AM29F200BB-90DTH1 [SPANSION]

Flash, 256KX8, 90ns;
AM29F200BB-90DTH1
型号: AM29F200BB-90DTH1
厂家: SPANSION    SPANSION
描述:

Flash, 256KX8, 90ns

文件: 总10页 (文件大小:237K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SUPPLEMENT  
Am29F200B Known Good Die  
2 Megabit (256 K x 8-Bit/128 K x 16-Bit)  
CMOS 5.0 Volt-only, Sectored Flash Memory—Die Revision 1  
DISTINCTIVE CHARACTERISTICS  
5.0 V ± 10% for read and write operations  
Embedded Algorithms  
— Minimizes system level power requirements  
— Embedded Erase algorithm automatically  
preprograms and erases the entire chip or any  
combination of designated sectors  
Manufactured on 0.32 µm process technology  
— Compatible with 0.5 µm Am29F200A device  
— Embedded Program algorithm automatically  
writes and verifies data at specified addresses  
High performance  
— 70, 90, or 120 ns access time  
Minimum 1,000,000 write/erase cycles  
guaranteed  
Low power consumption  
Compatible with JEDEC standards  
— 20 mA typical active read current (byte mode)  
— Pinout and software compatible with  
single-power-supply flash  
— 28 mA typical active read current for  
(word mode)  
— Superior inadvertent write protection  
— 30 mA typical program/erase current  
— 1 µA typical standby current  
Data# Polling and Toggle Bit  
— Detects program or erase cycle completion  
Ready/Busy# output (RY/BY#)  
Sector erase architecture  
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and  
three 64 Kbyte sectors (byte mode)  
— Hardware method for detection of program or  
erase cycle completion  
— One 8 Kword, two 4 Kword, one 16 Kword, and  
three 32 Kword sectors (word mode)  
Erase Suspend/Resume  
— Supports full chip erase  
— Supports reading data from a sector not being  
erased  
— Sector Protection features:  
A hardware method of locking a sector to prevent  
any program or erase operations within that  
sector  
Hardware RESET# pin  
— Resets internal state machine to the reading  
array data  
Sectors can be locked via programming  
equipment  
20-year data retention at 125°C  
Temporary Sector Unprotect feature allows code  
changes in previously locked sectors  
Tested to datasheet specifications at  
temperature  
Top or bottom boot block configurations  
— High temperature range (–55°C to +140°C)  
available  
available  
Quality and reliability levels equivalent to  
standard packaged components  
Publication# 21257 Rev: D Amendment/+2  
Issue Date: July 12, 1999  
S U P P L E M E N T  
GENERAL DESCRIPTION  
The Am29F200B in Known Good Die (KGD) form is a  
2 Mbit, 5.0 Volt-only Flash memory. AMD defines KGD  
as standard product in die form, tested for functionality  
and speed. AMD KGD products have the same reli-  
ability and quality as AMD products in packaged form.  
before executing the erase operation. During erase,  
the device automatically times the erase pulse widths  
and verifies proper cell margin.  
The host system can detect whether a program or  
erase operation is complete by observing the RY/BY#  
pin, or by reading the DQ7 (Data# Polling) and DQ6/  
DQ2 (toggle) status bits. After a program or erase  
cycle has been completed, the device is ready to read  
array data or accept another command.  
Am29F200B Features  
The Am29F200B is organized as 262,144 bytes of 8  
bits each or 131,072 words of 16 bits each. The 8-bit  
data appears on DQ0-DQ7; the 16-bit data appears on  
DQ0-DQ15. This device is designed to be programmed  
The sector erase architecture allows memory sectors  
to be erased and reprogrammed without affecting the  
