AM29F400BB-90DPF1 [SPANSION]

Flash, 512KX8, 90ns,;


型号：	AM29F400BB-90DPF1
厂家：	SPANSION
描述：	Flash, 512KX8, 90ns,
文件：	总11页 (文件大小：147K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SUPPLEMENT

Am29F400B Known Good Die

4 Megabit (512 K x 8-Bit/256 K x 16-Bit)

CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 2

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

■ Embedded Algorithms

— 5.0 volt-only operation for read, erase, and

program operations

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

— Minimizes system level requirements

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

■ Manufactured on 0.32 µm process technology

— Compatible with 0.5 µm Am29F400 device

■ Minimum 1,000,000 write cycle per sector

■ High performance

guaranteed

— Acess time as fast as 70 ns

■ Compatibility with JEDEC standards

■ Low power consumption (typical values at

— Pinout and software compatible with single-

power-supply Flash

5 MHz)

— 1 µA standby mode current

— Superior inadvertent write protection

— 20 mA read current (byte mode)

— 28 mA read current (word mode)

— 30 mA program/erase current

■ Data# Polling and toggle bits

— Provides a software method of detecting program

or erase operation completion

■ Flexible sector architecture

■ Ready/Busy# pin (RY/BY#)

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

seven 64 Kbyte sectors (byte mode)

— Provides a hardware method of detecting

program or erase cycle completion

— One 8 Kword, two 4 Kword, one 16 Kword, and

seven 32 Kword sectors (word mode)

■ Erase Suspend/Erase Resume

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

— Supports full chip erase

— Sector Protection features:

A hardware method of locking a sector to prevent

any program or erase operations within that

sector

■ Hardware reset pin (RESET#)

— Hardware method to reset the device to reading

array data

Sectors can be locked via programming

equipment

■ 20-year data retention at 125°C

■ Tested to datasheet specifications at

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

temperature

■ Quality and reliability levels equivalent to

■ Top or bottom boot block configurations

standard packaged components

available

Publication# 21258 Rev: E Amendment/+2

Issue Date: June 14, 1999

S U P P L E M E N T

GENERAL DESCRIPTION

The Am29F400B in Known Good Die (KGD) form is a

4 Mbit, 5.0 volt-only Flash memory. AMD defines KGD

as standard product in die form, tested for functionality

and speed. AMD KGD products have the same reli-

ability and quality as AMD products in packaged form.

preprograms the array (if it is not already pro-

grammed) before executing the erase operation. Dur-

ing erase, the device automatically times the erase

pulse widths and verifies proper cell margin.

The host system can detect whether a program or

erase operation is complete by observing the RY/BY#

pin, or by reading the DQ7 (Data# Polling) and DQ6

(toggle) status bits. After a program or erase cycle has

been completed, the device is ready to read array data

or accept another command.

Am29F400B Features

The Am29F400B is a 4 Mbit, 5.0 volt-only Flash

memory organized as 524,288 bytes or 262,144 words.

The word-wide data (x16) appears on DQ15–DQ0; the

byte-wide (x8) data appears on DQ7–DQ0. This device

is designed to be programmed in-system with the stan-

The sector erase architecture allows memory sectors

to be erased and reprogrammed without affecting the

data contents of other sectors. The device is fully

erased when shipped from the factory.

dard system 5.0 volt V

supply. A 12.0 V V is not

required for write or erase operations. The device can

also be programmed in standard EPROM programmers.

This device is manufactured using AMD’s 0.32 µm

process technology, and offers all the features and ben-

efits of the Am29F400, which was manufactured using

0.5 µm process technology.

Hardware data protection measures include a low

detector that automatically inhibits write opera-

tions during power transitions. The hardware sector

protection feature disables both program and erase

operations in any combination of the sectors of mem-

ory. This can be achieved via programming equipment.

To eliminate bus contention the device has separate

chip enable (CE#), write enable (WE#) and output

enable (OE#) controls.

The Erase Suspend feature enables the user to put

erase on hold for any period of time to read data from,

or program data to, any sector that is not selected for

erasure. True background erase can thus be achieved.

The device requires only a single 5.0 volt power sup-

ply for both read and write functions. Internally gener-

ated and regulated voltages are provided for the

program and erase operations.

The hardware RESET# pin terminates any operation

in progress and resets the internal state machine to

reading array data. The RESET# pin may be tied to the

system reset circuitry. A system reset would thus also

reset the device, enabling the system microprocessor

to read the boot-up firmware from the Flash memory.

