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SGM2016 [SONY]

GaAs N-channel Dual-Gate MES FET; 砷化镓N沟道双栅场效应管MES

SGM2016


元器件型号：	SGM2016
生产厂家：	SONY CORPORATION
描述和应用：	GaAs N-channel Dual-Gate MES FET 砷化镓N沟道双栅场效应管MES 栅
PDF文件：	总5页 (文件大小：63K)
下载文档：	下载PDF数据表文档文件
型号参数：SGM2016参数

SGM2016AM

GaAs N-channel Dual-Gate MES FET

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54 SONY

SGM2016AM

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, M254, 4 PIN

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0 SONY

SGM2016AN

GaAs N-channel Dual-Gate MES FET

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25 SONY

SGM2016AP

GaAs N-channel Dual-Gate MES FET

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18 SONY

SGM2016AP

GaAs N-channel Dual-Gate MES FET

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10 SONY

SGM2016AP

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, M255, 4 PIN

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0 SONY

SGM2016M

GaAs N-channel Dual-Gate MES FET

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51 SONY

SGM2016P

GaAs N-channel Dual-Gate MES FET

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41 SONY

SGM2019

Low Power, Low Dropout, RF-Linear Regulators

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690 SGMICRO

SGM2022

Dual, Low Dropout, 150mA RF - Linear Regulators

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416 SGMICRO

SGM2022

Dual, Low Dropout, 150mA

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98 ETC

SGM2022-AYN6/TR

Dual, Low Dropout, 150mA

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21 ETC

SGM2022-AYN6/TR

Dual, Low Dropout, 150mA RF - Linear Regulators

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26 SGMICRO

SGM2022-CYN6/TR

Dual, Low Dropout, 150mA RF - Linear Regulators

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26 SGMICRO

SGM2022-CYN6/TR

Dual, Low Dropout, 150mA

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16 ETC

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