SLD322XT-2 [SONY]
0.5W High Power Laser Diode; 0.5W高功率激光二极管
| 型号： | SLD322XT-2 |
| 厂家： | 
SONY CORPORATION |
| 描述： | 0.5W High Power Laser Diode |
| 文件： | 总7页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SLD322XT
0.5W High Power Laser Diode
Description
Equivalent Circuit
The SLD322XT is a high power, gain-guided laser diode produced
1
by MOCVD method . Compared to the SLD300 Series, this laser
TE Cooler
N
P
diode has a high brightness output with a doubled optical density
which can be achived by QW-SCH structure .
2
TH
LD
PD
Fine adjustment of the oscillation wavelength is possible by controlling
the temperature using the built-in TE cooler (Peltier element).
1
MOCVD: Metal Organic Chemical Vapor Deposition
2
1
2
3
4
5
6
7
8
QW-SCH: Quantum Well Separate Confinement Heterostructure
Features
• High power
Recommended optical power output: Po = 0.5W
• Low operating current: Iop = 0.75A (Po = 0.5W)
• Flat package with built-in photodiode, TE cooler, and thermistor
Pin Configuration (Top View)
No.
1
Function
Applications
• Solid state laser excitation
• Medical use
TE cooler (negative)
Thermistor lead 1
2
• Material processes
• Measurement
3
Thermistor lead 2
4
Laser diode (anode)
Laser diode (cathode)
Photodiode (cathode)
Photodiode (anode)
TE cooler (positive)
Structure
5
AlGaAs quantum well structure laser diode
6
Operating Lifetime
7
MTTF 10,000H (effective value) at Po = 0.5W, Tth = 25°C
8
Absolute Maximum Ratings (Tth = 25°C)
• Optical power output
• Reverse voltage
Po
VR
0.55
2
15
W
V
V
LD
PD
• Operating temperature (Tth)
• Storage temperature
Topr
Tstg
–10 to +30
–40 to +85
°C
°C
Warranty
This warranty period shall be 90 days after receipt of the product or
1,000 hours operation time whichever is shorter.
Sony Quality Assurance Department shall analyze any product that
fails during said warranty period, and if the analysis results show
that the product failed due to material or manufacturing defects on
the part of Sony, the product shall be replaced free of charge.
Laser diodes naturally have differing lifetimes which follow a Weibull
distribution.
1
8
Special warranties are also available.
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
– 1 –
E93206B02-PS
SLD322XT
Electrical and Optical Characteristics
Item
(Tth: Thermistor temperature, Tth = 25°C)
Min.
Conditions
Typ.
0.18
0.75
2.1
Max.
0.3
Unit
A
Symbol
Ith
Threshold current
Operating current
Operating voltage
Wavelength
Iop
Vop
λp
PO = 0.5W
PO = 0.5W
PO = 0.5W
A
1.2
V
3.0
nm
790
840
PO = 0.5W
VR = 10V
Monitor current
Imon
0.15
mA
0.8
3.0
Perpendicular
θ
degree
degree
µm
20
4
30
9
40
17
Radiation angle
PO = 0.5W
PO = 0.5W
Parallel
θ//
Position
∆X, ∆Y
∆φ
±100
±3
Positional accuracy
Angle
degree
W/A
Differential efficiency
ηD
PO = 0.5W
Tth = 25°C
0.5
0.9
10
Thermistor resistance
Rth
kΩ
Wavelength Selection Classification
Type
Wavelength (nm)
795 ± 5
SLD322XT-1
SLD322XT-2
SLD322XT-3
810 ± 10
830 ± 10
Type
Wavelength (nm)
798 ± 3
SLD322XT-21
SLD322XT-24
SLD322XT-25
807 ± 3
810 ± 3
Handling Precautions
Eye protection against laser beams
Safety goggles for
protection from
laser beam
Lens
The optical output of laser diodes ranges from
several mW to 3W. However the optical power
density of the laser beam at the diode chip
reaches 1MW/cm2. Unlike gas lasers, since
laser diode beams are divergent, uncollimated
laser diode beams are fairly safe at a laser
diode. For observing laser beams, ALWAYS use
safety goggles that block infrared rays. Usage of
IR scopes, IR cameras and fluorescent plates is
also recommended for monitoring laser beams
safely.
