CXK5T8257BYM-12LLX [SONY]
32768-word X 8-bit High Speed CMOS Static RAM; 32768字×8位高速CMOS静态RAM
| 型号： | CXK5T8257BYM-12LLX |
| 厂家： | 
SONY CORPORATION |
| 描述： | 32768-word X 8-bit High Speed CMOS Static RAM |
| 文件： | 总10页 (文件大小：211K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CXK5T8257BTM/BYM/BM -10LLX/12LLX
Preliminary
32768-word × 8-bit High Speed CMOS Static RAM
For the availability of this product, please contact the sales office.
Description
CXK5T8257BTM
CXK5T8257BYM
The CXK5T8257BTM/BYM/BM is 262,144 bits high
speed CMOS static RAM organized as 32768-words
by 8 bits.
28 pin TSOP (Plastic)
28 pin TSOP (Plastic)
Special feature are low power consumption and
high speed.
The CXK5T8257BTM/BYM/BM is a suitable RAM
for portable equipment with battery back up.
CXK5T8257BM
Features
28 pin SOP (Plastic)
• Extended operating temperature range: –25 to +85°C
• Wide supply voltage range operation: 2.7 to 3.6V
• Fast access time:
3.0V operation -10LLX
-12LLX
(Access time)
100ns (Max.)
120ns (Max.)
85ns (Max.)
100ns (Max.)
3.3V operation -10LLX
-12LLX
• Low standby current: 7.0µA (Max.)
• Low power data retention: 2.0V (Min.)
• Available in many packages
CXK5T8257BTM/BYM
Block Diagram
A14
A13
A12
A11
A9
8mm × 13.4mm 28 pin TSOP Package
VCC
CXK5T8257BM
Memory
Matrix
Row
Decoder
Buffer
450mil 28 pin SOP Package
A8
A7
GND
512 × 512
Function
A6
A5
32768-word × 8 bit static RAM
Structure
A10
A4
A3
A2
A1
A0
Silicon gate CMOS IC
I/O Gate
Column
Decoder
Buffer
Buffer
OE
WE
I/O Buffer
CE
I/O1
I/O8
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
– 1 –
PE96509-ST
CXK5T8257BTM/BYM/BM
Pin Configuration (Top View)
Pin Description
A10
CE
Symbol
A0 to A14
I/O1 to I/O8
CE
Description
Address input
OE
A11
A9
A8
A13
WE
22
23
24
25
26
27
21
20
19
18
17
16
15
14
13
12
11
10
9
A14
A12
A7
VCC
WE
A13
A8
1
2
28
27
26
25
24
23
22
21
20
19
18
17
16
15
I/O8
I/O7
I/O6
I/O5
I/O4
GND
I/O3
I/O2
I/O1
A0
3
A6
Data input/output
Chip enable input
Write enable input
Output enable input
Power supply
4
CXK5T8257BTM
(Standard Pinout)
VCC 28
A5
A9
5
A14
A12
A7
A6
A5
1
2
3
4
5
6
7
A11
A4
6
A3
7
OE
WE
A10
A2
8
A4
A3
A1
A2
A1
9
CE
8
OE
I/O8
A0
10
11
12
13
14
I/O1
I/O2
I/O3
GND
I/O7
I/O6
I/O5
I/O4
A2
A1
A0
I/O1
I/O2
I/O3
GND
I/O4
I/O5
I/O6
A3
A4
A5
A6
A7
A12
A14
VCC
WE
7
6
5
4
3
2
1
28
27
8
9
VCC
10
11
12
13
14
15
16
17
18
19
20
21
GND
Ground
CXK5T8257BYM
(Standard Pinout)
CXK5T8257BM
A13 26
A8
I/O7
I/O8
25
A9 24
A11
OE
CE
A10
23
22
Absolute Maximum Ratings
(Ta = 25°C, GND = 0V)
Item
Symbol
VCC
Rating
Unit
V
Supply voltage
–0.5 to +4.6
Input voltage
VIN
–0.5 1 to VCC + 0.5
–0.5 1 to VCC + 0.5
0.7
V
Input and output voltage
Allowable power dissipation
Operating temperature
Storage temperature
VI/O
V
PD
W
Topr
Tstg
–25 to +85
°C
°C
°C · s
–55 to +150
235 · 10
Soldering temperature · time Tsolder
1
VIN, VI/O = –3.0V Min. for pulse width less than 50ns.
Truth Table
CE OE WE
Mode
Not selected
Output disable
Read
I/O1 to I/O8
High Z
VCC Current
ISB1, ISB2
H
L
L
L
×
H
L
×
H
H
L
High Z
ICC1, ICC2
ICC1, ICC2
ICC1, ICC2
Data out
Data in
×
Write
×: "H" or "L"
– 2 –
CXK5T8257BTM/BYM/BM
DC Recommended Operating Conditions
(Ta = –25 to +85°C, GND = 0V)
VCC = 2.7 to 3.6V
Typ.
