CXK58257ATM-70L [SONY]
Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 8 X 13.4 MM, PLASTIC, TSOP-28;
| 型号： | CXK58257ATM-70L |
| 厂家： | 
SONY CORPORATION |
| 描述： | Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 8 X 13.4 MM, PLASTIC, TSOP-28 静态存储器 光电二极管 |
| 文件： | 总10页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
-70L/10L
CXK58257ATM/AYM
-70LL/10LL
32768-word x 8-bit High Speed CMOS Static RAM
Block Diagram
Description
CXK58257ATM/AYM is a 256K-bit, 32,768-word-by-
8-bit, CMOS static RAM.
A14
A13
A12
A11
A9
A8
A7
A6
A5
It is suitable for portable and battery back-up systems
which require extremely small packages and low
stand-by current.
VCC
Memory
Row
Decoder
Matrix
512x512
Buffer
GND
Features
• Thin small-outline package:
CXK58257ATM:
CXK58257AYM:
8mm x 13.4mm, 28 pin TSOP
8mm x 13.4mm, 28 pin TSOP
A10
A4
A3
A2
A1
A0
(Mirror image pinout)
• Low stand-by current:
L-Version:
I/O Gate
Column
Decoder
Buffer
Buffer
25µA (max.) @VCC = 5.5V, Ta = 0 to +70°C
LL-Version:
OE
5µA (max.) @VCC = 5.5V, Ta = 0 to +70°C
• Low voltage data retention: 2.0V (min.)
WE
I/O Buffer
• Fast access time:
(Access time)
CE
I/O1
I/O8
CXK58257ATM/AYM-70L, -70LL
CXK58257ATM/AYM-10L, -10LL
• Single + 5V supply: 5V ± 10 %
70ns (max.)
100ns (max.)
Function
32768-word-x-8-bit static RAM
Structure
Silicon gate CMOS IC
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication
or otherwise under any patents or other rights. Application circuits shown, if any, are typical examples illustrating the operation of the devices.
Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E9044A46-ST
CXK58257ATM/AYM
Pin Configuration (Top View)
Pin Description
Symbol
Description
Address input
OE
A11
A9
22
23
24
25
26
27
21
20
19
18
17
16
15
14
13
12
11
10
9
A10
CE
A0 to A14
I/O8
I/O7
I/O6
I/O5
I/O4
GND
I/O3
I/O2
I/O1
A0
I/O1 to l/O8 Data input/output
A8
A13
WE
VCC
A14
A12
A7
A6
A5
A4
A3
CE
Chip enable input
Write enable input
Output enable input
+5V power supply
Ground
28
CXK5V8257ATM
WE
OE
1
2
3
4
5
6
7
VCC
GND
A1
A2
8
A3
A4
A5
A6
A7
A12
A14
VCC
WE
A13
A8
A9
A11
OE
7
6
5
4
3
2
1
28
27
26
25
24
23
22
8
9
A2
A1
A0
10
11
12
13
14
15
16
17
18
19
20
21
I/O1
I/O2
I/O3
GND
I/O4
I/O5
I/O6
I/O7
I/O8
CE
CXK5V8257AYM
(Mirror Image Pinout)
A10
Absolute Maximum Ratings
(Ta = +25°C, GND = 0V)
Item
Symbol
VCC
VIN
Rating
Unit
Supply voltage
–0.5 to +7.0
V
Input voltage
–0.5(1) to VCC +0.5
–0.5(1) to VCC +0.5
0.7
V
V
Input and output voltage
Allowable power dissipation
Operating temperature
Storage temperature
Soldering temperature
NOTE:
Vl/O
PD
W
Topr
0 to +70
°C
Tstg
–55 to +150
235 • 10
°C
Tsolder
°C • sec
1. VIN,VI/O = –3.0V min. for pulse width less than 50ns.
–2–
CXK58257ATM/AYM
Truth Table
CE
H
L
OE
X
WE
X
Mode
Not selected
Output disable
Read
I/O1 to l/O8
High Z
VCC Current
ISB1, ISB2
ICC1, ICC2
ICC1, ICC2
ICC1, ICC2
H
H
High Z
L
L
H
Data out
Data in
L
X
L
Write
NOTE:
X: “H” or “L”
DC Recommended Operating Conditions
(Ta = 0 to +70°C, GND = 0V)
Item
Symbol
VCC
VIH
Min.
4.5
Typ.
5.0
—
Max.