data contents of other sectors. The device is fully  
erased when shipped from the factory.  
in-system with the standard system 5.0 Volt V  
CC  
supply. A 12.0 volt V  
erase operations.  
is not required for program or  
PP  
The standard Am29F200B in KGD form offers an  
access time of 70, 90, or 120 ns, allowing high-speed  
microprocessors to operate without wait states. To  
eliminate bus contention the device has separate chip  
enable (CE#), write enable (WE#), and output enable  
(OE#) controls.  
Hardware data protection measures include a low  
detector that automatically inhibits write opera-  
VCC  
tions during power transitions. The hardware sector  
protection feature disables both program and erase  
operations in any combination of the sectors of mem-  
ory. This can be achieved via programming equipment.  
The device requires only a single 5.0 volt power sup-  
ply for both read and write functions. Internally gener-  
ated and regulated voltages are provided for the  
program and erase operations.  
The Erase Suspend feature enables the user to put  
erase on hold for any period of time to read data from,  
or program data to, any sector that is not selected for  
erasure. True background erase can thus be achieved.  
The device is entirely command set compatible with the  
JEDEC single-power-supply Flash standard. Com-  
mands are written to the command register using stan-  
dard microprocessor write timings. Register contents  
serve as input to an internal state-machine that con-  
trols the erase and programming circuitry. Write cycles  
also internally latch addresses and data needed for the  
programming and erase operations. Reading data out  
of the device is similar to reading from other Flash or  
EPROM devices.  
The hardware RESET# pin terminates any operation  
in progress and resets the internal state machine to  
reading array data. The RESET# pin may be tied to the  
system reset circuitry. A system reset would thus also  
reset the device, enabling the system microprocessor  
to read the boot-up firmware from the Flash memory.  
The system can place the device into the standby mode.  
Power consumption is greatly reduced in this mode.  
AMD’s Flash technology combines years of Flash mem-  
ory manufacturing experience to produce the highest lev-  
els of quality, reliability and cost effectiveness. The device  
electrically erases all bits within a sector simulta-  
neously via Fowler-Nordheim tunneling. The data is  
programmed using hot electron injection.  
Device programming occurs by executing the program  
command sequence. This initiates the Embedded  
Program algorithm—an internal algorithm that auto-  
matically times the program pulse widths and verifies  
proper cell margin.  
Electrical Specifications  
Device erasure occurs by executing the erase com-  
mand sequence. This initiates the Embedded Erase  
algorithm—an internal algorithm that automatically  
preprograms the array (if it is not already programmed)  
Refer to the Am29F200B data sheet, publication number  
21526, for full electrical specifications on the Am29F200B.  
PRODUCT SELECTOR GUIDE  
Family Part Number  
Am29F200B KGD  
Speed Option (V  
= 5.0 V ± 10%)  
-75 (V  
CC  
= 5.0 V ± 5%)  
-90  
90  
90  
35  
-120  
120  
120  
50  
CC  
Max access time, ns (t  
)
70  
70  
30  
ACC  
Max CE# access time, ns (t  
)
CE  
Max OE# access time, ns (t  
)
OE  
2
Am29F200B Known Good Die  
S U P P L E M E N T  
DIE PHOTOGRAPH  
DIE PAD LOCATIONS  
9 8 7 6 5 4 3 2 1 42 41 40 3938  
35 34  
37 36  
33  
32  
10  
11  
31  
12  
AMD logo location  
