SLD323V-2 [SONY]
High Power Density 1W Laser Diode; 高功率密度1W激光二极管
| 型号： | SLD323V-2 |
| 厂家： | 
SONY CORPORATION |
| 描述： | High Power Density 1W Laser Diode |
| 文件： | 总7页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SLD323V
High Power Density 1W Laser Diode
Description
1
The SLD323V is a high power, gain-guided laser diode produced by MOCVD method . Compared to the
SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be
2
achieved by QW-SCH structure .
1
MOCVD: Metal Organic Chemical Vapor Deposition
2
QW-SCH: Quantum Well Separate Confinement Heterostructure
Features
• High power
Recommended optical power output: Po = 1.0W
• Low operating current: Iop = 1.4A (Po = 1.0W)
Applications
• Solid state laser excitation
• Medical use
• Material processes
• Measurement
Structure
GaAlAs quantum well structure laser diode
Absolute Maximum Ratings (Tc = 25°C)
• Optical power output
• Reverse voltage
Po
1.1
2
W
V
VR
LD
PD
15
V
• Operating temperature (Tc) Topr
–10 to +30
–40 to +85
°C
°C
• Storage temperature
Tstg
Pin Configuration
2
1
3
1. LD cathode
2. PD anode
3. COMMON
Bottom View
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
– 1 –
E93207A81-PS
SLD323V
Electrical and Optical Characteristics
Item
(Tc: case temperature, Tc = 25°C)
Min.
Conditions
Typ.
0.3
1.4
2.1
Max.
0.5
Unit
A
Symbol
Ith
Threshold current
Operating current
Iop
Vop
λp
PO = 1.0W
PO = 1.0W
PO = 1.0W
A
2.0
V
Operating voltage
3.0
1
nm
Wavelength
790
0.3
840
PO = 1.0W
VR = 10V
Monitor current
Imon
mA
1.5
6.0
Perpendicular
θ
degree
degree
µm
20
4
30
9
40
17
Radiation angle
(F. W. H. M. )
PO = 1.0W
Parallel
Position
Angle
θ//
∆X, ∆Y
∆φ
±50
±3
Positional accuracy
Differential efficiency
PO = 1.0W
PO = 1.0W
degree
W/A
ηD
0.5
0.9
F. W. H. M. : Full Width at Half Maximum
1 Wavelength Selection Classification
Type
Wavelength (nm)
795 ± 5
SLD323V-1
SLD323V-2
SLD323V-3
810 ± 10
830 ± 10
Type
Wavelength (nm)
798 ± 3
SLD323V-21
SLD323V-24
SLD323V-25
807 ± 3
810 ± 3
Handling Precautions
Eye protection against laser beams
Safety goggles for
protection from
laser beam
Lens
The optical output of laser diodes ranges from
several mW to 3W. However the optical power
density of the laser beam at the diode chip
reaches 1MW/cm2. Unlike gas lasers, since
laser diode beams are divergent, uncollimated
laser diode beams are fairly safe at a laser
diode. For observing laser beams, ALWAYS use
safety goggles that block infrared rays. Usage of
IR scopes, IR cameras and fluorescent plates is
also recommended for monitoring laser beams
safely.
Laser diode
Optical
material
IR fluorescent plate
C
T
A
C
P
A
Optical boad
Optical power output control device
temperature control device
– 2 –
SLD323V
Example of Representative Characteristics
Optical power output vs. Forward current characteristics
Optical power output vs. Monitor current characteristics
1500
TC = 25°C
TC = 15°C
TC = 0°C
TC = –10°C
1000
500
0
TC = 0°C
TC = –10°C
1200
900
600
300
TC = 25°C
TC = 30°C
TC = 30°C
0
400
800
1200
1600
2000
0
1.5
IF – Forward current [mA]
Imon – Monitor current [mA]
Power dependence of far field pattern
(Parallel to junction)
Threshold current vs. Temperature characteristics
1000
TC = 25°C
500
PO = 1000mW
PO = 800mW
PO = 600mW
PO = 400mW
PO = 200mW
100
–10
0
10
20
30
–90
–60
–30
0
30
60
90
Tc – Case temperature [°C]
Angle [degree]
Power dependence of far field pattern
(Perpendicular to junction)
Tempareture dependence of far field pattern
(Parallel to junction)
TC = 25°C
PO = 1000mW
PO = 1000mW
PO = 800mW
PO = 600mW
TC = 25°C
TC = 10°C
TC = –5°C
PO = 400mW
PO = 200mW
–90
–60
–30
0
30
60
90
–90
–60
–30
0
30
60
90
Angle [degree]
Angle [degree]
– 3 –
SLD323V
Temperature dependence of far field pattern
(Perpendicular to junction)
Dependence of wavelength
Po = 1000mW
PO = 1000mW
820
810
800
790
TC = 25°C
TC = 10°C
TC = –5°C
–90
–60
–30
0
30
60
90
–10
0
10
20
30
Angle [degree]
Tc – Case temperature [°C]
Differential efficiency vs. Temperature characteristics
1.0
0.5
0
–10
0
10
20
30
Tc – Case temperature [°C]
– 4 –
SLD323V
Power dependence of spectrum
1.0
1.0
0.8
0.6
0.4
0.2
Tc = 25°C
Po = 400mW
Tc = 25°C
Po = 600mW
0.8
0.6
0.4
0.2
802
804
806
808
810
802
804
806
808
810
Wavelength [nm]
Wavelength [nm]
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.2
Tc = 25°C
Po = 800mW
Tc = 25°C
Po = 1000mW
802
804
806
808
810
802
804
806
808
810
Wavelength [nm]
Wavelength [nm]
– 5 –
SLD323V
Temperature dependence of spectrum (Po = 1.0W)
1.0
1.0
0.8
0.6
0.4
0.2
Tc = –10°C
Tc = 0°C
0.8
0.6
0.4
0.2
790
795
800
805
810
815
820
790
795
800
805
810
815
820
Wavelength [nm]
Wavelength [nm]
1.0
1.0
0.8
0.6
0.4
0.2
Tc = 25°C
Tc = 30°C
0.8
0.6
0.4
0.2
790
795
800
805
810
815
820
790
795
800
805
810
815
820
Wavelength [nm]
Wavelength [nm]
– 6 –
SLD323V
Package Outline
Unit: mm
M-248 (LO-11)
Reference
Slot
1.0
3
2
1
Photo
Diode
0
φ9.0 – 0.015
φ7.7 MAX
φ6.9 MAX
φ3.5
Window
Glass
Reference
Plane
LD Chip
3 – φ0.45
Optical
Distance = 2.55 ± 0.05
PCD φ2.54
PACKAGE WEIGHT
1.2g
SONY CODE
M-248
EIAJ CODE
JEDEC CODE
– 7 –
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