The device is entirely command set compatible with the

JEDEC single-power-supply Flash standard. Com-

mands are written to the command register using stan-

dard microprocessor write timings. Register contents

serve as input to an internal state-machine that con-

trols the erase and programming circuitry. Write cycles

also internally latch addresses and data needed for the

programming and erase operations. Reading data out

of the device is similar to reading from other Flash or

EPROM devices.

The system can place the device into the standby mode.

Power consumption is greatly reduced in this mode.

AMD’s Flash technology combines years of Flash

memory manufacturing experience to produce the

highest levels of quality, reliability and cost effectiveness.

The device electrically erases all bits within a sector

simultaneously via Fowler-Nordheim tunneling. The

data is programmed using hot electron injection.

Device programming occurs by executing the program

command sequence. This initiates the Embedded

Program algorithm—an internal algorithm that auto-

matically times the program pulse widths and verifies

proper cell margin.

Electrical Specifications

Refer to the Am29F400B data sheet, document

number 21505, for full electrical specifications on the

Am29F400B in KGD form.

Device erasure occurs by executing the erase com-

mand sequence. This initiates the Embedded Erase

algorithm—an internal algorithm that automatically

Am29F400B Known Good Die

S U P P L E M E N T

PRODUCT SELECTOR GUIDE

Family Part Number

Am29F400B KGD

= 5.0 V ± 5%

-75

Speed Option

= 5.0 V ± 10%

-90

-120

120

Max access time, ns (t

)

ACC

Max CE# access time, ns (t

)

Max OE# access time, ns (t

)

DIE PHOTOGRAPH

DIE PAD LOCATIONS

1 43 42 41 40 39 38 37 36 35

AMD logo location

13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31

Am29F400B Known Good Die

S U P P L E M E N T

Pad Center (mils)

PAD DESCRIPTION

Pad Center (millimeters)

Pad

Signal

0.00

0.0000

0.1745

0.3246

0.4729

0.6231

0.7714

0.9218

1.0698

1.2202

1.4143

1.4600

1.4511

1.3028

1.1651

1.0170

0.8791

0.7310

0.5933

0.4427

0.3048

0.0615

–0.2411

–0.6218

–0.7701

–0.9078

–1.0559

–1.1938

–1.3419

–1.4796

–1.6279

–1.6368

–1.3955

–1.2030

–1.0528

–0.9045

–0.7541

–0.6061

–0.4557

–0.3076

–0.1572

0.0000

–0.0343

0.1651

0.4582

4.3691

4.3627

4.3691

4.4648

4.3691

0.4582

0.1651

–0.0962

–0.0576

0.0000

DQ4

DQ12

DQ5

6.87

0.00

12.78

18.62

24.53

30.37

36.29

42.12

48.04

55.68

57.48

57.13

51.29

45.87

40.04

34.61

28.78

23.36

17.43

12.00

2.42

0.00

DQ13

DQ6

0.00

DQ14

DQ7

0.00

DQ15/A-1

0.00

–1.35

6.50

BYTE#

A16

A15

A14

A13

A12

A11

A10

18.04

172.01

171.76

172.01

175.78

172.01

18.04

6.50

WE#

RESET#

RY/BY#

A17

–9.49

–24.48

–30.32

–35.74

–41.57

–47.00

–52.83

–58.25

–64.09

–64.44

–54.94

–47.36

–41.45

–35.61

–29.69

–23.86

–17.94

–12.11

–6.19

CE#

–3.79

–2.27

0.00

OE#

DQ0

DQ8

DQ1

DQ9

DQ2

DQ10

DQ3

DQ11

0.00

Note: The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment.

Am29F400B Known Good Die

S U P P L E M E N T

ORDERING INFORMATION

Standard Products

AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is

formed by a combination of the following:

-75

AM29F400B

DIE REVISION

This number refers to the specific AMD manufacturing

process and product technology reflected in this

document. It is entered in the revision field of AMD

standard product nomenclature.

TEMPERATURE RANGE

C = Commercial (0°C to +70°C)

= Industrial (–40°C to +85°C)

E = Extended (–55°C to +125°C)

PACKAGE TYPE AND

MINIMUM ORDER QUANTITY

Waffle Pack

140 die per 5 tray stack

DG = Gel-Pak Die Tray

594 die per 6 tray stack

Surftape™ (Tape and Reel)

2500 per 7-inch reel

DW = Gel-Pak Wafer Tray (sawn wafer on frame)

Call AMD sales office for minimum order

quantity

SPEED OPTION

See Valid Combinations

BOOT CODE SECTOR ARCHITECTURE

T = Top sector

B = Bottom sector

DEVICE NUMBER/DESCRIPTION

Am29F400B Known Good Die

4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS Flash Memory—Die Revision 1

5.0 Volt-only Program and Erase

Valid Combinations

Valid Combinations list configurations planned to be sup-

ported in volume for this device. Consult the local AMD sales

office to confirm availability of specific valid combinations and

AM29F400BT-75

AM29F400BB-75

DPC 1, DPI 1, DPE 1,

DGC 1, DGI 1, DGE 1,

to check on newly released combinations.

