SUF-2000 [SIRENZA]

0.2-10 GHz, Cascadable pHEMT MMIC Amplifier; 0.2-10千兆赫,可级联的pHEMT MMIC放大器
SUF-2000
型号: SUF-2000
厂家: SIRENZA MICRODEVICES    SIRENZA MICRODEVICES
描述:

0.2-10 GHz, Cascadable pHEMT MMIC Amplifier
0.2-10千兆赫,可级联的pHEMT MMIC放大器

放大器
文件: 总4页 (文件大小:152K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Preliminary  
SUF-2000  
0.2-10 GHz, Cascadable pHEMT  
MMICAmplifier  
Product Description  
Sirenza Microdevices’ SUF-2000 is a monolithically matched broadband  
high IP3 gain block covering 0.05-10 GHz. This pHEMT FET-based  
amplifier uses a patented self-bias Darlington topology featuring a gain  
and temperature compensating active bias network that operates from  
a single 5V supply. It offers efficient, cascadable performance in a  
compact 0.88 x 0.86 mm2 die. It is well-suited for RF, LO, and IF driver  
applications.  
Product Features  
Broadband Performance  
Gain & Return Loss vs. Frequency  
(GSG Probe Data)  
High Gain = 12.0 dB @ 6 GHz  
P1dB = 16 dBm @ 6 GHz  
Low-noise, Efficient Gain Block  
• 3.3V Operation, No Dropping Resistor  
Low Gain Variation vs. Temperature  
Patented Thermal Design  
20  
18  
16  
14  
12  
10  
8
0
-6  
ORL  
-12  
-18  
-24  
-30  
Patented Self-Bias Darlington Circuit  
GAIN  
\
Applications  
Broadband Communications  
IRL  
6
4
Test Instrumentation  
Military & Space  
LO and IF Mixer Applications  
High IP3 RF Driver Applications  
2
0
0
4
8
12  
16  
20  
Frequency (Ghz)  
Symbol  
Parameters  
Small Signal Power Gain  
Units  
Frequency  
Min.  
Typ.  
Max.  
2 GHz  
6 GHz  
10 GHz  
2 GHz  
6 GHz  
10 GHz  
2 GHz  
6 GHz  
10 GHz  
2 GHz  
6 GHz  
10 GHz  
2 GHz  
6 GHz  
10 GHz  
2 GHz  
6 GHz  
10 GHz  
2 GHz  
6 GHz  
10 GHz  
12.0  
11.5  
11.0  
16.0  
16.0  
15.5  
33.0  
30.0  
27.0  
3.6  
Gp  
dB  
P1dB  
OIP3  
NF  
Output Power at 1dB Compression  
Output Third Order Intercept Point  
Noise Figure  
dBm  
dBm  
dB  
3.6  
4.6  
-16.0  
-24.0  
-22.0  
-10.0  
-11.0  
-15.0  
IRL  
Input Return Loss  
dB  
ORL  
Isol  
Output Return Loss  
dB  
-18.0  
-17.0  
-16.0  
3.3  
71  
-0.01  
256  
Reverse Isolation  
dB  
VD  
ID  
Device Operating Voltage  
Device Operating Current  
V
mA  
Device Gain Temperature Coefficient  
Thermal Resistance (junction-to-backside)  
dB/°C  
°C/W  
ΔG/ΔT  
Rth, j-l  
V= 5 V  
I = 80 mA Typ.  
OIPTone Spacing = 1 MHz, Pout per tone = 0 dBm  
Test Conditions:  
Test Conditions: VS = 3.3V, ID = 71mA OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm  
ZS = ZL = 50 Ohms. GSG Probe Data With Bias Tees  
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this  
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or  
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights  
reserved.  
303 S. Technology Ct.  
Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
1
http://www.sirenza.com  
EDS-105416 Rev A  
Preliminary  
SUF-2000 0.2-10 GHz Cascadable MMIC Amplifier  
Typical Performance (GSG Probe Data)  
S21 vs. Frequency  
P1dB vs. Frequency  
14  
12  
10  
8
20  
19  
18  
17  
16  
15  
14  
6
0C  
25C  
0C  
85C  
25C  
85C  
13  
12  
11  
4
2
10  
0
0
2
4
6
8
10  
12  
14  
16  
18  
0
4
8
12  
16  
20  
Frequency (GHz)  
Frequency (GHz)  
S11 vs. Frequency  
S22 vs. Frequency  
0
-5  
0
-5  
0C  
25C  
85C  
-10  
-15  
-20  
-25  
-30  
-10  
-15  
-20  
-25  
