AM29LV160MB-120WCF_技术文档

ADVANCE INFORMATION

Am29LV160M

16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit^TM

3.0 Volt-only Boot Sector Flash Memory

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

■ Embedded Algorithms

— Full voltage range: 2.7 to 3.6 volt read and write

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

operations for battery-powered applications

— Regulated voltage range: 3.0 to 3.6 volt read and

write operations and for compatibility with high

performance 3.3 volt microprocessors

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

TM

■ Manufactured on 0.23 µm MirrorBit process

■ Minimum 1,000,000 write cycle guarantee

technology

per sector

— Fully compatible with Am29LV160D device

■ 20-year data retention at 125°C

— Reliable operation for the life of the system

■ Package option

■ High performance

— Access times as fast as 70 ns

— 48-ball FBGA

■ Ultra low power consumption (typical values at

5 MHz)

— 48-pin TSOP

— 400 nA Automatic Sleep mode current

— 400 nA standby mode current

— 15 mA read current

— 44-pin SO

— 64-ball Fortified BGA

■ CFI (Common Flash Interface) compliant

— 40 mA program/erase current

— Provides device-specific information to the

system, allowing host software to easily

reconfigure for different Flash devices

■ Flexible sector architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

thirty-one 64 Kbyte sectors (byte mode)

■ Compatibility with JEDEC standards

— One 8 Kword, two 4 Kword, one 16 Kword, and

— Pinout and software compatible with single-

thirty-one 32 Kword sectors (word mode)

power supply Flash

— Supports full chip erase

— Superior inadvertent write protection

■ Data# Polling and toggle bits

— Sector Protection features:

A hardware method of locking a sector to prevent

any program or erase operations within that sector

— Provides a software method of detecting program

or erase operation completion

Sectors can be locked in-system or via

programming equipment

■ Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting

program or erase cycle completion (not available

on 44-pin SO)

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

■ Unlock Bypass Program Command

■ Erase Suspend/Erase Resume

— Reduces overall programming time when issuing

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

multiple program command sequences

■ Top or bottom boot block configurations

available

■ Hardware reset pin (RESET#)

— Hardware method to reset the device to reading

array data

This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

Publication# 25974

Issue Date: July 3, 2002

Rev: A Amendment/1

GENERAL DESCRIPTION

The Am29LV160M is a 16 Mbit, 3.0 Volt-only Flash

memory organized as 2,097,152 bytes or 1,048,576

words. The device is offered in 48-ball FBGA, 44-pin

SO, and 48-pin TSOP packages. The word-wide data

(x16) appears on DQ15–DQ0; the byte-wide (x8) data

appears on DQ7–DQ0. This device is designed to be

programmed in-system with the standard system 3.0

The host system can detect whether a program or

erase operation is complete by observing the RY/BY#

pin, or by reading the DQ7 (Data# Polling) and DQ6

(toggle) status bits. After a program or erase cycle

has been completed, the device is ready to read array

data or accept another command.

The sector erase architecture allows memory sectors

to be erased and reprogrammed without affecting the

data contents of other sectors. The device is fully

erased when shipped from the factory.

volt V

supply. A 12.0 V V

or 5.0 V

are not

CC

PP

CC

required for write or erase operations. The device can

also be programmed in standard

EPROM programmers.

Hardware data protection measures include a low

The device offers access times of 70, 90, and 120 ns,

allowing high speed microprocessors to operate

without wait states. To eliminate bus contention the

device has separate chip enable (CE#), write enable

(WE#) and output enable (OE#) controls.

V

detector that automatically inhibits write opera-

CC

tions during power transitions. The hardware sector

protection feature disables both program and erase

operations in any combination of the sectors of

memory. This can be achieved in-system or via pro-

gramming equipment.

The device requires only a single 3.0 volt power

supply for both read and write functions. Internally

generated and regulated voltages are provided for the

program and erase operations.

The Erase Suspend/Erase Resume feature enables

the user to put erase on hold for any period of time to

read data from, or program data to, any sector that is

not selected for erasure. True background erase can

thus be achieved.

The Am29LV160M is entirely command set compatible

with the JEDEC single-power-supply Flash stan-

dard. Commands are written to the command register

using standard microprocessor write timings. Register

contents serve as input to an internal state-machine

that controls the erase and programming circuitry.

Write cycles also internally latch addresses and data

needed for the programming and erase operations.

Reading data out of the device is similar to reading

from other Flash or EPROM devices.

The hardware RESET# pin terminates any operation

in progress and resets the internal state machine to

reading array data. The RESET# pin may be tied to the

system reset circuitry. A system reset would thus also

reset the device, enabling the system microprocessor

to read the boot-up firmware from the Flash memory.

The device offers two power-saving features. When

addresses have been stable for a specified amount of

time, the device enters the automatic sleep mode.

The system can also place the device into the standby

mode. Power consumption is greatly reduced in both

these modes.

Device programming occurs by executing the program

command sequence. This initiates the Embedded

Program algorithm—an internal algorithm that auto-

matically times the program pulse widths and verifies

proper cell margin. The Unlock Bypass mode facili-

tates faster programming times by requiring only two

write cycles to program data instead of four.

AMD’s Flash technology combines years of Flash

memory manufacturing experience to produce the

highest levels of quality, reliability and cost effective-

ness. The device electrically erases all bits within a

sector simultaneously via Fowler-Nordheim tun-

neling. The data is programmed using hot electron

injection.

Device erasure occurs by executing the erase

command sequence. This initiates the Embedded

Erase algorithm—an internal algorithm that automati-

cally preprograms the array (if it is not already pro-

grammed) before executing the erase operation.

During erase, the device automatically times the erase

pulse widths and verifies proper cell margin.

2

Am29LV160M

TABLE OF CONTENTS

Product Selector Guide . . . . . . . . . . . . . . . . . . . . .4

Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . .5

Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . .8

Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Ordering Information . . . . . . . . . . . . . . . . . . . . . . .9

Device Bus Operations . . . . . . . . . . . . . . . . . . . . .10

Table 1. Am29LV160M Device Bus Operations ..............................10

Word/Byte Configuration ........................................................10

Requirements for Reading Array Data ...................................10

Writing Commands/Command Sequences ............................11

Program and Erase Operation Status .................................... 11

Standby Mode ........................................................................ 11

Automatic Sleep Mode ...........................................................11

RESET#: Hardware Reset Pin ...............................................12

Output Disable Mode .............................................................. 12

Table 2. Sector Address Tables (Am29LV160MT) .........................13

Table 3. Sector Address Tables (Am29LV160MB) .........................14

Autoselect Mode .....................................................................15

Table 4. Am29LV160M Autoselect Codes (High Voltage Method) .15

Sector Protection/Unprotection ...............................................15

Temporary Sector Unprotect ..................................................16

Figure 1. Temporary Sector Unprotect Operation........................... 16

Figure 2. In-System Single High Voltage Sector Protect/Unprotect Al-

gorithms .......................................................................................... 17

Common Flash Memory Interface (CFI) . . . . . . .18

Table 5. CFI Query Identification String ..........................................18

Table 6. System Interface String .....................................................18

Table 7. Device Geometry Definition ..............................................19

Table 8. Primary Vendor-Specific Extended Query ........................19

Hardware Data Protection ......................................................20

RY/BY#: Ready/Busy# ............................................................ 27

DQ6: Toggle Bit I ....................................................................27

DQ2: Toggle Bit II ................................................................... 27

Reading Toggle Bits DQ6/DQ2 ...............................................27

Figure 6. Toggle Bit Algorithm........................................................ 28

DQ3: Sector Erase Timer ....................................................... 29

Table 10. Write Operation Status ................................................... 29

Absolute Maximum Ratings . . . . . . . . . . . . . . . . 30

Figure 7. Maximum Negative Overshoot Waveform ...................... 30

Figure 8. Maximum Positive Overshoot Waveform........................ 30

Operating Ranges. . . . . . . . . . . . . . . . . . . . . . . . . 30

DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 31

Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 33

Figure 9. Test Setup....................................................................... 33

Table 11. Test Specifications ......................................................... 33

Figure 10. Input Waveforms and Measurement Levels ................. 33

AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 34

Read Operations ....................................................................34

Figure 11. Read Operations Timings ............................................. 34

Hardware Reset (RESET#) .................................................... 35

Figure 12. RESET# Timings .......................................................... 35

Word/Byte Configuration (BYTE#) ........................................36

Figure 13. BYTE# Timings for Read Operations............................ 36

Figure 14. BYTE# Timings for Write Operations............................ 36

Erase/Program Operations .....................................................37

Figure 15. Program Operation Timings.......................................... 38

Figure 16. Chip/Sector Erase Operation Timings .......................... 39

Figure 17. Data# Polling Timings (During Embedded Algorithms). 40

Figure 18. Toggle Bit Timings (During Embedded Algorithms)...... 40

Figure 19. DQ2 vs. DQ6 for Erase and

Erase Suspend Operations ............................................................ 41

Figure 20. Temporary Sector Unprotect/Timing Diagram .............. 41

Figure 21. Sector Protect/Unprotect Timing Diagram .................... 42

Figure 22. Alternate CE# Controlled Write Operation Timings ...... 44

Erase and Programming Performance . . . . . . . 45

Latchup Characteristics. . . . . . . . . . . . . . . . . . . . 45

TSOP and SO Pin Capacitance . . . . . . . . . . . . . . 45

Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 45

Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 46

TS 048—48-Pin Standard TSOP ............................................46

TSR048—48-Pin Reverse TSOP ........................................... 47

FBC048—48-Ball Fine-Pitch Ball Grid Array (FBGA)

Low V Write Inhibit .............................................................. 20

CC

Write Pulse “Glitch” Protection ...............................................20

Logical Inhibit .......................................................................... 20

Power-Up Write Inhibit ............................................................ 20

Command Definitions . . . . . . . . . . . . . . . . . . . . . .21

Reading Array Data ................................................................21

Reset Command .....................................................................21

Autoselect Command Sequence ............................................21

Word/Byte Program Command Sequence ............................. 21

Unlock Bypass Command Sequence .....................................22

Figure 3. Program Operation .......................................................... 22

Chip Erase Command Sequence ........................................... 22

Sector Erase Command Sequence ........................................23

Erase Suspend/Erase Resume Commands ........................... 23

Figure 4. Erase Operation............................................................... 24

Command Definitions .............................................................25

Table 9. Am29LV160M Command Definitions ................................25

Write Operation Status . . . . . . . . . . . . . . . . . . . . .26

DQ7: Data# Polling ................................................................. 26

Figure 5. Data# Polling Algorithm ................................................... 26

8 x 9 mm ................................................................................48

SO 044—44-Pin Small Outline Package ................................49

LAA064—64-Ball Fortified Ball Grid Array (FBGA) 13 x 11 mm

Package ..................................................................................50

Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 51

Revision A (June 24, 2002) .................................................... 51

Revision A + 1 (July 3, 2002) .................................................. 51

Am29LV160M

3

PRODUCT SELECTOR GUIDE

Family Part Number

Am29LV160M

Speed Option

Voltage Range: V = 2.7–3.6 V

-70

70

30

-90

90

35

-120

120

50

CC

Max access time, ns (t

)

ACC

Max CE# access time, ns (t

)

CE

Max OE# access time, ns (t

)

OE

Note: See “AC Characteristics” for full specifications.