AM29F400BT-90

AM29F400BB-90

DTC 1, DTI 1, DTE 1,

DWC 1, DWI 1, DWE 1

AM29F400BT-120

AM29F400BB-120

Am29F400B Known Good Die

S U P P L E M E N T

PACKAGING INFORMATION

Surftape Packaging

Direction of Feed

Orientation relative to

leading edge of tape

and reel

AMD logo location

Gel-Pak and Waffle Pack Packaging

Orientation relative to

top left corner of

Gel-Pak

and Waffle Pack

cavity plate

AMD logo location

Am29F400B Known Good Die

S U P P L E M E N T

PRODUCT TEST FLOW

Figure 1 provides an overview of AMD’s Known Good

Die test flow. For more detailed information, refer to the

Am29F400B product qualification database supple-

ment for KGD. AMD implements quality assurance pro-

cedures throughout the product test flow. In addition,

an off-line quality monitoring program (QMP) further

guarantees AMD quality standards are met on Known

Good Die products. These QA procedures also allow

AMD to produce KGD products without requiring or

implementing burn-in.

DC Parameters

Functionality

Programmability

Erasability

Wafer Sort 1

Data Retention

Bake

24 hours at 250°C

DC Parameters

Functionality

Programmability

Erasability

Wafer Sort 2

DC Parameters

Functionality

Programmability

Erasability

Wafer Sort 3

High Temperature

Speed

Incoming Inspection

Wafer Saw

Die Separation

100% Visual Inspection

Die Pack

Packaging for Shipment

Shipment

Figure 1. AMD KGD Product Test Flow

Am29F400B Known Good Die

S U P P L E M E N T

PHYSICAL SPECIFICATIONS

MANUFACTURING INFORMATION

Die Dimensions . . . . . . . . . . . . . . 135 mils x 198 mils

. . . . . . . . . . . . . . . . . . . . . . . . . . .3.42 mm x 5.02 mm

Manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . . FASL

Test . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SDC

Die Thickness. . . . . . . . . . . . . . . . . ~500 µm/~20 mils

Manufacturing ID (Top Boot) . . . . . . . . . . . .98F02AK

(Bottom Boot) . . . . . . . 98F02ABK

Bond Pad Size . . . . . . . . . . . . . . 4.69 mils x 4.69 mils

. . . . . . . . . . . . . . . . . . . . . . . . . .115.9 µm x 115.9 µm

Preparation for Shipment . . . . . . . . Penang, Malaysia

Fabrication Process . . . . . . . . . . . . . . . . . . . . CS39S

Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Pad Area Free of Passivation . . . . . . . . . 13.98 mils

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9,025 µm

Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .43

Bond Pad Metallization . . . . . . . . . . . . . . . . . . . Al/Cu

SPECIAL HANDLING INSTRUCTIONS

Processing

Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal,

. . . . . . . . . . . . . . . . . . . . may be grounded (optional)

Do not expose KGD products to ultraviolet light or

process them at temperatures greater than 250°C.

Failure to adhere to these handling instructions will

result in irreparable damage to the devices. For best

yield, AMD recommends assembly in a Class 10K

clean room with 30% to 60% relative humidity.

Passivation. . . . . . . . . . . . . . . . . . . . . . SiN/SOG/SiN

DC OPERATING CONDITIONS

(Supply Voltage) . . . . . . . . . . . . . . .4.5 V to 5.5 V

Junction Temperature Under Bias . .T (max) = 130°C

Storage

Operating Temperature

Store at a maximum temperature of 30°C in a nitrogen-

purged cabinet or vacuum-sealed bag. Observe all

standard ESD handling procedures.