-30  
0C  
25C  
85C  
0
4
8
12  
16  
20  
0
4
8
12  
16  
20  
Frequency (GHz)  
Frequency (GHz)  
OIP3 vs. Frequency  
Noise Figure vs. Frequency  
40  
38  
36  
34  
32  
30  
28  
26  
24  
22  
20  
7
6
5
4
3
2
1
0
25C  
0C  
85C  
25C  
-20C  
85C  
0
2
4
6
8
10  
12  
14  
16  
18  
0
2
4
6
8
10  
12  
14  
16  
18  
Frequency (GHz)  
Frequency (GHz)  
303 S. Technology Ct.  
Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
2
http://www.sirenza.com  
EDS-105416 Rev A  
Preliminary  
SUF-2000 0.2-10 GHz Cascadable MMIC Amplifier  
Typical Performance (GSG Probe Data)  
Freq  
(GHz)  
0.2  
0.5  
0.85  
2
VD  
(V)  
3.3  
3.3  
3.3  
3.3  
3.3  
3.3  
3.3  
3.3  
Current  
(mA)  
71  
Gain  
(dB)  
12.5  
12.5  
12.5  
12.0  
12.0  
11.5  
11.0  
8.0  
P1dB  
OIP3  
S11  
(dB)  
S22  
(dB)  
NF  
(dBm)  
(dBm)  
(dB)  
-14.0  
-14.0  
-15.0  
-16.0  
-18.0  
-24.0  
-22.0  
-16.0  
-10.0  
-10.0  
-10.0  
-10.0  
-10.5  
-11.0  
-15.0  
-17.0  
71  
71  
16.5  
16.0  
16.5  
16.0  
15.5  
13.0  
31.0  
33.0  
32.0  
30.0  
27.0  
25.0  
3.7  
3.6  
3.8  
3.6  
4.6  
5.4  
71  
4
71  
6
71  
10  
71  
16  
71  
Test Conditions:  
Test Conditions: GSG Probe Data With Bias Tees, OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm, 25°C  
Parameter  
Absolute Limit  
Max Device Current (ID)  
80mA  
3.6V  
Max Device Voltage (VD)  
Max RF Input Power  
Max Dissipated Power  
Max Junction Temperature (TJ)  
Operating Temperature Range (TL)  
10dBm  
288mW  
150C  
-40 to +85C  
-65 to 150C  
Max Storage Temp.  
Operation of this device beyond any one of these limits may cause  
permanent damage. For reliable continuous operation, the device  
voltage and current must not exceed the maximum operating values  
specified in the table on page one.  
Bias Conditions should also satisfy the following expression:  
IDVD < (TJ - TL) / RTH, j-l  
TL=Backside of die  
Current Variation vs. Temperature  
ELECTROSTATIC SENSITIVE DEVICE  
Appropriate precautions in handling, packaging  
and testing devices must be observed.  
Current vs. Voltage  
85  
80  
75  
70  
65  
60  
55  
0C  
25C  
85C  
3.1  
3.15  
3.2  
3.25  
3.3  
VD  
3.35  
3.4  
3.45  
3.5  
303 S. Technology Ct.  
Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
3
http://www.sirenza.com  
EDS-105416 Rev A  
Preliminary  
SUF-2000 0.2-10 GHz Cascadable MMIC Amplifier  
Pad Description  
1
2
Notes:  
Pad #  
1
Function  
Description  
1. All Dimensions in Inches [Millimeters].  
2. No connection required for unlabeled bond pads.  
3. Die Thickness is 0.004 (0.100).  
4. Typical bond pad is 0.004 (0.100) square.  
5. Backside metalization: Gold.  
6. Backside is Ground.  
This pad is DC coupled and matched to 50 Ohms.  
An external DC block is required.  
This pad is DC coupled and matched to 50 Ohms.  
Bias is applied through this pad.  
RFIN  
RFOUT / Bias  
GND  
2
7. Bond pad metalization: Gold.  
Die  
Bottom  
Die bottom must be connected to RF/DC ground  
using silver-filled conductive epoxy.  
Device Assembly  
+3.3V  
Interconnect  
Wire or Ribbon  
Bypass Cap(s)  
Choke  
50Ω Line  
DC Block  
DC Block  
50Ω Line  
3-5 mil gap  
303 S. Technology Ct.  
Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
4
http://www.sirenza.com  
EDS-105416 Rev A  

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