BLOCK DIAGRAM

DQ0–DQ15 (A-1)

RY/BY#

V

CC

Sector Switches

V

SS

Erase Voltage

Generator

Input/Output

Buffers

RESET#

State

Control

WE#

BYTE#

Command

Register

PGM Voltage

Generator

Data

Latch

Chip Enable

Output Enable

Logic

STB

CE#

OE#

Y-Decoder

Y-Gating

STB

V

Detector

Timer

CC

Cell Matrix

X-Decoder

A0–A19

4

Am29LV160M

CONNECTION DIAGRAMS

A15

A14

A13

A12

A11

A10

A9

A8

A19

NC

1

2

3

4

5

6

7

8

48

47

46

45

44

43

42

41

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

A16

BYTE#

V_SS

DQ15/A-1

DQ7

DQ14

DQ6

DQ13

DQ5

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

DQ12

DQ4

V_CC

WE#

RESET#

NC

Standard TSOP

DQ11

DQ3

DQ10

DQ2

DQ9

DQ1

DQ8

DQ0

OE#

V_SS

CE#

A0

NC

RY/BY#

A18

A17

A7

A6

A5

A4

A3

A2

A1

1

2

3

4

5

6

7

8

9

A15

A14

A13

A12

A11

A10

A9

A8

A19

NC

48

A16

47

46

45

44

43

42

41

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

BYTE#

V_SS

DQ15/A-1

DQ7

DQ14

DQ6

DQ13

DQ5

DQ12

DQ4

V_CC

DQ11

DQ3

DQ10

DQ2

DQ9

DQ1

DQ8

DQ0

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

WE#

RESET#

NC

Reverse TSOP

NC

RY/BY#

A18

A17

A7

A6

A5

A4

A3

A2

A1

OE#

V_SS

CE#

A0

Am29LV160M

5

CONNECTION DIAGRAMS

RESET#

A18

A17

A7

1

2

3

4

5

6

7

8

9

44 WE#

43 A19

42 A8

41 A9

A6

40 A10

39 A11

38 A12

37 A13

36 A14

35 A15

34 A16

33 BYTE#

32 V_SS

A5

A4

A3

A2

A1 10

A0 11

CE# 12

V_SS13

SO

OE# 14

DQ0 15

DQ8 16

DQ1 17

DQ9 18

DQ2 19

DQ10 20

DQ3 21

DQ11 22

31 DQ15/A-1

30 DQ7

29 DQ14

28 DQ6

27 DQ13

26 DQ5

25 DQ12

24 DQ4

23 V_CC

FBGA

Top View, Balls Facing Down

A6

B6

C6

D6

E6

F6

G6

H6

A13

A12

A14

A15

A16

BYTE# DQ15/A-1 V_SS

A5

A9

B5

A8

C5

D5

E5

F5

G5

H5

A10

A11

DQ7

DQ14

DQ13

DQ6

A4

B4

C4

D4

E4

F4

G4

H4

WE# RESET#

NC

A19

DQ5

DQ12

V_CC

DQ4

A3

B3

C3

D3

E3

F3

G3

H3

RY/BY#

NC

A18

NC

DQ2

DQ10

DQ11

DQ3

A2

A7

B2

C2

A6

D2

A5

E2

F2

G2

H2

A17

DQ0

DQ8

DQ9

DQ1

A1

A3

B1

A4

C1

A2

D1

A1

E1

A0

F1

G1

H1

CE#

OE#

V_SS

Flash memory devices in FBGA packages may be

damaged if exposed to ultrasonic cleaning methods.

The package and/or data integrity may be compromised

if the package body is exposed to temperatures above

150°C for prolonged periods of time.

Special Handling Instructions

Special handling is required for Flash Memory products

in FBGA packages.

6

Am29LV160M

CONNECTION DIAGRAMS

64-Ball Fortified BGA (FBGA)

A8

B8

C8

D8

E8

F8

G8

NC

H8

NC

V_IO

V_SS

NC

A7

B7

C7

D7

E7

F7

G7

H7

A13

A12

A14

A15

A16

BYTE# DQ15/A-1 V_SS

A6

A9

B6

A8

C6

D6

E6

F6

G6

H6

DQ6

A10

A11

DQ7

DQ14

DQ13

A5

B5

C5

D5

E5

F5

G5

H5

WE# RESET#

A21

A19

DQ5

DQ12

V_CC

DQ4

A4 B4

C4

D4

E4

F4

G4

H4

RY/BY# WP#/ACC A18

A20

DQ2

DQ10

DQ11

DQ3

A3

A7

B3

C3

A6

D3

A5

E3

F3

G3

H3

A17

DQ0

DQ8

DQ9

DQ1

A2

A3

B2

A4

C2

A2

D2

A1

E2

A0

F2

G2

H2

CE#

OE#

V_SS

A1

B1

C1

D1

E1

F1

G1

NC

H1

NC

V_IO

NC

temperatures above 150°C for prolonged periods of

time.

Special Package Handling Instructions

Special handling is required for Flash Memory products

in molded packages (TSOP, BGA, SSOP, PDIP,

PLCC). The package and/or data integrity may be

compromised if the package body is exposed to

Am29LV160M

7

PIN CONFIGURATION

LOGIC SYMBOL

A0–A19

= 20 addresses

20

DQ0–DQ14 = 15 data inputs/outputs

A0–A19

16 or 8

DQ15/A-1

=

DQ15 (data input/output, word mode),

A-1 (LSB address input, byte mode)

DQ0–DQ15

(A-1)

BYTE#

CE#

=

Selects 8-bit or 16-bit mode

Chip enable

CE#

OE#

Output enable

WE#

Write enable

WE#

RESET#

RY/BY#

Hardware reset pin

RESET#

BYTE#

Ready/Busy output

(N/A SO 044)

RY/BY#

(N/A SO 044)

V

=

3.0 volt-only single power supply

CC

(see Product Selector Guide for speed

options and voltage supply tolerances)

V

=

Device ground

SS

NC

Pin not connected internally

8

Am29LV160M

ORDERING INFORMATION

Standard Products

AMD standard products are available in several packages and operating ranges. The order number (Valid Combi-

nation) is formed by a combination of the elements below.

Am29LV160M

T

-70

E

C

TEMPERATURE RANGE

C

I

=

Commercial (0°C to +70°C)

Industrial (–40°C to +85°C)

Extended (–55°C to +125°C)

E

PACKAGE TYPE

E

=

48-Pin Thin Small Outline Package (TSOP) Standard Pinout (TS 048)

48-Pin Thin Small Outline Package (TSOP) Reverse Pinout (TSR048)

44-Pin Small Outline Package (SO 044)

F

S

WC

48-ball Fine-Pitch Ball Grid Array (FBGA)

0.80 mm pitch, 8 x 9 mm package (FBC048)

PC

=

64-ball Fortified Ball Grid Array (FBGA)

1.0 mm pitch, 13 x 11 mm package (LAA064)

SPEED OPTION

See Product Selector Guide and Valid Combinations

BOOT CODE SECTOR ARCHITECTURE

T

B

=

Top sector

Bottom sector

DEVICE NUMBER/DESCRIPTION

Am29LV160M

16 Megabit (2M x 8-Bit/1M x 16-Bit) MirrorBit^TMFlash Memory

3.0 Volt-only Read, Program, and Erase

Valid Combinations For TSOP and SO Packages

Valid Combinations for FBGA Packages

Order Number Package Marking

Am29LV160MT-70,

Am29LV160MB-70

L160MT70V,

L160MB70V

EC, EI, EE,

FC, FI, FE,

SC, SI, SE

Am29LV160MT-90,

Am29LV160MB-90

Am29LV160MB-70

WCC,

Am29LV160MT-90,

Am29LV160MB-90

WCI, L160MT90V,

WCE, L160MB90V

C, I, E

Am29LV160MT-120,

Am29LV160MB-120

PCI

Am29LV160MT-120,

Am29LV160MB-120

L160MT12V,

L160MB12V

Valid Combinations

Valid Combinations list configurations planned to be sup-

ported in volume for this device. Consult the local AMD sales

office to confirm availability of specific valid combinations and

to check on newly released combinations.

Am29LV160M

9

DEVICE BUS OPERATIONS

This section describes the requirements and use of the

device bus operations, which are initiated through the

internal command register. The command register itself

does not occupy any addressable memory location.

The register is composed of latches that store the com-

mands, along with the address and data information

needed to execute the command. The contents of the

register serve as inputs to the internal state machine.

The state machine outputs dictate the function of the

device. Table 1 lists the device bus operations, the in-

puts and control levels they require, and the resulting

output. The following subsections describe each of

these operations in further detail.

Table 1. Am29LV160M Device Bus Operations

DQ8–DQ15

BYTE#

= V

Addresses

(Note 1)

DQ0– BYTE#

Operation

CE# OE# WE# RESET#

DQ7

= V

IH

IL

Read

Write

L

H

L

H

A

D

DQ8–DQ14 = High-Z,

IN

OUT

DQ15 = A-1

H

A

D

IN

V

0.3 V

±

V

0.3 V

±

CC

Standby

X

High-Z High-Z

High-Z

Output Disable

Reset

L

H

X

H

X

H

L

X

High-Z High-Z

High-Z

X

Sector Address,

A6 = L, A1 = H,

A0 = L

Sector Protect (Note 2)

L

H

L

V

D

X

ID

IN

Sector Address,

A6 = H, A1 = H,

A0 = L

Sector Unprotect (Note 2)

L

H

X

L

V

D

X

ID

IN

Temporary Sector

Unprotect

X

A

D

High-Z

IN

Legend:

L = Logic Low = V , H = Logic High = V , V = 12.0 ± 0.5 V, X = Don’t Care, A = Address In, D = Data In, D = Data Out

IL

IH

ID

IN

OUT

Notes:

1. Addresses are A19:A0 in word mode (BYTE# = V ), A19:A-1 in byte mode (BYTE# = V ).

IH

IL

2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector

Protection/Unprotection” section.

main at V . The BYTE# pin determines whether the de-

vice outputs array data in words or bytes.

Word/Byte Configuration

IH

The BYTE# pin controls whether the device data I/O

pins DQ15–DQ0 operate in the byte or word configura-

tion. If the BYTE# pin is set at logic ‘1’, the device is in

word configuration, DQ15–DQ0 are active and con-

trolled by CE# and OE#.

The internal state machine is set for reading array

data upon device power-up, or after a hardware reset.

This ensures that no spurious alteration of the mem-

ory content occurs during the power transition. No

command is necessary in this mode to obtain array

data. Standard microprocessor read cycles that as-

sert valid addresses on the device address inputs pro-

duce valid data on the device data outputs. The

device remains enabled for read access until the com-

mand register contents are altered.

If the BYTE# pin is set at logic ‘0’, the device is in byte

configuration, and only data I/O pins DQ0–DQ7 are ac-

tive and controlled by CE# and OE#. The data I/O pins

DQ8–DQ14 are tri-stated, and the DQ15 pin is used as

an input for the LSB (A-1) address function.

Requirements for Reading Array Data

See “Reading Array Data” for more information. Refer

to the AC Read Operations table for timing specifica-

To read array data from the outputs, the system must

tions and to Figure 11 for the timing diagram. I

in

CC1

drive the CE# and OE# pins to V . CE# is the power

IL

the DC Characteristics table represents the active cur-

rent specification for reading array data.

control and selects the device. OE# is the output control

and gates array data to the output pins. WE# should re-

10

Am29LV160M

bits on DQ7–DQ0. Standard read cycle timings and I

Writing Commands/Command Sequences

CC

read specifications apply. Refer to “Write Operation

Status” for more information, and to “AC Characteris-

tics” for timing diagrams.