5.5
Unit
V
Supply voltage
Input high voltage
Input low voltage
2.2
–0.3(1)
VCC +0.3
0.8
V
VIL
—
V
NOTE:
1. VIL = –3.0V min. for pulse width less than 50ns.
Electrical Characteristics
DC Characteristics
(VCC = 5V ±10V%, GND = 0V, Ta = 0 to = +70°C)
-70L/10L -70LL/10LL
Min. Typ.(1) Max. Min. Typ.(1) Max. Unit
Item
Symbol
ILI
Test Conditions
Input leakage current
Output leakage current
VIN = GND to VCC
–0.5
–0.5
—
—
0.5 –0.5
0.5 –0.5
—
—
0.5
0.5
µA
µA
ILO
CE = VIH or OE = VIH
Vl/O = GND to VCC
Operating power
supply current
ICC1
CE = VIL, VIN = VIH or VIL,
IOUT = 0mA
—
—
3
1
10
5
—
—
3
1
10
5
mA
CE ≤ 0.2V
VIN ≤ 0.2V or ≥ VCC – 0.2V
Average operating
current
ICC2
ISB1
Cycle = Min.,
Duty = 100%
IOUT = 0mA
70L/70LL
—
—
30
23
50
50
—
—
30
23
50
50
10L/10LL
mA
µA
Standby current
CE ≥ VCC – 0.2V
0 to +70°C
0 to +40°C
+25°C
—
—
—
—
2.4
—
—
—
25
5
—
—
—
—
2.4
—
—
—
5
1
0.5
0.4
—
2
0.2
0.4
—
0.5
2
ISB2
VOH
VOL
CE = VIH
2
mA
V
Output high voltage
Output low voltage
IOH = –1.0mA
IOL = 2.1mA
—
0.4
—
0.4
—
—
V
NOTE:
1. VCC = 5V, Ta = +25°C
–3–
CXK58257ATM/AYM
I/O Capacitance
(Ta = +25°C, f = 1MHz)
Item
Symbol
CIN
Test Conditions
VIN = 0V
Min.
—
Max.
Unit
pF
Input capacitance
I/O capacitance
6
8
CI/O
Vl/O = 0V
—
pF
NOTE: This parameter is sampled and is not 100% tested.
AC Characteristics
AC Test Conditions
(VCC = 5V ±10V, Ta = 0 to +70°C)
Conditions
VIH = 2.2V
Item
Input pulse high level
Input pulse low level
Input rise time
TTL
VIL = 0.8V
tr = 5ns
CL
Input fall time
tf = 5ns
Input and output reference level
Output load conditions 10L/10LL
70L/70LL
1.5V
CL(1) = 100pF, 1TTL
CL(1) = 30pF, 1TTL
NOTE:
1. CL includes scope and jig capacitances.
–4–
CXK58257ATM/AYM
Read Cycle
-70L/70LL
-10L/10LL
Item
Symbol
tRC
Min.
70
—
—
—
20
10
5
Max.
Min.
100
—
—
—
20
10
5
Max.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Read cycle time
—
70
70
35
—
—
—
30
30
—
100
100
50
—
Address access time
tAA
Chip enable access time
tCO
Output enable to output valid
tOE
Output hold from address change
Chip enable to output in low Z (CE)
Output enable to output in low Z (OE)
Chip disable to output in high Z (CE)
Output disable to output in high Z (OE)
tOH
tLZ
—
tOLZ
—
(1)
tHZ
0
0
30
35
(1)
tOHZ
0
0
NOTE:
1. tHZ, tOHZ are defined as the time required for outputs to turn to high impedance state and are not referred to as output voltage
levels.
Write Cycle
-70L/70LL
-10L/10LL
Item
Symbol
tWC
tAW
Min.
70
65
65
30
0
Max.
Min.
100
80
80
35
0
Max.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Write cycle time
—
—
—
—
—
—
—
—
—
—
25
—
—
—
—
—
—
—
—
—
—
25
Address valid to end of write
Chip enable to end of write
Data to write time overlap
Data hold from write time
Write pulse width
tCW
tDW
tDH
tWP
50
0
60
0
Address setup time
tAS
Write recovery time (WE)
Write recovery time (CE)
Output active from end of write
Write to output in high Z
tWR
tWR1
tOW
0
0
0
0
10
0
10
0
(1)
tWHZ
NOTE:
1. tWHZ is defined as the time required for outputs to turn to high impedance state and is not referred to as output voltage level.
–5–
CXK58257ATM/AYM
Timing Waveform
Read Cycle (1): CE = OE = VIL, WE = VIH
tRC
Address
tAA
tOH
Data out Previous data valid
Data valid
Read Cycle (2): WE = VIH
tRC
Address
CE
tAA
tCO
tHZ
tLZ
OE
tOE
tOHZ
tOLZ
Data out
Data valid
High impedance
Write Cycle (1): WE Control
tWC
Address
OE
tWR
tAW
tCW
CE
tAS
tWP
WE
tDW
Data valid
tDH
Data in
tWHZ
tOW
Data out
High impedance
–6–
CXK58257ATM/AYM
Write Cycle (2): CE Control
tWC
Address
OE
tAW
tWR1
tAS
tCW
CE
tWP
WE
tDW
Data valid
tDH
Data in
tWHZ
tLZ
Data out
High impedance
NOTE:
If the I/O pins are in the output state, the data input signals of the opposite phase to the output must not be applied.