Commercial . . . . . . . . . . . . . . . . . . . 0°C to +70°C

Industrial . . . . . . . . . . . . . . . . . . . –40°C to +85°C

Extended . . . . . . . . . . . . . . . . . . –55°C to +125°C

Am29F400B Known Good Die

S U P P L E M E N T

WITHOUT LIMITING THE FOREGOING, EXCEPT TO

TERMS AND CONDITIONS OF SALE FOR

AMD NON-VOLATILE MEMORY DIE

THE EXTENT THAT AMD EXPRESSLY WARRANTS

TO BUYER IN A SEPARATE AGREEMENT SIGNED

BY AMD, AMD MAKES NO WARRANTY WITH

RESPECT TO THE DIE’S PROCESSING OF DATE

DATA, AND SHALL HAVE NO LIABILITY FOR

DAMAGES OF ANY KIND, UNDER EQUITY, LAW, OR

ANY OTHER THEORY, DUE TO THE FAILURE OF

SUCH KNOWN GOOD DIE TO PROCESS ANY PAR-

TICULAR DATA CONTAINING DATES, INCLUDING

DATES IN AND AFTER THE YEAR 2000, WHETHER

OR NOT AMD RECEIVED NOTICE OF THE POSSI-

BILITY OF SUCH DAMAGES.

All transactions relating to unpackaged die under this

agreement shall be subject to AMD’s standard terms

and conditions of sale, or any revisions thereof, which

revisions AMD reserves the right to make at any time

and from time to time. In the event of conflict between

the provisions of AMD’s standard terms and conditions

of sale and this agreement, the terms of this agreement

shall be controlling.

AMD warrants unpackaged die of its manufacture

(“Known Good Die” or “Die”) against defective mate-

rials or workmanship for a period of one (1) year from

date of shipment. This warranty does not extend

beyond the first purchaser of said Die. Buyer assumes

full responsibility to ensure compliance with the

appropriate handling, assembly and processing of

Known Good Die (including but not limited to proper

Die preparation, Die attach, wire bonding and related

assembly and test activities), and compliance with all

guidelines set forth in AMD’s specifications for Known

Good Die, and AMD assumes no responsibility for envi-

ronmental effects on Known Good Die or for any

activity of Buyer or a third party that damages the Die

due to improper use, abuse, negligence, improper

installation, accident, loss, damage in transit, or unau-

thorized repair or alteration by a person or entity other

than AMD (“Warranty Exclusions”).

THIS WARRANTY IS EXPRESSED IN LIEU OF ALL

OTHER WARRANTIES, EXPRESSED OR IMPLIED,

INCLUDING THE IMPLIED WARRANTY OF FITNESS

FOR A PARTICULAR PURPOSE, THE IMPLIED

WARRANTY OF MERCHANTABILITY AND OF ALL

OTHER OBLIGATIONS OR LIABILITIES ON AMD’s

PART, AND IT NEITHER ASSUMES NOR AUTHO-

RIZES ANY OTHER PERSON TO ASSUME FOR

AMD ANY OTHER LIABILITIES. THE FOREGOING

CONSTITUTES THE BUYER’S SOLE AND EXCLU-

SIVE REMEDY FOR THE FURNISHING OF DEFEC-

TIVE OR NON CONFORMING KNOWN GOOD DIE

AND AMD SHALL NOT IN ANY EVENT BE LIABLE

FOR INCREASED MANUFACTURING COSTS,

DOWNTIME COSTS, DAMAGES RELATING TO

BUYER’S PROCUREMENT OF SUBSTITUTE DIE

(i.e., “COST OF COVER”), LOSS OF PROFITS, REV-

ENUES OR GOODWILL, LOSS OF USE OF OR

DAMAGE TO ANY ASSOCIATED EQUIPMENT, OR

ANY OTHER INDIRECT, INCIDENTAL, SPECIAL

OR CONSEQUENTIAL DAMAGES BY REASON OF

THE FACT THAT SUCH KNOWN GOOD DIE SHALL

HAVE BEEN DETERMINED TO BE DEFECTIVE OR

NON CONFORMING.

The liability of AMD under this warranty is limited, at

AMD’s option, solely to repair the Die, to send replace-

ment Die, or to make an appropriate credit adjustment

or refund in an amount not to exceed the original pur-

chase price actually paid for the Die returned to AMD,

provided that: (a) AMD is promptly notified by Buyer in

writing during the applicable warranty period of any

defect or nonconformity in the Known Good Die; (b)

Buyer obtains authorization from AMD to return the

defective Die; (c) the defective Die is returned to AMD

by Buyer in accordance with AMD’s shipping instruc-

tions set forth below; and (d) Buyer shows to AMD’s

satisfaction that such alleged defect or nonconformity

actually exists and was not caused by any of the above-

referenced Warranty Exclusions. Buyer shall ship such

defective Die to AMD via AMD’s carrier, collect. Risk of

loss will transfer to AMD when the defective Die is pro-

vided to AMD’s carrier. If Buyer fails to adhere to these

warranty returns guidelines, Buyer shall assume all risk

of loss and shall pay for all freight to AMD’s specified

location. The aforementioned provisions do not extend

the original warranty period of any Known Good Die

that has either been repaired or replaced by AMD.

