SPA-1118Z [SIRENZA]
850 MHz 1 Watt Power Amplifier with Active Bias; 850兆赫1瓦功率放大器的有源偏置
| 型号： | SPA-1118Z |
| 厂家： | 
SIRENZA MICRODEVICES |
| 描述： | 850 MHz 1 Watt Power Amplifier with Active Bias |
| 文件： | 总5页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPA-1118
Product Description
RoHS Compliant
& Green Package
Pb
Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs
Heterojunction Bipolar Transistor (HBT) amplifier housed in
a low-cost surface-mountable plastic package. These HBT
amplifiers are fabricated using molecular beam epitaxial
growth technology which produces reliable and consistent
performance from wafer to wafer and lot to lot.
SPA-1118Z
850 MHz 1 Watt Power Amplifier
with Active Bias
This product is specifically designed for use as a driver
amplifier for infrastructure equipment in the 850 MHz band.
Its high linearity makes it an ideal choice for wireless data and
digital applications.
The matte tin finish on Sirenza’s lead-free package utilizes a
post annealing process to mitigate tin whisker formation and
is RoHS compliant per EU Directive 2002/95. This package
is also manufactured with green molding compounds that
contain no antimony trioxide nor halogenated fire retardants.
Product Features
• Now available in Lead Free, RoHS
Compliant, & Green Packaging
• High Linearity Performance:
+21 dBm IS-95 Channel Power at -55 dBc ACP
+48 dBm OIP3 Typ.
• On-chip Active Bias Control
• Patented High Reliability GaAs HBT Technology
• Surface-Mountable Plastic Package
VCC
N/C
N/C
Active Bias
VBIAS
RFOUT/
VCC
RFIN
N/C
Applications
• Multi-Carrier Applications
• AMPS, ISM Applications
Input
Match
N/C
Parameters: Test Conditions:
Z0 = 50 Ohms, VCC = 5V, Temp = 25ºC
Symbol
Units
Min.
Typ.
Max.
f0
Frequency of Operation
MHz
dBm
810
960
Output Power at 1dB Compression
29.5
P1dB
Adjacent Channel Power
IS-95 @ 880 MHz, ±885 KHz, POUT = 21 dBm
ACP
dBc
-57.0
-54.0
18.2
Small Signal Gain, 880 MHz
Input VSWR
dB
-
16.2
17.2
S21
VSWR
1.5:1
Output Third Order Intercept Point
Power out per tone = +14 dBm
OIP3
dBm
48.0
NF
ICC
Noise Figure
dB
mA
V
7.5
310
5.0
35
Device Current
275
330
VCC
Device Voltage
4.75
5.25
Rth,
Thermal Resistance (junction - lead) , TL=85ºC
ºC/W
j-l
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights
reserved.
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101427 Rev I
SPA-1118 850 MHz 1 Watt Power Amp.
850-950 MHz Application Circuit Data, ICC=320 mA, VCC=5V
IS-95 @ 880 MHz
Adj. Channel Pwr. vs. Channel Output Pwr.
Gain vs. Frequency
-45
22
20
18
16
14
12
10
-50
-55
-60
-65
-70
-75
-40C
85C
25C
25C
85C
-40C
17
18
19
20
21
22
23
24
0.85
0.87
0.89
0.91
0.93
0.95
dBm
GHz
Input/Output Return Loss,
Isolation vs. Frequency, T=25°C
P1dB vs. Frequency
32
30
28
26
24
22
20
0
-5
-10
-15
-20
-25
-30
-35
-40
S11
S12
S22
25C
85C
-40C
0.85
0.87
0.89
0.91
0.93
0.95
0.85
0.87
0.89
0.91
0.93
0.95
GHz
GHz
Device Current vs. Source Voltage
450
25C
-40C
85C
400
350
300
250
200
150
100
50
0
0
1
2
3
4
5
Vcc (V)
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-101427 Rev I
SPA-1118 850 MHz 1 Watt Power Amp.
850 - 950 MHz Schematic
VCC
10uF,
Tantalum
1000pF
43pF
360Ω
1
2
3
4
8
7
6
5
100 nH
22pF
22pF
Z=50Ω, 17°
5.6 pF
850 - 950 MHz Evaluation Board Layout
Vcc
C2
C3
C4
R1
L1
C1
C6
C5
Sirenza Microdevices
ECB-101161 Rev. C
SOIC-8 PA
Eval Board
Note: Pins 4, 5, 7, 8 are not
connected internally
Vpc
Ref. Des.
