SPA-1218 [SIRENZA]

1960 MHz 1 Watt Power Amplifier with Active Bias; 1960兆赫1瓦功率放大器的有源偏置
SPA-1218
型号: SPA-1218
厂家: SIRENZA MICRODEVICES    SIRENZA MICRODEVICES
描述:

1960 MHz 1 Watt Power Amplifier with Active Bias
1960兆赫1瓦功率放大器的有源偏置

放大器 射频 微波 功率放大器
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中文:  中文翻译
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Product Description  
SPA-1218  
1960 MHz 1 Watt Power Amplifier  
with Active Bias  
Sirenza Microdevices’ SPA-1218 is a high efficiency GaAs  
Heterojunction Bipolar Transistor (HBT) amplifier housed in  
a low-cost surface-mountable plastic package. These HBT  
amplifiers are fabricated using molecular beam epitaxial  
growth technology which produces reliable and consistent  
performance from wafer to wafer and lot to lot.  
This product is specifically designed for use as a driver  
amplifier for infrastructure equipment in the 1960 MHz PCS  
band. Its high linearity makes it an ideal choice for multi-carrier  
and digital applications.  
Product Features  
High Linearity Performance:  
+21.3 dBm IS-95 Channel Power at -55 dBc ACP  
+48 dBm OIP3 Typ.  
Active  
Bias  
VCC  
On-chip Active Bias Control  
Patented High Reliability GaAs HBT Technology  
Surface-Mountable Plastic Package  
VBIAS  
RFOUT/  
VCC  
RFIN  
Input  
Match  
Applications  
PCS Systems  
N/C  
Multi-Carrier Applications  
Parameters: Test Conditions:  
Symbol  
Units  
Min.  
Typ.  
Max.  
Z0 = 50 Ohms, VCC=5V, Temp = 25ºC  
f0  
Frequency of Operation  
MHz  
dBm  
1930  
1990  
Output Power at 1dB Compression [1,2]  
29.0  
P1dB  
[1]  
Adjacent Channel Power  
ACP  
dBc  
-55.0  
-52.0  
13.5  
IS-95 @1960MHz, ±885 KHz, POUT = 21.3 dBm  
Small Signal Gain [1,2]  
dB  
-
11.5  
12.5  
S21  
S11  
Input VSWR [1,2]  
1.5:1  
[2]  
Output Third Order Intercept Point  
OIP3  
dBm  
48.0  
Power out per tone = +14 dBm  
NF  
ICC  
Noise Figure [1,2]  
dB  
mA  
V
7.0  
310  
5.0  
35  
Device Current [1,2]  
275  
330  
VCC  
Device Voltage[1,2]  
4.75  
5.25  
Rth, j-l  
Thermal Resistance (junction - lead) , TL=85ºC  
ºC/W  
[1] OptimalACP tune  
[2] Optimal IP3 tune  
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.  
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are  
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not  
authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.  
Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.  
Phone: (800) SMI-MMIC  
1
http://www.sirenza.com  
EDS-101428 Rev G  
303 S. Technology Ct., Broomfield, CO 80021  
SPA-1218 1960 MHz 1 Watt Power Amp.  
1960 MHz Application Circuit Data, ICC=320 mA, T=+25C, VCC=5V  
Note: Tuned for ACP  
IS-95 @ 1.96 GHz  
Adj. Channel Pwr. vs. Channel Output Pwr.  
Gain vs. Frequency  
14  
13  
12  
11  
10  
9
-45  
-50  
-55  
-60  
-65  
-70  
-75  
25C  
85C  
-40C  
-40C  
85C  
25C  
8
1.93  
1.94  
1.95  
.96  
1.97  
1.98  
1.99  
14  
16  
18  
20  
22  
24  
dBm  
GHz  
nput/Output Return Loss,  
Isolation vs. Frequency, T=25°C  
P1dB vs. Frequency  
0
32  
30  
28  
26  
24  
22  
20  
-10  
15  
-20  
-25  
-30  
-35  
-40  
S11  
S12  
S22  
25C  
85C  
-4
1.93  
1.94  
1.95  
1.96  
1.97  
1.98  
1.99  
1.93  
1.94  
1.95  
1.96  
1.97  
198  
1.99  
GHz  
GHz  
Device Current vs. Source Voltage  
450  
25C  
-40C  
85C  
400  
350  
300  
250  
200  
150  
100  
50  
0
0
1
2
3
4
5
Vcc (V)  
303 S. Technology Ct., Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
2
http://www.sirenza.com  
EDS-101428 Rev G  
SPA-1218 1960 MHz 1 Watt Power Amp.  
ACP Tune  
1930-1990 MHz Schematic  
Vcc  
10pF  
1000pF  
10uF  
10pF  
360  
1
2
3
4
8
7
6
5
22 nH  
Z=50, 16.6°  
22pF  
22pF  
2.2pF  
1930-1990 MHz Evaluation Board Layout  
Ref. Des.  
Value  
22pF, 5%  
Part Number  
Vcc  
C1, C7  
C2  
Rohm MCH18 series  
Rohm MCH18 series  
AVX TAJB106K020R  
Rohm MCH18 series  
Rohm MCH18 series  
Rohm MCH18 series  