131415 16 1718 1920 21 22 23  
24 25 262728 2930  
Am29F200B Known Good Die  
3
S U P P L E M E N T  
Pad Center (mils)  
PAD DESCRIPTION  
Pad Center (millimeters)  
Pad  
Signal  
X
Y
0.00  
X
Y
1
V
0.00  
0.0000  
–0.1727  
–0.3251  
–0.4724  
–0.6223  
–0.7696  
–0.9220  
–1.0693  
–1.2192  
–1.4148  
–1.4605  
–1.4605  
–1.4503  
–1.3030  
–1.1659  
–1.0160  
–0.8788  
–0.7315  
–0.5918  
–0.4420  
–0.3048  
–0.0610  
0.2413  
0.7696  
0.9093  
1.0566  
1.1938  
1.3437  
1.4808  
1.6281  
1.6383  
1.6383  
1.6383  
1.3970  
1.2040  
1.0541  
0.9042  
0.7544  
0.6071  
0.4572  
0.3073  
0.1575  
0.0000  
0.0000  
0.0000  
0.0000  
0.0000  
0.0000  
0.0000  
0.0000  
0.0000  
0.0356  
–0.1651  
–0.4572  
–3.1725  
–3.1725  
–3.1725  
–3.1725  
–3.1725  
–3.1725  
–3.1648  
–3.1725  
–3.1725  
–3.2664  
–3.2664  
–3.1725  
–3.1725  
–3.1725  
–3.1725  
–3.1725  
–3.1725  
–3.1725  
–0.4572  
–0.1651  
0.0965  
0.0584  
0.0000  
0.0000  
0.0000  
0.0000  
0.0000  
0.0000  
0.0000  
0.0000  
CC  
2
DQ4  
DQ12  
DQ5  
–6.80  
–12.80  
–18.60  
–24.50  
–30.30  
–36.30  
–42.10  
–48.00  
–55.70  
–57.50  
–57.50  
–57.10  
–51.30  
–45.90  
–40.00  
–34.60  
–28.80  
–23.30  
–17.40  
–12.00  
–2.40  
9.50  
0.00  
3
0.00  
4
0.00  
5
DQ13  
DQ6  
0.00  
6
0.00  
7
DQ14  
DQ7  
0.00  
8
0.00  
9
DQ15/A-1  
0.00  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
V
1.40  
SS  
BYTE#  
A16  
A15  
A14  
A13  
A12  
A11  
A10  
A9  
–6.50  
–18.00  
–124.90  
–124.90  
–124.90  
–124.90  
–124.90  
–124.90  
–124.60  
–124.90  
–124.90  
–128.60  
–128.60  
–124.90  
–124.90  
–124.90  
–124.90  
–124.90  
–124.90  
–124.90  
–18.00  
–6.50  
3.80  
A8  
WE#  
RESET#  
RY/BY#  
A7  
30.30  
35.80  
41.60  
47.00  
52.90  
58.30  
64.10  
64.50  
64.50  
64.50  
55.00  
47.40  
41.50  
35.60  
29.70  
23.90  
18.00  
12.10  
6.20  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
CE#  
V
SS  
OE#  
DQ0  
DQ8  
DQ1  
DQ9  
DQ2  
DQ10  
DQ3  
DQ11  
2.30  
0.00  
0.00  
0.00  
0.00  
0.00  
0.00  
0.00  
0.00  
Note: The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment.  
4
Am29F200B Known Good Die  
S U P P L E M E N T  
ORDERING INFORMATION  
Standard Products  
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is  
formed by a combination of the following:  
Am29F200B  
T
-75  
DP  
C
1
DIE REVISION  
This number refers to the specific AMD manufacturing process and  
product technology reflected in this document. It is entered in the  
revision field of AMD standard product nomenclature.  
TEMPERATURE RANGE  
C
I
=
=
=
=
Commercial (0°C to +70°C)  
Industrial (–40°C to +85°C)  
Extended (–55°C to +125°C)  
High (–55°C to +140°C)  
E
H
PACKAGE TYPE AND  
MINIMUM ORDER QUANTITY  
DP  
DG  
DT  
DW  
=
=
=
=
Waffle Pack  
245 die per 5 tray stack  
Gel-Pak® Die Tray  
486 die per 6 tray stack  
Surftape™ (Tape and Reel)  
2500 per 7-inch reel  
Gel-Pak® Wafer Tray (sawn wafer on frame)  
Call AMD sales office for minimum order quantity  
SPEED OPTION  
See Product Selector Guide and Valid Combinations  
BOOT CODE SECTOR ARCHITECTURE  
T
B
=
=
Top sector  
Bottom sector  
DEVICE NUMBER/DESCRIPTION  
Am29F200B Known Good Die  
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS Flash Memory—Die Revision 1  
5.0 Volt-only Program and Erase  
Valid Combinations  
Valid Combinations  
Valid Combinations list configurations planned to be sup-  
ported in volume for this device. Consult the local AMD sales  
office to confirm availability of specific valid combinations and  
to check on newly released combinations.  
AM29F200BT-75,  
