SC00080710 [SKYWORKS]
CAPACITOR, FILM/FOIL, SILICON DIOXIDE AND NITRIDE, 0.0000008uF, SURFACE MOUNT, 0101, CHIP;
| 型号： | SC00080710 |
| 厂家： | 
SKYWORKS SOLUTIONS INC. |
| 描述： | CAPACITOR, FILM/FOIL, SILICON DIOXIDE AND NITRIDE, 0.0000008uF, SURFACE MOUNT, 0101, CHIP |
| 文件： | 总2页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MIS Chip Capacitors
SC Series
Features
■ Readily Available From Stock
■ High Reliability Silicon Oxide–Nitride
Dielectric
■ Low Loss — Typically 0.04 dB in a 50 Ω
System
■ Operation through 26 GHz
■ Wide Temperature Operation
Absolute Maximum Ratings
Characteristic
Value
Operating Temp Range (TOP
Storage Temp Range (TSTG
)
-65 to +200°C
-65 to +200°C
100 V
)
Description
Dielectric Withstanding Voltage
Alpha’s MIS Chip Capacitors are available in a wide range
of sizes and capacitance values.They are frequently used
in applications requiring DC blocking, and RF bypassing,
or as a fixed capacitance tuning element in filters,
oscillators, and matching networks. The devices have a
dielectric composed of thermally grown silicon dioxide over
which a layer of silicon nitride is deposited.This dielectric
possesses a low temperature coefficient of capacitance,
very high insulation resistance. The devices also exhibit
excellent long term stability making them suitable for high
reliability applications. The capacitors have a high
dielectric breakdown which permits the use of thin
dielectrics resulting in larger capacitance per unit area than
our previous catalog offerings.The temperature coefficient
is less that 50 ppm/°C, and operation is suitable from
-65°C to 200°C. Compared to ceramic capacitors,
Skyworks’MIS chip capacitors offer higher Q, and a lower
insertion loss of 0.04 dB, in a 50 Ω system. Insulation
Electrical Specifications
1:
Capacitance Range 0.8 to 1000 pF
Temperature Coefficient: 50 ppm/°C Typical
2:
Capacitance Tolerance
20%
Operating Temperature: -65°C to 200°C
Dielectric Withstanding Voltage: 100 V
5
Insulation Resistance: 10 Megohms Typical
Leakage Current: Typ. < 1 nA
Typical SPDT Switch
BIAS
BIAS
OUTPUT
5
resistance is greater than 10 M Ω.To accommodate high
C2
C3
volume automated assembly methods, wafers can be
supplied on expanded film frame. To reduce cost, chips
can be supplied with only sample testing packaged in vials.
Packaging in waffle packs with 100% electrical test and
visual inspection is always available if required.
INPUT 1
INPUT 2
C1
D1
D2
C4
C2, C3 — Chip MIS Capacitor
C1, C4 — Chip or Beam — Lead MIS Capacitor
D1, D2 DSG6474 Beam — Lead PIN Diode
Skyworks Solutions, Inc. [978] 241-7000 • Fax [978] 241-7906 • Email sales@skyworksinc.com • www.skyworksinc.com
1
Specifications subject to change without notice. 10/02A
MIS Chip Capacitors
SC Series
Electrical Specifications
Example
Part Number Structure — SCXXXXYYZZ
where:
Capacitance
Chip Dimensions
(+ 1 mil)
Part Number
SC00080710
SC00080912
SC00120710
SC00120912
SC00180710
SC00180912
SC00260710
SC00260912
SC00380710
♦ SC00380912
SC00560710
♦ SC00560912
SC00680710
SC00680912
SC00820710
♦ SC00820912
SC00821518
SC01000710
♦ SC01000912
SC01001518
SC01500710
SC01500912
SC01501518
♦ SC02200912
SC02201518
SC03301518
SC04701518
♦ SC06801518
SC10002430
♦ SC10003440
SC22203440
♦ SC33303440
SC50004450
♦ SC99906068
(+ 20%)
0.8
0.8
1.2
1.2
1.8
1.8
2.6
2.6
3.8
3.8
5.6
5.6
6.8
6.8
8.2
8.2
8.2
10
7 mil Pad/10 mil Chip
9 mil Pad/12 mil Chip
7 mil Pad/10 mil Chip
9 mil Pad/12 mil Chip
7 mil Pad/10 mil Chip
9 mil Pad/12 mil Chip
7 mil Pad/10 mil Chip
9 mil Pad/12 mil Chip
7 mil Pad/10 mil Chip
9 mil Pad/12 mil Chip
7 mil Pad/10 mil Chip
9 mil Pad/12 mil Chip
7 mil Pad/10 mil Chip
9 mil Pad/12 mil Chip
7 mil Pad/10 mil Chip
9 mil Pad/12 mil Chip
15 mil Pad/18 mil Chip
7 mil Pad/10 mil Chip
9 mil Pad/12 mil Chip
15 mil Pad/18 mil Chip
7 mil Pad/10 mil Chip
9 mil Pad/12 mil Chip
15 mil Pad/18 mil Chip
9 mil Pad/12 mil Chip
15 mil Pad/18 mil Chip
15 mil Pad/18 mil Chip
15 mil Pad/18 mil Chip
15 mil Pad/18 mil Chip
24 mil Pad/30 mil Chip
34 mil Pad/40 mil Chip
34 mil Pad/40 mil Chip
34 mil Pad/40 mil Chip
44 mil Pad/50 mil Chip
60 mil Pad/68 mil Chip
SC = Silicon Capacitor
XXXX = Capacitance (pF)
YY = Square Contact Size (mils)
ZZ = Square Chip Size (mils)
ZZ
0.001ꢀ
YY
0.001ꢀ
0.005
CHIP THICKNESS
0.001ꢀ
Performance Data
10
Tests on typical MIS capacitors at L and S band show
insertion loss to be 1/2 to 1/3 that of equivalent ceramic
type capacitors, without any of the associated resonance
problems. Power tests indicate that the only limitation is
the actual breakdown voltage of the device (see data
section). A typical insertion loss versus frequency graph
is shown in Figure 1.This data is taken from an actual tests
circuit with series mounted beam-lead or chip capacitors
on a 50 Ω microstrip transmission line. The apparent
higher loss at lower frequencies on the lower capacitance
units is strictly due to the capacitive reactance of the
capacitor.
10
15
15
15
22
22
33
47
68
100
100
222
333
500
1000
10.0
1 pF
1.0
8.2 pF
♦ Available through distribution.
100 pF
0.10
47 pF
1–47 pF
100 pF
0.01
2
6
10
14
18
Frequency (GHz)
Figure 1. Typical Insertion
Loss vs. Frequency (50 Ω System)
2
Skyworks Solutions, Inc. [978] 241-7000 • Fax [978] 241-7906 • Email sales@skyworksinc.com • www.skyworksinc.com
Specifications subject to change without notice. 10/02A
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