IPD038N06NF2S
Infineon's StrongIRFET™ 2 power MOSFET 60 V features low RDS(on) of 3.85 mOhm, addressing a broad range of applications from low- to high-switching frequency.
INFINEON
ECE
EATON
VISHAY
ONSEMI
MSYSTEM
MSYSTEM
MSYSTEM
R3-PS3K
Remote I/O R3 Series POWER SUPPLY MODULE
MSYSTEM
KUS-CD-J
Plug-in Signal Conditioners K-UNIT
MSYSTEM
MURATA
MSYSTEM
VISHAY
FQD5P10TM
功率 MOSFET，P 沟道，QFET®，-100 V，-3.6 A，1.05 Ω，DPAK
ONSEMI
MSYSTEM
TCS-5C-R
Plug-in Signal Conditioners M-UNIT
MSYSTEM
ONSEMI
DRA756PPIGABZQ1
适用于信息娱乐应用、具有 ISP 并与 DRA75x SoC 实现引脚兼容的多核 SoC 处理器 | ABZ | 760 | -40 to 125
TI
TI
TL50HZGRAOSI
TL50HZ High Brightness Universal AC Voltage Tower Light
BANNER
MSYSTEM
MSYSTEM
MURATA
PRU-22-C
Plug-in Signal Conditioners M-UNIT
MSYSTEM
BANNER
IDEC
MSYSTEM
MSYSTEM
TDK
TPSM843A26
4-V to 18-V input, advanced current mode, 16-A synchronous SWIFT™ step-down power module
TI
KYOCERA AVX
AMPHENOL
SAMTEC
WALSIN
VISHAY
MSYSTEM
GLENAIR
ITT
MICROSEMI
YAGEO
ECLIPTEK
ABRACON
MOLEX
VICOR
KEMET
MTRONPTI
TI
PANASONIC
CTS
SCHURTER
KNOWLES
MURATA
TE
TOREX
SILICON
BOURNS
GOLLEDGE
STMICROELECTRONICS
RCD
BEL
NXP
MICROCHIP
TDK
KOA
INFINEON
FOXCONN
EUROQUARTZ
MAXIM
LITTELFUSE
VCC
RENESAS
CDE
IDT
AVAGO
HONEYWELL
ONSEMI
FH
NICHICON
APITECH
ROHM
EPCOS
AGILENT
GRAYHILL
ADI
Carling Technologies
RICOH