Laser diode
Optical
material
IR fluorescent plate
C
T
A
C
P
A
Optical boad
Optical power output control device
temperature control device
– 2 –
SLD322XT
Example of Representative Characteristics
Optical power output vs. Forward current characteristics
Optical power output vs. Monitor current characteristics
1000
Tth = 25°C
Tth = 0°C
Tth = –10°C
500
250
0
800
Tth = 30°C
Tth = 0°C Tth = 25°C
600
Tth = –10°C
Tth = 30°C
400
200
0
200
400
600
800
1000
0
0.5
1.0
IF – Forward current [mA]
Imon – Monitor current [mA]
Power dependence of far field pattern
(Parallel to junction)
Threshold current vs. Temperature characteristics
1000
Tth = 25°C
500
PO = 500mW
PO = 400mW
PO = 300mW
PO = 200mW
PO = 100mW
100
–10
0
10
20
30
–90
–60
–30
0
30
60
90
Tth – Thermistor temperature [°C]
Angle [degree]
Power dependence of far field pattern
(Perpendicular to junction)
Temperature dependence of far field pattern
(Parallel to junction)
Tth = 25°C
PO = 500mW
PO = 500mW
PO = 400mW
PO = 300mW
PO = 200mW
PO = 100mW
Tth = 25°C
Tth = 10°C
Tth = –5°C
–90
–60
–30
0
30
60
90
–90
–60
–30
0
30
60
90
Angle [degree]
Angle [degree]
– 3 –
SLD322XT
Temperature dependence of far field pattern
(Perpendicular to junction)
Dependence of wavelength
Po = 500mW
820
810
800
790
PO = 500mW
Tth = 25°C
Tth = 10°C
Tth = –5°C
–90
–60
–30
0
30
60
90
–10
0
10
20
30
Angle [degree]
Tth – Thermistor temperature [°C]
Differential efficiency vs. Temperature characteristics
Thermistor characteristics
50
1.0
10
5
0.5
1
0
–10
0
10 20 30 40 50 60 70
–10
0
10
20
30
Tth – Thermistor temperature [°C]
Tth – Thermistor temperature [°C]
TE cooler characteristics
TE cooler characteristics 1
TE cooler characteristics 2
Tth = 25°C
10
10
Tc = 33°C
IT = 2.5A
∆T VS VT
5
4
3
2
1
0
5
4
3
2
1
0
2.0A
1.5A
5
5
1.0A
2.0A
0.5A
2.0A
1.5A
50
∆T [°C]
0
0
0
50
100
0
100
∆T – Temperature difference [°C]
∆T: Tc – Tth
Tth: Thermistor temperature
Tc: Case temperature
– 4 –
SLD322XT
Power dependence of spectrum
1.0
1.0
0.8
0.6
0.4
0.2
Tth = 25°C
Po = 0.2W
Tth = 25°C
Po = 0.3W
0.8
0.6
0.4
0.2
796
798
800
802
804
796
798
800
802
804
Wavelength [nm]
Wavelength [nm]
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.2
Tth = 25°C
Po = 0.4W
Tth = 25°C
Po = 0.5W
796
798
800
802
804
796
798
800
802
804
Wavelength [nm]
Wavelength [nm]
– 5 –
SLD322XT
Temperature dependence of spectrum (Po = 0.5W)
1.0
1.0
0.8
0.6
0.4
0.2
Tth = –10°C
Tth = 0°C
0.8
0.6
0.4
0.2
785
790
795
800
805
810
815
785
790
795
800
805
810
815
Wavelength [nm]
Wavelength [nm]
1.0
1.0
0.8
0.6
0.4
0.2
Tth = 25°C
Tth = 30°C
0.8
0.6
0.4
0.2
785
790
795
800
805
810
815
785
790
795
800
805
810
815
Wavelength [nm]
Wavelength [nm]
– 6 –
SLD322XT
Package Outline
Unit: mm
M – 273(LO – 10)
+ 0.05
33.0 ± 0.05
4 – Ø3.0
0
Window
Glass
Ø5.0
4 – R1.2 ± 0.3
8 – Ø0.6
2.54
38.0 ± 0.5
LD Chip
19.0
28.0 ± 0.5
Reference Plane
16.5 ± 0.1
*
*Distance between pilot hole and emittng area
PACKAGE STRUCTURE
SONY CODE
M-273(LO-10)
43g
PACKAGE WEIGHT
EIAJ CODE
JEDEC CODE
– 7 –
Sony Corporation
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