AM29F200BB-75  
(70 ns, V = 5.0 V ±5%)  
DPC 1, DPI 1, DPE 1, DPH 1,  
DGC 1, DGI 1, DGE 1, DGH 1,  
DTC 1, DTI 1, DTE 1, DTH 1,  
DWC 1, DWI 1, DWE 1, DWH 1  
CC  
AM29F200BT-90,  
AM29F200BB-90  
AM29F200BT-120,  
AM29F200BB-120  
Am29F200B Known Good Die  
5
S U P P L E M E N T  
PACKAGING INFORMATION  
Surftape Packaging  
AMD logo location  
Direction of Feed  
Orientation relative to  
leading edge of tape  
and reel  
Gel-Pak and Waffle Pack Packaging  
Orientation relative to  
top left corner of  
Gel-Pak  
and Waffle Pack  
cavity plate  
AMD logo location  
6
Am29F200B Known Good Die  
S U P P L E M E N T  
PRODUCT TEST FLOW  
Figure 1 provides an overview of AMD’s Known Good  
Die test flow. For more detailed information, refer to the  
Am29F200B product qualification database supple-  
ment for KGD. AMD implements quality assurance pro-  
cedures throughout the product test flow. In addition,  
an off-line quality monitoring program (QMP) further  
guarantees AMD quality standards are met on Known  
Good Die products. These QA procedures also allow  
AMD to produce KGD products without requiring or  
implementing burn-in.  
DC Parameters  
Functionality  
Programmability  
Erasability  
Wafer Sort 1  
Data Retention  
Bake  
24 hours at 250°C  
DC Parameters  
Functionality  
Programmability  
Erasability  
Wafer Sort 2  
DC Parameters  
Functionality  
Programmability  
Erasability  
Wafer Sort 3  
Hot Temperature  
Speed  
Incoming Inspection  
Wafer Saw  
Die Separation  
100% Visual Inspection  
Die Pack  
Packaging for Shipment  
Shipment  
Figure 1. AMD KGD Product Test Flow  
Am29F200B Known Good Die  
7
S U P P L E M E N T  
PHYSICAL SPECIFICATIONS  
MANUFACTURING INFORMATION  
Die dimensions . . . . . . . . . . . . . . 135 mils x 150 mils  
. . . . . . . . . . . . . . . . . . . . . . . . . . .3.43 mm x 3.81 mm  
Manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . . FASL  
Test . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SDC  
Die Thickness. . . . . . . . . . . . . . . . . . . . . . . . 19.7 mils  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .500 µm  
Manufacturing ID (Top Boot) . . . . . . . . . . . . 98480AK  
(Bottom Boot) . . . . . . . .98480ABK  
Bond Pad Size . . . . . . . . . . . . . . 4.69 mils x 4.69 mils  
. . . . . . . . . . . . . . . . . . . . . . . . . .115.9 µm x 115.9 µm  
Preparation for Shipment . . . . . . . . Penang, Malaysia  
Fabrication Process . . . . . . . . . . . . . . . . . . . . CS39S  
Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Pad Area Free of Passivation . . . . . . . . . .13.99 mils2  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9,025 µm2  
Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42  
Bond Pad Metalization . . . . . . . . . . . . . . . . . . . . Al/Cu  
SPECIAL HANDLING INSTRUCTIONS  
Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal,  
may be grounded (optional)  
Processing  
Do not expose KGD products to ultraviolet light or  
process them at temperatures greater than 250°C.  
Failure to adhere to these handling instructions will  
result in irreparable damage to the devices. For best  
yield, AMD recommends assembly in a Class 10K  
clean room with 30% to 60% relative humidity.  
Passivation. . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride  
DC OPERATING CONDITIONS  
VCC (Supply Voltage) . . . . . . . . . . . . . . .4.5 V to 5.5 V  
Junction Temperature Under Bias:  
Commerical, Industrial, and  
Storage  
Store at a maximum temperature of 30°C in a nitrogen-  
purged cabinet or vacuum-sealed bag. Observe all  