Data Retention Characteristics
(Ta = 0 to +70°C )
-70L/10L
-70LL/10LL
Item
Symbol
VDR
Test Conditions
CE ≥ VCC – 2.0V
Min.
2.0
—
Typ.
—
Max.
5.5
10
2
Min.
2.0
—
Typ.
—
Max.
5.5
3
Unit
V
Data retention voltage
Data retention current
ICCDR1
VCC = 3.0V
0 to +70°C
0 to +40°C
+25°C
—
—
µA
CE ≥ 2.8V
—
—
—
—
0.6
0.3
5
—
0.25
0.5
1
—
0.1
0.2
ICCDR2
VCC = 2.0V to 5.5V
—
25
—
µA
CE ≥ VCC –2.0V
Data retention setup time
tCDRS
tR
Chip disable to data
retention mode
0
—
—
—
—
0
—
—
—
—
ns
(1)
(1)
Recovery time
NOTE:
tRC
tRC
ms
1. tRC: Read cycle time
Data Retention Waveform
Data retention mode
tCDRS
tR
VCC
4.5V
2.2V
VDR
CE
CE ≥ VCC – 0.2V
GND
–7–
CXK58257ATM/AYM
Example of Representative Characteristics
Supply Current vs. Supply Voltage
Supply Current vs. Ambient Temperature
1.4
1.4
ICC1
1.2
1.0
1.2
1.0
0.8
0.8
ICC2
ICC2
ICC1
0.8
Ta = +25°C
VCC = 5.0V
0.6
4.5
4.75
5.0
5.25
5.5
0
20
40
60
80
VCC—Supply Voltage (V)
Ta—Ambient Temperature (°C)
Supply Current vs. Frequency
Access Time vs. Load Capacitance
120 100
70 ns
1.0
1.6
1.4
1.2
tOE
Write
0.75
0.5
Read
tAA, tCO
VCC = 5.0V
Ta = +25°C
0.25
0
1.0
0.8
0
4
8
12
16
0
100
200
300
400
CL—Load Capacitance (pF)
Frequency (1/tRC, 1/tWC) (MHz)
Access Time vs. Ambient Temperature
Access Time vs. Supply Voltage
1.4
1.4
1.2
1.0
1.2
1.0
tAA, tCO
tOE
,
tAA, tCO
tOE
0.8
0.6
0.8
0.6
VCC = 5.0V
Ta = +25°C
4.5
4.75
5.0
5.25
5.5
0
20
40
60
80
VCC—Supply Voltage (V)
Ta—Ambient Temperature (°C)
–8–
CXK58257ATM/AYM
Standby Current vs. Ambient Temperature
Standby Current vs. Supply Voltage
20
1.4
10
5
1.0
0.6
0.2
ISB1
2
1
ISB2
VCC = 5.0V
Ta = +25°C
0.5
0.2
2.0
3.0
4.0
5.0
6.0
0
20
40
60
80
VCC—Supply Voltage (V)
Ta—Ambient Temperature (°C)
Input Voltage Level vs. Supply Voltage
Standby Current vs. Ambient Temperature
1.2
1.1
1.0
1.4
1.2
1.0
0.8
0.6
VIL, VIH
0.9
0.8
VCC = 5.0V
Ta = +25°C
4.5
4.75
5.0
5.25
5.5
0
20
40
60
80
VCC—Supply Voltage (V)
Ta—Ambient Temperature (°C)
Output Low Current vs. Output Low Voltage
Output High Current vs. Output High Voltage
1.4
1.8
1.2
1.0
1.4
1.0
0.8
VCC = 5.0V
VCC = 5.0V
0.6
0.6
1
2
3
4
5
0
0.2
0.4
0.6
0.8
VOH—Output High Voltage (V)
VOL—Output Low Voltage (V)
–9–
CXK58257ATM/AYM
Package Dimensions
Unit: mm
CXK58257ATM
28 PIN TSOP (PLASTIC)
*8.0 ± 0.1
1.2 Max
0.10
21
8
A
22
281
7
+0.1
-0.05
0.2
0.55±0.1
+0.01
-0.05
0.05
0°-10°
Detail diagram of A
SONY NAME TSOP-28P-L01
Note: Dimensions marked with *
do not include resin residue.
EIAJ NAME
TSOP028-P-0000-A
JEDEC CODE
CXK58257AYM
28 PIN TSOP (PLASTIC)
*8.0 ± 0.1
1.2 Max
8
21
0.10
A
7
128
22
0.55±0.1
+0.1
-0.05
0.2
+0.01
-0.05
0.05
0°-10°
Detail diagram of A
SONY NAME TSOP-28P-L01R
Note) Dimensions marked with *
do not include resin residue.
EIAJ NAME
TSOP028-P-0000-B
JEDEC CODE
–10–
相关型号：
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明