VCC = 3.3V ± 0.3V
Unit
Item
Symbol
Min.
3.0
Typ.
3.3
—
Max.
Min.
2.7
Max.
3.6
Supply voltage
VCC
VIH
VIL
3.6
3.3
Input high voltage
Input low voltage
V
VCC + 0.3
0.6
—
—
VCC + 0.3
0.4
2.2
2.4
1
1
—
–0.3
–0.3
1
VIL=–3.0V Min. for pulse width less than 50ns.
Electrical Characteristics
• DC characteristics
(VCC = 2.7 to 3.6V, GND = 0V, Ta = –25 to +85°C)
2
Item
Symbol
Test Conditions
Min. Typ.
Max. Unit
0.5
Input leakage current ILI
VIN = GND to VCC
–0.5
—
CE = VIH
OE = VIH or WE = VIL
VI/O = GND to VCC
Output leakage
current
µA
ILO
–0.5
—
0.5
CE = VIL
VIN = VIH or VIL
IOUT = 0mA
Operating power
supply current
ICC1
ICC2
ISB1
—
0.9
2
mA
3
4
18
35
10LLX
—
—
—
—
Average operating
current
Min. cycle
duty = 100%, IOUT = 0mA
18
—
35
12LLX
7.0
–25 to +85°C
–25 to +70°C
+25°C
CE ≥ VCC – 0.2V
—
3.5
—
µA
Standby current
0.12
0.06
—
—
0.7
ISB2
VOH
CE = VIH
mA
Output high
voltage
—
—
—
IOH = –2mA
2.4
—
V
Output low
voltage
0.4
VOL
IOL = 2.0mA
2 VCC = 3.3V, Ta = 25°C
3 ICC2 = 21mA for 3.3V operation (VCC = 3.3V ± 0.3V)
4 ICC3 = 40mA for 3.3V operation (VCC = 3.3V ± 0.3V)
– 3 –
CXK5T8257BTM/BYM/BM
I/O capacitance
Item
(Ta = 25°C, f = 1MHz)
Symbol Test condition Min.
Typ.
—
Max. Unit
VIN = 0V
VI/O = 0V
—
—
8
pF
pF
Input capacitance
I/O capacitance
CIN
—
10
CI/O
Note) This parameter is sampled and is not 100% tested.
AC Characteristics
• AC test conditions
(Ta = –25 to +85°C)
Conditions
Item
VCC = 2.7 to 3.6V
VIH = 2.4V
VIL = 0.4V
tr = 5ns
VCC = 3.3V ± 0.3V
VIH = 2.2V
VIL = 0.6V
tr = 5ns
Input pulse high level
Input pulse low level
Input rise time
TTL
CL
Input fall time
tf = 5ns
tf = 5ns
Input and output reference level
1.4V
1.4V
CL 1 = 100pF, 1TTL CL 1 = 30pF, 1TTL
CL 1 = 100pF, 1TTL CL 1 = 100pF, 1TTL
-10LLX
Output load conditions
-12LLX
1
CL includes scope and jig capacitances.
– 4 –
CXK5T8257BTM/BYM/BM
• Read cycle (WE = “H”)
VCC = 2.7 to 3.6V
-10LLX -12LLX
VCC = 3.3V ± 0.3V
-10LLX -12LLX
Item
Symbol
Unit
Min. Max. Min. Max.
Min. Max. Min. Max.
120
—
—
120
120
60
—
100
—
—
100
100
50
—
t
t
t
t
t
t
t
t
RC
AA
CO
OE
OH
LZ
85
—
—
—
20
10
10
—
—
—
85
85
50
—
—
—
35
35
100
—
—
100
100
50
—
Read cycle time
Address access time
—
—
—
Chip enable access time (CE)
Chip enable to output valid
—
—
—
20
10
10
—
20
10
10
—
ns
20
10
10
—
Chip hold from address change
Chip enable to output in low Z (CE)
Output enable to output in low Z (OE)
Chip disable to output in high Z (CE)
Output disable to output in high Z (OE)
—
—
—
—
—
OLZ
HZ
—
1
40
35
35
35
35
35
1
—
—
tOHZ
—
1
tHZ and tOHZ are defined as the time required for outputs to turn to high impedance state and are not referred
to as output voltage levels.
• Write cycle
VCC = 2.7 to 3.6V
-10LLX -12LLX
VCC = 3.3V ± 0.3V
-10LLX -12LLX
Item
Symbol
Unit
Min. Max. Min. Max.
Min. Max. Min. Max.