To write a command or command sequence (which

includes programming data to the device and erasing

sectors of memory), the system must drive WE# and

CE# to V , and OE# to V .

IL

IH

Standby Mode

For program operations, the BYTE# pin determines

whether the device accepts program data in bytes or

words. Refer to “Word/Byte Configuration” for more

information.

When the system is not reading or writing to the device,

it can place the device in the standby mode. In this

mode, current consumption is greatly reduced, and the

outputs are placed in the high impedance state, inde-

pendent of the OE# input.

The device features an Unlock Bypass mode to facil-

itate faster programming. Once the device enters the

Unlock Bypass mode, only two write cycles are

required to program a word or byte, instead of four. The

“Word/Byte Program Command Sequence” section

has details on programming data to the device using

both standard and Unlock Bypass command

sequences.

The device enters the CMOS standby mode when the

CE# and RESET# pins are both held at V ± 0.3 V.

CC

(Note that this is a more restricted voltage range than

V .) If CE# and RESET# are held at V , but not within

IH

V

± 0.3 V, the device will be in the standby mode, but

CC

the standby current will be greater. The device requires

standard access time (t ) for read access when the

CE

device is in either of these standby modes, before it is

ready to read data.

An erase operation can erase one sector, multiple sec-

tors, or the entire device. Tables 2 and 3 indicate the

address space that each sector occupies. A “sector

address” consists of the address bits required to

uniquely select a sector. The “Command Definitions”

section has details on erasing a sector or the entire

chip, or suspending/resuming the erase operation.

If the device is deselected during erasure or program-

ming, the device draws active current until the

operation is completed.

In the DC Characteristics table, I

and I

repre-

CC4

CC3

sents the standby current specification.

After the system writes the autoselect command

sequence, the device enters the autoselect mode. The

system can then read autoselect codes from the

internal register (which is separate from the memory

array) on DQ7–DQ0. Standard read cycle timings

apply in this mode. Refer to the “Autoselect Mode” and

“Autoselect Command Sequence” sections for more

information.

Automatic Sleep Mode

The automatic sleep mode minimizes Flash device

energy consumption. The device automatically

enables this mode when addresses remain stable for

t

+ 30 ns. The automatic sleep mode is

ACC

independent of the CE#, WE#, and OE# control

signals. Standard address access timings provide new

data when addresses are changed. While in sleep

mode, output data is latched and always available to

I

in the DC Characteristics table represents the ac-

CC2

tive current specification for the write mode. The “AC

Characteristics” section contains timing specification

tables and timing diagrams for write operations.

the system. I

in the DC Characteristics table

CC4

represents the automatic sleep mode current

specification.

Program and Erase Operation Status

During an erase or program operation, the system may

check the status of the operation by reading the status

Am29LV160M

11

memory, enabling the system to read the boot-up firm-

ware from the Flash memory.

RESET#: Hardware Reset Pin

The RESET# pin provides a hardware method of reset-

ting the device to reading array data. When the system

If RESET# is asserted during a program or erase op-

eration, the RY/BY# pin remains a “0” (busy) until the

internal reset operation is complete, which requires a

drives the RESET# pin to V for at least a period of t

,

IL

RP

the device immediately terminates any operation in

progress, tristates all data output pins, and ignores all

read/write attempts for the duration of the RESET#

pulse. The device also resets the internal state ma-

chine to reading array data. The operation that was in-

terrupted should be reinitiated once the device is ready

to accept another command sequence, to ensure data

integrity.

time of t

(during Embedded Algorithms). The

READY

system can thus monitor RY/BY# to determine

whether the reset operation is complete. If RESET# is

asserted when a program or erase operation is not ex-

ecuting (RY/BY# pin is “1”), the reset operation is

completed within a time of t

(not during Embed-

READY

ded Algorithms). The system can read data t

after

RH

the RESET# pin returns to V .

IH

Current is reduced for the duration of the RESET#

pulse. When RESET# is held at V ±0.3 V, the device

Refer to the AC Characteristics tables for RESET# pa-

rameters and to Figure 12 for the timing diagram.

SS

draws CMOS standby current (I

). If RESET# is held

CC4

at V but not within V ±0.3 V, the standby current will

IL

SS

Output Disable Mode

be greater.

When the OE# input is at V , output from the device is

disabled. The output pins are placed in the high imped-

ance state.

The RESET# pin may be tied to the system reset cir-

cuitry. A system reset would thus also reset the Flash

IH

12

Am29LV160M

Table 2. Sector Address Tables (Am29LV160MT)

Sector Size

(Kbytes/

Address Range (in hexadecimal)

Sector A19 A18 A17 A16 A15 A14 A13 A12

Kwords)

Byte Mode (x8)

000000–00FFFF

010000–01FFFF

020000–02FFFF

030000–03FFFF

040000–04FFFF

050000–05FFFF

060000–06FFFF

070000–07FFFF

080000–08FFFF

090000–09FFFF

0A0000–0AFFFF

0B0000–0BFFFF

0C0000–0CFFFF

0D0000–0DFFFF

0E0000–0EFFFF

0F0000–0FFFFF

100000–10FFFF

110000–11FFFF

120000–12FFFF

130000–13FFFF

140000–14FFFF

150000–15FFFF

160000–16FFFF

170000–17FFFF

180000–18FFFF

190000–19FFFF

1A0000–1AFFFF

1B0000–1BFFFF

1C0000–1CFFFF

1D0000–1DFFFF

1E0000–1EFFFF

1F0000–1F7FFF

1F8000–1F9FFF

1FA000–1FBFFF

1FC000–1FFFFF

Word Mode (x16)

000000–007FFF

008000–00FFFF

010000–017FFF

018000–01FFFF

020000–027FFF

028000–02FFFF

030000–037FFF

038000–03FFFF

040000–047FFF

048000–04FFFF

050000–057FFF

058000–05FFFF

060000–067FFF

068000–06FFFF

070000–077FFF

078000–07FFFF

080000–087FFF

088000–08FFFF

090000–097FFF

098000–09FFFF

0A0000–0A7FFF

0A8000–AFFFF

0B0000–0B7FFF

0B8000–0BFFFF

0C0000–0C7FFF

0C8000–0CFFFF

0D0000–0D7FFF

0D8000–0DFFFF

0E0000–0E7FFF

0E8000–0EFFFF

0F0000–0F7FFF

0F8000–0FBFFF

0FC000–0FCFFF

0FD000–0FDFFF

0FE000–0FFFFF

SA0

SA1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

X

0

X

0

X

0

64/32

32/16

8/4

SA2

SA3

SA4

SA5

SA6

SA7

SA8

SA9

SA10

SA11

SA12

SA13

SA14

SA15

SA16

SA17

SA18

SA19

SA20

SA21

SA22

SA23

SA24

SA25

SA26

SA27

SA28

SA29

SA30

SA31

SA32

SA33

SA34

1

0

1

8/4

1

X

16/8

Note: Address range is A19:A-1 in byte mode and A19:A0 in word mode. See “Word/Byte Configuration” section.

Am29LV160M

13

Table 3. Sector Address Tables (Am29LV160MB)

Sector Size

(Kbytes/

Address Range (in hexadecimal)

Sector A19 A18 A17 A16 A15 A14 A13 A12

Kwords)

Byte Mode (x8)

000000–003FFF

004000–005FFF

006000–007FFF

008000–00FFFF

010000–01FFFF

020000–02FFFF

030000–03FFFF

040000–04FFFF

050000–05FFFF

060000–06FFFF

070000–07FFFF

080000–08FFFF

090000–09FFFF

0A0000–0AFFFF

0B0000–0BFFFF

0C0000–0CFFFF

0D0000–0DFFFF

0E0000–0EFFFF

0F0000–0FFFFF

100000–10FFFF

110000–11FFFF

120000–12FFFF

130000–13FFFF

140000–14FFFF

150000–15FFFF

160000–16FFFF

170000–17FFFF

180000–18FFFF

190000–19FFFF

1A0000–1AFFFF

1B0000–1BFFFF

1C0000–1CFFFF

1D0000–1DFFFF

1E0000–1EFFFF

1F0000–1FFFFF

Word Mode (x16)

000000–001FFF

002000–002FFF

003000–003FFF

004000–007FFF

008000–00FFFF

010000–017FFF

018000–01FFFF

020000–027FFF

028000–02FFFF

030000–037FFF

038000–03FFFF

040000–047FFF

048000–04FFFF

050000–057FFF

058000–05FFFF

060000–067FFF

068000–06FFFF

070000–077FFF

078000–07FFFF

080000–087FFF

088000–08FFFF

090000–097FFF

098000–09FFFF

0A0000–0A7FFF

0A8000–0AFFFF

0B0000–0B7FFF

0B8000–0BFFFF

0C0000–0C7FFF

0C8000–0CFFFF

0D0000–0D7FFF

0D8000–0DFFFF

0E0000–0E7FFF

0E8000–0EFFFF

0F0000–0F7FFF

0F8000–0FFFFF

SA0

SA1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

X

0

16/8

8/4

SA2

0

1

8/4

SA3

1

X

32/16

64/32

SA4

X

SA5

SA6

SA7

SA8

SA9

SA10

SA11

SA12

SA13

SA14

SA15

SA16

SA17

SA18

SA19

SA20

SA21

SA22

SA23

SA24

SA25

SA26

SA27

SA28

SA29

SA30

SA31

SA32

SA33

SA34

Note: Address range is A19:A-1 in byte mode and A19:A0 in word mode. See the “Word/Byte Configuration” section.

14

Am29LV160M

Table 4. In addition, when verifying sector protection,

the sector address must appear on the appropriate

highest order address bits (see Tables 2 and 3). Table

4 shows the remaining address bits that are don’t care.

When all necessary bits have been set as required, the

programming equipment may then read the corre-

sponding identifier code on DQ7-DQ0.

Autoselect Mode

The autoselect mode provides manufacturer and de-

vice identification, and sector protection verification,

through identifier codes output on DQ7–DQ0. This

mode is primarily intended for programming equipment

to automatically match a device to be programmed with

its corresponding programming algorithm. However,

the autoselect codes can also be accessed in-system

through the command register.

To access the autoselect codes in-system, the host

system can issue the autoselect command via the

command register, as shown in Table 9. This method

When using programming equipment, the autoselect

does not require V . See “Command Definitions” for

ID

mode requires V (11.5 V to 12.5 V) on address pin

ID

details on using the autoselect mode.

A9. Address pins A6, A1, and A0 must be as shown in

Table 4. Am29LV160M Autoselect Codes (High Voltage Method)

A19 A11

to to

Mode CE# OE# WE# A12 A10 A9

A8

to

A7

A5

to

A2

DQ8

to

A0 DQ15

DQ7

to

DQ0

Description

A6

A1

Manufacturer ID: AMD

L

H

X

V

X

L

X

L

X

01h

C4h

ID

Device ID:

Am29LV160M

(Top Boot Block)

Word

Byte

Word

Byte

22h

X

V

X

L

X

L

H

ID

L

H

X

22h

X

C4h

49h

Device ID:

Am29LV160M

(Bottom Boot Block)

X

V

X

H

L

ID

01h

(protected)

X

Sector Protection Verification

L

H

SA

L

H

ID

00h

(unprotected)

L = Logic Low = V , H = Logic High = V , SA = Sector Address, X = Don’t care.

IL

IH

Note: The autoselect codes may also be accessed in-system via command sequences. See Table 9.