Buyer agrees that it will make no warranty representa-

tions to its customers which exceed those given by

AMD to Buyer unless and until Buyer shall agree to

indemnify AMD in writing for any claims which exceed

AMD’s warranty.

Known Good Die are not designed or authorized for

use as components in life support appliances, devices

or systems where malfunction of the Die can reason-

ably be expected to result in a personal injury. Buyer’s

use of Known Good Die for use in life support applica-

tions is at Buyer’s own risk and Buyer agrees to fully

indemnify AMD for any damages resulting in such use

or sale.

Am29F400B Known Good Die

S U P P L E M E N T

Manufacturing Information

REVISION SUMMARY

Revision B

Manufacturing ID: Changed to 98F02AK (top boot) and

98F02ABK (bottom boot) from 98965AK (top boot) and

98965ABK (bottom boot).

Formatted to match current template. Updated Distinc-

tive Characteristics and General Description sections

using the current main data sheet. Updated for CS39

process technology.

Fabrication Process: Changed to CS39S from CS39.

Die Revision: Changed to 2 from 1.

Revision B+1

Revision C+1

Distinctive Characteristics

Page 5, Ordering Information

The minimum guarantee per sector is now 1 million cycles.

Package Type and Minimum Order Quantity: Changed

Waffle Pack to 140 die per 5 tray stack from 180 die per

5 tray stack. Changed Gel-Pak Die Tray to 594 die per

6 tray stack from 378 die per 6 tray stack. Changed Sur-

ftape™ (Tape and Reel) to 2500 per 7-inch reel from

1800 per 7-inch reel.

Global

Added -75 and -90 speed options.

Pad Description

Corrected coordinates for pads 2, 19, 22, 35, 40, and 42.

Page 7, Physical Specifications

Physical Specifications

Die Dimensions: Changed to 3.42 mm x 5.02 mm from

3.43 mm x 5.03 mm.

Changed die thickness specification to ~20 mils.

Revision B+2

Bond Pad Size: Changed to 4.7 mils x 4.7 mils and

119.7 µm x 119.7 µm from 3.74 mils x 3.74 mils and

95 µm x 95 µm.

Die Pad Locations

Moved AMD logo to above pad 23.

Pad Area Free of Passivation: Changed to 13.98 mils

Revision C

and 9,025 um from 20.85 mils and 13,433 µm .

Bond Pad Metallization: Changed to Al/Cu from Al/Cu/Si.

Page 7, Manufacturing Information

Distinctive Characteristics

Changed “Manufactured on 0.35 µm process technology”

to “Manufactured on 0.32 µm process technology”.

Manufacturing ID (Top Boot): Changed to 98F02AK

from 98F02A.

General Description

Third paragraph: Changed “AMD’s 0.35 µm process

technology” to “AMD’s 0.32 µm process technology”.

Revision D

Die Photograph

Global

Replaced with photograph of Die Revision 2.

Revised document specifications for die shrink from

0.35 µm to 0.32 µm process technology.

Die Pad Locations

Terms and Conditions

Corrected the location of the AMD logo to above pad 22

from pad above pad 13. Modified figure to match new

die photograph.

Replaced warranty with new version.

Revision E (December 1998)

Pad Description

Packaging Information

Replaced table with new pad coordinates.

Added section. Moved orientation information from die

photograph section into this section.

Physical Specifications

Die Dimensions: Changed to 135 mils x 198 mils, 3.43

mm x 5.03 mm from 141.34 mils x 207.48 mils, 3.59

mm x 5.27 mm.

Revision E+1 (February 1999)

Die Pad Locations

Corrected top row of pad callouts.

Die Thickness: Added ~500 µm.

Revision E+2 (June 14, 1999)

Physical Specifications

Pad Area Free of Passivation: Changed to 20.85 mils

and 13,433 µm from 15.52 mils and 10,000 µm .

Corrected the bond pad dimensions.

Passivation: Changed to SiN/SOG/SiN from Nitride/

SOG/Nitride.

Am29F400B Known Good Die

S U P P L E M E N T

Trademarks

AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.

Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.

Am29F400B Known Good Die

AM29F400BB-90DPF1 [SPANSION]

相关型号：

SI9130DB

SI9135LG-T1

SI9135LG-T1-E3

SI9135_11

SI9136_11

SI9130CG-T1-E3

SI9130LG-T1-E3

SI9130_11

SI9137

SI9137DB

SI9137LG

SI9122E