Toko LL1608-FS series  
Rohm MCR03 series  
C3  
10pF, 5%  
C3  
10uF, 10%  
1000pF, 5%  
10pF, 5%  
C4  
C5  
C4  
C5  
C2  
C6  
2.2pF, ±0.25pF  
22nH, 5%  
C7  
L1  
L1  
R1  
R1  
360 Ohm, 5%  
C1  
C6  
Sirenza Microdevices  
ECB-101161 Rev. C  
SOIC-8 PA  
Eval Board  
Vpc  
303 S. Technology Ct., Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
3
http://www.sirenza.com  
EDS-101428 Rev G  
SPA-1218 1960 MHz 1 Watt Power Amp.  
Pin #  
1
Function  
Description  
Device Schematic  
Vcc  
VCC is the supply voltage for the active bias network.  
Bypassing in the appropriate location as shown on  
application schematic is required for optimum RF  
performance.  
1
2
Vbias  
Vbias is the bias control pin for the active bias network.  
Device current is set by the current into this pin.  
Recommended configuration is shown in the Application  
Schematic. Bypassing in the appropriate location as  
shown on application schematic is required for optimum  
RF performance.  
ACTIVE BIAS  
NETWORK  
2
5-8  
3
4
RF In  
N/C  
RF input pin. This pin requires the use of an external  
DC blocking capacitor chosen for the frequency of  
operation.  
3
No connection  
5, 6, 7, 8 RF Out/Vcc RF output and bias pin. Bias should be supplied to this  
pin through an external RF choke. Because DC biasing  
is present on this pin, a DC blocking capacitor should  
be used in most applications (see application  
schematic). The supply side of the bias network should  
be well bypassed. An output matching network is  
necessary for optimum performance.  
EPAD  
Gnd  
Exposed area on the bottom side of the package needs  
to be soldered to the ground plane of the board for  
thermal and RF performance. Several vias should be  
located under the EPAD as shown in the recommended  
land pattern (page 7).  
Absolute Maximum Ratings  
Parameter (Ta = 25ºC)  
Absolute  
Limit  
750 mA  
6.0 V  
Caution: ESD sensitive  
Appropriate precautions in handling, packag-  
ing and testing devices must be observed.  
Max. Supply Current (ICC) at VCC typ.  
Max. Device Voltage (VCC) at ICC typ.  
Max. RF Input Power  
The Moisture Sensitivity Level rating for this device is level 1  
(MSL-1) based on the JEDEC 22-A113 standard classifica-  
tion. No special moisture packaging/handling is required  
29 dBm  
+160 ºC  
+150 ºC  
Max. Junction Temp. (TJ)  
during storage, shipment, or installation of the devices.  
Max. Storage Temp.  
Operation of this device beyond any one of these limits may cause  
permanent damage. For reliable continuous operation, the device  
voltage and current must not exceed the maximum operating values  
specified in the table on page one.  
Bias Conditions should also satisfy the following expression:  
ICCVCC (max) < (TJ - TL)/Rth,j-l  
303 S. Technology Ct., Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
http://www.sirenza.com  
EDS-101428 Rev G  
4
SPA-1218 1960 MHz 1 Watt Power Amp.  
Part Number Ordering Information  
Part Number  
Devices Per Reel  
Reel Size  
SPA-1218  
500  
7"  
Package Outline Drawing  
(See SMDI MPO-101644 for tolerances, available on our website)  
8
7
6
5
.194 [4.93]  
EXPOSED PAD  
Lot ID  
SPA  
.236 [5.994]  
.155 [3.937]  
1218  
1
2
3
4
Beveled Edge  
.045 [1.143]  
.035 [.889]  
TOP VIEW  
BOTTOM VIEW  
.013 [.33] x 45°  
.050 [1.27]  
.016 [.406]  
.061 [1.549]  
.058 [1.473]  
.008 [.203]  
.194 [4.928]  
.155 [3.937]  
END VIEW  
SEATING PLANE  
.003 [.076]  
SEE DETAIL A  
SIDE VIEW  
Recommended Land Pattern  
PARTING LINE  
0.150 [3.81]  
Plated-Thru Holes  
(0.015" Dia, 0.030" Pitch)  
0.140 [3.56]  
0.300 [7.62]  
.025  
Machine  
Screws  
5°  
DETAIL A  
0.080 [2.03]  
0.050 [1.27]  
Note: DIMENSIONSARE IN INCHES [MM]  
0.020 [0.51]  
303 S. Technology Ct., Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
http://www.sirenza.com  
EDS-101428 Rev G  
5

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