The primary method requires V on the RESET# pin

Sector Protection/Unprotection

ID

only, and can be implemented either in-system or via

programming equipment. Figure 2 shows the algo-

rithms and Figure 21 shows the timing diagram. This

method uses standard microprocessor bus cycle tim-

ing. For sector unprotect, all unprotected sectors must

first be protected prior to the first sector unprotect write

cycle.

The hardware sector protection feature disables both

program and erase operations in any sector. The hard-

ware sector unprotection feature re-enables both pro-

gram and erase operations in previously protected

sectors.

The device is shipped with all sectors unprotected.

AMD offers the option of programming and protecting

sectors at its factory prior to shipping the device

through AMD’s ExpressFlash™ Service. Contact an

AMD representative for details.

The alternate method intended only for programming

equipment requires V on address pin A9 and OE#.

ID

This method is compatible with programmer routines

written for earlier 3.0 volt-only AMD flash devices. De-

tails on this method are provided in a supplement, pub-

lication number 21468. Contact an AMD representative

to request a copy.

It is possible to determine whether a sector is protected

or unprotected. See “Autoselect Mode” for details.

Sector protection/unprotection can be implemented via

two methods.

Am29LV160M

15

Temporary Sector Unprotect

This feature allows temporary unprotection of previ-

ously protected sectors to change data in-system. The

Sector Unprotect mode is activated by setting the RE-

START

SET# pin to V . During this mode, formerly protected

sectors can be programmed or erased by selecting the

ID

RESET# = V

(Note 1)

ID

sector addresses. Once V is removed from the RE-

ID

SET# pin, all the previously protected sectors are

protected again. Figure shows the algorithm, and Fig-

ure 20 shows the timing diagrams, for this feature.

Perform Erase or

Program Operations

RESET# = V

IH

Temporary Sector

Unprotect Completed

(Note 2)

Notes:

1. All protected sectors unprotected.

2. All previously protected sectors are protected once

again.

Figure 1. Temporary Sector Unprotect Operation

16

Am29LV160M

START

Protect all sectors:

The indicated portion

of the sector protect

algorithm must be

performed for all

PLSCNT = 1

RESET# = V_ID

unprotected sectors

prior to issuing the

first sector

Wait 1 µs

unprotect address

No

First Write

No

First Write

Cycle = 60h?

Temporary Sector

Unprotect Mode

Temporary Sector

Unprotect Mode

Cycle = 60h?

Yes

Set up sector

address

No

All sectors

protected?

Sector Protect:

Write 60h to sector

address with

A6 = 0, A1 = 1,

A0 = 0

Yes

Set up first sector

address

Sector Unprotect:

Wait 150 µs

Write 60h to sector

address with

A6 = 1, A1 = 1,

A0 = 0

Verify Sector

Protect: Write 40h

to sector address

with A6 = 0,

Reset

PLSCNT = 1

Increment

PLSCNT

Wait 15 ms

A1 = 1, A0 = 0

Verify Sector

Unprotect: Write

40h to sector

address with

A6 = 1, A1 = 1,

A0 = 0

Read from

sector address

with A6 = 0,

A1 = 1, A0 = 0

Increment

PLSCNT

No

PLSCNT

= 25?

Read from

sector address

with A6 = 1,

Data = 01h?

Yes

A1 = 1, A0 = 0

No

Yes

Set up

next sector

address

Yes

No

PLSCNT

= 1000?

Protect another

sector?

Data = 00h?

Yes

Device failed

No

Yes

Remove V_ID

from RESET#

No

Last sector

verified?

Device failed

Write reset

command

Yes

Remove V_ID

In-System Single

High Voltage

Sector Unprotect

Algorithm

from RESET#

In-System Single

High Voltage

Sector Protect

Algorithm

Sector Protect

complete

Write reset

command

Sector Unprotect

complete

Figure 2. In-System Single High Voltage Sector Protect/Unprotect Algorithms

Am29LV160M

17

mode), any time the device is ready to read array data.

The system can read CFI information at the addresses

given in Tables 5–8. In word mode, the upper address

bits (A7–MSB) must be all zeros. To terminate reading

CFI data, the system must write the reset command.

COMMON FLASH MEMORY INTERFACE

(CFI)

The Common Flash Interface (CFI) specification out-

lines device and host system software interrogation

handshake, which allows specific vendor-specified

software algorithms to be used for entire families of

devices. Software support can then be device-indepen-

dent, JEDEC ID-independent, and forward- and back-

ward-compatible for the specified flash device families.

Flash vendors can standardize their existing interfaces

for long-term compatibility.

The system can also write the CFI query command

when the device is in the autoselect mode. The device

enters the CFI query mode, and the system can read

CFI data at the addresses given in Tables 5–8. The

system must write the reset command to return the

device to the read/reset mode.

For further information, please refer to the CFI Specifi-

cation and CFI Publication 100. Alternatively, contact

an AMD representative for copies of these documents.

This device enters the CFI Query mode when the

system writes the CFI Query command, 98h, to

address 55h in word mode (or address AAh in byte

Table 5. CFI Query Identification String

Addresses

(Word Mode)

(Byte Mode)

Data

Description

10h

11h

12h

20h

22h

24h

0051h

0052h

0059h

Query Unique ASCII string “QRY”

13h

14h

26h

28h

0002h

0000h

Primary OEM Command Set

15h

16h

2Ah

2Ch

0040h

0000h

Address for Primary Extended Table

17h

18h

2Eh

30h

0000h

Alternate OEM Command Set (00h = none exists)

Address for Alternate OEM Extended Table (00h = none exists)

19h

1Ah

32h

34h

0000h

Table 6. System Interface String

Data Description

Addresses

(Word Mode)

Addresses

(Byte Mode)

V

Min. (write/erase)

CC

1Bh

1Ch

36h

38h

0027h

0036h

D7–D4: volt, D3–D0: 100 millivolt

V

Max. (write/erase)

CC

D7–D4: volt, D3–D0: 100 millivolt

1Dh

1Eh

1Fh

20h

21h

22h

23h

24h

25h

26h

3Ah

3Ch

3Eh

40h

42h

44h

46h

48h

4Ah

4Ch

0000h

0007h

0000h

000Ah

0000h

0001h

0000h

0004h

0000h

V

Min. voltage (00h = no V pin present)

PP

Max. voltage (00h = no V pin present)

PP

N

Typical timeout per single byte/word write 2 µs

N

Typical timeout for Min. size buffer write 2 µs (00h = not supported)

N

Typical timeout per individual block erase 2 ms

N

Typical timeout for full chip erase 2 ms (00h = not supported)

N

Max. timeout for byte/word write 2 times typical

N

Max. timeout for buffer write 2 times typical

N

Max. timeout per individual block erase 2 times typical

N

Max. timeout for full chip erase 2 times typical (00h = not supported)

18

Am29LV160M

Table 7. Device Geometry Definition

Addresses

(Word Mode)

(Byte Mode)

Data

Description

N

27h

4Eh

0015h

Device Size = 2 byte

28h

29h

50h

52h

0002h

0000h

Flash Device Interface description (refer to CFI publication 100)

N

2Ah

2Bh

54h

56h

0000h

Max. number of byte in multi-byte write = 2

(00h = not supported)

2Ch

58h

0004h

Number of Erase Block Regions within device

2Dh

2Eh

2Fh

30h

5Ah

5Ch

5Eh

60h

0000h

0040h

0000h

Erase Block Region 1 Information

(refer to the CFI specification or CFI publication 100)

31h

32h

33h

34h

62h

64h

66h

68h

0001h

0000h

0020h

0000h

Erase Block Region 2 Information

Erase Block Region 3 Information

Erase Block Region 4 Information

35h

36h

37h

38h

6Ah

6Ch

6Eh

70h

0000h

0080h

0000h

39h

3Ah

3Bh

3Ch

72h

74h

76h

78h

001Eh

0000h

0001h

Table 8. Primary Vendor-Specific Extended Query

Addresses

(Word Mode)

(Byte Mode)

Data

Description

40h

41h

42h

80h

82h

84h

0050h

0052h

0049h

Query-unique ASCII string “PRI”

43h

44h

86h

88h

0031h

0033h

Major version number, ASCII

Minor version number, ASCII

Address Sensitive Unlock

0 = Required, 1 = Not Required

45h

46h

47h

48h

8Ah

8Ch

8Eh

90h

0000h

0002h

0001h

Erase Suspend

0 = Not Supported, 1 = To Read Only, 2 = To Read & Write

Sector Protect

0 = Not Supported, X = Number of sectors in per group

Sector Temporary Unprotect

00 = Not Supported, 01 = Supported

Sector Protect/Unprotect scheme

49h

4Ah

92h

94h

0004h

0000h

01 = 29F040 mode, 02 = 29F016 mode,

03 = 29F400 mode, 04 = 29LV800A mode

Simultaneous Operation

00 = Not Supported, 01 = Supported

Am29LV160M

19

Table 8. Primary Vendor-Specific Extended Query (Continued)

Addresses

(Word Mode)

(Byte Mode)

Data

Description

Burst Mode Type

00 = Not Supported, 01 = Supported

4Bh

4Ch

96h

0000h

Page Mode Type

00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page

98h

0000h

Hardware Data Protection

The command sequence requirement of unlock cycles

for programming or erasing provides data protection

against inadvertent writes (refer to Table 9 for com-

mand definitions). In addition, the following hardware

data protection measures prevent accidental erasure

or programming, which might otherwise be caused by

proper signals to the control pins to prevent uninten-

tional writes when V is greater than V

.

CC

LKO

Write Pulse “Glitch” Protection

Noise pulses of less than 5 ns (typical) on OE#, CE# or

WE# do not initiate a write cycle.

spurious system level signals during V

and power-down transitions, or from system noise.

power-up

CC

Logical Inhibit

Write cycles are inhibited by holding any one of OE# =

V , CE# = V or WE# = V . To initiate a write cycle,

Low V Write Inhibit

CC

IL

IH

CE# and WE# must be a logical zero while OE# is a

logical one.

When V

is less than V

, the device does not ac-

LKO

CC

cept any write cycles. This protects data during V

CC

power-up and power-down. The command register and

all internal program/erase circuits are disabled, and the

Power-Up Write Inhibit

If WE# = CE# = V and OE# = V during power up, the

IL

IH

device resets. Subsequent writes are ignored until V

CC

device does not accept commands on the rising edge

of WE#. The internal state machine is automatically

reset to reading array data on power-up.

is greater than V

. The system must provide the

LKO

20

Am29LV160M

COMMAND DEFINITIONS

Writing specific address and data commands or

sequences into the command register initiates device

operations. Table 9 defines the valid register command

sequences. Writing incorrect address and data

values or writing them in the improper sequence

resets the device to reading array data.

The reset command may be written between the se-

quence cycles in an autoselect command sequence.

Once in the autoselect mode, the reset command must

be written to return to reading array data (also applies

to autoselect during Erase Suspend).

If DQ5 goes high during a program or erase operation,

writing the reset command returns the device to read-

ing array data (also applies during Erase Suspend).

All addresses are latched on the falling edge of WE# or

CE#, whichever happens later. All data is latched on

the rising edge of WE# or CE#, whichever happens

first. Refer to the appropriate timing diagrams in the

“AC Characteristics” section.

Autoselect Command Sequence

The autoselect command sequence allows the host

system to access the manufacturer and devices codes,

and determine whether or not a sector is protected.

Table 9 shows the address and data requirements.