standard ESD handling procedures.  
Extended Temperature Range . . . . .TJ (max) = 130°C  
Junction Temperature Under Bias:  
High Tempeature Range . . . . . . . . .TJ (max) = 145°C  
Operating Temperature  
Commercial . . . . . . . . . . . . . . . . . . . 0°C to +70°C  
Industrial . . . . . . . . . . . . . . . . . . . –40°C to +85°C  
Extended . . . . . . . . . . . . . . . . . . –55°C to +125°C  
High . . . . . . . . . . . . . . . . . . . . . . –55°C to +140°C  
8
Am29F200B Known Good Die  
S U P P L E M E N T  
WITHOUT LIMITING THE FOREGOING, EXCEPT TO  
TERMS AND CONDITIONS OF SALE FOR  
AMD NON-VOLATILE MEMORY DIE  
THE EXTENT THAT AMD EXPRESSLY WARRANTS  
TO BUYER IN A SEPARATE AGREEMENT SIGNED  
BY AMD, AMD MAKES NO WARRANTY WITH  
RESPECT TO THE DIE’S PROCESSING OF DATE  
DATA, AND SHALL HAVE NO LIABILITY FOR  
DAMAGES OF ANY KIND, UNDER EQUITY, LAW, OR  
ANY OTHER THEORY, DUE TO THE FAILURE OF  
SUCH KNOWN GOOD DIE TO PROCESS ANY PAR-  
TICULAR DATA CONTAINING DATES, INCLUDING  
DATES IN AND AFTER THE YEAR 2000, WHETHER  
OR NOT AMD RECEIVED NOTICE OF THE POSSI-  
BILITY OF SUCH DAMAGES.  
All transactions relating to unpackaged die under this  
agreement shall be subject to AMD’s standard terms  
and conditions of sale, or any revisions thereof, which  
revisions AMD reserves the right to make at any time  
and from time to time. In the event of conflict between  
the provisions of AMD’s standard terms and conditions  
of sale and this agreement, the terms of this agreement  
shall be controlling.  
AMD warrants unpackaged die of its manufacture  
(“Known Good Die” or “Die”) against defective mate-  
rials or workmanship for a period of one (1) year from  
date of shipment. This warranty does not extend  
beyond the first purchaser of said Die. Buyer assumes  
full responsibility to ensure compliance with the  
appropriate handling, assembly and processing of  
Known Good Die (including but not limited to proper  
Die preparation, Die attach, wire bonding and related  
assembly and test activities), and compliance with all  
guidelines set forth in AMD’s specifications for Known  
Good Die, and AMD assumes no responsibility for envi-  
ronmental effects on Known Good Die or for any  
activity of Buyer or a third party that damages the Die  
due to improper use, abuse, negligence, improper  
installation, accident, loss, damage in transit, or unau-  
thorized repair or alteration by a person or entity other  
than AMD (“Warranty Exclusions”).  
THIS WARRANTY IS EXPRESSED IN LIEU OF ALL  
OTHER WARRANTIES, EXPRESSED OR IMPLIED,  
INCLUDING THE IMPLIED WARRANTY OF FITNESS  
FOR A PARTICULAR PURPOSE, THE IMPLIED  
WARRANTY OF MERCHANTABILITY AND OF ALL  
OTHER OBLIGATIONS OR LIABILITIES ON AMD’s  
PART, AND IT NEITHER ASSUMES NOR AUTHO-  
RIZES ANY OTHER PERSON TO ASSUME FOR  
AMD ANY OTHER LIABILITIES. THE FOREGOING  
CONSTITUTES THE BUYER’S SOLE AND EXCLU-  
SIVE REMEDY FOR THE FURNISHING OF DEFEC-  
TIVE OR NON CONFORMING KNOWN GOOD DIE  
AND AMD SHALL NOT IN ANY EVENT BE LIABLE  
FOR INCREASED MANUFACTURING COSTS,  
DOWNTIME COSTS, DAMAGES RELATING TO  
BUYER’S PROCUREMENT OF SUBSTITUTE DIE  
(i.e., “COST OF COVER”), LOSS OF PROFITS, REV-  
ENUES OR GOODWILL, LOSS OF USE OF OR  
DAMAGE TO ANY ASSOCIATED EQUIPMENT, OR  
ANY OTHER INDIRECT, INCIDENTAL, SPECIAL  
OR CONSEQUENTIAL DAMAGES BY REASON OF  
THE FACT THAT SUCH KNOWN GOOD DIE SHALL  
HAVE BEEN DETERMINED TO BE DEFECTIVE OR  
NON CONFORMING.  
The liability of AMD under this warranty is limited, at  
AMD’s option, solely to repair the Die, to send replace-  
