SGA-4163 [SIRENZA]

DC-5000 MHz, Cascadable SiGe HBT MMIC Amplifier; DC -5000兆赫,可级联的SiGe HBT MMIC放大器
SGA-4163
型号: SGA-4163
厂家: SIRENZA MICRODEVICES    SIRENZA MICRODEVICES
描述:

DC-5000 MHz, Cascadable SiGe HBT MMIC Amplifier
DC -5000兆赫,可级联的SiGe HBT MMIC放大器

放大器 射频 微波
文件: 总5页 (文件大小:258K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SGA-4163  
RoHS Compliant  
& Green Package  
Product Description  
The SGA-4163 is a high performance SiGe HBT MMIC Amplifier. A  
Darlington configuration featuring 1 micron emitters provides high  
Pb  
SGA-4163Z  
DC-5000 MHz, Cascadable  
SiGe HBT MMIC Amplifier  
F
and excellent thermal perfomance. The heterojunction in-  
T
creases breakdown voltage and minimizes leakage current be-  
tween junctions. Cancellation of emitter junction non-linearities  
results in higher suppression of intermodulation products. Only  
2 DC-blocking capacitors, a bias resistor and an optional RF choke  
are required for operation.  
The matte tin finish on Sirenza’s lead-free package utilizes a post  
annealing process to mitigate tin whisker formation and is RoHS  
compliant per EU Directive 2002/95. This package is also manu-  
factured with green molding compounds that contain no antimony  
trioxide nor halogenated fire retardants.  
Product Features  
• Now available in Lead Free, RoHS  
Compliant, & Green Packaging  
• Broadband Operation: DC-5000 MHz  
• Cascadable 50 Ohm  
Gain & Return Loss vs. Frequency  
VD= 3.2 V, ID= 45 mA (Typ.)  
16  
12  
8
0
• Operates From Single Supply  
• Low Thermal Resistance Package  
-10  
-20  
-30  
-40  
GAIN  
Applications  
ORL  
IRL  
• PA Driver Amplifier  
• Cellular, PCS, GSM, UMTS  
• IF Amplifier  
4
TL=+25ºC  
5
0
0
1
2
3
4
6
• Wireless Data, Satellite  
Frequency (GHz)  
Symbol  
Parameter  
Units  
Frequency  
Min.  
Typ.  
Max.  
850 MHz  
1950 MHz  
2400 MHz  
9.5  
10.5  
9.7  
9.6  
11.5  
G
Small Signal Gain  
dB  
850 MHz  
1950 MHz  
13.0  
12.1  
P1dB  
Output Power at 1dB Compression  
Output Third Order Intercept Point  
dBm  
dBm  
850 MHz  
1950 MHz  
29.7  
25.4  
OIP3  
Bandwidth  
IRL  
Determined by Return Loss (>10dB)  
Input Return Loss  
MHz  
dB  
dB  
dB  
V
5000  
28.0  
20.1  
5.0  
1950 MHz  
1950 MHz  
1950 MHz  
ORL  
NF  
Output Return Loss  
Noise Figure  
Device Operating Voltage  
2.9  
41  
3.2  
3.5  
49  
VD  
Device Operating Current  
mA  
45  
ID  
Thermal Resistance (junction to lead)  
°C/W  
255  
RTH, j-l  
VS = 8 V  
RBIAS = 110 Ohms  
ID = 45 mA Typ.  
TL = 25ºC  
OIP3 Tone Spacing = 1 MHz, Pout per tone = -5 dBm  
ZS = ZL = 50 Ohms  
Test Conditions:  
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this  
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or  
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights  
reserved.  
303 Technology Court, Broomfield, CO. 80021  
Phone: (800) SMI-MMIC  
1
http://www.sirenza.com  
EDS-100638 Rev. G  
SGA-4163 DC-5000 MHz Cascadable MMIC Amplifier  
Preliminary  
Typical RF Performance at Key Operating Frequencies  
Frequency (MHz)  
850  
Symbol  
G
Parameter  
Small Signal Gain  
Unit  
dB  
100  
500  
10.2  
30.2  
12.9  
26.7  
20.8  
16.0  
4.6  
1950  
2400  
9.6  
3500  
10.3  
10.5  
29.7  
13.0  
23.7  
24.3  
16.3  
4.8  
9.7  
9.4  
OIP3  
P1dB  
IRL  
Output Third Order Intercept Point  
Output Power at 1dB Compression  
Input Return Loss  
dBm  
dBm  
dB  
25.4  
12.1  
28.0  
20.1  
17.2  
5.0  
23.0  
11.1  
36.7  
18.7  
17.6  
5.3  
29.1  
19.7  
15.5  
16.6  
17.6  
18.4  
ORL  
S12  
Output Return Loss  
dB  
Reverse Isolation  
dB  
NF  
Noise Figure  
dB  
V = 8 V  
S
I = 45 mA Typ.  
D
T = 25ºC  
L
OIP Tone Spacing = 1 MHz, Pout per tone = -5 dBm  
3
Z = Z = 50 Ohms  
SL
Test Conditions:  
R
= 110 Ohms  
BIAS
Absolute Maximum Ratings  
Noise Figure vs. Frequency  
VD= 3.2 V, ID= 45 mA (Typ.)  
Parameter  
Absolute Limit  
Max. Device Current (ID)  
Max. Device Voltage (VD)  
Max. RF Input Power  
90 mA  
7
6
5
4
3
5 V  
+18 dBm  
+150°C  
Max. Junction Temp. (TJ)  
Operating Temp. Range (TL)  
-40°C to +85°C  
+150°C  
Max. Storage Temp  
.
Operation of this device beyond any one of these limits may  
cause permanent damage. For reliable continous operation,  