This method is an alternative to that shown in Table 4,

which is intended for PROM programmers and requires

Reading Array Data

The device is automatically set to reading array data

after device power-up. No commands are required to

retrieve data. The device is also ready to read array

data after completing an Embedded Program or Em-

bedded Erase algorithm.

V

on address bit A9.

ID

The autoselect command sequence is initiated by writ-

ing two unlock cycles, followed by the autoselect com-

mand. The device then enters the autoselect mode,

and the system may read at any address any number

of times, without initiating another command sequence.

After the device accepts an Erase Suspend com-

mand, the device enters the Erase Suspend mode.

The system can read array data using the standard

read timings, except that if it reads at an address

within erase-suspended sectors, the device outputs

status data. After completing a programming opera-

tion in the Erase Suspend mode, the system may

once again read array data with the same exception.

See “Erase Suspend/Erase Resume Commands” for

more information on this mode.

A read cycle at address XX00h retrieves the manufac-

turer code. A read cycle at address XX01h returns the

device code. A read cycle containing a sector address

(SA) and the address XX02h in word mode (or XX04h

in byte mode) returns XX01h if that sector is protected,

or 00h if it is unprotected. Refer to Tables 2 and 3 for

valid sector addresses.

The system must issue the reset command to re-en-

able the device for reading array data if DQ5 goes high,

or while in the autoselect mode. See the “Reset Com-

mand” section, next.

The system must write the reset command to exit the

autoselect mode and return to reading array data.

Word/Byte Program Command Sequence

See also “Requirements for Reading Array Data” in the

“Device Bus Operations” section for more information.

The Read Operations table provides the read parame-

ters, and Figure 11 shows the timing diagram.

The system may program the device by word or byte,

depending on the state of the BYTE# pin. Program-

ming is a four-bus-cycle operation. The program com-

mand sequence is initiated by writing two unlock write

cycles, followed by the program set-up command.

The program address and data are written next, which

in turn initiate the Embedded Program algorithm. The

system is not required to provide further controls or

timings. The device automatically generates the pro-

gram pulses and verifies the programmed cell margin.

Table 9 shows the address and data requirements for

the byte program command sequence.

Reset Command

Writing the reset command to the device resets the de-

vice to reading array data. Address bits are don’t care

for this command.

The reset command may be written between the se-

quence cycles in an erase command sequence before

erasing begins. This resets the device to reading array

data. Once erasure begins, however, the device ig-

nores reset commands until the operation is complete.

When the Embedded Program algorithm is complete,

the device then returns to reading array data and ad-

dresses are no longer latched. The system can deter-

mine the status of the program operation by using

DQ7, DQ6, or RY/BY#. See “Write Operation Status”

for information on these status bits.

The reset command may be written between the se-

quence cycles in a program command sequence be-

fore programming begins. This resets the device to

reading array data (also applies to programming in

Erase Suspend mode). Once programming begins,

however, the device ignores reset commands until the

operation is complete.

Any commands written to the device during the Em-

bedded Program Algorithm are ignored. Note that a

Am29LV160M

21

hardware reset immediately terminates the program-

ming operation. The Byte Program command se-

quence should be reinitiated once the device has reset

to reading array data, to ensure data integrity.

START

Programming is allowed in any sequence and across

sector boundaries. A bit cannot be programmed

from a “0” back to a “1”. Attempting to do so may halt

the operation and set DQ5 to “1,” or cause the Data#

Polling algorithm to indicate the operation was suc-

cessful. However, a succeeding read will show that the

data is still “0”. Only erase operations can convert a “0”

to a “1”.

Write Program

Command Sequence

Data Poll

from System

Embedded

Program

algorithm

in progress

Unlock Bypass Command Sequence

The unlock bypass feature allows the system to pro-

gram bytes or words to the device faster than using the

standard program command sequence. The unlock by-

pass command sequence is initiated by first writing two

unlock cycles. This is followed by a third write cycle

containing the unlock bypass command, 20h. The de-

vice then enters the unlock bypass mode. A two-cycle

unlock bypass program command sequence is all that

is required to program in this mode. The first cycle in

this sequence contains the unlock bypass program

command, A0h; the second cycle contains the program

address and data. Additional data is programmed in

the same manner. This mode dispenses with the initial

two unlock cycles required in the standard program

command sequence, resulting in faster total program-

ming time. Table 9 shows the requirements for the

command sequence.

Verify Data?

Yes

No

Increment Address

Last Address?

Yes

Programming

Completed

Note: See Table 9 for program command sequence.

Figure 3. Program Operation

During the unlock bypass mode, only the Unlock By-

pass Program and Unlock Bypass Reset commands

are valid. To exit the unlock bypass mode, the system

must issue the two-cycle unlock bypass reset com-

mand sequence. The first cycle must contain the data

90h; the second cycle the data 00h. Addresses are

don’t care for both cycles. The device then returns to

reading array data.

Chip Erase Command Sequence

Chip erase is a six bus cycle operation. The chip erase

command sequence is initiated by writing two unlock

cycles, followed by a set-up command. Two additional

unlock write cycles are then followed by the chip erase

command, which in turn invokes the Embedded Erase

algorithm. The device does not require the system to

preprogram prior to erase. The Embedded Erase algo-

rithm automatically preprograms and verifies the entire

memory for an all zero data pattern prior to electrical

erase. The system is not required to provide any con-

trols or timings during these operations. Table 9 shows

the address and data requirements for the chip erase

command sequence.

Figure 3 illustrates the algorithm for the program oper-

ation. See the Erase/Program Operations table in “AC

Characteristics” for parameters, and to Figure 15 for

timing diagrams.

Any commands written to the chip during the Embed-

ded Erase algorithm are ignored. Note that a hardware

reset during the chip erase operation immediately ter-

minates the operation. The Chip Erase command se-

quence should be reinitiated once the device has

returned to reading array data, to ensure data integrity.

The system can determine the status of the erase op-

eration by using DQ7, DQ6, DQ2, or RY/BY#. See

22

Am29LV160M

“Write Operation Status” for information on these sta-

tus bits. When the Embedded Erase algorithm is com-

plete, the device returns to reading array data and

addresses are no longer latched.

When the Embedded Erase algorithm is complete, the

device returns to reading array data and addresses are

no longer latched. The system can determine the sta-

tus of the erase operation by using DQ7, DQ6, DQ2, or

RY/BY#. (Refer to “Write Operation Status” for informa-

tion on these status bits.)

Figure 4 illustrates the algorithm for the erase opera-

tion. See the Erase/Program Operations tables in “AC

Characteristics” for parameters, and to Figure 16 for

timing diagrams.

Figure 4 illustrates the algorithm for the erase opera-

tion. Refer to the Erase/Program Operations tables in

the “AC Characteristics” section for parameters, and to

Figure 16 for timing diagrams.

Sector Erase Command Sequence

Sector erase is a six bus cycle operation. The sector

erase command sequence is initiated by writing two

unlock cycles, followed by a set-up command. Two ad-

ditional unlock write cycles are then followed by the ad-

dress of the sector to be erased, and the sector erase

command. Table 9 shows the address and data re-

quirements for the sector erase command sequence.

Erase Suspend/Erase Resume Commands

The Erase Suspend command allows the system to in-

terrupt a sector erase operation and then read data

from, or program data to, any sector not selected for

erasure. This command is valid only during the sector

erase operation, including the 50 µs time-out period

during the sector erase command sequence. The

Erase Suspend command is ignored if written during

the chip erase operation or Embedded Program algo-

rithm. Writing the Erase Suspend command during the

Sector Erase time-out immediately terminates the

time-out period and suspends the erase operation. Ad-

dresses are “don’t-cares” when writing the Erase Sus-

pend command.

The device does not require the system to preprogram

the memory prior to erase. The Embedded Erase algo-

rithm automatically programs and verifies the sector for

an all zero data pattern prior to electrical erase. The

system is not required to provide any controls or tim-

ings during these operations.

After the command sequence is written, a sector erase

time-out of 50 µs begins. During the time-out period,

additional sector addresses and sector erase com-

mands may be written. Loading the sector erase buffer

may be done in any sequence, and the number of sec-

tors may be from one sector to all sectors. The time be-

tween these additional cycles must be less than 50 µs,

otherwise the last address and command might not be

accepted, and erasure may begin. It is recommended

that processor interrupts be disabled during this time to

ensure all commands are accepted. The interrupts can

be re-enabled after the last Sector Erase command is

written. If the time between additional sector erase

commands can be assumed to be less than 50 µs, the

system need not monitor DQ3. Any command other

than Sector Erase or Erase Suspend during the

time-out period resets the device to reading array

data. The system must rewrite the command sequence

and any additional sector addresses and commands.

When the Erase Suspend command is written during a

sector erase operation, the device requires a maximum

of 20 µs to suspend the erase operation. However,

when the Erase Suspend command is written during

the sector erase time-out, the device immediately ter-

minates the time-out period and suspends the erase

operation.

After the erase operation has been suspended, the

system can read array data from or program data to

any sector not selected for erasure. (The device “erase

suspends” all sectors selected for erasure.) Normal

read and write timings and command definitions apply.

Reading at any address within erase-suspended sec-

tors produces status data on DQ7–DQ0. The system

can use DQ7, or DQ6 and DQ2 together, to determine

if a sector is actively erasing or is erase-suspended.

See “Write Operation Status” for information on these

status bits.

The system can monitor DQ3 to determine if the sector

erase timer has timed out. (See the “DQ3: Sector

Erase Timer” section.) The time-out begins from the ris-

ing edge of the final WE# pulse in the command se-

quence.

After an erase-suspended program operation is com-

plete, the system can once again read array data within

non-suspended sectors. The system can determine the

status of the program operation using the DQ7 or DQ6

status bits, just as in the standard program operation.

See “Write Operation Status” for more information.

Once the sector erase operation has begun, only the

Erase Suspend command is valid. All other commands

are ignored. Note that a hardware reset during the

sector erase operation immediately terminates the op-

eration. The Sector Erase command sequence should

be reinitiated once the device has returned to reading

array data, to ensure data integrity.

The system may also write the autoselect command

sequence when the device is in the Erase Suspend

mode. The device allows reading autoselect codes

even at addresses within erasing sectors, since the

codes are not stored in the memory array. When the

device exits the autoselect mode, the device reverts to

Am29LV160M

23

the Erase Suspend mode, and is ready for another

valid operation. See “Autoselect Command Sequence”

for more information.

START

The system must write the Erase Resume command

(address bits are “don’t care”) to exit the erase suspend

mode and continue the sector erase operation. Further

writes of the Resume command are ignored. Another

Erase Suspend command can be written after the de-

vice has resumed erasing.

Write Erase

Command Sequence

Data Poll

from System

Embedded

Erase

algorithm

in progress

No

Data = FFh?