Value
Part Number
C1, C6
C2
22pF, 5%
Rohm MCH18 series
AVX TAJB106K020R
Rohm MCH18 series
Rohm MCH18 series
Rohm MCH18 series
Coilcraft 1008HQ series
Rohm MCR03 series
10uF, 10%
1000pF, 5%
43pF, 5%
C3
C4
C5
5.6pF, ±0.5pF
100nH, 5%
360 Ohm, 5%
L1
R1
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-101427 Rev I
SPA-1118 850 MHz 1 Watt Power Amp.
Pin # Function
Description
Device Schematic
1
Vcc
VCC is the supply voltage for the active bias network.
Bypassing in the appropriate location as shown on
application schematic is required for optimum RF
performance.
2
Vbias
Vbias is the bias control pin for the active bias network.
Device current is set by the current into this pin.
Recommended configuration is shown in the Application
Schematic. Bypassing in the appropriate location as
shown on application schematic is required for optimum
RF performance.
1
4,5,7,8 N/C
ACTIVE BIAS
NETWORK
2
6
3
RF In
N/C
RF input pin. This pin requires the use of an external
DC blocking capacitor chosen for the frequency of
operation.
4, 5
6
No connection
3
RF Out/Vcc RF output and bias pin. Bias should be supplied to this
pin through an external RF choke. Because DC biasing
is present on this pin, a DC blocking capacitor should
be used in most applications (see application
schematic). The supply side of the bias network should
be well bypassed. An output matching network is
necessary for optimum performance.
7, 8
N/C
Gnd
No connection
EPAD
Exposed area on the bottom side of the package needs
to be soldered to the ground plane of the board for
thermal and RF performance. Several vias should be
located under the EPAD as shown in the recommended
land pattern (page 5).
Absolute Maximum Ratings
Parameter (Ta = 25ºC)
Absolute
Limit
Max. Supply Current (ICC) at VCC typ.
Max. Device Voltage (VCC) at ICC typ.
Max. RF Input Power
750 mA
6.0 V
Caution: ESD sensitive
Appropriate precautions in handling,
packaging and testing devices must be
24 dBm
+160 ºC
+150 ºC
The Moisture Sensitivity Level rating for this device
is level 1 (MSL-1) based on the JEDEC 22-A113
standard classification. No special moisture
packaging/handling is required during storage,
Max. Junction Temp. (TJ)
Max. Storage Temp.
Operation of this device beyond any one of these limits may cause
permanent damage. For reliable continuous operation, the device
voltage and current must not exceed the maximum operating values
specified in the table on page one.
shipment, or installation of the devices.
Bias Conditions should also satisfy the following expression:
ICCVCC (max) < (TJ - TL)/Rth,j-l
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101427 Rev I
4
SPA-1118 850 MHz 1 Watt Power Amp.
Package Outline Drawing
(See SMDI MPO-101644 for tolerances, available on our website)
8
7
6
5
.194 [4.93]
EXPOSED PAD
.236 [5.994]
.155 [3.937]
1
2
3
4
Beveled Edge
.045 [1.143]
.035 [.889]
TOP VIEW
BOTTOM VIEW
.013 [.33] x 45°
.050 [1.27]
.016 [.406]
.061 [1.549]
.058 [1.473]
.008 [.203]
.194 [4.928]
.155 [3.937]
END VIEW
SEATING PLANE
.003 [.076]
SEE DETAIL A
SIDE VIEW
Recommended Land Pattern
PARTING LINE
0.150 [3.81]
Plated-Thru Holes
(0.015" Dia, 0.030" Pitch)
0.140 [3.56]
0.300 [7.62]
.025
Machine
Screws
5°
DETAIL A
0.080 [2.03]
0.050 [1.27]
0.020 [0.51]
Note: DIMENSIONSARE IN INCHES [MM]
Part Identification Marking
Part Number Ordering Information
Part Number
SPA-1118
SPA-1118Z
Reel Size
7"
Devices/Reel
500
Lot ID
Lot ID
SPA-1118Z
SPA-1118
7"
500
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
5
http://www.sirenza.com
EDS-101427 Rev I
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