the device voltage and current must not exceed the maximum  
operating values specified in the table on page one.  
TL=+25ºC  
2
0
0.5  
1
1.5  
2
2.5  
3
Bias conditions should also satisfy the following expression:  
IDVD < (TJ - TL) / RTH, j-l  
Frequency (GHz)  
OIP3 vs. Frequency  
P1dB vs. Frequency  
VD=3.2 V, ID= 45 mA (Typ.)  
VD= 3.2 V, ID= 45 mA (Typ.)  
35  
30  
25  
20  
18  
15  
12  
9
TL=+25ºC  
2.5  
TL=+25ºC  
2.5  
15  
0
6
0
0.5  
1
1.5  
2
3
0.5  
1
1.5  
2
3
Frequency (GHz)  
Frequency (GHz)  
303 Technology Court, Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
2
http://www.sirenza.com  
EDS-100638 Rev. G  
SGA-4163 DC-5000 MHz Cascadable MMIC Amplifier  
Preliminary  
Typical RF Performance Over Temperature ( Bias: VD= 3.2 V, ID= 45 mA (Typ.) )  
|S21| vs. Frequency  
|S11| vs. Frequency  
16  
12  
8
0
-10  
-20  
-30  
-40  
4
+25°C  
-40°C  
+85°C  
+25°C  
-40°C  
+85°C  
TL  
TL  
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Frequency (GHz)  
Frequency (GHz)  
|S12| vs. Frequency  
|S22| vs. Frequency  
0
-10  
-20  
-30  
-40  
-10  
-15  
-20  
-25  
-30  
+25°C  
-40°C  
+85°C  
+25°C  
-40°C  
+85°C  
TL  
TL  
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Frequency (GHz)  
Frequency (GHz)  
NOTE: Full S-parameter data available at www.sirenza.com  
303 Technology Court, Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
3
http://www.sirenza.com  
EDS-100638 Rev. G  
SGA-4163 DC-5000 MHz Cascadable MMIC Amplifier  
Preliminary  
BasicApplication Circuit  
Application Circuit Element Values  
RBIAS  
Frequency (Mhz)  
Reference  
VS  
Designator  
500  
850  
1950  
2400  
3500  
1000  
pF  
CD  
1 uF  
CB  
CD  
LC  
220 pF 100 pF  
68 pF  
22 pF  
22 nH  
56 pF  
22 pF  
18 nH  
39 pF  
15 pF  
15 nH  
100 pF  
68 nH  
68 pF  
33 nH  
LC  
1,2  
3 SGA-4163  
6
Recommended Bias Resistor Values for ID=45mA  
RF in  
RF out  
R
Supply Voltage(VS)  
RBIAS  
BIAS=( VS-VD ) / ID  
CB  
4,5  
CB  
6 V  
62  
8 V  
110  
10 V  
150  
12 V  
200  
VS  
Note: RBIAS provides DC bias stability over temperature.  
1 uF  
RBIAS  
1000 pF  
CD  
Mounting Instructions  
LC  
1. Use a large ground pad area near device pins 1, 2,  
4, and 5 with many plated through-holes as shown.  
CB  
CB  
3. We recommend 1 or 2 ounce copper. Measurements  
for this data sheet were made on a 31 mil thick FR-4  
board with 1 ounce copper on both sides.  
Pin #  
3
Function  
Description  
RF input pin. This pin requires the use  
RF IN of an external DC blocking capacitor  
chosen for the frequency of operation.  
Part Identification Marking  
6 5 4  
6 5 4  
Connection to ground. For optimum RF  
performance, use via holes as close to  
ground leads as possible to reduce lead  
1, 2, 4, 5  
GND  
A41  
A41Z  
inductance  
.
RF output and bias pin. DC voltage is  
RF OUT/ present on this pin, therefore a DC  
1 2 3  
1 2 3  
6
BIAS  
blocking capacitor is necessary for  
proper operation.  
Caution: ESD sensitive  
Appropriate precautions in handling, packaging  
and testing devices must be observed.  
Part Number Ordering Information  
Part Number  
Reel Size  
7"  
Devices/Reel  
SGA-4163  
3000  
3000  
SGA-4163Z  
7"  
303 Technology Court, Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
http://www.sirenza.com  
EDS-100638 Rev. G  
4
SGA-4163 DC-5000 MHz Cascadable MMIC Amplifier  
SOT-363 PCB Pad Layout  
Preliminary  
Dimensions in inches [millimeters]  
RF  
OUT  
RF  
I N  
Notes:  
1. Provide a large ground pad area under device  
pins 1, 2, 4, & 5 with many plated via holes as  
shown.  
2. Dimensions given for 50 Ohm RF I/O lines are for  
31 mil thick Getek. Scale accordingly for different  
board thicknesses and dielectric contants.  
3. We recommend 1 or 2 ounce copper. Measure-  
ments for this data sheet were made on a 31 mil  
thick Getek with 1 ounce copper on both sides.  
SOT-363 Nominal Package Dimensions  
Dimensions in inches [millimeters]  
Alink to the SOT-363 package outline drawing with full dimensions and  
tolerances may be found on the product web page at www.sirenza.com.  
303 Technology Court, Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
5
http://www.sirenza.com  
EDS-100638 Rev. G  

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