100
80
80
35
0
—
—
—
—
—
—
—
—
—
—
35
120
100
100
50
0
—
—
—
—
—
—
—
—
—
—
40
85
80
80
35
0
—
—
—
—
—
—
—
—
—
—
35
100
80
80
35
0
—
—
—
—
—
—
—
—
—
—
35
Write cycle time
t
t
t
t
t
t
t
t
t
t
WC
AW
CW
DW
DH
Address valid to end of write
Chip enable to end of write
Data to write time overlap
Data hold from write time
Write pulse width
60
0
70
0
60
0
60
0
ns
WP
AS
Address setup time
0
0
0
0
Write recovery time (WE)
Write recovery time (CE)
Output active from end of write
Write to output in high Z
WR
WR1
OW
0
0
0
0
10
—
10
—
10
—
10
—
2
tWHZ
2
tWHZ is defined as the time requied for outputs to turn to high impedance state and is not referred to as
output voltage level.
– 5 –
CXK5T8257BTM/BYM/BM
Timing waveform
• Read cycle (1) : CE = OE =VIL, WE = VIH
tRC
Address
tAA
tOH
Data out
Previous data valid
Data valid
• Read cycle (2): WE = VIH
tRC
Address
tAA
CE
tCO
tHZ
tLZ
OE
tOE
tOHZ
tOLZ
Data out
Data valid
High impedance
• Write cycle (1) : WE contorl
tWC
Address
tWR
tAW
OE
CE
tCW
1
[
]
tAS
tWP
WE
tDW
tDH
Data in
Data out
Data valid
tWHZ
tOW
High impedance
2
2
[
]
[ ]
– 6 –
CXK5T8257BTM/BYM/BM
• Write cycle (2): CE control
tWC
Address
OE
tAW
tAS
tCW
tWR1
CE
tWP
WE
tDW
tDH
Data in
Data valid
Data out
High impedance
1
Write is executed when both CE and WE are at low simultaneously.
2
Do not apply the data input voltage of the opposite phase to the output while I/O pin is output condition.
– 7 –
CXK5T8257BTM/BYM/BM
Data Retention Waveform
• Low supply voltage data retention waveform
Data retention mode
tCDRS
tR
VCC
2.7V
2.2V
VDR
CE
CE ≥ VCC – 0.2V
GND
Data Retention Characteristics
(Ta = –25 to +85°C)
Item
Symbol
VDR
Test conditions
CE ≥ VCC – 0.2V
Min.
2
Typ.
—
Max. Unit
Data retention voltage
3.6
6
V
—
—
—
—
–25 to +85°C
–25 to +70°C
+25°C
VCC = 3.0V
CE ≥ 2.8V
ICCDR1
ICCDR2
—
3
Data retention current
µA
0.1
—
VCC = 2.0 to 3.6V
CE ≥ VCC – 0.2V
1
—
0.12
7.0
Data retention
setup time
Chip disable to data
retention mode
t
t
CDRS
R
0
5
—
—
—
—
ns
Recovery time
ms
1
VCC = 3.3V, Ta = 25°C
– 8 –
CXK5T8257BTM/BYM/BM
Package Outline
Unit: mm
CXK5T8257BTM
28PIN TSOP (Plastic)
1.2 MAX
0.1
8.0 ± 0.1
21
8
A
22
28 1
7
+ 0.1
0.2 – 0.05
0.55 ± 0.1
+ 0.1
0.05 – 0.05
0° to 10°
DETAIL
A
NOTE: Dimension “ ” does not include mold protrusion.
PACKAGE STRUCTURE
PACKAGE MATERIAL
LEAD TREATMENT
LEAD MATERIAL
EPOXY RESIN
SOLDER PLATING
COPPER / 42 ALLOY
0.2g
SONY CODE
EIAJ CODE
TSOP-28P-L01
TSOP028-P-0000-A
JEDEC CODE
PACKAGE WEIGHT
CXK5T8257BYM
28PIN TSOP (Plastic)
8.0 ± 0.1
1.2 MAX
0.1
8
21
A
1 28
22
0.55 ± 0.1
7
+ 0.1
0.2 – 0.05
+ 0.1
0.05 – 0.05
0° to 10°
DETAIL
A
NOTE: Dimension “ ” does not include mold protrusion.
PACKAGE STRUCTURE
EPOXY RESIN
PACKAGE MATERIAL
LEAD TREATMENT
LEAD MATERIAL
SOLDER PLATING
COPPER / 42 ALLOY
0.2g
SONY CODE
EIAJ CODE
TSOP-28P-L01R
TSOP028-P-0000-B
JEDEC CODE
PACKAGE WEIGHT
– 9 –
CXK5T8257BTM/BYM/BM
CXK5T8257BM
28PIN SOP (PLASTIC)
+ 0.4
18.0 – 0.1
+ 0.4
2.3 – 0.15
28
15
0.15
+ 0.2
0.1 – 0.05
14
1
0° to 10°
0.4 ± 0.1
1.27
0.24
M
PACKAGE STRUCTURE
PACKAGE MATERIAL
LEAD TREATMENT
LEAD MATERIAL
EPOXY RESIN
SONY CODE
EIAJ CODE
SOP-28P-L05
SOP028-P-0450
SOLDER PLATING
42 ALLOY
JEDEC CODE
PACKAGE WEIGHT
0.7g
– 10 –
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