Yes

Erasure Completed

Notes:

1. See Table 9 for erase command sequence.

2. See “DQ3: Sector Erase Timer” for more information.

Figure 4. Erase Operation

24

Am29LV160M

Command Definitions

Table 9. Am29LV160M Command Definitions

Bus Cycles (Notes 2–5)

Command

Sequence

(Note 1)

First

Second

Third

Addr

Fourth

Fifth

Sixth

Addr Data Addr Data

Data Addr Data Addr Data Addr Data

Read (Note 6)

Reset (Note 7)

1

RA

XXX

555

RD

F0

Word

2AA

555

2AA

555

2AA

555

AAA

555

Manufacturer ID

4

AA

55

90

X00

01

Byte

Word

Byte

Word

Byte

AAA

555

X01 22C4

Device ID,

Top Boot Block

AAA

555

AAA

555

X02

X01

X02

C4

2249

49

Device ID,

Bottom Boot Block

AAA

XX00

XX01

00

(SA)

X02

Word

Byte

555

2AA

555

Sector Protect Verify

(Note 9)

4

AA

55

90

(SA)

X04

AAA

01

Word

Byte

Word

Byte

Word

Byte

55

CFI Query (Note 10)

Program

1

4

3

98

AA

555

AAA

555

AAA

XXX

555

AAA

555

AAA

XXX

2AA

555

2AA

555

PA

555

AAA

555

55

A0

20

PA

PD

Unlock Bypass

AAA

Unlock Bypass Program (Note 11)

Unlock Bypass Reset (Note 12)

2

A0

90

PD

00

XXX

2AA

555

2AA

555

Word

555

AAA

555

AAA

555

2AA

555

2AA

555

Chip Erase

Byte

6

AA

55

80

AA

55

10

30

AAA

Word

Sector Erase

Byte

SA

AAA

Erase Suspend (Note 13)

Erase Resume (Note 14)

1

B0

30

Legend:

X = Don’t care

PD = Data to be programmed at location PA. Data latches on the

rising edge of WE# or CE# pulse, whichever happens first.

RA = Address of the memory location to be read.

SA = Address of the sector to be verified (in autoselect mode) or

erased. Address bits A19–A12 uniquely select any sector.

RD = Data read from location RA during read operation.

PA = Address of the memory location to be programmed.

Addresses latch on the falling edge of the WE# or CE# pulse,

whichever happens later.

Notes:

1. See Table 1 for description of bus operations.

2. All values are in hexadecimal.

9. The data is 00h for an unprotected sector and 01h for a

protected sector. See “Autoselect Command Sequence” for

more information.

3. Except for the read cycle and the fourth cycle of the

autoselect command sequence, all bus cycles are write

cycles.

10. Command is valid when device is ready to read array data or

when device is in autoselect mode.

11. The Unlock Bypass command is required prior to the Unlock

Bypass Program command.

4. Data bits DQ15–DQ8 are don’t cares for unlock and

command cycles.

12. The Unlock Bypass Reset command is required to return to

reading array data when the device is in the unlock bypass

mode.

5. Address bits A19–A11 are don’t cares for unlock and

command cycles, unless SA or PA required.

6. No unlock or command cycles required when reading array

data.

13. The system may read and program in non-erasing sectors, or

enter the autoselect mode, when in the Erase Suspend

mode. The Erase Suspend command is valid only during a

sector erase operation.

7. The Reset command is required to return to reading array

data when device is in the autoselect mode, or if DQ5 goes

high (while the device is providing status data).

14. The Erase Resume command is valid only during the Erase

Suspend mode.

8. The fourth cycle of the autoselect command sequence is a

read cycle.

Am29LV160M

25

WRITE OPERATION STATUS

The device provides several bits to determine the

status of a write operation: DQ2, DQ3, DQ5, DQ6,

DQ7, and RY/BY#. Table 10 and the following subsec-

tions describe the functions of these bits. DQ7,

RY/BY#, and DQ6 each offer a method for determining

whether a program or erase operation is complete or in

progress. These three bits are discussed first.

Table 10 shows the outputs for Data# Polling on DQ7.

Figure 5 shows the Data# Polling algorithm.

START

DQ7: Data# Polling

The Data# Polling bit, DQ7, indicates to the host

system whether an Embedded Algorithm is in progress

or completed, or whether the device is in Erase Sus-

pend. Data# Polling is valid after the rising edge of the

final WE# pulse in the program or erase command

sequence.

Read DQ7–DQ0

Addr = VA

Yes

DQ7 = Data?

During the Embedded Program algorithm, the device

outputs on DQ7 the complement of the datum pro-

grammed to DQ7. This DQ7 status also applies to pro-

gramming during Erase Suspend. When the

Embedded Program algorithm is complete, the device

outputs the datum programmed to DQ7. The system

must provide the program address to read valid status

information on DQ7. If a program address falls within a

protected sector, Data# Polling on DQ7 is active for

approximately 1 µs, then the device returns to reading

array data.

No

DQ5 = 1?

Yes

During the Embedded Erase algorithm, Data# Polling

produces a “0” on DQ7. When the Embedded Erase

algorithm is complete, or if the device enters the Erase

Suspend mode, Data# Polling produces a “1” on DQ7.

This is analogous to the complement/true datum output

described for the Embedded Program algorithm: the

erase function changes all the bits in a sector to “1”;

prior to this, the device outputs the “complement,” or

“0.” The system must provide an address within any of

the sectors selected for erasure to read valid status

information on DQ7.

Read DQ7–DQ0

Addr = VA

Yes

DQ7 = Data?

No

PASS

FAIL

After an erase command sequence is written, if all

sectors selected for erasing are protected, Data#

Polling on DQ7 is active for approximately 100 µs, then

the device returns to reading array data. If not all

selected sectors are protected, the Embedded Erase

algorithm erases the unprotected sectors, and ignores

the selected sectors that are protected.

Notes:

1. VA = Valid address for programming. During a sector

erase operation, a valid address is an address within any

sector selected for erasure. During chip erase, a valid

address is any non-protected sector address.

2. DQ7 should be rechecked even if DQ5 = “1” because

When the system detects DQ7 has changed from the

complement to true data, it can read valid data at DQ7–

DQ0 on the following read cycles. This is because DQ7

may change asynchronously with DQ0–DQ6 while

Output Enable (OE#) is asserted low. Figure 17, Data#

Polling Timings (During Embedded Algorithms), in the

“AC Characteristics” section illustrates this.

DQ7 may change simultaneously with DQ5.

Figure 5. Data# Polling Algorithm

26

Am29LV160M

Table 10 shows the outputs for Toggle Bit I on DQ6.

Figure 6 shows the toggle bit algorithm in flowchart

form, and the section “Reading Toggle Bits DQ6/DQ2”

explains the algorithm. Figure 18 in the “AC Character-

istics” section shows the toggle bit timing diagrams.

Figure 19 shows the differences between DQ2 and

DQ6 in graphical form. See also the subsection on

“DQ2: Toggle Bit II”.

RY/BY#: Ready/Busy#

The RY/BY# is a dedicated, open-drain output pin that

indicates whether an Embedded Algorithm is in

progress or complete. The RY/BY# status is valid after

the rising edge of the final WE# pulse in the command

sequence. Since RY/BY# is an open-drain output,

several RY/BY# pins can be tied together in parallel

with a pull-up resistor to V . (The RY/BY# pin is not

CC

available on the 44-pin SO package.)

DQ2: Toggle Bit II

If the output is low (Busy), the device is actively erasing

or programming. (This includes programming in the

Erase Suspend mode.) If the output is high (Ready),

the device is ready to read array data (including during

the Erase Suspend mode), or is in the standby mode.

The “Toggle Bit II” on DQ2, when used with DQ6, indi-

cates whether a particular sector is actively erasing

(that is, the Embedded Erase algorithm is in progress),

or whether that sector is erase-suspended. Toggle Bit

II is valid after the rising edge of the final WE# pulse in

the command sequence.

Table 10 shows the outputs for RY/BY#. Figures 11, 12,

15 and 16 shows RY/BY# for read, reset, program, and

erase operations, respectively.

DQ2 toggles when the system reads at addresses

within those sectors that have been selected for era-

sure. (The system may use either OE# or CE# to

control the read cycles.) But DQ2 cannot distinguish

whether the sector is actively erasing or is erase-sus-

pended. DQ6, by comparison, indicates whether the

device is actively erasing, or is in Erase Suspend, but

cannot distinguish which sectors are selected for era-

sure. Thus, both status bits are required for sector and

mode information. Refer to Table 10 to compare

outputs for DQ2 and DQ6.

DQ6: Toggle Bit I

Toggle Bit I on DQ6 indicates whether an Embedded

Program or Erase algorithm is in progress or complete,

or whether the device has entered the Erase Suspend

mode. Toggle Bit I may be read at any address, and is

valid after the rising edge of the final WE# pulse in the

command sequence (prior to the program or erase

operation), and during the sector erase time-out.

During an Embedded Program or Erase algorithm

operation, successive read cycles to any address

cause DQ6 to toggle. (The system may use either OE#

or CE# to control the read cycles.) When the operation

is complete, DQ6 stops toggling.

Figure 6 shows the toggle bit algorithm in flowchart

form, and the section “Reading Toggle Bits DQ6/DQ2”

explains the algorithm. See also the DQ6: Toggle Bit I

subsection. Figure 18 shows the toggle bit timing dia-

gram. Figure 19 shows the differences between DQ2

and DQ6 in graphical form.

After an erase command sequence is written, if all

sectors selected for erasing are protected, DQ6

toggles for approximately 100 µs, then returns to

reading array data. If not all selected sectors are pro-

tected, the Embedded Erase algorithm erases the

unprotected sectors, and ignores the selected sectors

that are protected.

Reading Toggle Bits DQ6/DQ2

Refer to Figure 6 for the following discussion. When-

ever the system initially begins reading toggle bit sta-

tus, it must read DQ7–DQ0 at least twice in a row to

determine whether a toggle bit is toggling. Typically,

the system would note and store the value of the tog-

gle bit after the first read. After the second read, the

system would compare the new value of the toggle bit

with the first. If the toggle bit is not toggling, the device

has completed the program or erase operation. The

system can read array data on DQ7–DQ0 on the fol-

lowing read cycle.

The system can use DQ6 and DQ2 together to deter-

mine whether a sector is actively erasing or is erase-

suspended. When the device is actively erasing (that

is, the Embedded Erase algorithm is in progress), DQ6

toggles. When the device enters the Erase Suspend

mode, DQ6 stops toggling. However, the system must

also use DQ2 to determine which sectors are erasing

or erase-suspended. Alternatively, the system can use

DQ7 (see the subsection on “DQ7: Data# Polling”).

However, if after the initial two read cycles, the system

determines that the toggle bit is still toggling, the

system also should note whether the value of DQ5 is

high (see the section on DQ5). If it is, the system

should then determine again whether the toggle bit is

toggling, since the toggle bit may have stopped tog-

gling just as DQ5 went high. If the toggle bit is no longer

toggling, the device has successfully completed the

program or erase operation. If it is still toggling, the

device did not complete the operation successfully, and

If a program address falls within a protected sector,

DQ6 toggles for approximately 1 µs after the program

command sequence is written, then returns to reading

array data.

DQ6 also toggles during the erase-suspend-program

mode, and stops toggling once the Embedded

Program algorithm is complete.

Am29LV160M

27

the system must write the reset command to return to

reading array data.

The remaining scenario is that the system initially

determines that the toggle bit is toggling and DQ5 has

not gone high. The system may continue to monitor the

toggle bit and DQ5 through successive read cycles,

determining the status as described in the previous

paragraph. Alternatively, it may choose to perform

other system tasks. In this case, the system must start

at the beginning of the algorithm when it returns to

determine the status of the operation (top of Figure 6).

START

Read DQ7–DQ0

(Note 1)

No

Toggle Bit

= Toggle?

Yes

No

DQ5 = 1?

Yes

Read DQ7–DQ0

(Notes

1, 2)

Twice

Toggle Bit

= Toggle?

No

Yes

Program/Erase

Operation Not

Complete, Write

Reset Command

Program/Erase

Operation Complete

Notes:

1. Read toggle bit twice to determine whether or not it is

toggling. See text.

2. Recheck toggle bit because it may stop toggling as DQ5

changes to “1”. See text.

