/us; L<0.05uH; TVJ=100 C

trr

IRM

FEATURES

APPLICATIONS

ADVANTAGES

* International standard package

JEDEC TO-247AC

* Antiparallel diode for high frequency

switching devices

* High reliability circuit operation

* Low voltage peaks for reduced

protection circuits

* Planar passivatd chips

* Very short recovery time

* Extremely low switching losses

* Low IRM-values

* Antisaturation diode

* Snubber diode

* Free wheeling diode in converters

and motor control circuits

* Rectifiers in switch mode power

supplies (SMPS)

* Low noise switching

* Low losses

* Operating at lower temperature or

space saving by reduced cooling

* Soft recovery behaviour

* Inductive heating and melting

* Uninterruptible power supplies (UPS)

* Ultrasonic cleaners and welders

SUR6080 thru SUR60120

Ultra Fast Recovery Epitaxial Diodes

Fig. 1 Forward current

versus voltage drop.

Fig. 2 R ecovery charge versus -di_F/dt.

Fig. 3 Peak reverse current versus

-di_F/dt.

Fig. 4 Dynamic parameters versus

junction temperature.

Fig. 5 R ecovery time versus -di_F/dt.

Fig. 6 Peak forward voltage

versus di_F/dt.

Fig. 7 Transient thermal impedance junction to case.