ment Die, or to make an appropriate credit adjustment  
or refund in an amount not to exceed the original pur-  
chase price actually paid for the Die returned to AMD,  
provided that: (a) AMD is promptly notified by Buyer in  
writing during the applicable warranty period of any  
defect or nonconformity in the Known Good Die; (b)  
Buyer obtains authorization from AMD to return the  
defective Die; (c) the defective Die is returned to AMD  
by Buyer in accordance with AMD’s shipping instruc-  
tions set forth below; and (d) Buyer shows to AMD’s  
satisfaction that such alleged defect or nonconformity  
actually exists and was not caused by any of the above-  
referenced Warranty Exclusions. Buyer shall ship such  
defective Die to AMD via AMD’s carrier, collect. Risk of  
loss will transfer to AMD when the defective Die is pro-  
vided to AMD’s carrier. If Buyer fails to adhere to these  
warranty returns guidelines, Buyer shall assume all risk  
of loss and shall pay for all freight to AMD’s specified  
location. The aforementioned provisions do not extend  
the original warranty period of any Known Good Die  
that has either been repaired or replaced by AMD.  
Buyer agrees that it will make no warranty representa-  
tions to its customers which exceed those given by  
AMD to Buyer unless and until Buyer shall agree to  
indemnify AMD in writing for any claims which exceed  
AMD’s warranty.  
Known Good Die are not designed or authorized for  
use as components in life support appliances, devices  
or systems where malfunction of the Die can reason-  
ably be expected to result in a personal injury. Buyer’s  
use of Known Good Die for use in life support applica-  
tions is at Buyer’s own risk and Buyer agrees to fully  
indemnify AMD for any damages resulting in such use  
or sale.  
Am29F200B Known Good Die  
9
S U P P L E M E N T  
REVISION SUMMARY  
Revision C  
Packaging Information  
Added section. Moved orientation information from die  
photograph section into this section.  
Global  
Formatted to match current template. Modified  
Am29F200A data sheet for CS39S process technology.  
Revision D+1 (June 14, 1999)  
Terms and Conditions  
Physical Specifications  
Replaced warranty with new version.  
Corrected bond pad dimensions and deleted Si from  
the bond pad metalization specification.  
Revision D (December 1998)  
Revision D+2 (July 12, 1999)  
Global  
Global  
Added -75 speed option.  
The device is now available in the high temperature  
range (–55°C to +140°C). TJ (max) for this range is  
+145°C.  
Ordering Information  
Changed Gel-Pak quantity to 486. Corrected Surftape  
reel size to 7 inches.  
Trademarks  
Copyright © 1999 Advanced Micro Devices, Inc. All rights reserved.  
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.  
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.  
10  
Am29F200B Known Good Die  

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2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1
AMD

AM29F200BB-90DWC1

2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1
AMD

AM29F200BB-90DWC1

Flash, 128KX16, 90ns, WAFER-42
SPANSION

AM29F200BB-90DWD1

Flash, 128KX16, 90ns, WAFER-42
SPANSION

AM29F200BB-90DWE1

2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1
AMD

AM29F200BB-90DWF1

Flash, 128KX16, 90ns, WAFER-42
SPANSION

AM29F200BB-90DWH1

Flash, 256KX8, 90ns
SPANSION

AM29F200BB-90DWI1

2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1
AMD

AM29F200BB-90DWI1

Flash, 128KX16, 90ns, WAFER-42
SPANSION

AM29F200BB-90DWK1

Flash, 128KX16, 90ns, WAFER-42
SPANSION