Figure 6. Toggle Bit Algorithm

28

Am29LV160M

sectors are selected for erasure, the entire time-out also

applies after each additional sector erase command.

When the time-out is complete, DQ3 switches from “0”

to “1.” The system may ignore DQ3 if the system can

guarantee that the time between additional sector

erase commands will always be less than 50 µs. See

also the “Sector Erase Command Sequence” section.

DQ5: Exceeded Timing Limits

DQ5 indicates whether the program or erase time has

exceeded a specified internal pulse count limit. Under

these conditions DQ5 produces a “1.” This is a failure

condition that indicates the program or erase cycle was

not successfully completed.

The DQ5 failure condition may appear if the system

tries to program a “1” to a location that is previously

programmed to “0.” Only an erase operation can

change a “0” back to a “1.” Under this condition, the

device halts the operation, and when the operation has

exceeded the timing limits, DQ5 produces a “1.”

After the sector erase command sequence is written,

the system should read the status on DQ7 (Data# Poll-

ing) or DQ6 (Toggle Bit I) to ensure the device has ac-

cepted the command sequence, and then read DQ3. If

DQ3 is “1”, the internally controlled erase cycle has be-

gun; all further commands (other than Erase Suspend)

are ignored until the erase operation is complete. If

DQ3 is “0”, the device will accept additional sector

erase commands. To ensure the command has been

accepted, the system software should check the status

of DQ3 prior to and following each subsequent sector

erase command. If DQ3 is high on the second status

check, the last command might not have been ac-

cepted. Table 10 shows the outputs for DQ3.

Under both these conditions, the system must issue

the reset command to return the device to reading

array data.

DQ3: Sector Erase Timer

After writing a sector erase command sequence, the

system may read DQ3 to determine whether or not an

erase operation has begun. (The sector erase timer

does not apply to the chip erase command.) If additional

Table 10. Write Operation Status

DQ7

DQ5

DQ2

Operation

(Note 2)

DQ6

(Note 1)

DQ3

N/A

1

(Note 2)

RY/BY#

Embedded Program Algorithm

Embedded Erase Algorithm

DQ7#

0

Toggle

0

No toggle

Toggle

0

Standard

Mode

Reading within Erase

Suspended Sector

1

No toggle

0

N/A

Toggle

1

Erase

Suspend Reading within Non-Erase

Data

0

Data

N/A

Data

N/A

1

0

Mode

Suspended Sector

Erase-Suspend-Program

DQ7#

Toggle

Notes:

1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.

See “DQ5: Exceeded Timing Limits” for more information.

2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.

Am29LV160M

29

ABSOLUTE MAXIMUM RATINGS

Storage Temperature

Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C

20 ns

Ambient Temperature

with Power Applied . . . . . . . . . . . . . –55°C to +125°C

+0.8 V

Voltage with Respect to Ground

–0.5 V

–2.0 V

V

(Note 1). . . . . . . . . . . . . . . . . .–0.5 V to +4.0 V

CC

A9, OE#, and RESET# (Note 2). .–0.5 V to +12.5 V

All other pins (Note 1). . . . . . . –0.5 V to V +0.5 V

CC

20 ns

Output Short Circuit Current (Note 3) . . . . . . 200 mA

Figure 7. Maximum Negative

Overshoot Waveform

Notes:

1. Minimum DC voltage on input or I/O pins is –0.5 V. During

voltage transitions, input or I/O pins may overshoot V

SS

to –2.0 V for periods of up to 20 ns. See Figure 7.

Maximum DC voltage on input or I/O pins is V_CC+0.5 V.

During voltage transitions, input or I/O pins may

overshoot to V +2.0 V for periods up to 20 ns. See

Figure 8.

CC

20 ns

V

2. Minimum DC input voltage on pins A9, OE#, and RESET#

is -0.5 V. During voltage transitions, A9, OE#, and

CC

+2.0 V

V

RESET# may overshoot V to –2.0 V for periods of up

SS

CC

+0.5 V

to 20 ns. See Figure 7. Maximum DC input voltage on pin

A9 is +12.5 V which may overshoot to 14.0 V for periods

up to 20 ns.

2.0 V

20 ns

3. No more than one output may be shorted to ground at a

time. Duration of the short circuit should not be greater

than one second.

Figure 8. Maximum Positive

Overshoot Waveform

Stresses above those listed under “Absolute Maximum

Ratings” may cause permanent damage to the device. This

is a stress rating only; functional operation of the device at

these or any other conditions above those indicated in the

operational sections of this data sheet is not implied.

Exposure of the device to absolute maximum rating

conditions for extended periods may affect device reliability.

OPERATING RANGES

Commercial (C) Devices

Ambient Temperature (T ) . . . . . . . . . . . 0°C to +70°C

A

Industrial (I) Devices

Ambient Temperature (T ) . . . . . . . . . –40°C to +85°C

A

Extended (E) Devices

Ambient Temperature (T ) . . . . . . . . –55°C to +125°C

A

V

Supply Voltages

CC

V

for all devices . . . . . . . . . . . . . . . . .2.7 V to 3.6 V

CC

Operating ranges define those limits between which the

functionality of the device is guaranteed.

30

Am29LV160M

DC CHARACTERISTICS

CMOS Compatible

Parameter

Description

Test Conditions

= V to V

Min

Typ

Max

±1.0

35

Unit

µA

V

,

CC

IN

SS

I

Input Load Current

LI

= V

CC

CC max

I

A9 Input Load Current

Output Leakage Current

V

= V

; A9 = 12.5 V

µA

LIT

CC

CC max

V

= V to V

CC

,

OUT

SS

I

±1.0

µA

LO

= V

CC

CC max

5 MHz

1 MHz

5 MHz

1 MHz

15

2

30

10

30

10

CE# = V OE#

Byte Mode

V

IL,

=

IH,

V

Active Read Current

CC

I

mA

CC1

(Notes 1, 2)

15

2

CE# = V OE#

V

IL,

IH,

Word Mode

V

Active Write Current

CC

I

CE# = V OE# = V

IH

40

0.4

0.8

60

5

mA

µA

CC2

CC3

CC4

IL,

(Notes 2, 3, 5)

V

Standby Current (Notes 2, 4) CE#, RESET# = V ±0.3 V

CC

Standby Current During Reset

CC

RESET# = V ± 0.3 V

5

SS

(Notes 2, 4)

Automatic Sleep Mode

(Notes 2, 4, 6)

V

= V ± 0.3 V;

CC

IH

IL

I

0.4

5

µA

CC5

= V ± 0.3 V

SS

V

Input Low Voltage

Input High Voltage

–0.5

0.8

V

IL

V

0.7 x V

V

+ 0.3

IH

CC

Voltage for Autoselect and

Temporary Sector Unprotect

V

= 3.3 V

11.5

12.5

0.45

V

ID

CC

V

Output Low Voltage

I

= 4.0 mA, V = V

CC min

V

OL

OH

CC

V

= -2.0 mA, V = V

0.85 x V

CC

OH1

OH2

LKO

CC

CC min

Output High Voltage

= -100 µA, V = V

V

–0.4

CC

Low V Lock-Out Voltage (Note 4)

2.3

2.5

V

CC

Notes:

1. The I current listed is typically less than 2 mA/MHz, with OE# at V . Typical V is 3.0 V.

CC

IH

CC

2. Maximum I specifications are tested with V = V max.

CC

3. I active while Embedded Erase or Embedded Program is in progress.

CC

4. At extended temperature range (>+85°C), typical current is 5 µA and maximum current is 10 µA.

5. Automatic sleep mode enables the low power mode when addresses remain stable for t

current is 200 nA.

+ 30 ns. Typical sleep mode

ACC

6. Not 100% tested.

Am29LV160M

31

DC CHARACTERISTICS (Continued)

Zero Power Flash - TBD

32

Am29LV160M

TEST CONDITIONS

Table 11. Test Specifications

3.3 V

Test Condition

-70

-90, -120 Unit

Output Load

1 TTL gate

2.7 kΩ

Device

Under

Test

Output Load Capacitance, C

(including jig capacitance)

L

30

100

pF

C

L

Input Rise and Fall Times

Input Pulse Levels

5

0.0–3.0

ns

V

6.2 kΩ

Input timing measurement

reference levels

1.5

V

Output timing measurement

reference levels

Note: Diodes are IN3064 or equivalent

Figure 9. Test Setup

Key to Switching Waveforms

WAVEFORM

INPUTS

OUTPUTS

Steady

Changing from H to L

Changing from L to H

Don’t Care, Any Change Permitted

Changing, State Unknown

Does Not Apply

Center Line is High Impedance State (High Z)

3.0 V

0.0 V

1.5 V

Input

Measurement Level

Output

Figure 10. Input Waveforms and Measurement Levels

Am29LV160M

33

AC CHARACTERISTICS

Read Operations

Parameter

Speed Options

JEDEC

Std

Description

Test Setup

-70

-90

-120

Unit

t

Read Cycle Time (Note 1)

Min

70

90

120

ns

AVAV

RC

CE# = V

OE# = V

IL

t

Address to Output Delay

Max

90

ns

AVQV

ACC

t

Chip Enable to Output Delay

OE# = V

Max

Min

70

30

25

90

35

30

0

120

50

ns

ELQV

GLQV

EHQZ

GHQZ

CE

IL

t

Output Enable to Output Delay

OE

t

Chip Enable to Output High Z (Note 1)

Output Enable to Output High Z (Note 1)

30

DF

t

30

Read

Output Enable

t

OEH

Toggle and

Data# Polling

Hold Time (Note 1)

Min

10

0

ns

Output Hold Time From Addresses, CE# or

OE#, Whichever Occurs First (Note 1)

t

OH

AXQX

Notes:

1. Not 100% tested.

2. See Figure 9 and Table 11 for test specifications.

t_RC

Addresses Stable

t_ACC

Addresses

CE#

t_DF

t_OE

OE#

t_OEH

WE#

t_CE

t_OH

HIGH Z

Output Valid

Outputs

RESET#

RY/BY#

0 V

Figure 11. Read Operations Timings

34

Am29LV160M

AC CHARACTERISTICS

Hardware Reset (RESET#)

Parameter

JEDEC

Std

Description

Test Setup

All Speed Options

Unit

RESET# Pin Low (During Embedded Algorithms)

to Read or Write (See Note)

t

Max

20

µs

READY

RESET# Pin Low (NOT During Embedded

Algorithms) to Read or Write (See Note)

500

ns

READY

t

RESET# Pulse Width

Min

500

50

20

0

ns

µs

ns

RP

RESET# High Time Before Read (See Note)

RESET# Low to Standby Mode

RY/BY# Recovery Time

RH

t

RPD

t

RB

Note: Not 100% tested.

RY/BY#

CE#, OE#

RESET#

t_RH

t_RP

t_Ready

Reset Timings NOT during Embedded Algorithms

Reset Timings during Embedded Algorithms

t_Ready

RY/BY#

t_RB

CE#, OE#

RESET#

t_RP

Figure 12. RESET# Timings

Am29LV160M

35

AC CHARACTERISTICS

Word/Byte Configuration (BYTE#)

Parameter

Speed Options

JEDEC

Std

Description

-70

-90

5

-120

Unit

ns

t

CE# to BYTE# Switching Low or High

BYTE# Switching Low to Output HIGH Z

BYTE# Switching High to Output Active

Max

Min

ELFL/ ELFH

25

70

30

90

30

ns

FLQZ

120

ns

FHQV

CE#

OE#

BYTE#

t

ELFL

Data Output

(DQ0–DQ14)

Data Output

(DQ0–DQ7)

BYTE#

DQ0–DQ14

Switching

from word

to byte

Address

Input

DQ15

Output

mode

DQ15/A-1

t

FLQZ

t

ELFH

BYTE#

Switching

from byte

to word

Data Output

(DQ0–DQ7)

Data Output

(DQ0–DQ14)

DQ0–DQ14

mode

Address

Input

DQ15

Output

DQ15/A-1

t

FHQV

Figure 13. BYTE# Timings for Read Operations

CE#

The falling edge of the last WE# signal

WE#

BYTE#

t

SET

(t

)

AS

t

(t

)

HOLD AH

Note: Refer to the Erase/Program Operations table for t and t specifications.

AS

AH

Figure 14. BYTE# Timings for Write Operations

Am29LV160M

36

AC CHARACTERISTICS

Erase/Program Operations

Parameter

Speed Options

JEDEC

Std

Description

-70

-90

90

0

-120

Unit

ns

t

Write Cycle Time (Note 1)

Address Setup Time

Address Hold Time

Data Setup Time

Min

70

120

AVAV

WC

t

ns

AVWL

WLAX

AS

AH

DS

DH

t

45

35

45

0

50

ns

t

ns

DVWH

WHDX

t

Data Hold Time

ns

t

Output Enable Setup Time

0

ns

OES

Read Recovery Time Before Write

(OE# High to WE# Low)

t

Min

0

ns

GHWL

t

CE# Setup Time

Min

Typ

Min

0

ns

ELWL

WHEH

WLWH

WHWL

CS

CH

WP

CE# Hold Time

t

Write Pulse Width

Write Pulse Width High

35

30

5

50

t

WPH

Byte

t

Programming Operation (Note 2)

Sector Erase Operation (Note 2)

µs

WHWH1

WHWH2

WHWH1

Word

7

0.7

50

0

sec

µs

WHWH2

t

V

Setup Time (Note 1)

VCS

CC

t

Recovery Time from RY/BY#

ns

RB

t

Program/Erase Valid to RY/BY# Delay

90

ns

BUSY

Notes:

1. Not 100% tested.

2. See the “Erase and Programming Performance” section for more information.

Am29LV160M

37

AC CHARACTERISTICS

Program Command Sequence (last two cycles)

Read Status Data (last two cycles)

t_AS

t_WC

Addresses

555h

PA

t_AH

CE#

OE#

t_CH

t_WHWH1

t_WP

WE#

Data

t_WPH

t_CS

t_DS

t_DH

PD

D_OUT

A0h

Status

t_BUSY

t_RB

RY/BY#

V_CC

t_VCS

Notes:

1. PA = program address, PD = program data, D

is the true data at the program address.

OUT

2. Illustration shows device in word mode.

Figure 15. Program Operation Timings

38

Am29LV160M

AC CHARACTERISTICS

Erase Command Sequence (last two cycles)

Read Status Data

VA

t_AS

SA

t_WC

VA

Addresses

CE#

2AAh

555h for chip erase

t_AH

t_CH

OE#

t_WP

WE#

t_WPH

t_WHWH2

t_CS

t_DS

t_DH

In

Data

Complete

55h

30h

Progress

10 for Chip Erase

t_BUSY

t_RB

RY/BY#

V_CC

t_VCS

Notes:

1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”).

2. Illustration shows device in word mode.

Figure 16. Chip/Sector Erase Operation Timings

Am29LV160M

39

AC CHARACTERISTICS

t_RC

VA

Addresses

VA

t_ACC

t_CE

CE#

t_CH

t_OE

OE#

t_OEH

t_DF

t_OH

WE#

High Z

DQ7

Valid Data

Complement

True

DQ0–DQ6

Status Data

True

Valid Data

Status Data

t_BUSY

RY/BY#

Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data

read cycle.

Figure 17. Data# Polling Timings (During Embedded Algorithms)

t_RC

Addresses

VA

t_ACC

t_CE

VA

CE#

t_CH

t_OE

OE#

t_OEH

t_DF

t_OH

WE#

High Z

DQ6/DQ2

RY/BY#

Valid Status

(first read)

Valid Status

Valid Data

(second read)

(stops toggling)

t_BUSY

Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read

cycle, and array data read cycle.

Figure 18. Toggle Bit Timings (During Embedded Algorithms)

40

Am29LV160M

AC CHARACTERISTICS

Enter

Embedded

Erasing

Erase

Suspend

Enter Erase

Suspend Program

Erase

Resume

Erase

Erase Suspend

Read

Erase

Suspend

Program

Erase

Complete

WE#

Erase

Erase Suspend

Read

DQ6

DQ2

Note: The system may use CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an

erase-suspended sector.

Figure 19. DQ2 vs. DQ6 for Erase and

Erase Suspend Operations

Temporary Sector Unprotect

Parameter

JEDEC

Std

Description

Rise and Fall Time (See Note)

All Speed Options

Unit

t

V

Min

500

ns

VIDR

ID

RESET# Setup Time for Temporary Sector

Unprotect

t

4

µs

RSP

Note: Not 100% tested.

12 V

RESET#

0 or 3 V

t_VIDR

Program or Erase Command Sequence

CE#

WE#

t_RSP

RY/BY#

Figure 20. Temporary Sector Unprotect/Timing Diagram

Am29LV160M

41

AC CHARACTERISTICS

V

ID

V

IH

RESET#

SA, A6,

A1, A0

Valid*

Status

Sector Protect/Unprotect

Verify

40h

Data

60h

Sector Protect: 150 µs

Sector Unprotect: 15 ms

1 µs

CE#

WE#

OE#

Note: For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0.

Figure 21. Sector Protect/Unprotect Timing Diagram

42

Am29LV160M

AC CHARACTERISTICS

Alternate CE# Controlled Erase/Program Operations

Parameter

Speed Options

JEDEC

Std

Description

-70

-90

90

0

-120

Unit

ns

t

Write Cycle Time (Note 1)

Address Setup Time

Address Hold Time

Data Setup Time

Min

70

120

AVAV

AVEL

ELAX

WC

t

ns

AS

AH

DS

DH

t

45

35

45

0

50

ns

t

ns

DVEH

EHDX

t

Data Hold Time

ns

t

Output Enable Setup Time

0

ns

OES

Read Recovery Time Before Write

(OE# High to WE# Low)

t

Min

0

ns

GHEL

t

WE# Setup Time

WE# Hold Time

Min

Typ

0

ns

WLEL

WS

t

EHWH

WH

t

CE# Pulse Width

CE# Pulse Width High

35

30

5

50

ELEH

EHEL

CP

t

CPH

Byte

t

Programming Operation (Note 2)

Sector Erase Operation (Note 2)

µs

WHWH1

Word

7

0.7

sec

WHWH2

Notes:

1. Not 100% tested.

2. See the “Erase and Programming Performance” section for more information.

Am29LV160M

43

AC CHARACTERISTICS

555 for program

PA for program

2AA for erase

SA for sector erase

555 for chip erase

Data# Polling

Addresses

PA

t_WC

t_WH

t_AS

t_AH

WE#

OE#

t_GHEL

t_{WHWH1 or 2}

t_CP

CE#

Data

t_WS

t_CPH

t_DS

t_BUSY

t_DH

DQ7#

D_OUT

t_RH

A0 for program

55 for erase

PD for program

30 for sector erase

10 for chip erase

RESET#

RY/BY#

Notes:

1. PA = program address, PD = program data, DQ7# = complement of the data written to the device, D

device.

= data written to the

OUT

2. Figure indicates the last two bus cycles of the command sequence.

3. Word mode address used as an example.

Figure 22. Alternate CE# Controlled Write Operation Timings

44

Am29LV160M

ERASE AND PROGRAMMING PERFORMANCE

Parameter

Typ (Note 1)

0.4

Max (Note 2)

Unit

s

Comments

Sector Erase Time

Chip Erase Time

15

Excludes 00h programming

prior to erasure (Note 4)

25

s

Byte Programming Time

Word Programming Time

TBD

µs

s

TBD

Excludes system level

overhead (Note 5)

Byte Mode

Word Mode

TBD

Chip Programming Time

(Note 3)

TBD

s

Notes:

1. Typical program and erase times assume the following conditions: 25°C, 3.0 V V , 100,000 cycles. Additionally,

CC

programming typicals assume checkerboard pattern.

2. Under worst case conditions of 90°C, V = 2.7 V, 100,000 cycles.

CC

3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes

program faster than the maximum program times listed.

4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.

5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See

Table 9 for further information on command definitions.

6. The device has a minimum erase and program cycle endurance of 100,000 cycles.

LATCHUP CHARACTERISTICS

Description

Min

Max

Input voltage with respect to V on all pins except I/O pins

(including A9, OE#, and RESET#)

SS

–1.0 V

12.5 V

Input voltage with respect to V on all I/O pins

–1.0 V

V

+ 1.0 V

CC

SS

V

Current

–100 mA

+100 mA

CC

Includes all pins except V . Test conditions: V = 3.0 V, one pin at a time.

CC

TSOP AND SO PIN CAPACITANCE

Parameter

Symbol

Parameter Description

Input Capacitance

Test Setup

Typ

6

Max

7.5

12

Unit

pF

C

V

= 0

IN

C

Output Capacitance

Control Pin Capacitance

V

= 0

OUT

8.5

7.5

pF

OUT

C

V

= 0

IN

9

pF

IN2

Notes:

1. Sampled, not 100% tested.

2. Test conditions T = 25°C, f = 1.0 MHz.

A

DATA RETENTION

Parameter

Test Conditions

150°C

Min

10

Unit

Years

Minimum Pattern Data Retention Time

125°C

20

Am29LV160M

45

PHYSICAL DIMENSIONS*

TS 048—48-Pin Standard TSOP

Dwg rev AA; 10/99

* For reference only. BSC is an ANSI standard for Basic Space Centering.

46

Am29LV160M

PHYSICAL DIMENSIONS

TSR048—48-Pin Reverse TSOP

Dwg rev AA; 10/99

* For reference only. BSC is an ANSI standard for Basic Space Centering.

Am29LV160M

47

PHYSICAL DIMENSIONS

FBC048—48-Ball Fine-Pitch Ball Grid Array (FBGA)

8 x 9 mm

Dwg rev AF; 10/99

48

Am29LV160M

PHYSICAL DIMENSIONS

SO 044—44-Pin Small Outline Package

Dwg rev AC; 10/99

Am29LV160M

49

PHYSICAL DIMENSIONS

LAA064—64-Ball Fortified Ball Grid Array (FBGA) 13 x 11 mm Package

50

Am29LV160M

REVISION SUMMARY

Corrected power consumption currents.

Revision A (June 24, 2002)

Initial release.

Changed DC Characteristics Zero Power Flash tables

to TBD.

Revision A + 1 (July 3, 2002)

Changed minimum erase and program cycle endur-

ance to 100,000 cycles per sector.

Added LAA064 package.

Trademarks

AMD, the AMD logo, MirrorBit^TMand combinations thereof are registered trademarks of Advanced Micro Devices, Inc.

ExpressFlash is a trademark of Advanced Micro Devices, Inc.

Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.

Am29LV160M

51


型号：	AM29LV160MB-120WCF
厂家：	SPANSION
描述：	Flash, 1MX16, 120ns, PBGA48, 8 X 9 MM, 0.80 MM PITCH, FBGA-48
文件：	总51页 (文件大小：1319K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AM29LV160MB-120WCF [SPANSION]

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